JPH02134801A - Voltage non-linear resistor and manufacture of the same - Google Patents
Voltage non-linear resistor and manufacture of the sameInfo
- Publication number
- JPH02134801A JPH02134801A JP63287517A JP28751788A JPH02134801A JP H02134801 A JPH02134801 A JP H02134801A JP 63287517 A JP63287517 A JP 63287517A JP 28751788 A JP28751788 A JP 28751788A JP H02134801 A JPH02134801 A JP H02134801A
- Authority
- JP
- Japan
- Prior art keywords
- zinc
- zinc oxide
- voltage
- resistor
- voltage non
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 85
- 239000011787 zinc oxide Substances 0.000 claims abstract description 41
- 239000011701 zinc Substances 0.000 claims abstract description 28
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 27
- 239000002245 particle Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000010304 firing Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000011268 mixed slurry Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910001923 silver oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- -1 First Substances 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は酸化亜鉛を主成分とする電圧非直線抵抗体およ
びその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a voltage nonlinear resistor containing zinc oxide as a main component and a method for manufacturing the same.
(従来の技術)
従来から酸化亜鉛(ZnO)を主成分としBxtOa+
5bz02+ 5sOz+ C0zOs+ FInOt
等の少量の添加物を副成分として含有した抵抗体は、優
れた電圧非直線性を示すことが広く知られており、その
性質を利用して避雷器等に使用されている。(Conventional technology) Conventionally, zinc oxide (ZnO) is the main component, and BxtOa+
5bz02+ 5sOz+ C0zOs+ FInOt
It is widely known that a resistor containing a small amount of additives such as .
この酸化亜鉛を主成分とする電圧非直線抵抗体において
、大電流領域での非直線性を改善させるために、従来、
(1)微量のAIイオン、 Gaイオン+Inイオンを
焼結中に拡散させ、Zn0O比抵抗を下げる原子価制御
法、(2)特開昭58−122703号公報で開示され
た、ZnOとA120i+ GatOi+ IntO+
を予じめ仮焼してA1* Ga+ Inイオンを焼結体
中へ拡散させた後、副成分と混合し成形する方法が知ら
れている。Conventionally, in order to improve the nonlinearity in the large current region of this voltage nonlinear resistor whose main component is zinc oxide,
(1) A valence control method in which trace amounts of AI ions, Ga ions + In ions are diffused during sintering to lower the Zn0O resistivity, (2) ZnO and A120i + GatOi + disclosed in JP-A-58-122703. IntO+
A method is known in which A1*Ga+In ions are preliminarily calcined to diffuse into a sintered body, and then mixed with subcomponents and shaped.
(発明が解決しようとする課題)
しかしながら、上述した原子価制御法(1)においては
、主成分のZnOや副成分とともに^lイオン等を単に
混合成形して焼結するだけであるため、微量のAI+
Ga、 Inイオンが十分にZnO結晶中へ均一に分散
されず、大部分は粒界層、スピネル相へとりこまれてい
た。従って、大電流領域の非直線性の改善が不充分で、
課電寿命が悪化するとともに、雷サージ印加後のバリス
タ電圧が大きく低下するため、常時課電では抵抗体が熱
暴走するという問題があった。(Problem to be Solved by the Invention) However, in the above-mentioned valence control method (1), since the main component ZnO and subcomponents are simply mixed and molded, ^l ions, etc. are mixed and sintered. AI+
Ga and In ions were not sufficiently uniformly dispersed in the ZnO crystal, and most of them were incorporated into the grain boundary layer and spinel phase. Therefore, the improvement of nonlinearity in the large current region is insufficient,
In addition to deteriorating the energizing life, the varistor voltage decreases significantly after a lightning surge is applied, so constant energization causes a problem of thermal runaway in the resistor.
また、特開昭58−122703号公報で開示された方
法(2)では、上述した原子価制御方法(1)よりも効
果はあるが、ZnOが不均一に粒子成長するためサージ
耐量が低下する問題があった。Furthermore, method (2) disclosed in JP-A-58-122703 is more effective than the above-mentioned valence control method (1), but the surge resistance is reduced due to non-uniform grain growth of ZnO. There was a problem.
