JPH02133902A - Manufacture of voltage nonlinear resistor - Google Patents
Manufacture of voltage nonlinear resistorInfo
- Publication number
- JPH02133902A JPH02133902A JP63286885A JP28688588A JPH02133902A JP H02133902 A JPH02133902 A JP H02133902A JP 63286885 A JP63286885 A JP 63286885A JP 28688588 A JP28688588 A JP 28688588A JP H02133902 A JPH02133902 A JP H02133902A
- Authority
- JP
- Japan
- Prior art keywords
- resistance layer
- mixture
- side high
- compound
- baked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 17
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000011787 zinc oxide Substances 0.000 claims abstract description 10
- 150000001463 antimony compounds Chemical class 0.000 claims abstract description 6
- 150000001622 bismuth compounds Chemical class 0.000 claims abstract description 6
- 239000000654 additive Substances 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 1
- 239000011230 binding agent Substances 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- -1 First Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical group C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 239000004110 Zinc silicate Substances 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000005649 metathesis reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 150000003752 zinc compounds Chemical class 0.000 description 2
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 2
- 235000019352 zinc silicate Nutrition 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は酸化亜鉛を主成分とする電圧非直線抵抗体の製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a voltage nonlinear resistor containing zinc oxide as a main component.
（従来の技術）
従来から酸化亜鉛を主成分としＢ１２Ｏ３，５ｂｚＯｉ
。(Prior art) B12O3,5bzOi has traditionally been made mainly of zinc oxide.
.
５Ｌ０２１ ＣＯ２０３１Ｍｎ０ｚ等の少量の添加物を
含有した抵抗体は、優れた電圧非直線性を示すことが広
く知られており、その性質を利用して避雷器等に使用さ
れている。It is widely known that resistors containing small amounts of additives such as 5L021 CO2031Mn0z exhibit excellent voltage nonlinearity, and are used in lightning arresters and the like by taking advantage of this property.
この電圧非直線抵抗体では、雷等のサージ電流が素子に
印加された場合に主として素子側面に沿った放電いわゆ
る沿面放電が生じ素子が破壊することがあるため、円周
側面にＢ１−９ｂ−３ｉ系化合物またはＢ１−３ｂ−５
ｉ−Ｚｎ系化合物よりなる高抵抗層を設けるのが一般的
である。In this voltage nonlinear resistor, when a surge current such as lightning is applied to the element, discharge mainly occurs along the side surface of the element, so-called creeping discharge, which may destroy the element. 3i compound or B1-3b-5
It is common to provide a high resistance layer made of an i-Zn compound.
（発明が解決しようとする課題）
このうち、Ｓｉ成分は高抵抗層中にスビ♀ルを生成し、
雷サージ耐量向上に効果がある。しかしながら、従来は
Ｓｔ成分付与として結晶質の５ｉＯｚ等を粉砕せずその
まま使用していたため粒度も粗く、連続的に均一に生成
してはじめてその効果のあるケイ酸亜鉛相が不均一に生
成する場合があった。(Problem to be solved by the invention) Among these, the Si component generates fine particles in the high resistance layer,
Effective in improving lightning surge resistance. However, in the past, crystalline 5iOz etc. were used as they were without being crushed to provide the St component, so the particle size was coarse, and the zinc silicate phase, which is effective only if it is produced uniformly and continuously, may be produced unevenly. was there.
そのような場合は、雷サージ耐量も向上せずそのバラツ
キが大となるとともに、側面高抵抗層も吸湿を示し長期
信頬性に欠ける等良好な特性を有する電圧非直線抵抗体
を得られない問題があった。In such a case, the lightning surge resistance does not improve and its variation becomes large, and the high resistance layer on the side also absorbs moisture and lacks long-term reliability, making it impossible to obtain a voltage nonlinear resistor with good characteristics. There was a problem.
