JPH0197315A - Formation of tin oxide conductive film - Google Patents
Formation of tin oxide conductive filmInfo
- Publication number
- JPH0197315A JPH0197315A JP25439387A JP25439387A JPH0197315A JP H0197315 A JPH0197315 A JP H0197315A JP 25439387 A JP25439387 A JP 25439387A JP 25439387 A JP25439387 A JP 25439387A JP H0197315 A JPH0197315 A JP H0197315A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sputtering
- tin oxide
- substrate
- argon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title claims description 26
- 229910001887 tin oxide Inorganic materials 0.000 title claims description 24
- 230000015572 biosynthetic process Effects 0.000 title abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052786 argon Inorganic materials 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000001301 oxygen Substances 0.000 claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229960003903 oxygen Drugs 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Lining Or Joining Of Plastics Or The Like (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、マグネトロンスパッタリングによシ基板の表
面に所望の比抵抗を有する酸化錫導電膜を形成する酸化
錫導電膜の形成方法に関する。Detailed Description of the Invention [Objective of the Invention] (Industrial Field of Application) The present invention provides a process for forming a tin oxide conductive film having a desired resistivity on the surface of a substrate by magnetron sputtering. Regarding the forming method.
（従来の技術）
従来、酸化錫は酸化インジ具つムとともに代表的な透明
導電材料であシ、その導電性と可視光線に対する透光性
を利用して、液晶等の表示装置の透明電極として使用さ
れている。基板の表面に酸化錫を主成分とする透明導電
膜を形成する酸化錫導電膜の形成方法は、周知のスプレ
ー法、ＣＶＤ法、真空蒸着法およびスパッタリング法が
それぞれ適用される。しかるに上記の各成膜法には次の
ような問題がある。(Prior art) Tin oxide has traditionally been a typical transparent conductive material along with indium oxide, and has been used as a transparent electrode for display devices such as liquid crystals by utilizing its conductivity and transparency to visible light. It is used. The well-known spray method, CVD method, vacuum evaporation method, and sputtering method are applied to the formation method of the tin oxide conductive film to form a transparent conductive film containing tin oxide as a main component on the surface of the substrate. However, each of the above film forming methods has the following problems.
■ スプレー法またはＣＶＤ法による成膜法は、加熱さ
れた基板の表面における化学反応の副産物として、塩素
・塩化水素または有機化合物による環境汚染の問題があ
シ、さらにこれらが酸化錫膜の内部へ入シ込み膜質欠陥
が発生する。■ Film forming methods using the spray method or CVD method have the problem of environmental contamination due to chlorine, hydrogen chloride, or organic compounds as byproducts of chemical reactions on the surface of the heated substrate, and furthermore, these may enter the inside of the tin oxide film. Infiltration film quality defects occur.
■ 真空蒸着法による成膜法は、酸化第一錫膜を形成し
た後、加熱酸化処理して酸化第二錫膜を生成する過程が
あシ、この加熱酸化処理によって膜の比抵抗が左右され
、かつ工程が複雑化し生産性に影響する。■ The vacuum evaporation method involves the process of forming a stannous oxide film and then subjecting it to heat oxidation treatment to produce a stannic oxide film.This heat oxidation treatment affects the specific resistance of the film. , and the process becomes complicated, which affects productivity.
■ 一般的なスパッタリング法、たとえば直流スパッタ
リングまたは高周波スパッタリングによる成膜法は、他
の成膜法に比べてすぐれた特長を有しているが、基板へ
の膜の付着速度が遅いので、生産性の面で問題がある。■ General sputtering methods, such as DC sputtering or high-frequency sputtering, have superior features compared to other film-forming methods, but the deposition speed of the film on the substrate is slow, resulting in reduced productivity. There is a problem with this.