本発明の目的は上述した課題を解消して、大電流域にお
ける電圧非直線性を改善できるとともに、課電寿命およ
びサージ耐量も良好な電圧非直線抵抗体及びその製造方
法を提供しようとするものである。An object of the present invention is to solve the above-mentioned problems and provide a voltage nonlinear resistor that can improve voltage nonlinearity in a large current range and also has good charging life and surge resistance, and a method for manufacturing the same. It is.
(課題を解決するための手段)
本発明の電圧非直線抵抗体は、酸化亜鉛を主成分とし電
圧非直線性を有する焼結体において、焼結体中の酸化亜
鉛粒子の中央部に金属亜鉛相を含有することを特徴とす
るものである。(Means for Solving the Problems) The voltage nonlinear resistor of the present invention is a sintered body containing zinc oxide as a main component and having voltage nonlinearity. It is characterized by containing a phase.
また、本発明の電圧非直線抵抗体の製造方法は、亜鉛蒸
気を酸化する間接法により製造した酸化亜鉛を主成分と
する電圧非直線抵抗体の製造方法において、酸化亜鉛原
料として亜鉛蒸気を酸素分圧100torr以下の雰囲
気で酸化して得たものを使用することを特徴とするもの
である。In addition, the method for manufacturing a voltage nonlinear resistor of the present invention is a method for manufacturing a voltage nonlinear resistor whose main component is zinc oxide, which is manufactured by an indirect method of oxidizing zinc vapor. It is characterized in that it uses a material obtained by oxidation in an atmosphere with a partial pressure of 100 torr or less.
(作 用)
上述した構成において、本発明の電圧非直線抵抗体では
、例えば第1図に抵抗体中の平均粒径りが10μm程度
のZnO粒子の断面を示すように、中央部の粒径dの金
属亜鉛相とその周囲の酸化亜鉛相とによりZnO粒子を
構成することにより、各粒子の抵抗が小さくでき、各粒
界間の電位障壁も均一にすることができるため、大電流
域における電圧非直線性を改善できるとともに、各種特
性も良好な抵抗体を得ることができる。なお、金属亜鉛
相の大きさは、後述する実施例から明らかなようにd/
D=0.30〜0.95の範囲が好ましい。ここで金属
亜鉛相はすべてのZnO粒子に含まれることが好ましい
が、必ずしもすべてに限定されるものではない。(Function) In the voltage nonlinear resistor of the present invention, in the above-described configuration, for example, as shown in FIG. 1, which shows a cross section of ZnO particles having an average grain size of about 10 μm, By forming ZnO particles with the metallic zinc phase of d and the surrounding zinc oxide phase, the resistance of each particle can be reduced and the potential barrier between each grain boundary can be made uniform, so that It is possible to improve voltage nonlinearity and obtain a resistor with good various characteristics. Note that the size of the metallic zinc phase is d/as is clear from the examples described later.
The range of D=0.30 to 0.95 is preferable. Here, it is preferable that the metallic zinc phase is contained in all the ZnO particles, but it is not necessarily limited to all the ZnO particles.
また、本発明の電圧非直線抵抗体の製造方法では、亜鉛
蒸気を酸素分圧IQQtorr以下好ましくは10to
rr以下の雰囲気で酸化させることにより上述したZn
O粒子を得ることができ、このZnO粒子を使用して電
圧非直線抵抗体を製造すれば、上述したように大電流域
における電圧非直線性を改善できるとともに、各種特性
も良好な抵抗体を得ることができる。Further, in the method for manufacturing a voltage nonlinear resistor of the present invention, zinc vapor is heated to an oxygen partial pressure of IQQtorr or less, preferably 10 torr.
The above-mentioned Zn is oxidized in an atmosphere below rr.
If O particles can be obtained and a voltage nonlinear resistor is manufactured using these ZnO particles, voltage nonlinearity in a large current range can be improved as described above, and a resistor with good various characteristics can be produced. Obtainable.
この際、抵抗体の本焼成を酸素分圧を小さくした状態で
実施した後に500〜900°Cでアニール処理をする
か、または本焼前半は酸素分圧を小さくして後半は大気
中で実施すると、ZnO粒子の性質が変化しにくいため
好ましい。At this time, either perform the main firing of the resistor with a low oxygen partial pressure and then perform an annealing treatment at 500 to 900°C, or perform the first half of the main firing with a low oxygen partial pressure and the second half in the atmosphere. This is preferable because the properties of the ZnO particles are less likely to change.
