JPH0210568B2 - - Google Patents
Info
- Publication number
- JPH0210568B2 JPH0210568B2 JP58225601A JP22560183A JPH0210568B2 JP H0210568 B2 JPH0210568 B2 JP H0210568B2 JP 58225601 A JP58225601 A JP 58225601A JP 22560183 A JP22560183 A JP 22560183A JP H0210568 B2 JPH0210568 B2 JP H0210568B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- substrate
- inp
- compound semiconductor
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2909—Phosphides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3418—Phosphides
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
(イ) 発明の技術分野
本発明は、スライデイング法による液相エピタ
キシヤル成長法に関し、特にInP−InGaAsP液相
成長等において有効な熱ダメージ防止用保護板の
改善に関する。
(ロ) 従来技術と問題点
従来、InP−InGaAsP系の液相エピタキシヤル
成長をスライデイング法で実施する場合、スライ
デイング用ボートに成長基板と溶液をチヤージし
昇温する過程で成長基板を保護板で覆い熱ダメー
ジから保護しているが、従来の保護板は平坦であ
り次のような欠点がある。
くり返し、使用すると保護板表面にInの粒が
折出し、その粒が成長用基板に接触し、かえつ
て傷をつけてしまう。
Inの粒を除くために毎回エツチングをしてか
ら使うと５回目位から保護板の周囲がダレてく
る。その結果保護板中央部が成長用基板に接触
し、傷をつけてしまう。
(ハ) 発明の目的
本発明の目的は、以上の点に鑑み、スライデイ
ング法による液相エピタキシヤル成長において、
成長前の昇温時に成長用基板上に被せる保護板形
態を改良して、くり返し使用しても成長基板に傷
をつけることがないようにすることを目的とす
る。
(ニ) 発明の構成
本発明は、InP保護板による成長用InP基板表
面の熱ダメージ防止効果はInP保護板と成長用
InP基板表面との隙間が50μm程度でも得られる
のでInP保護板に凹部を設ければ成長用基板表面
との接触を防いだうえで、保護効果も得られると
いう事実を見出してなされたものである。即ち、
本発明の液相エピタキシヤル成長方法は、スライ
デイング法による液相エピタキシヤル成長におい
て、凹部を有する化合物半導体よりなる熱ダメー
ジ防止板を成長用化合物半導体基板上に被せて該
熱ダメージ防止板の凹部の底部と該成長用化合物
半導体基板の表面間に該成長用化合物半導体基板
の熱ダメージ防止効果の得られる〓間を設けた状
態で昇温してからボートのスライドを行なうこと
を特徴とする。
(ホ) 発明の実施例
第１図は本発明実施例にて使用する液相エピタ
キシヤル成長用ボートの構造断面を示す図であ
り、成長用基板及び成長用溶液をチヤージして、
液相成長開始に先立つて昇温する段階での状態を
示してある。同図ａは側断面、ｂはそれと直交す
る方向の成長基板配置部での断面図である。１は
ボートの固定部、２はスライド部、３は成長用の
InP基板、４はInP製の保護板、５はInP保護板４
の押さえ板、６，７，８は第１、２、３層成長用
溶液、９，１０，１１は蓋、１２はスライド操作
棒である。本発明ではInP保護板４に図示の如き
凹部を設け、その表面にIn折出粒ができても成長
用基板３の表面に接触して傷をつけることがない
ようにした。保護板４の凹部の形状は第２図に拡
大して示すように樋状であり、深さは一例として
50μmである。保護板４の外形寸法は、一例とし
ては厚みが１mmで、縦横各々30mmである。
次に、この成長用ボートを使用してエピタキシ
ヤル成長処理を行なつた結果の一例を説明する。
成長は次の条件で行なつた。
PH2ガス雰囲気中で670℃で2h放置後、0.5℃／
minの冷却速度で温度を降ろし660℃になつたと
ころでスライド部をスライドし第１層成長メルト
を基板の上に乗せた。650℃になつたところで再
びスライドし第２層成長メルトを乗せた。645℃
になつたところで再びスライドし第３層成長メル
トを基板の上に乗せた。640℃になつたところで
再びスライドし成長用メルトを基板上から取りは
ずし成長を終了した。各層の成長材料の仕込み量
を表１に示す。
(A) Technical Field of the Invention The present invention relates to a liquid phase epitaxial growth method using a sliding method, and particularly to an improvement of a protective plate for preventing thermal damage that is effective in liquid phase growth of InP-InGaAsP and the like. (b) Conventional technology and problems Conventionally, when liquid-phase epitaxial growth of InP-InGaAsP is carried out by the sliding method, the growth substrate and solution are charged in a sliding boat and the growth substrate is protected during the temperature raising process. Although it is covered with a plate to protect it from heat damage, conventional protection plates are flat and have the following drawbacks. When used repeatedly, In particles are deposited on the surface of the protective plate, and these particles come into contact with the growth substrate and even damage it. If you use it after etching each time to remove In particles, the area around the protective plate will start to sag from about the 5th use. As a result, the central portion of the protective plate comes into contact with the growth substrate, causing damage. (c) Purpose of the invention In view of the above points, the purpose of the present invention is to provide a method for liquid phase epitaxial growth using a sliding method.