（発明が解決しようとする問題点）
上記のように従来の酸化錫導電膜の形成方法は化学反応
から派生する環境汚染、導電膜の比抵抗の不安定、工程
の複雑化、膜の付着速腿の遅れなど改善すべき問題があ
る。(Problems to be Solved by the Invention) As mentioned above, the conventional method for forming a tin oxide conductive film causes environmental pollution resulting from chemical reactions, instability of the resistivity of the conductive film, complication of the process, and the deposition speed of the film. There are issues that need to be improved, such as leg lag.
本発明は上記事情を考慮してなされたもので、膜の付着
速度が速く、成膜後の加熱酸化処理を要せず、膜質欠陥
がなく、かつ膜の比抵抗の制御が可能な酸化錫導電膜の
形成方法を提供することを目的とする。The present invention has been made in consideration of the above circumstances, and uses tin oxide that has a fast film deposition rate, does not require thermal oxidation treatment after film formation, has no film quality defects, and can control the specific resistance of the film. An object of the present invention is to provide a method for forming a conductive film.
（問題点を解決するための手段）
本発明者は上記の目的を達成するために種々実験研究し
た結果、酸化錫導電膜の形成にマグネトロンスパッタリ
ングを採用し、アルゴンと酸素とを混合してスパッタガ
スとして用い、このスパッタガス混合比とスパッタガス
圧力とを調節することにより、酸化錫膜の比抵抗を制御
し得ることを見出した。すなわち本発明は、マグネトロ
ンスパッタリングによｐ基板の表面に酸化錫を主成分と
する透明導電膜を形成する酸化錫導電膜の形成方法にお
いて、前記基板の温度を２０〜２００℃に設定し、スパ
ッタガスを混成するアルゴンと酸素との混合比およびス
パッタガス圧を調節して、所望の比抵抗を有する膜を形
成する酸化錫導電膜の形成方法である。(Means for Solving the Problems) As a result of various experimental studies to achieve the above object, the inventor adopted magnetron sputtering to form a tin oxide conductive film, and sputtered by mixing argon and oxygen. It has been found that the resistivity of the tin oxide film can be controlled by adjusting the sputtering gas mixture ratio and sputtering gas pressure. That is, the present invention provides a method for forming a transparent conductive film containing tin oxide as a main component on the surface of a p-substrate by magnetron sputtering, in which the temperature of the substrate is set at 20 to 200°C, and sputtering is performed. This is a method for forming a tin oxide conductive film in which a film having a desired specific resistance is formed by adjusting the mixing ratio of argon and oxygen as gases and the sputtering gas pressure.
（作 用）
マグネトロンスパッタリングは直交電磁界放電の利用と
その電極構造によって、非常に効率よく高密度プラズマ
が得られ、直流スパッタリングおよび高周波スパッタリ
ングに比べて、すぐれた放電特性を有しておシ、基板へ
の酸化錫膜の付着速度が速いので生産性の面でも有利で
ある。また基板の温度２０〜２００℃の範囲において、
スパッタガスのアルゴンと酸素との任意の混合比に対し
膜の比抵抗がスパッタガス圧に比例して変化するので、
アルゴンと酸素とのスパッタガス混合比とスパッタガス
圧とを適当に＃ｉ節することによシ、所望の比抵抗を有
する酸化錫膜を形成することができる。さらにこの酸化
錫導電膜の形成方法においては、スパッタガスに酸素が
導入されているので、成膜後に基板を加熱酸化処理する
必要がない。(Function) Magnetron sputtering uses orthogonal electromagnetic field discharge and its electrode structure to obtain high-density plasma very efficiently, and has superior discharge characteristics compared to direct current sputtering and high frequency sputtering. Since the rate of attachment of the tin oxide film to the substrate is fast, it is also advantageous in terms of productivity. In addition, in the range of the substrate temperature of 20 to 200°C,
For any mixing ratio of argon and oxygen in the sputtering gas, the specific resistance of the film changes in proportion to the sputtering gas pressure.
