JPH0187212U - - Google Patents
Info
- Publication number
- JPH0187212U JPH0187212U JP1987183319U JP18331987U JPH0187212U JP H0187212 U JPH0187212 U JP H0187212U JP 1987183319 U JP1987183319 U JP 1987183319U JP 18331987 U JP18331987 U JP 18331987U JP H0187212 U JPH0187212 U JP H0187212U
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive element
- ferromagnetic material
- pattern
- material pattern
- ferromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003302 ferromagnetic material Substances 0.000 claims 2
- 230000005294 ferromagnetic effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
- 230000005381 magnetic domain Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Transmission And Conversion Of Sensor Element Output (AREA)
Description
第１図はこの考案の一実施例による磁気抵抗効
果素子を用いた回転情報検出器の構成図、第２図
は同実施例の磁気抵抗効果素子の磁区構造を示す
図で、第２図ａは磁界０の時の磁区構造を示す図
、第２図ｂは磁界がある時の磁区構造を示す図、
第３図は一般的な磁気抵抗効果素子の製造方法を
示す図、第４図は従来の磁気抵抗効果素子を用い
た回転情報検出器の構成図、第５図は同回転情報
検出器の等価回路図、第６図は従来の磁気抵抗効
果素子の磁区構造を示す図で、第６図ａは磁界が
０の時の磁区構造を示す図、第６図ｂは磁界があ
る時の磁区構造を示す図である。
３１〜３８……磁気抵抗効果素子、１９〜２１
……導体電極。
Fig. 1 is a block diagram of a rotational information detector using a magnetoresistive element according to an embodiment of the invention, and Fig. 2 is a diagram showing the magnetic domain structure of the magnetoresistive element of the same embodiment. is a diagram showing the magnetic domain structure when the magnetic field is 0, and Figure 2b is a diagram showing the magnetic domain structure when there is a magnetic field.
Figure 3 is a diagram showing a general method for manufacturing a magnetoresistive element, Figure 4 is a configuration diagram of a rotational information detector using a conventional magnetoresistive element, and Figure 5 is an equivalent version of the rotational information detector. The circuit diagram, FIG. 6, is a diagram showing the magnetic domain structure of a conventional magnetoresistive element. FIG. 6 a is a diagram showing the magnetic domain structure when the magnetic field is 0, and FIG. 6 b is a diagram showing the magnetic domain structure when the magnetic field is present. FIG. 31-38... Magnetoresistive element, 19-21
...Conductor electrode.
Claims (1)
前記強磁性体パターンの両端部に導電体層による
電極を積層してなる磁気抵抗効果素子において、
前記強磁性体パターンの端部を電極との接続部分
で斜めに屈曲させた事を特徴とする磁気抵抗効果
素子。 A strip-shaped ferromagnetic material pattern is arranged on the substrate,
In a magnetoresistive element in which electrodes made of conductive layers are laminated on both ends of the ferromagnetic pattern,
A magnetoresistive element characterized in that an end portion of the ferromagnetic material pattern is bent obliquely at a connection portion with an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987183319U JPH0187212U (en) | 1987-12-01 | 1987-12-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987183319U JPH0187212U (en) | 1987-12-01 | 1987-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0187212U true JPH0187212U (en) | 1989-06-08 |
Family
ID=31474742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987183319U Pending JPH0187212U (en) | 1987-12-01 | 1987-12-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0187212U (en) |
-
1987
- 1987-12-01 JP JP1987183319U patent/JPH0187212U/ja active Pending
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