JPH0189957U - - Google Patents

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Publication number
JPH0189957U
JPH0189957U JP18637087U JP18637087U JPH0189957U JP H0189957 U JPH0189957 U JP H0189957U JP 18637087 U JP18637087 U JP 18637087U JP 18637087 U JP18637087 U JP 18637087U JP H0189957 U JPH0189957 U JP H0189957U
Authority
JP
Japan
Prior art keywords
gas
distribution chamber
shower electrode
outlet holes
electrode plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18637087U
Other languages
Japanese (ja)
Other versions
JPH0543096Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987186370U priority Critical patent/JPH0543096Y2/ja
Publication of JPH0189957U publication Critical patent/JPH0189957U/ja
Application granted granted Critical
Publication of JPH0543096Y2 publication Critical patent/JPH0543096Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案に係るシヤワー電極の一実施例
の縦断面図、第２図乃至第４図は本実施例で使用
しているシヤワー電極板及び第１、第２の整流板
の各正面図、第５図は第１、第２の整流板を用い
ないときの基板の膜厚分布図、第６図は第１の整
流板を用いたときの基板の膜厚分布図、第７図は
第１、第２の整流板を用いたときの基板の膜厚分
布図、第８図は従来のプラズマＣＶＤ装置の縦断
面図である。 １……真空反応容器、２……基板ヒータ、３…
…基板、４……シヤワー電極、５……プラズマ電
源、６……ガス流出孔、７……シヤワー電極板、
８……ガス分配室、９……分配室形成体、１４，
１５……第１、第２の整流板。 FIG. 1 is a longitudinal sectional view of one embodiment of the shower electrode according to the present invention, and FIGS. 2 to 4 are front views of the shower electrode plate and the first and second rectifying plates used in this embodiment. Figure 5 is a film thickness distribution diagram of the substrate when the first and second rectifying plates are not used, Figure 6 is a film thickness distribution diagram of the substrate when the first rectifying plate is used, and Fig. 7 8 is a film thickness distribution diagram of a substrate when the first and second rectifying plates are used, and FIG. 8 is a longitudinal cross-sectional view of a conventional plasma CVD apparatus. 1... Vacuum reaction vessel, 2... Substrate heater, 3...
... Substrate, 4 ... Shower electrode, 5 ... Plasma power supply, 6 ... Gas outflow hole, 7 ... Shower electrode plate,
8... Gas distribution chamber, 9... Distribution chamber forming body, 14,
15...First and second rectifier plates.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 多数のガス流出孔を分散して設けたシヤワー電
極板と、前記シヤワー電極板の裏側にガス分配室
を形成して該ガス分配室に供給されるガスを前記
各ガス流出孔に分配する分配室形成体とを備えた
プラズマＣＶＤ装置用シヤワー電極において、前
記ガス分配室内に前記各ガス流出孔から流出させ
る前記ガスの流出流量を調整するための整流板が
配置されていることを特徴とするプラズマＣＶＤ
装置用シヤワー電極。 A shower electrode plate having a large number of distributed gas outlet holes, and a distribution chamber forming a gas distribution chamber on the back side of the shower electrode plate and distributing gas supplied to the gas distribution chamber to each of the gas outlet holes. A shower electrode for a plasma CVD apparatus comprising a forming body, characterized in that a rectifying plate for adjusting an outflow flow rate of the gas flowing out from each of the gas outflow holes is disposed in the gas distribution chamber. CVD
Shower electrode for equipment.
JP1987186370U 1987-12-09 1987-12-09 Expired - Lifetime JPH0543096Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987186370U JPH0543096Y2 (en) 1987-12-09 1987-12-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987186370U JPH0543096Y2 (en) 1987-12-09 1987-12-09

Publications (2)

Publication Number Publication Date
JPH0189957U true JPH0189957U (en) 1989-06-13
JPH0543096Y2 JPH0543096Y2 (en) 1993-10-29

Family

ID=31477600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987186370U Expired - Lifetime JPH0543096Y2 (en) 1987-12-09 1987-12-09

Country Status (1)

Country Link
JP (1) JPH0543096Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025108733A (en) * 2010-11-30 2025-07-23 株式会社Kokusai Electric SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6137969A (en) * 1984-07-31 1986-02-22 Canon Inc Plasma cvd device for manufacturing thin film
JPS6187319A (en) * 1984-10-05 1986-05-02 Hitachi Ltd Chemical vapor deposition equipment using plasma
JPS6187872A (en) * 1984-10-05 1986-05-06 Hitachi Ltd Anode electrode of parallel plate plasma CVD equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6137969A (en) * 1984-07-31 1986-02-22 Canon Inc Plasma cvd device for manufacturing thin film
JPS6187319A (en) * 1984-10-05 1986-05-02 Hitachi Ltd Chemical vapor deposition equipment using plasma
JPS6187872A (en) * 1984-10-05 1986-05-06 Hitachi Ltd Anode electrode of parallel plate plasma CVD equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025108733A (en) * 2010-11-30 2025-07-23 株式会社Kokusai Electric SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Also Published As

Publication number Publication date
JPH0543096Y2 (en) 1993-10-29

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