By appropriately adjusting the sputtering gas mixture ratio of argon and oxygen and the sputtering gas pressure, a tin oxide film having a desired resistivity can be formed. Furthermore, in this method of forming a tin oxide conductive film, since oxygen is introduced into the sputtering gas, there is no need to heat and oxidize the substrate after film formation.
（実施例） 本発明の実施例について図面を参照して説明する。(Example) Embodiments of the present invention will be described with reference to the drawings.
第１図は高周波マグネトロンスパッタリング装置の構造
を示す断面説明図である。筐体（１）内に配置された電
極（２）にターゲット（３）が固着され、電極（２）に
対向して配設された基板ホルダ（４）に基板Ｔ５１が保
持されている。アルゴンと酸素はガス混合器（６）によ
シ所定の比率に混合され、スパッタガスとして筐体（１
）内へ供給される。電極（２）は高周波電源（７）に接
続されている。（８）は基板（５）を所定の温度に加熱
するヒータ、（９）はシャッタである。FIG. 1 is an explanatory cross-sectional view showing the structure of a high frequency magnetron sputtering device. A target (3) is fixed to an electrode (2) arranged in a housing (1), and a substrate T51 is held by a substrate holder (4) arranged opposite to the electrode (2). Argon and oxygen are mixed in a predetermined ratio by a gas mixer (6), and are sent to the housing (1) as a sputtering gas.
). The electrode (2) is connected to a high frequency power source (7). (8) is a heater that heats the substrate (5) to a predetermined temperature, and (9) is a shutter.
上記の高周波マグネトロンスパッタリング装置において
、次のスパッタリング条件によシ基板の表面に酸化錫を
主成分とする透明導電膜を形成する。In the above-mentioned high frequency magnetron sputtering apparatus, a transparent conductive film containing tin oxide as a main component is formed on the surface of the substrate under the following sputtering conditions.
■ターゲット
Ｓｎｏｗ （９９，９９％） ： ８ｆ１０２ｅ末’ｋ
ｊＭ熟ＬｍＦＥ成形した直径７６１１＃ＩＯもの。■Target Snow (99,99%): 8f102e end'k
jM Mature LmFE molded diameter 7611#IO.
■基 板
コーニング社製す７０５９ガラス（無アルカリガラス）
■基板−ターゲット間隔 ８５ｓ＋ｉ■基板温度
２００℃
■スパッタガス
アルゴン ＋００． ９５． ９０． ８０％酸
素 ０． ５． １０． ２０％■ス
パッタガス圧力
１．３３３２２Ｘ １０” 〜１．３３３２２Ｘ １０
ＰＩ （ＩＸ １０”’ 〜ＩＸ １０−” Ｔｏｒ
ｒ ）
■高周波出力 １４５Ｗ
ｏｓｙａ ｗＬ９５〜＋０２ｎｔｎ（９５０〜１０２
０Ｘ）基板は前処理として十分な洗浄・乾燥を行ない高
周波マグネトロンスパッタリング装置内でアルゴンエツ
チングを施したものを使用し、ターゲットは表面の汚れ
を除去するためにプレスパッタリングを実施した後に使
用した。■Substrate Corning 7059 glass (alkali-free glass) ■Substrate-target distance 85s+i ■Substrate temperature
200℃ ■Sputter gas argon +00. 95. 90. 80% acid
Basic 0. 5. 10. 20% ■ Sputtering gas pressure 1.33322X 10" ~ 1.33322X 10
PI (IX 10"' ~IX 10-" Tor
r) ■High frequency output 145W osya wL95~+02ntn (950~102
0X) The substrate used was one that had been thoroughly cleaned and dried as a pretreatment and argon etched in a high-frequency magnetron sputtering device, and the target was used after performing pre-sputtering to remove surface dirt.