本発明の目的は上述した課題を解消して、雷サージ耐量
の向上が可能でそのバラツキも少ないとともに側面高抵
抗層の吸湿性をも改善できる電圧非直線抵抗体の製造方
法を捉供しようとするものである。The purpose of the present invention is to solve the above-mentioned problems and provide a method for manufacturing a voltage nonlinear resistor that can improve lightning surge resistance with less variation, and can also improve the moisture absorption of the side high resistance layer. It is something to do.
（課題を解決するための手段）
本発明の電圧非直線抵抗体の製造方法は、酸化亜鉛を主
成分とする電圧非直線抵抗体の側面に、少なくともケイ
素化合物、アンチモン化合物、ビスマス化合物よりなる
側面高抵抗層用の混合物を塗布し次いで焼成する電圧非
直線抵抗体の製造方法において、前記混合物中のケイ素
化合物が非晶質シリカであり、その平均粒径が１０μｍ
以下であることを特徴とするものである。(Means for Solving the Problems) The method for manufacturing a voltage non-linear resistor of the present invention provides a method for manufacturing a voltage non-linear resistor containing zinc oxide as a main component. A method for manufacturing a voltage nonlinear resistor in which a mixture for a high resistance layer is applied and then fired, wherein the silicon compound in the mixture is amorphous silica, and the average particle size is 10 μm.
It is characterized by the following.
（作 用）
上述した構成において、本発明者らはＳｉ成分の付与方
法について種々検討した結果、高抵抗層を形成する混合
物中のＳｉ成分として非晶質シリカを使用するとともに
、その平均粒径が１０μｍ以下好ましくは６μｍ以下で
あると、良好なケイ酸亜鉛相が得られ、その結果後述す
る実施例からも明らかなように雷サージ耐量が向上しそ
のバラツキが減少するとともに、側面高抵抗層の吸湿性
も改善されることを見出した。(Function) In the above-mentioned structure, the present inventors investigated various methods of applying the Si component, and found that amorphous silica was used as the Si component in the mixture forming the high-resistance layer, and the average particle size of the amorphous silica was is 10 μm or less, preferably 6 μm or less, a good zinc silicate phase is obtained, and as a result, as is clear from the examples described later, the lightning surge resistance is improved and its variation is reduced, and the side high resistance layer is It was also found that the hygroscopicity of
なお、非晶質シリカの製造方法については特に限定する
ものではないが、ケイ酸ナトリウムの複分解反応から得
られたものまたは四塩化ケイ素の熱分解により得られた
ものを使用すると、後述する実施例から明らかなように
より特性が良好になるため好ましい。また、その純度は
ＳｉＯ□として９５％以上であると好ましい。The method for producing amorphous silica is not particularly limited, but if one obtained from the metathesis reaction of sodium silicate or the one obtained by thermal decomposition of silicon tetrachloride is used, it will be possible to produce the amorphous silica in the Examples described below. As is clear from the above, it is preferable because the characteristics are better. Further, the purity thereof is preferably 95% or more as SiO□.
さらに、側面高抵抗層を形成する混合物としては、非晶
質シリカ、ビスマス化合物、アンチモン化合物をＳｉＯ
□、 ＢｉｚＯｚ、 ５ｂｚＯｚに換算して、５ｉＯｚ
７０〜９５モル％、好ましくは８０〜９０モル％、Ｂ１
２（ｈ １〜１５モル％、好ましくは３〜１０モル％
、５ｂｚｏ：＋ ３〜２０モル％、好ましくは５〜１５
モル％、必要に応じて亜鉛化合物を外記でＺｎＯに換算
して１５０モル％以下好ましくは８０モル％以下に添加
したしたものが好ましく、全体の平均粒径が１０μｍ以
下であると好ましい。また、側面高抵抗層の厚さは３０
〜１５０μｍであると好ましい。Furthermore, as a mixture for forming the side high resistance layer, amorphous silica, bismuth compound, and antimony compound are used as SiO
□, BizOz, converted to 5bzOz, 5iOz
70-95 mol%, preferably 80-90 mol%, B1
2 (h 1-15 mol%, preferably 3-10 mol%
, 5bzo: +3 to 20 mol%, preferably 5 to 15
Preferably, the zinc compound is added in an amount of 150 mol % or less, preferably 80 mol % or less, calculated as ZnO, if necessary, and the overall average particle diameter is preferably 10 μm or less. In addition, the thickness of the side high resistance layer is 30
It is preferable that it is 150 micrometers.
