JPH02121325A - X-ray mask and manufacture thereof - Google Patents
X-ray mask and manufacture thereofInfo
- Publication number
- JPH02121325A JPH02121325A JP63273329A JP27332988A JPH02121325A JP H02121325 A JPH02121325 A JP H02121325A JP 63273329 A JP63273329 A JP 63273329A JP 27332988 A JP27332988 A JP 27332988A JP H02121325 A JPH02121325 A JP H02121325A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- substrate
- main surface
- ray mask
- mask substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 230000003014 reinforcing effect Effects 0.000 claims description 24
- 230000005855 radiation Effects 0.000 claims 1
- 239000006100 radiation absorber Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- 230000002787 reinforcement Effects 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- 239000006096 absorbing agent Substances 0.000 abstract description 5
- 238000001312 dry etching Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000007767 bonding agent Substances 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、Ｘ線マスクおよびその製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an X-ray mask and a method for manufacturing the same.
（従来の技術）
半導体素子の高集積化に伴い、微細なパターンを形成す
る技術が重要となってきている。光露光法では、光の回
折現象のため、微細なパターンを形成するのが困難であ
る。そこで、量産性に優れた次期超微細パターン形成方
法として、 Ｘ、１？ＩＮ光法の開発が進められている
。Ｘ線露光法においては、Ｘ線マスクの製作が重要であ
り、Ｘ線吸収体パターンの位置精度が問題となってくる
。(Prior Art) As semiconductor devices become more highly integrated, techniques for forming fine patterns have become important. In the light exposure method, it is difficult to form fine patterns due to the phenomenon of light diffraction. Therefore, as a next-generation ultra-fine pattern formation method with excellent mass productivity, X, 1? Development of the IN light method is underway. In the X-ray exposure method, the production of an X-ray mask is important, and the positional accuracy of the X-ray absorber pattern becomes an issue.
第４図を参照にして、従来のＸ線マスクの製作工程を説
明する。第４図（ａ）に示すように、Ｘ線マスク基板１
上にＸ線透過体層４．所要パターンを有するＸ線吸収体
層５．保護膜６を形成する。The manufacturing process of a conventional X-ray mask will be explained with reference to FIG. As shown in FIG. 4(a), the X-ray mask substrate 1
4. X-ray transmissive layer on top. X-ray absorber layer with required pattern5. A protective film 6 is formed.
次に、第４図（ｂ）のように、基板裏面に裏面エツチン
グの際のマスク９を形成し、エツチング領域を規定する
。その後、第４図（ｃ）に示すように、治具１０を用い
て補強枠７を取り付け、接着剤で固着した後、裏面から
基板のエツチングを行なう。Next, as shown in FIG. 4(b), a mask 9 for backside etching is formed on the backside of the substrate to define an etching area. Thereafter, as shown in FIG. 4(c), the reinforcing frame 7 is attached using a jig 10 and fixed with adhesive, and then the substrate is etched from the back side.
これにより、第４図（ｄ）のようなＸ線マスクが得られ
る。As a result, an X-ray mask as shown in FIG. 4(d) is obtained.
（発明が解決しようとする課題）
ここで、補強枠を取り付けずに基板の裏面エツチング行
なった場合、Ｘ線マスク部分の基板がエツチングにより
取り除かれるわけであるから、Ｘ線マスクは歪み１表面
に形成したＸ線吸収体パターンの位置精度が悪くなる。(Problem to be Solved by the Invention) Here, if the back side of the substrate is etched without attaching a reinforcing frame, the substrate in the X-ray mask area will be removed by etching, so the X-ray mask will be The positional accuracy of the formed X-ray absorber pattern deteriorates.
そのために補強枠７を取り付け、Ｘ線マスクの歪みを抑
えることが必要となってくる。Therefore, it is necessary to attach the reinforcing frame 7 to suppress distortion of the X-ray mask.
補強枠を取り付けた場合、Ｘ線露光装置では、補強枠の
外形を基準位置としてマスクステージを移動し、Ｘ線マ
スクに形成したアライメント用マークを検出するので、
補強枠とＸ線マスクとは精度よく取り付けなければなら
ない。When a reinforcing frame is attached, the X-ray exposure equipment moves the mask stage using the outline of the reinforcing frame as a reference position and detects the alignment mark formed on the X-ray mask.
The reinforcing frame and X-ray mask must be attached with precision.
従来においては、治具を用いて補強枠登坂り付けていた
が、その取り付は位置精度は、治具の寸法加工精度で決
定されていた。寸法加工精度のよい治具を作製するには
、非常にコストがかかり。In the past, a jig was used to attach the reinforcing frame uphill, but the positional accuracy of the attachment was determined by the dimensional processing accuracy of the jig. Producing a jig with good dimensional processing accuracy is extremely costly.
また、それ程寸法加工精度の優れた治具は得られないと
いう問題があった。Further, there was a problem that a jig with such excellent dimensional processing accuracy could not be obtained.