第２図は前記酸化錫膜のスパッタリングにおいて、膜の
付着速度のスパッタガス圧力依存性を示す特性図でおる
。スパッタガスがアルゴン１００％の場合、曲Ｗ （ａ
）に示すように、スパッタガス圧力１．２ Ｐａ （９
Ｘ ＩＱ−３Ｔｏｒｒ ） テ膜の付［ＭＷｉｌ大トナ
シトナシよりスパッタガス圧力が低圧側または高圧側で
は膜の付着速度が低下する。同様にスパッタガスがアル
ゴン＋酸素（５％）のときは曲線（ｂ）、アルゴン＋酸
素（１０％）のときは曲、ＩＩ （Ｃ）アルゴン＋酸素
（２０％）のときは曲Ｍ （ｄ）に示すように、それぞ
れスパッタガス圧力０．９３３ Ｐａ（７Ｘ １Ｏ−３
Ｔｏｒｒ）で膜の付着速度は般大となる。FIG. 2 is a characteristic diagram showing the dependence of the film deposition rate on the sputtering gas pressure in the sputtering of the tin oxide film. When the sputtering gas is 100% argon, the song W (a
), the sputtering gas pressure was 1.2 Pa (9
X IQ-3Torr) Film Attachment [MWil] When the sputtering gas pressure is on the lower or higher pressure side, the film deposition rate decreases. Similarly, when the sputtering gas is argon + oxygen (5%), curve (b), when argon + oxygen (10%), curve II (C), when argon + oxygen (20%), curve M (d ), the sputtering gas pressure was 0.933 Pa (7X 1O-3
Torr), the film deposition rate is generally high.
また別のスパッタリング装置を使用し、高周波スパッタ
リングにより、高周波出力＋４５Ｗ、基板ｍ＆２００℃
、スパッタガスアルゴン１００％なる条件で膜を形成し
た場合の膜の付着速度を曲線（ｅ）に示す。この特性図
からマグネトロンスパッタリングは一般的なスパッタリ
ングに比べ、膜の付着速度が速いことが認められる。In addition, using another sputtering device, high frequency output +45W, substrate m & 200 ° C by high frequency sputtering.
Curve (e) shows the deposition rate of the film when the film was formed under the conditions where the sputtering gas was 100% argon. This characteristic diagram shows that magnetron sputtering has a faster film deposition rate than general sputtering.
第３図は前記酸化錫膜のスパッタリングにおいて、膜の
比抵抗のスパッタガス圧力依存性を示す特性図である。FIG. 3 is a characteristic diagram showing the sputtering gas pressure dependence of the specific resistance of the film in the sputtering of the tin oxide film.
スパッタガスがアルゴン１００％の場合、曲線（ｆ）に
示すように、膜の比抵抗はスパッタガス圧力に依存せず
、真空蒸着と同様に膜は導電性を示さない。これは酸化
第一錫が付着しているものと思考され、加熱酸化処理を
行なうことで導電性が得られる。スパッタガスが、アル
ゴン十酸素（５％）のときは曲線（ｇ）、アルゴン＋酸
素（１０％）のときは曲線（ｈ）、アルゴン＋酸素（２
０％）のときは曲Ｎ（ｊ）に示すように、スパッタガス
に酸素を導入することによシ、加熱酸化処理を行なうこ
となく酸化錫膜１！膜が形成される。またスパッタガス
のアルゴンと酸素との任意の混合比に対し、スパッタガ
ス圧力０．２６７〜０．１３．３３Ｐ１ （２Ｘ Ｉ
Ｏ−３〜Ｉ Ｘ Ｉ Ｑ−” Ｔｏｒｒ ）の範凹内ニ
オイテ、比抵抗は直線的に推移することが認められる。When the sputtering gas is 100% argon, the specific resistance of the film does not depend on the sputtering gas pressure, as shown in curve (f), and the film does not exhibit electrical conductivity, similar to vacuum evaporation. This is thought to be due to the adhesion of stannous oxide, and conductivity can be obtained by performing a heating oxidation treatment. When the sputtering gas is argon and 10 oxygen (5%), curve (g), when argon + oxygen (10%), curve (h), and argon + oxygen (2
0%), as shown in curve N(j), by introducing oxygen into the sputtering gas, a tin oxide film 1! can be formed without thermal oxidation treatment. A film is formed. In addition, for any mixing ratio of argon and oxygen in the sputtering gas, the sputtering gas pressure is 0.267 to 0.13.33P1 (2X I
It is recognized that the specific resistance within the range of O-3 to IXIQ-'' Torr changes linearly.