ここで側面高抵抗層用の混合物の組成として、ビスマス
化合物、アンチモン化合物、亜鉛化合物を規定したが、
各化合物とも１０００°Ｃ以下、好ましくは８００°Ｃ
以下で酸化物に変化するものであればよい。具体的には
酸化物、炭酸塩、硝酸塩、水酸化物等があげられるが、
酸化物が最も好ましい。Here, a bismuth compound, an antimony compound, and a zinc compound were specified as the composition of the mixture for the side high resistance layer.
1000°C or less for each compound, preferably 800°C
Any material that can be converted into an oxide in the following steps may be used. Specific examples include oxides, carbonates, nitrates, hydroxides, etc.
Oxides are most preferred.
（実施例）
酸化亜鉛を主成分とする電圧非直線抵抗体を得るには、
まず所定の粒度に調整した酸化亜鉛原料と所定の粒度に
調整したＢｉ２Ｏ３，Ｃｏ：＋Ｌ＋ ＭｎＯ２゜Ｓｂ、
Ｏ，、Ｃｒ、０３．５ｉＯｚ、 ＮｉＯ等よりなる添加
物の所定量を混合する。この際、これらの原料粉末に対
して所定量のポリビニルアルコール水溶液等を加え、好
ましくはデイスパーミルにより混合した後、好ましくは
スプレードライヤにより造粒して造粒物を得る。造粒後
、成形圧力８００〜１０００ｋｇ／ｃＪＯ下で所定の形
成に成形する。その成形体を昇降温速度５０〜７０°Ｃ
／ｈｒで８００〜１０００°Ｃ保持時間１〜５時間とい
う条件で仮焼成する。(Example) To obtain a voltage nonlinear resistor whose main component is zinc oxide,
First, zinc oxide raw material adjusted to a predetermined particle size, Bi2O3, Co:+L+ MnO2°Sb, adjusted to a predetermined particle size,
A predetermined amount of additives such as O, Cr, 03.5 iOz, NiO, etc. are mixed. At this time, a predetermined amount of polyvinyl alcohol aqueous solution or the like is added to these raw material powders, mixed preferably in a disper mill, and then granulated, preferably in a spray dryer, to obtain a granulated product. After granulation, it is molded into a predetermined shape under a molding pressure of 800 to 1000 kg/cJO. The molded body is heated and cooled at a rate of 50 to 70°C.
Temporary firing is performed at 800 to 1000° C. for 1 to 5 hours.
なお、仮焼の前に成形体を昇降温速度１０〜１００”Ｃ
／ｈｒで４００〜６００°Ｃで１〜１０時間保持し、結
合剤を飛散除去することが好ましい。そして本発明の素
体とは成形体を前記条件で熱処理した脱脂体をいう。In addition, before calcination, the molded body is heated and cooled at a rate of 10 to 100"C.
It is preferable to hold the binder at 400 to 600°C for 1 to 10 hours to remove the binder by scattering. The element body of the present invention refers to a degreased body obtained by heat-treating a molded body under the above conditions.
次に、仮焼成した仮焼体の側面に側面高抵抗層を形成す
る。本発明では、ビスマス化合物、アンチモン化合物、
ケイ素化合物等の所定量に有機結合剤としてエチルセル
ロース、ブチルカルピトール、酢酸ｎブチル等を加えた
側面高抵抗層用の混合物ペーストを、６０〜３００μｍ
の厚さに仮焼体の側面に塗布する。この際、本発明では
ケイ素化合物として、平均粒径が１０μｍ以下の非晶質
シリカを使用する。なお、前記混合物ペーストは素体に
塗布してもよい。次に、これを昇降温速度４０〜６０’
Ｃ／ｈｒ、 １０００〜１３００°Ｃ好ましくは１１０
０〜１２５０°Ｃ１３〜７時間という条件で本焼成する
。なお、ガラス粉末に有機結合剤としてエチルセルロー
ス、ブチルカルピトール、酢酸ｎブチル等を加えたガラ
スペーストを前記の側面高抵抗層上に１００〜３００μ
ｍの厚さに塗布し、空気中で昇降温速度１００〜２００
°Ｃ／ｈｒ、４００〜６００°Ｃ保持時間０．５〜２時
間という条件で熱処理することによりガラス層を形成す
ると好ましい。Next, a side high resistance layer is formed on the side surface of the calcined body. In the present invention, bismuth compounds, antimony compounds,
A mixture paste for the side high resistance layer is prepared by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to a predetermined amount of a silicon compound, etc.