(実施例)
第2図は従来から公知の本発明の電圧非直線抵抗体の製
造方法を実施する装置の一例の構成を示す図である。第
2図において、1は原料となる金属亜鉛、2は金属亜鉛
1を溶融するための溶融炉、3は酸化反応を実施するレ
トルト炉、4は冷却ダクト、5は捕集タンク、6は排風
器、7はバングフィルタである。上述した構成の装置に
おいて、溶融炉2で熔融した金属亜鉛1をレトルト炉3
に入れ、外部より約1300〜1400°Cに加熱する
と、レトルト炉3内の亜鉛は沸点(約900°C)に達
し、蒸発口より噴出し、レトルト炉3内の酸素分圧10
0torr以下の雰囲気に保持した酸化室3aで燃焼酸
化する。燃焼酸化して酸化室3a中に得られた高温の酸
化亜鉛は、排風器6の吸引力により吸引されて、冷却ダ
クト4を通過して冷却された後、大部分が捕集タンク5
内にまた一部はバッグフィルタ7内に中央部がほぼ金属
亜鉛相からなる酸化亜鉛として得ることができる。(Example) FIG. 2 is a diagram showing the configuration of an example of an apparatus for implementing the conventionally known method for manufacturing a voltage nonlinear resistor of the present invention. In Fig. 2, 1 is metal zinc as a raw material, 2 is a melting furnace for melting metal zinc 1, 3 is a retort furnace for carrying out an oxidation reaction, 4 is a cooling duct, 5 is a collection tank, and 6 is an exhaust gas. Wind fan 7 is a bang filter. In the apparatus configured as described above, the metal zinc 1 melted in the melting furnace 2 is transferred to the retort furnace 3.
When the zinc in the retort furnace 3 reaches its boiling point (approximately 900°C) and is ejected from the evaporation port, the oxygen partial pressure inside the retort furnace 3 decreases to 10
Combustion oxidation is performed in the oxidation chamber 3a maintained at an atmosphere of 0 torr or less. The high-temperature zinc oxide obtained in the oxidation chamber 3a through combustion oxidation is sucked by the suction force of the exhaust fan 6, passes through the cooling duct 4 and is cooled, and then most of the zinc oxide is transferred to the collection tank 5.
A part of the zinc oxide can be obtained in the bag filter 7 as zinc oxide, the center of which is substantially composed of a metallic zinc phase.
上述したようにして得た酸化亜鉛原料から電圧非直線抵
抗体を得る方法は、以下の通りである。A method for obtaining a voltage nonlinear resistor from the zinc oxide raw material obtained as described above is as follows.
酸化亜鉛を主成分とする電圧非直線抵抗体を得るには、
まず0.1〜3μmの所定の粒度に調整した酸化亜鉛原
料と1μm以下の所定の粒度に調整した微粉の酸化ビス
マス、酸化コバルト、酸化マンガン、酸化アンチモン、
酸化クロム、好ましくは非晶質の酸化ケイ素、酸化ニッ
ケル、酸化ホウ素、酸化銀等よりなる添加物の所定量を
混合する。To obtain a voltage nonlinear resistor whose main component is zinc oxide,
First, zinc oxide raw material adjusted to a predetermined particle size of 0.1 to 3 μm, fine powder bismuth oxide, cobalt oxide, manganese oxide, antimony oxide adjusted to a predetermined particle size of 1 μm or less,
A predetermined amount of an additive consisting of chromium oxide, preferably amorphous silicon oxide, nickel oxide, boron oxide, silver oxide, etc. is mixed.
なお、この場合酸化銀、酸化ホウ素の代わりに硝酸銀、
ホウ酸を用いてもよい。好ましくは銀を含むホウケイ酸
ビスマスガラスを用いるとよい。ここで添加物原料は低
温で焼結するようにできるだけ1all以下、好ましく
は0.5μm以下の微粉を用いるのがよい。この際、こ
れらの原料粉末に対して所定量のポリビニルアルコール
水溶液等を加える。In this case, silver nitrate, silver oxide, and boron oxide are used instead of silver oxide and boron oxide.
Boric acid may also be used. Preferably, bismuth borosilicate glass containing silver is used. Here, as the additive raw material, it is preferable to use fine powder of 1 all or less, preferably 0.5 μm or less so that the material can be sintered at a low temperature. At this time, a predetermined amount of polyvinyl alcohol aqueous solution or the like is added to these raw material powders.