第４図は前記スパッタリング条件において、アルゴン＋
酸素（１０％）なるスパッタガスを使用し、高周波出力
を２５０Ｗ、１４５Ｗ、８０Ｗに設定した場合の膜の付
着速度のスパッタガス圧力依存性を示す特性図であり、
第５図は膜の比抵抗のスパッタガス圧力依存性を示す特
性図である。Figure 4 shows that under the above sputtering conditions, argon +
It is a characteristic diagram showing the sputtering gas pressure dependence of the film deposition rate when a sputtering gas of oxygen (10%) is used and the high frequency output is set to 250 W, 145 W, and 80 W.
FIG. 5 is a characteristic diagram showing the dependence of the specific resistance of the film on the sputtering gas pressure.
高周波出力が２５０Ｗのときは曲線（ｋ）（ｐ）、１４
５Ｗのときは曲線（ｍ）（ｑ）、８０Ｗのときは曲Ｍ
（ｆｌ）（ｒ）に示すように、高周波出力は大なるほど
膜の付着速度が速くなるが、膜の比抵抗には影響を与え
ない。When the high frequency output is 250W, curve (k) (p), 14
Curve (m) (q) for 5W, curve M for 80W
As shown in (fl) and (r), as the high-frequency output increases, the deposition speed of the film increases, but it does not affect the specific resistance of the film.
第６図は前記スパッタリング条件において、基板温度２
０℃（室温）〜３００℃、スパッタガス圧力を０．９３
３Ｐａ （７Ｘ １０’ Ｔｏｒｒ ）に設定した場合
の膜の比抵抗の基板温度依存性を示す特性図である。ス
パッタガスがアルゴン＋酸素（５％）のときは曲線（８
）、アルゴン＋酸素（１０％）のときは曲線（１）、ア
ルゴン＋酸素（２０％）のときは曲線（ｕ）に示すよう
に、基板温度２０〜２５０℃の範囲において、膜の比抵
抗はほぼ一定の値であシ、高温側で僅かに減少する。こ
れは酸化錫の酸化の度合が高温はど促進されるためであ
る。Figure 6 shows the substrate temperature 2 under the above sputtering conditions.
0°C (room temperature) to 300°C, sputtering gas pressure 0.93
FIG. 3 is a characteristic diagram showing the substrate temperature dependence of the specific resistance of the film when set to 3 Pa (7×10' Torr). When the sputtering gas is argon + oxygen (5%), the curve (8
), as shown in curve (1) for argon + oxygen (10%) and curve (u) for argon + oxygen (20%), the specific resistance of the film is is a nearly constant value, and decreases slightly on the high temperature side. This is because the degree of oxidation of tin oxide is accelerated at high temperatures.
以上のように本発明は、マグネトロンスパッタリングに
よシ基板の表面に酸化錫導電膜を形成する方法において
、スパッタガスのアルゴンと酸素の混合比およびスパッ
タガス圧力を調節して、所望の比抵抗を有する膜を形成
する酸化錫導電膜の形成方法であシ、従来の方法では不
安定であった導電膜の比抵抗について、所望の比抵抗を
有するものを容易に得ることができる。また基板への膜
の付着速度が速く、かつスパッタガスへの酸素の導入に
よシ成膜後の加熱酸化処理を必要としないので、生産性
の面でもすぐれた利点がある。As described above, the present invention provides a method for forming a tin oxide conductive film on the surface of a substrate by magnetron sputtering, by adjusting the mixing ratio of argon and oxygen in the sputtering gas and the sputtering gas pressure to obtain a desired resistivity. This is a method for forming a tin oxide conductive film to form a film having a conductive film having a desired resistivity, which is unstable in conventional methods. In addition, the deposition rate of the film on the substrate is fast, and the introduction of oxygen into the sputtering gas eliminates the need for heating and oxidation treatment after film formation, which is advantageous in terms of productivity.