Coat the sides of the calcined body to a thickness of . At this time, in the present invention, amorphous silica having an average particle size of 10 μm or less is used as the silicon compound. Note that the mixture paste may be applied to the element body. Next, increase and decrease the temperature at a rate of 40 to 60'.
C/hr, 1000-1300°C preferably 110
Main firing is performed at 0 to 1250°C for 13 to 7 hours. In addition, a glass paste made by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to glass powder is applied to the above-mentioned side high-resistance layer to a thickness of 100 to 300 μm.
Coated to a thickness of m and heated at a rate of 100 to 200 in air.
It is preferable to form the glass layer by heat treatment under conditions of 0.5 to 2 hours at a temperature of 400 to 600 degrees C/hr.
その後、得られた電圧非直線抵抗体の両端面をＳ＋Ｃ，
Ａ １２（）３＋ ダイヤモンド等の＃４００〜２０
００相当の研磨剤により水好ましくは油を使用して研磨
する。次に、研磨面を洗浄後、研磨した両端面に例えば
アルミニウムによって電極を例えば溶射により設けて電
圧非直線抵抗体を得ている。After that, both end faces of the obtained voltage nonlinear resistor are S+C,
A 12()3+ Diamond etc. #400~20
Polishing with water, preferably oil, with an abrasive equivalent to 0.00. Next, after cleaning the polished surfaces, electrodes made of, for example, aluminum are provided on both polished end surfaces by, for example, thermal spraying to obtain a voltage nonlinear resistor.
以下、実際に本発明範囲内および範囲外の電圧非直線抵
抗体について各種特性を測定した結果について説明する
。Below, the results of actually measuring various characteristics of voltage nonlinear resistors within and outside the range of the present invention will be described.
側１ガ
上述した方法で作成した直径４７胴、厚さ２０＋ｎｍの
電圧非直線抵抗体において、側面高抵抗層用の混合物中
のケイ素化合物の状態および平均粒径の影響を調べるた
め、素子本体の組成はＢｔｚＯｉ １．０モル％、ｃｏ
、ｏ、 ０．７モル％、Ｍｎ０ｚ ０．５モル％、５ｂ
ｚｏ：＋１．０モル％、Ｃｒ２Ｏ３０，５モル％、Ｎｉ
ＯＯ，５モル％、Ａ Ｐ、２ｏ３０．００５モル％、Ｓ
ｉ０□２モル％および残部がＺｎＯとしてケイ素化合物
として非晶質シリカを使用するとともに平均粒径が１０
μｍ以下である本発明範囲内の試料Ｎｏ、 １〜９と、
いずれかの点で本発明の範囲を満たさない比較例Ｎｏ、
１〜４を準備し、それぞれの雷サージ耐量破壊率と側
面高抵抗層の吸湿性を測定した。ここで、側面高抵抗層
用のケイ素化合物以外の混合物はビスマス化合物として
は平均粒径５μｍの酸化ビスマスを、アンチモン化合物
としては平均粒径３μｍの酸化アンチモンを使用した。Side 1G In order to investigate the state of the silicon compound in the mixture for the side high resistance layer and the influence of the average particle size on the voltage nonlinear resistor with a diameter of 47 mm and a thickness of 20 + nm prepared by the method described above, The composition is BtzOi 1.0 mol%, co
, o, 0.7 mol%, Mn0z 0.5 mol%, 5b
zo: +1.0 mol%, Cr2O30.5 mol%, Ni
OO, 5 mol%, AP, 2o30.005 mol%, S
i0□2 mol% and the balance is ZnO, amorphous silica is used as the silicon compound, and the average particle size is 10
Sample Nos. 1 to 9 within the scope of the present invention having a diameter of μm or less,
Comparative example No. which does not satisfy the scope of the present invention in any respect,
Tests No. 1 to No. 4 were prepared, and the lightning surge withstand breakdown rate and hygroscopicity of the side high resistance layer were measured. Here, for the mixture other than the silicon compound for the side high resistance layer, bismuth oxide with an average particle size of 5 μm was used as the bismuth compound, and antimony oxide with an average particle size of 3 μm was used as the antimony compound.
