JPH0199035U - - Google Patents
Info
- Publication number
- JPH0199035U JPH0199035U JP19496087U JP19496087U JPH0199035U JP H0199035 U JPH0199035 U JP H0199035U JP 19496087 U JP19496087 U JP 19496087U JP 19496087 U JP19496087 U JP 19496087U JP H0199035 U JPH0199035 U JP H0199035U
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- substrate
- external electrode
- conductor film
- sensor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の構成説明図、第２
図は本考案の他の実施例の構成説明図、第３図は
従来より一般に使用されている従来例の構成説明
図である。
１……センサチツプ、１１……感圧部、１１１
……薄肉起歪部、１１２……ゲージ、６……基板
、６１……導体膜、６２……ワイヤ、７……アン
プチツプ、８……外部電極、９……圧力容器。
Figure 1 is an explanatory diagram of the configuration of one embodiment of the present invention;
The figure is an explanatory diagram of the configuration of another embodiment of the present invention, and FIG. 3 is an explanatory diagram of the configuration of a conventional example that has been commonly used. 1...Sensor chip, 11...Pressure sensing part, 111
. . . Thin strain generating part, 112 . . . Gauge, 6 . . . Substrate, 61 . . . Conductor film, 62 .
Claims (1)
該薄肉起歪部の表面近くに熱拡散あるいはイオン
注入により作成されたゲージとよりなる感圧部を
備える半導体からなるセンサチツプと、該センサ
チツプが取付けられる基板と、該基板に設けられ
た導体膜と、該導体膜と前記センサチツプとを電
気的に導通するワイヤと、前記導体膜に一端が固
定された外部電極と、前記センサチツプと基板と
を囲んで設けられ該外部電極の途中が固定され測
定圧が導入される圧力容器とを具備してなる半導
体圧力センサ。 A sensor chip made of a semiconductor, comprising a thin strain-generating part that generates stress in response to measurement pressure, and a pressure-sensitive part made of a gauge made by thermal diffusion or ion implantation near the surface of the thin-walled strain-generating part; A substrate to be attached, a conductor film provided on the substrate, a wire that electrically connects the conductor film and the sensor chip, an external electrode having one end fixed to the conductor film, and the sensor chip and the substrate. A semiconductor pressure sensor comprising: a pressure vessel surrounding the external electrode, to which the external electrode is fixed in the middle, and into which measurement pressure is introduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19496087U JPH0199035U (en) | 1987-12-23 | 1987-12-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19496087U JPH0199035U (en) | 1987-12-23 | 1987-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0199035U true JPH0199035U (en) | 1989-07-03 |
Family
ID=31485659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19496087U Pending JPH0199035U (en) | 1987-12-23 | 1987-12-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0199035U (en) |
-
1987
- 1987-12-23 JP JP19496087U patent/JPH0199035U/ja active Pending
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