JPH02102471U - - Google Patents
Info
- Publication number
- JPH02102471U JPH02102471U JP950889U JP950889U JPH02102471U JP H02102471 U JPH02102471 U JP H02102471U JP 950889 U JP950889 U JP 950889U JP 950889 U JP950889 U JP 950889U JP H02102471 U JPH02102471 U JP H02102471U
- Authority
- JP
- Japan
- Prior art keywords
- heater
- crystal growth
- quartz ampoule
- semiconductor crystal
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003708 ampul Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の半導体結晶成長用ヒータの一
実施例を示す断面図、第２図は第１図に示すヒー
タの温度分布図、第３図は従来の半導体結晶成長
用ヒータの断面図、第４図は第３図に示すヒータ
温度分布図である。
３：耐火物、５：主ヒータ、６，７：補助ヒー
タ、８：石英アンプル、９：石英ボート、１０，
１１，１２：電源端子。
Fig. 1 is a cross-sectional view showing an embodiment of the heater for semiconductor crystal growth of the present invention, Fig. 2 is a temperature distribution diagram of the heater shown in Fig. 1, and Fig. 3 is a cross-sectional view of a conventional heater for semiconductor crystal growth. , FIG. 4 is a temperature distribution diagram of the heater shown in FIG. 3. 3: Refractory, 5: Main heater, 6, 7: Auxiliary heater, 8: Quartz ampoule, 9: Quartz boat, 10,
11, 12: Power terminal.
Claims (1)
ルの内部に設置された石英ボート内の半導体原料
を加熱させながら単結晶を育成するための半導体
結晶成長用ヒータにおいて、前記ヒータが、同一
素線で巻線され長さ方向に対して直径が等しく巻
ピツチのみ長手方向に変化させたヒータコイルと
、該ヒータコイルに通電して加熱する一系統の電
源とよりなることを特徴とする半導体結晶成長用
ヒータ。 In a semiconductor crystal growth heater for growing a single crystal while heating a semiconductor raw material in a quartz boat which is provided with the outer periphery of a quartz ampoule and installed inside the quartz ampoule, the heater is wound with the same wire. A heater for semiconductor crystal growth characterized by comprising a heater coil which is made of wire and has an equal diameter in the length direction and only the winding pitch is varied in the longitudinal direction, and a power supply system that supplies electricity to the heater coil to heat it. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP950889U JPH02102471U (en) | 1989-01-30 | 1989-01-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP950889U JPH02102471U (en) | 1989-01-30 | 1989-01-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02102471U true JPH02102471U (en) | 1990-08-15 |
Family
ID=31216308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP950889U Pending JPH02102471U (en) | 1989-01-30 | 1989-01-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02102471U (en) |
-
1989
- 1989-01-30 JP JP950889U patent/JPH02102471U/ja active Pending