また、側面高抵抗層用の混合物は５ｉ０２８５モル％、
Ｂｉｇ（ｈ ５モル％、５ｂ２０３１０モル％の三元系
とした。使用したケイ素化合物のうち非晶質シリカにつ
いては、第１図（ａ）〜（ｃ）の製造方法に従って作成
したものを使用し、第１図（ａ）に従ったものをＡ、第
１図（ｂ）に従ったものをＢ、第１図（ｃ）に従ったも
のをＣと第１表中に表記した。結果を第１表に示す。In addition, the mixture for the side high resistance layer is 5i0285 mol%,
A ternary system of Big (h 5 mol%, 5b203 10 mol% was used. Among the silicon compounds used, amorphous silica was prepared according to the manufacturing method shown in Fig. 1 (a) to (c). , those according to Fig. 1(a) are indicated as A, those according to Fig. 1(b) are indicated as B, and those according to Fig. 1(c) are indicated as C in Table 1.The results are shown below. Shown in Table 1.
第１表において、雷サージ耐量破壊率は、１００ＫＡ１
１０にＡ、 １２０にＡのパルス電流を４７１０μｓの
電流波形で２回印加した後破壊したものの割合を示した
。In Table 1, the lightning surge resistance breakdown rate is 100KA1
The rate of destruction after applying pulse currents of 10 A and 120 A twice with a current waveform of 4710 μs is shown.
また、側面高抵抗層の吸湿性は、素子を蛍光探傷液中に
圧力２００ ｋｇ／ｃ＋＋１の状態で２４時間浸漬した
後の吸湿状態を検査し、高抵抗層に滲みのないものを○
、滲みの若干あるものをΔ、滲みの多いものを×として
表示した。In addition, the hygroscopicity of the side high resistance layer is determined by inspecting the moisture absorption state after immersing the element in a fluorescent flaw detection liquid at a pressure of 200 kg/c++1 for 24 hours.
, those with some bleeding were indicated as Δ, and those with a lot of bleeding were indicated as ×.
第１表の結果から、ケイ素化合物として非晶質シリカを
使用するとともにその平均粒径を１０μｍ以下とした本
発明試料Ｎｏ、 １〜９は、いずれかの点で本発明を満
足しない比較例Ｎｏ、 １〜４と比較して、良好な雷サ
ージ耐量と良好な吸湿性を示すことがわかった。また、
本発明の中でも、非晶質シリカとしてケイ酸ナトリウム
の複分解反応を利用して得たものまたは四塩化ケイ素の
熱分解反応を利用して得たものを使用すると、雷サージ
耐量がより減少し好ましいことがわかる。さらに、ケイ
素化合物の平均粒径については、６μｍ以下であるとさ
らに雷サージ耐量破壊率が減少し好ましいことがわかる
。From the results in Table 1, inventive samples Nos. 1 to 9, which use amorphous silica as a silicon compound and have an average particle size of 10 μm or less, are compared to comparative example Nos. 1 to 9, which do not satisfy the present invention in any respect. , 1 to 4, it was found that they exhibited good lightning surge resistance and good moisture absorption. Also,
In the present invention, it is preferable to use amorphous silica obtained by utilizing metathesis reaction of sodium silicate or silica obtained by utilizing thermal decomposition reaction of silicon tetrachloride because the lightning surge resistance is further reduced. I understand that. Furthermore, it can be seen that it is preferable that the average particle size of the silicon compound is 6 μm or less because the lightning surge resistance breakdown rate further decreases.