次に好ましくは200 wHg以下の真空度で減圧脱気
を行い混合泥漿を得る。ここに混合泥漿の水分量は30
〜35−t%程度に、またその混合泥漿の粘度は100
±50cpとするのが好ましい。次に得られた混合泥漿
を噴霧乾燥装置に供給して平均粒径50〜150μ糟、
好ましくは80〜120μmで、水分量が0.5〜2.
Owt%、より好ましくは0.9〜1.5賀t%の造粒
粉を造粒する。次に得られた造粒粉を、成形工程におイ
テ、成形圧力800〜7000kg/cm” (7)下
で所定の形状に成形する。成形は通常の圧縮成形、静水
圧成形のほかにホットプレス成形、旧P処理等で行って
もよい。Next, deaeration is performed under reduced pressure, preferably at a vacuum level of 200 wHg or less, to obtain a mixed slurry. Here, the water content of the mixed slurry is 30
~35-t%, and the viscosity of the mixed slurry is 100%.
It is preferable to set it to ±50 cp. Next, the obtained mixed slurry is supplied to a spray drying device to obtain an average particle size of 50 to 150μ,
Preferably, the diameter is 80 to 120 μm and the water content is 0.5 to 2.
Granulated powder of Owt%, more preferably 0.9 to 1.5% is granulated. Next, the obtained granulated powder is subjected to a molding process and molded into a predetermined shape under a molding pressure of 800 to 7000 kg/cm" (7). Molding can be done by ordinary compression molding, isostatic pressing, or by hot pressing. Press molding, old P treatment, etc. may be used.
そして、その成形体の側面に絶縁被覆層を形成する。本
願発明では、BIJ*+ 5l)z(1+ ZnO,5
i02等の所定量に有機結合剤としてエチルセルロース
、ブチルカルピトール、酢酸nブチル等を加えた絶縁被
覆用混合物ペーストを、60〜300μ蒙の厚さに成形
体の側面に塗布する。次に、これを昇降温速度20〜6
0°C/hr、700〜900°C好ましくは700〜
800°C13〜7時間という条件で本焼成する。Then, an insulating coating layer is formed on the side surface of the molded body. In the present invention, BIJ*+5l)z(1+ZnO,5
An insulating coating mixture paste prepared by adding organic binders such as ethyl cellulose, butyl calpitol, n-butyl acetate, etc. to a predetermined amount of i02, etc. is applied to the side surface of the molded body to a thickness of 60 to 300 μm. Next, this temperature increase/decrease rate is 20-6
0°C/hr, 700~900°C preferably 700~
Main firing is performed at 800°C for 13 to 7 hours.
本焼成の条件は、酸素分圧を小さくした状態で焼成を実
施した後に500〜900°Cでアニール処理するか、
または本焼前半は酸素分圧を小さくして後半は大気中で
実施するとさらに好ましい。なお、本焼成の前に成形体
を昇降温速度10〜100°C/hrで300〜500
°C1保持時間1〜10時間で結合剤を飛散除去するこ
とが好ましい。また、ガラス粉末に有機結合剤としてエ
チルセルロース、ブチルカルピトール、酢酸nブチル等
を加えたガラスペーストを前記の絶縁被覆層上に100
〜300μ−の厚さに塗布し、空気中で昇降温速度50
〜200°(: /hr400〜800°C保持時間0
.5〜2時間という条件で熱処理することによりガラス
層を形成すると好ましい。The conditions for the main firing are either firing with a low oxygen partial pressure and then annealing at 500 to 900°C.
Alternatively, it is more preferable to lower the oxygen partial pressure in the first half of the main firing and to carry out the second half in the atmosphere. In addition, before the main firing, the molded body was heated at a heating and cooling rate of 10 to 100°C/hr for 300 to 500°C.
It is preferable to scatter and remove the binder with a holding time of 1 to 10 hours at °C. In addition, a glass paste prepared by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to glass powder was applied to the insulating coating layer at a rate of 100%.
Coated to a thickness of ~300 μ- and heated at a heating/cooling rate of 50 μm in air.
~200° (: /hr400~800°C holding time 0
.. It is preferable to form the glass layer by heat treating for 5 to 2 hours.