第１図は本発明に係る高周波マグネトロンスパッタリン
グ装置の構造を示す断面説明図、第２図は本発明によシ
形成された膜の付着速度のスパッタガス圧力依存性を示
す特性図、第３図はその膜の比抵抗のスパッタガス圧力
依存性を示す特性図、第４図は本発明において高周波出
力を変化した場合の膜の付着速度のスパッタガス圧力依
存性を示す特性図、第５図はその膜の比抵抗のスパッタ
ガス圧力依存性を示す特性図、第６図は本発明により形
成された膜の比抵抗の基板温度依存性を示す特性図であ
る。
２・・・・・・電極 ３・・・・・・ターゲット４・
・・・・・基板ホルダ ５・・・・・・基板６・・・
・・・ガス混合器FIG. 1 is a cross-sectional explanatory diagram showing the structure of a high-frequency magnetron sputtering apparatus according to the present invention, FIG. 2 is a characteristic diagram showing the sputtering gas pressure dependence of the deposition rate of a film formed according to the present invention, and FIG. is a characteristic diagram showing the sputtering gas pressure dependence of the specific resistance of the film, FIG. 4 is a characteristic diagram showing the sputtering gas pressure dependence of the film deposition rate when changing the high frequency output in the present invention, and FIG. FIG. 6 is a characteristic diagram showing the dependence of the specific resistance of the film on the sputtering gas pressure, and FIG. 6 is a characteristic diagram showing the dependence of the specific resistance of the film formed according to the present invention on the substrate temperature. 2... Electrode 3... Target 4.
... Board holder 5 ... Board 6 ...
...gas mixer
Claims (1)
を主成分とする透明導電膜を形成する酸化錫導電膜の形
成方法において、前記基板の温度を２０〜２５０℃に設
定し、アルゴンと酸素とからなるスパッタガスの両者の
混合比およびスパッタガス圧力を調節して、所望の比抵
抗を有する膜を形成する酸化錫導電膜の形成方法。In a method for forming a transparent conductive film containing tin oxide as a main component on the surface of a substrate by magnetron sputtering, the temperature of the substrate is set at 20 to 250°C, and a sputtering gas consisting of argon and oxygen is used. A method for forming a tin oxide conductive film in which a film having a desired resistivity is formed by adjusting the mixing ratio of both and the sputtering gas pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25439387A JPH0197315A (en) | 1987-10-08 | 1987-10-08 | Formation of tin oxide conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25439387A JPH0197315A (en) | 1987-10-08 | 1987-10-08 | Formation of tin oxide conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0197315A true JPH0197315A (en) | 1989-04-14 |
Family
ID=17264354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25439387A Pending JPH0197315A (en) | 1987-10-08 | 1987-10-08 | Formation of tin oxide conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0197315A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2447999A1 (en) * | 2010-10-29 | 2012-05-02 | Applied Materials, Inc. | Method for depositing a thin film electrode and thin film stack |
| CN102623570A (en) * | 2012-04-12 | 2012-08-01 | 成都中光电阿波罗太阳能有限公司 | Method for producing high-resistance layer of cadmium telluride film solar battery |
-
1987
- 1987-10-08 JP JP25439387A patent/JPH0197315A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2447999A1 (en) * | 2010-10-29 | 2012-05-02 | Applied Materials, Inc. | Method for depositing a thin film electrode and thin film stack |
| CN102623570A (en) * | 2012-04-12 | 2012-08-01 | 成都中光电阿波罗太阳能有限公司 | Method for producing high-resistance layer of cadmium telluride film solar battery |
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