The purpose of the present invention is to improve the form of a protective plate that is placed over a growth substrate when the temperature is raised before growth, so that the growth substrate will not be damaged even when used repeatedly. (d) Structure of the Invention The present invention provides that the effect of preventing heat damage on the surface of the InP substrate for growth by the InP protection plate is the same as that of the InP protection plate for growth.
This was done based on the discovery that a gap between the InP substrate surface and the surface of the InP substrate can be as large as 50 μm, so if a recess is provided in the InP protection plate, contact with the growth substrate surface can be prevented and a protective effect can also be obtained. . That is,
In the liquid phase epitaxial growth method of the present invention, in liquid phase epitaxial growth by a sliding method, a thermal damage prevention plate made of a compound semiconductor having a recessed portion is placed over a compound semiconductor substrate for growth, and the recessed portion of the thermal damage prevention plate is The boat is slid after the temperature is raised with a gap provided between the bottom of the substrate and the surface of the compound semiconductor substrate for growth to prevent thermal damage to the compound semiconductor substrate for growth. (E) Embodiments of the Invention FIG. 1 is a diagram showing a structural cross section of a boat for liquid phase epitaxial growth used in an embodiment of the invention, in which a growth substrate and a growth solution are charged,
The state is shown at the stage of temperature increase prior to the start of liquid phase growth. In the same figure, a is a side cross section, and b is a cross sectional view at a growth substrate arrangement part in a direction perpendicular to the side cross section. 1 is the fixed part of the boat, 2 is the sliding part, and 3 is for growth.
InP board, 4 is InP protection plate, 5 is InP protection plate 4
, 6, 7, and 8 are solutions for growing the first, second, and third layers, 9, 10, and 11 are lids, and 12 is a slide operating rod. In the present invention, the InP protection plate 4 is provided with a concave portion as shown in the figure, so that even if In precipitated grains are formed on the surface thereof, they will not contact and damage the surface of the growth substrate 3. The shape of the concave portion of the protection plate 4 is gutter-like as shown in the enlarged view in Fig. 2, and the depth is as an example.
It is 50μm. The outer dimensions of the protective plate 4 are, for example, 1 mm thick and 30 mm vertically and horizontally. Next, an example of the results of epitaxial growth using this growth boat will be described. Growth was carried out under the following conditions. After being left at 670℃ for 2 hours in a PH 2 gas atmosphere, 0.5℃/
The temperature was lowered at a cooling rate of min. When the temperature reached 660°C, the sliding part was slid to place the first layer growth melt on the substrate. When the temperature reached 650°C, it was slid again and the second layer growth melt was placed on it. 645℃
When the melt became flat, it was slid again to place the third layer growth melt on the substrate. When the temperature reached 640°C, the growth melt was removed from the substrate by sliding it again to complete the growth. Table 1 shows the amount of growth material for each layer.
