JPH0183065U - - Google Patents
Info
- Publication number
- JPH0183065U JPH0183065U JP1987178812U JP17881287U JPH0183065U JP H0183065 U JPH0183065 U JP H0183065U JP 1987178812 U JP1987178812 U JP 1987178812U JP 17881287 U JP17881287 U JP 17881287U JP H0183065 U JPH0183065 U JP H0183065U
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- gas introduction
- plasma cvd
- gas
- exhaust port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 3
- 238000013459 approach Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の一実施例を示すプラズマＣＶ
Ｄ装置の断面図、第２図はそのガス導入板の正面
図、第３図はガス導入板の変形例を示す正面図、
第４図は従来例のワーク表面におけるガス流速、
ガス有効濃度及びＶｓ・Ｎ値を示す図、第５図は
本考案のワーク表面におけるガス流速、ガス有効
濃度及びＶｓ・Ｎ値を示す図、第６図及び第７図
は夫々従来例を示す要部断面図である。
図中、１はガス導入板、７はワーク、１３は排
気口、１５はガス導入孔である。
Figure 1 shows a plasma CV showing an embodiment of the present invention.
A sectional view of the device D, FIG. 2 is a front view of its gas introduction plate, and FIG. 3 is a front view showing a modification of the gas introduction plate.
Figure 4 shows the gas flow velocity on the workpiece surface in the conventional example.
Figure 5 is a diagram showing the gas effective concentration and Vs/N value, Figure 5 is a diagram showing the gas flow velocity, gas effective concentration, and Vs/N value on the workpiece surface of the present invention, Figures 6 and 7 are conventional examples, respectively. It is a sectional view of the main part. In the figure, 1 is a gas introduction plate, 7 is a workpiece, 13 is an exhaust port, and 15 is a gas introduction hole.
Claims (1)
れたワークに対向して膜形成用ガスを導入する多
数のガス導入孔を有するガス導入板を配置すると
共に、ワークの長手方向一側にワークに沿つてガ
ス流を形成するための排気口を形成してワークに
膜を形成するようにしたプラズマＣＶＤ装置にお
いて、上記ガス導入孔の面積を、排気口に近づく
に従つて小さく形成したことを特徴とするプラズ
マＣＶＤ装置。 (2) 上記ガス導入板が電極を兼用している実用
新案登録請求の範囲第１項記載のプラズマＣＶＤ
装置。[Claims for Utility Model Registration] (1) A gas introduction plate having a large number of gas introduction holes for introducing film-forming gas is arranged on the electrode side connected to a high-frequency power source, facing the grounded workpiece, and In a plasma CVD apparatus in which a film is formed on a workpiece by forming an exhaust port on one side in the longitudinal direction of the workpiece to form a gas flow along the workpiece, the area of the gas introduction hole is set to the exhaust port. A plasma CVD apparatus characterized in that it is formed smaller as it approaches. (2) The plasma CVD according to claim 1 of the utility model registration claim, in which the gas introduction plate also serves as an electrode.
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987178812U JPH0183065U (en) | 1987-11-26 | 1987-11-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987178812U JPH0183065U (en) | 1987-11-26 | 1987-11-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0183065U true JPH0183065U (en) | 1989-06-02 |
Family
ID=31470411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987178812U Pending JPH0183065U (en) | 1987-11-26 | 1987-11-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0183065U (en) |
-
1987
- 1987-11-26 JP JP1987178812U patent/JPH0183065U/ja active Pending
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