（′ａ題を解決するための手段）
上記課題を解決するために１本発明は、電子ビーム露光
技術とドライエツチング技術を適用して、Ｘ線マスク基
板の一主面に精度よく形成した凹部と、補強枠の一主面
に形成した凸部とを互いに嵌合させて、マスク基板と補
強枠とを接合するものである。(Means for Solving Problem 'a) In order to solve the above problems, the present invention applies electron beam exposure technology and dry etching technology to form recesses with high accuracy on one principal surface of an X-ray mask substrate. and a convex portion formed on one main surface of the reinforcing frame are fitted together to join the mask substrate and the reinforcing frame.
（作 用）
この楕成によれば、Ｘ線マスクと補強枠との取り付は位
置を精度よく制御することができる。(Function) According to this ellipse configuration, the attachment position of the X-ray mask and the reinforcing frame can be precisely controlled.
（実施例）
第１図は、本発明の一実施例のＸ線マスク製造における
工程順断面図であり、以下に詳述する。(Example) FIG. 1 is a cross-sectional view of the steps in manufacturing an X-ray mask according to an example of the present invention, which will be described in detail below.
第１図（ａ）に示すように、Ｘ線マスク基板１゜例えば
シリコンウェハの一方の主面に、窒化シリコン膜２を１
．０μ−の厚さに形成し、その上にポジ型の電子ビーム
レジストを塗布し、電子ビーム露光機により露光を行な
い、所定の領域にレジストパターン３を形成する。次に
、このレジストパターン３をマスクとして、第１図（ｂ
）のように、窒化シリコン膜２をドライエツチングによ
りエツチングし、基板エツチング領域２ａを形成すると
共に、所定の位置に開口凹部２ｂを形成する。この時の
裏面から見た平面図を第３図（ａ）に示す。As shown in FIG. 1(a), a silicon nitride film 2 is placed on one main surface of an X-ray mask substrate 1, for example, a silicon wafer.
．． A positive electron beam resist is applied thereon to a thickness of 0 μm, and exposed using an electron beam exposure machine to form a resist pattern 3 in a predetermined region. Next, using this resist pattern 3 as a mask, FIG.
), the silicon nitride film 2 is etched by dry etching to form a substrate etching region 2a and an opening recess 2b at a predetermined position. A plan view seen from the back surface at this time is shown in FIG. 3(a).
次に、第１図（ｃ）に示すように、Ｘ線マスク基板１の
他方の主面に、Ｘ線透過体層４．所要のパターンを有す
るＸ線吸収体層５．保護膜６を順次形成する０次いで、
第１図（ｄ）のように、基板１に形成した窒化シリコン
膜２の凹部２ｂに、補強枠７の一主面に形成した凸部８
を補強枠側から位置合わせして嵌合させ、接着剤を用い
てＸ線マスク基板１と補強枠７とを固着する。Next, as shown in FIG. 1(c), an X-ray transmitting layer 4. X-ray absorber layer with desired pattern5. Next, the protective film 6 is sequentially formed.
As shown in FIG. 1(d), a convex portion 8 is formed on one main surface of the reinforcing frame 7 in a concave portion 2b of the silicon nitride film 2 formed on the substrate 1.
are aligned and fitted from the reinforcing frame side, and the X-ray mask substrate 1 and the reinforcing frame 7 are fixed using an adhesive.
この補強枠７の凸部の形成方法を第２図を用いて説明す
る。第２図（ａ）のように、補強枠７、例えばパイレッ
クスガラス（コーニング社製、製品コードＮｏ、７７４
０）表面に金属８、例えばタングステンを全面に０．８
μｍの厚さに形成し、この上にネガ型電子ビームレジス
トを塗布し、第１図（ｂ）で形成した開口凹部２ｂに対
応する位置に、電子ビーム露光機により露光を行なって
レジストパターン１１を形成し、次に、このレジストパ
ターンをマスクとしてドライエツチングすることで、第
２図（ｂ）のようにタングステンの凸部８を形成する。A method of forming the convex portion of the reinforcing frame 7 will be explained using FIG. 2. As shown in FIG. 2(a), the reinforcing frame 7, for example, Pyrex glass (manufactured by Corning, product code No. 774)
0) Metal 8 on the surface, for example tungsten 0.8 on the entire surface
A negative electron beam resist is applied thereon, and a resist pattern 11 is exposed using an electron beam exposure machine at a position corresponding to the opening recess 2b formed in FIG. 1(b). Next, by dry etching using this resist pattern as a mask, tungsten convex portions 8 are formed as shown in FIG. 2(b).
この時の補強枠７の平面図を第３図（ｂ）に示す。A plan view of the reinforcing frame 7 at this time is shown in FIG. 3(b).