【表】
InP保護板は最初の処理を１回行つただけで上
記の方法により20ラン（20枚）の成長を行つた。
20枚の成長ウエハ表面を調べたところ20枚全部
が合格であつた。InP保護板を連続して20回も使
用したにもかかわらず、InP保護板の劣化、ダレ
による成長基板表面への悪い影響がなかつた。
(ヘ) 発明の効果
本発明によれば、成長用基板への熱ダメージを
有効に防止しつつ、且つそのための保護板を成長
毎にエツチング処理したりする必要がないので、
工程時間短縮或いは材料の節約といつた効果が得
られる。[Table] InP protective plates were grown for 20 runs (20 sheets) using the above method after only one initial treatment. When the surfaces of 20 grown wafers were examined, all 20 wafers passed the test. Even though the InP protective plate was used 20 times in a row, there was no adverse effect on the growth substrate surface due to deterioration or sagging of the InP protective plate. (F) Effects of the Invention According to the present invention, thermal damage to the growth substrate can be effectively prevented, and there is no need to perform etching on a protective plate for each growth.
Effects such as shortening process time and saving materials can be obtained.
第１図ａ，ｂは本発明実施例にて使用した成長
用ボートの構造断面を示し、第２図は保護板の拡
大斜視図を示す。
１……ボートの固定部、２……ボートのスライ
ド部、３……成長用基板、４……保護板。
FIGS. 1a and 1b show a structural cross section of a growth boat used in an example of the present invention, and FIG. 2 shows an enlarged perspective view of a protection plate. 1... Fixed part of the boat, 2... Sliding part of the boat, 3... Growth substrate, 4... Protective plate.
Claims (1)
成長において、 凹部を有する化合物半導体よりなる熱ダメージ
防止板を成長用化合物半導体基板上に被せて該熱
ダメージ防止板の凹部の底部と該成長用化合物半
導体基板の表面間に該成長用化合物半導体基板の
熱ダメージ防止効果の得られる〓間を設けた状態
で昇温してからボートのスライドを行なうことを
特徴とする液相エピタキシヤル成長方法。[Claims] 1. In liquid phase epitaxial growth by sliding method, a thermal damage prevention plate made of a compound semiconductor having a recess is placed over a compound semiconductor substrate for growth, and the bottom of the recess of the thermal damage prevention plate and the Liquid phase epitaxial growth characterized by raising the temperature while providing a gap between the surfaces of the compound semiconductor substrate for growth, which is effective in preventing thermal damage to the compound semiconductor substrate for growth, and then sliding a boat. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58225601A JPS60117616A (en) | 1983-11-30 | 1983-11-30 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58225601A JPS60117616A (en) | 1983-11-30 | 1983-11-30 | Liquid phase epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60117616A JPS60117616A (en) | 1985-06-25 |
| JPH0210568B2 true JPH0210568B2 (en) | 1990-03-08 |
Family
ID=16831879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58225601A Granted JPS60117616A (en) | 1983-11-30 | 1983-11-30 | Liquid phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60117616A (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111214A (en) * | 1980-02-07 | 1981-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Carbon slider boat apparatus for liquid phase epitaxial growth |
| JPS58168571U (en) * | 1982-04-30 | 1983-11-10 | 日本電気株式会社 | Liquid phase epitaxial growth equipment |
| JPS5991729U (en) * | 1982-12-13 | 1984-06-21 | 日本電信電話株式会社 | Liquid phase epitaxial growth equipment |
-
1983
- 1983-11-30 JP JP58225601A patent/JPS60117616A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60117616A (en) | 1985-06-25 |
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