その後、得られた電圧非直線抵抗体の両端面をSiC,
Al□03.ダイヤモンド等の#400〜2000相当
の研摩剤により水好ましくは油を研磨液として使用して
研磨する。次に、研磨面を洗浄後、研磨した両端面に例
えばアルミニウム等によって電極を例えば溶射により設
けて電圧非直線抵抗体を得ている。After that, both end faces of the obtained voltage nonlinear resistor were bonded to SiC,
Al□03. Polishing is carried out using an abrasive agent equivalent to #400 to #2000, such as diamond, using water, preferably oil, as the polishing liquid. Next, after cleaning the polished surfaces, electrodes made of aluminum or the like are provided on both polished end surfaces by, for example, thermal spraying to obtain a voltage nonlinear resistor.
以下、実際に本発明の範囲内および範囲外の電圧非直線
抵抗体において、各種特性を測定した結果について説明
する。Hereinafter, the results of actually measuring various characteristics of voltage nonlinear resistors within and outside the scope of the present invention will be described.
裏隻尉土
上述した方法に従って、Bit03. CO:+04.
Mn0z+5bzOs+ CrzO=、 Nip、
Singを各々0.1〜2.0モル%、銀を含むホウケ
イ酸ビスマスガラス0.01〜0.3 wt%、および
残部が第1表に示す酸素分圧の雰囲気中から生成された
ZnOからなる原料から直径47mm、厚さ22.5m
mの形状でバリスタ電圧(Vl、A)が250〜280
V/mn+の第1表に示す本発明試料kl〜5と比較
例試料Nα1〜2の電圧非直線抵抗体を準備した。なお
、抵抗体の焼成は、400°C5時間で脱脂後酸素分圧
1 torrの?h+ ox雰囲気下で800°Cまで
昇温し、さらに大気中で800℃5時間保持後、前記降
温の条件で実施した。According to the method described above, Bit03. CO:+04.
Mn0z+5bzOs+ CrzO=, Nip,
0.1 to 2.0 mol% of Sing, 0.01 to 0.3 wt% of bismuth borosilicate glass containing silver, and the balance of ZnO produced from an atmosphere with an oxygen partial pressure shown in Table 1. Diameter 47mm, thickness 22.5m from the raw material
m shape with varistor voltage (Vl, A) of 250 to 280
Voltage nonlinear resistors of the present invention samples kl~5 and comparative samples Nα1~2 shown in Table 1 of V/mn+ were prepared. The resistor was fired at 400°C for 5 hours at an oxygen partial pressure of 1 torr after degreasing. The temperature was raised to 800° C. in an h+ox atmosphere, and the temperature was further maintained at 800° C. for 5 hours in the air, and then the temperature was lowered.
なお、抵抗体を研摩後SEMで観察し、ZnO粒子の平
均粒径りとZnO粒子中央部の金属亜鉛相の平均粒径d
を求めた結果、d/D=0.3〜0.95となった。In addition, the resistor was observed by SEM after polishing, and the average particle size of the ZnO particles and the average particle size d of the metallic zinc phase at the center of the ZnO particles were determined.
As a result, d/D=0.3 to 0.95.
比較例1の従来法1は、従来法により空気中で亜鉛蒸気
で酸化して得た酸化亜鉛粉末を使用して原料混合物中ニ
AI (NO3)、z ・98zOO,01モル%添加
して焼成によりAIイオンを拡散させた原子価制御法に
よるものを、また比較例2の従来法2は、特開昭58−
122703号公報に開示されたように、従来法により
得た酸化亜鉛粉末を使用してこれとA1.O。Conventional method 1 of Comparative example 1 uses zinc oxide powder obtained by oxidizing with zinc vapor in air according to the conventional method, adds 1 mol% of Ni (NO3), z 98zOO, 0.01% to the raw material mixture, and fires. The method based on the valence control method in which AI ions are diffused by
As disclosed in Japanese Patent No. 122703, using zinc oxide powder obtained by a conventional method, this and A1. O.
を混合後900°Cで仮焼したものを示している。The figure shows the mixture which was calcined at 900°C after mixing.
準備した本発明および比較例の抵抗体に対して、制限電
圧比、VIIIIA低下率、雷サージ耐量および開閉サ
ージ耐量を測定するとともに、漏洩電流の比を求めた。For the prepared resistors of the present invention and comparative examples, the limiting voltage ratio, VIIIA reduction rate, lightning surge withstand capacity, and switching surge withstand capacity were measured, and the leakage current ratio was determined.