最後に、基板エツチング領域２ａに従ってＸ線マスク基
板１をエツチングすることで、第１図（ｅ）に示すよう
なＸ線マスクが作製される。Finally, by etching the X-ray mask substrate 1 according to the substrate etching region 2a, an X-ray mask as shown in FIG. 1(e) is manufactured.
（発明の効果）
以上詳述したように、本発明では、電子ビーム露光技術
とドライエツチング技術を用いて位置精度よく形成した
Ｘ線マスク基板の凹部と補強枠の凸部とを嵌合させるこ
とにより、数μ−程度の位置精度でＸ線マスクと補強枠
とを接合することが可能となる。(Effects of the Invention) As detailed above, in the present invention, the concave part of the X-ray mask substrate formed with high positional accuracy using electron beam exposure technology and dry etching technology is fitted with the convex part of the reinforcing frame. This makes it possible to join the X-ray mask and the reinforcing frame with a positional accuracy of several microns.
４、 図面の簡−ＣｔＬな説明
ｆ５１図は１本発明のＸ線マスクの製造方法を示す工程
順断面図、第２図は、補強枠の凸部を形成する一実施例
を示す断面図、第３図は、Ｘ線マスク基板と補強枠の各
接合面をそれぞれ示す平面図。4. Simple CtL explanation of the drawings f51 Figure 1 is a step-by-step cross-sectional view showing the method for manufacturing an X-ray mask of the present invention, Figure 2 is a cross-sectional view showing an example of forming a convex portion of a reinforcing frame, FIG. 3 is a plan view showing each joint surface of the X-ray mask substrate and the reinforcing frame.
第４図は、従来のＸ線マスクの製造方法を示す工程順断
面図である。FIG. 4 is a step-by-step sectional view showing a conventional method for manufacturing an X-ray mask.
１・・・Ｘ線マスク基板、 ２・・・窒化シリコン１
１奨、 ２ａ・・・基板エツチング領域、 ２ｂ凹部
、 ３・・・レジストパターン、 ４・・・Ｘ線透過
体層、 ５・・・Ｘ線吸収体層、 ６・・・保護膜、
７・・・補強枠、 ８・・・凸部（金属）。1... X-ray mask substrate, 2... Silicon nitride 1
1 Recommendation, 2a... Substrate etching area, 2b recess, 3... Resist pattern, 4... X-ray transmitting layer, 5... X-ray absorbing layer, 6... Protective film,
7... Reinforcement frame, 8... Convex portion (metal).
特許出願人 松下電子工業株式会社 第 図Patent applicant: Matsushita Electronics Industry Co., Ltd. No. figure
Claims (2)
強枠の一主面の前記凹部に対応する位置に形設された凸
部とを互いに嵌合させて、前記Ｘ線マスク基板と補強枠
とを接合してなることを特徴とするＸ線マスク。(1) A recess formed on one main surface of the X-ray mask substrate and a protrusion formed at a position corresponding to the recess on one main surface of the reinforcing frame are fitted together, and the X-ray An X-ray mask characterized by being formed by joining a mask substrate and a reinforcing frame.
チングするためのマスク用の膜を形成し、そのマスク用
膜に対して基板エッチング領域のパターンと共に所定の
位置に開口凹部を形成する工程と、前記Ｘ線マスク基板
の他方の主面にＸ線透過体層、所定パターンを有するＸ
線吸収体層および保護膜を順次形成する工程と、補強枠
の一主面の前記開口凹部に対応する位置に形設した凸部
を前記Ｘ線マスク基板の開口凹部に嵌合させて前記Ｘ線
マスク基板と補強枠とを接合する工程と、前記マスク用
膜の基板エッチング領域パターンに従って前記Ｘ線マス
ク基板をエッチングする工程とからなることを特徴とす
るＸ線マスクの製造方法。(2) A mask film for etching the mask substrate is formed on one main surface of the X-ray mask substrate, and an opening recess is formed at a predetermined position along with a pattern of the substrate etching region on the mask film. and an X-ray transparent layer having a predetermined pattern on the other main surface of the X-ray mask substrate.
a step of sequentially forming a radiation absorber layer and a protective film; and a step of fitting a convex portion formed at a position corresponding to the opening recess on one main surface of the reinforcing frame into the opening recess of the X-ray mask substrate; A method for manufacturing an X-ray mask, comprising the steps of: joining a radiation mask substrate and a reinforcing frame; and etching the X-ray mask substrate according to a substrate etching region pattern of the mask film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63273329A JPH02121325A (en) | 1988-10-31 | 1988-10-31 | X-ray mask and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63273329A JPH02121325A (en) | 1988-10-31 | 1988-10-31 | X-ray mask and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02121325A true JPH02121325A (en) | 1990-05-09 |
Family
ID=17526368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63273329A Pending JPH02121325A (en) | 1988-10-31 | 1988-10-31 | X-ray mask and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02121325A (en) |
-
1988
- 1988-10-31 JP JP63273329A patent/JPH02121325A/en active Pending
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