（発明の効果）
以上の説明から明らかなように、本発明の電圧非直線抵
抗体の製造方法によれば、側面高抵抗層用の混合物中の
ケイ素化合物の状態および平均粒径を規定することによ
り、良好でバラツキも少ない雷サージ耐量を有するとと
もに側面高抵抗層の吸湿性も改善された電圧非直線抵抗
体を得ることができる。(Effects of the Invention) As is clear from the above explanation, according to the method for manufacturing a voltage nonlinear resistor of the present invention, the state and average particle size of the silicon compound in the mixture for the side high resistance layer can be specified. As a result, it is possible to obtain a voltage nonlinear resistor that has good lightning surge resistance with little variation and also has improved hygroscopicity of the side high resistance layer.
また、開閉サージ耐量、課電寿命、制限電圧についても
良好な特性が確認された。In addition, good characteristics were confirmed in terms of switching surge withstand capacity, energized lifespan, and limiting voltage.
第１図（ａ）〜（ｃ）はそれぞれ本発明で使用する非晶
質シリカの製造方法の一例を示すフローチャートである
。FIGS. 1(a) to 1(c) are flowcharts each showing an example of a method for producing amorphous silica used in the present invention.
Claims (1)
、少なくともケイ素化合物、アンチモン化合物、ビスマ
ス化合物よりなる側面高抵抗層用の混合物を塗布し次い
で焼成する電圧非直線抵抗体の製造方法において、前記
混合物中のケイ素化合物が非晶質シリカであり、その平
均粒径が１０μｍ以下であることを特徴とする電圧非直
線抵抗体の製造方法。1. In a method for manufacturing a voltage nonlinear resistor, the mixture for forming a side high resistance layer consisting of at least a silicon compound, an antimony compound, and a bismuth compound is applied to the side surface of a voltage nonlinear resistor containing zinc oxide as a main component, and then baked. A method for manufacturing a voltage nonlinear resistor, characterized in that the silicon compound in the mixture is amorphous silica, and the average particle size thereof is 10 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63286885A JPH0812808B2 (en) | 1988-11-15 | 1988-11-15 | Method of manufacturing voltage non-linear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63286885A JPH0812808B2 (en) | 1988-11-15 | 1988-11-15 | Method of manufacturing voltage non-linear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02133902A true JPH02133902A (en) | 1990-05-23 |
| JPH0812808B2 JPH0812808B2 (en) | 1996-02-07 |
Family
ID=17710261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63286885A Expired - Lifetime JPH0812808B2 (en) | 1988-11-15 | 1988-11-15 | Method of manufacturing voltage non-linear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0812808B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020119935A (en) * | 2019-01-21 | 2020-08-06 | パナソニックＩｐマネジメント株式会社 | Multilayer varistor and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329375A (en) * | 1976-09-01 | 1978-03-18 | Suwa Seikosha Kk | Method of manufacturing colored mouldings |
| JPS5548441A (en) * | 1979-09-22 | 1980-04-07 | Kitamura Gokin Seisakusho:Kk | Center deflection reforming and rolling device of valve bar material in thread rolling machine |
-
1988
- 1988-11-15 JP JP63286885A patent/JPH0812808B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329375A (en) * | 1976-09-01 | 1978-03-18 | Suwa Seikosha Kk | Method of manufacturing colored mouldings |
| JPS5548441A (en) * | 1979-09-22 | 1980-04-07 | Kitamura Gokin Seisakusho:Kk | Center deflection reforming and rolling device of valve bar material in thread rolling machine |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020119935A (en) * | 2019-01-21 | 2020-08-06 | パナソニックＩｐマネジメント株式会社 | Multilayer varistor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0812808B2 (en) | 1996-02-07 |
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