結果を第1表に示す。ここで、制限電圧比は、バリスタ
電圧V、。□とVImAの比より求めた。V1mA低下
率は、30KAの電流を8720μsの電流波形で10
回印加した前後のVl、、Aより求めた。雷サージ耐量
は、100KA 、 110KA 、 120KAの電
流を4/10 g sの電流波形で2回繰り返し印加し
た後破壊したものを×、破壊しなかったものをOと表示
した。開閉サージ耐量は800A、900A、 100
OAの電流を2msの電流波形で20回繰り返し印加し
た後破壊したものを×、破壊しなかったものを○と表示
した。さらに、漏洩電流の比は、素子を周囲温度130
“C1課電率95%で課電し、課電直後に対する課電1
00時間後の電流比!10゜時間/■。時間から求めた
。The results are shown in Table 1. Here, the limiting voltage ratio is the varistor voltage V,. It was determined from the ratio of □ and VImA. The V1mA reduction rate is 10% with a current of 30KA and a current waveform of 8720μs.
It was determined from Vl and A before and after the voltage was applied. The lightning surge resistance is indicated by "×" for those that were destroyed after applying currents of 100 KA, 110 KA, and 120 KA twice with a current waveform of 4/10 gs, and as "O" for those that were not destroyed. Opening/closing surge resistance is 800A, 900A, 100A
After repeatedly applying the OA current with a current waveform of 2 ms 20 times, the samples that were destroyed were marked with "×", and those that were not broken were marked with "○". Furthermore, the ratio of leakage current is
“Charging at C1 charging rate of 95%, charging 1 immediately after charging
Current ratio after 00 hours! 10° hours/■. I asked for it from time.
第1表の結果から、所定の雰囲気分圧からなる雰囲気中
での酸化により得た中央部に金属亜鉛相を有する酸化亜
鉛原料を使用した本発明の抵抗体は、比較例に比べて緒
特性が良好なことがわかる。From the results in Table 1, it can be seen that the resistor of the present invention, which uses a zinc oxide raw material having a metallic zinc phase in the center obtained by oxidation in an atmosphere with a predetermined atmospheric partial pressure, has better characteristics than the comparative example. It can be seen that the results are good.
2廉開l
上述した実施例1に従って、酸素分圧100torr以
下のN2+0□雰囲気中で生成された酸化亜鉛を用い、
焼成後Zoo粒子の中央部に金属亜鉛相を有する抵抗体
における、金属亜鉛相の直径の大きさの変化による影響
を調べるため、第1図におけるd/Dの値を変化させた
抵抗体を作製し、実施例1と同様各種特性を測定した。2. In accordance with Example 1 described above, using zinc oxide produced in an N2+0□ atmosphere with an oxygen partial pressure of 100 torr or less,
In order to investigate the effect of changes in the diameter of the metal zinc phase on a resistor that has a metal zinc phase in the center of the Zoo particles after firing, resistors were fabricated with the d/D value changed in Figure 1. Then, various characteristics were measured in the same manner as in Example 1.
なお、抵抗体の焼成も実施例1と同様に実施した。結果
を第2表に示す。Note that the resistor was fired in the same manner as in Example 1. The results are shown in Table 2.
=4−
第2表の結果から、本発明の方法に従えばいずれも良好
な特性の電圧非直線抵抗体を得ることができるが、その
中でもd/D=0.30〜0.95のものが良好である
ことがわかった。また、d/Dの値は0.95を越える
と電圧非直線抵抗体の電圧非直線性が実用に耐えないほ
ど小さくなることがわかった。=4- From the results in Table 2, it is clear that any voltage nonlinear resistor with good characteristics can be obtained by following the method of the present invention, but among them, those with d/D = 0.30 to 0.95 can be obtained. was found to be good. Further, it has been found that when the value of d/D exceeds 0.95, the voltage nonlinearity of the voltage nonlinear resistor becomes so small as to be impractical.
(発明の効果)
以上の説明から明らかなように、本発明の電圧非直線抵
抗体およびその製造方法によれば、亜鉛蒸気を酸素分圧
100torr以下の雰囲気で酸化させることにより中
央部に金属亜鉛相の存在するZnO粒子を使用して電圧
非直線抵抗体を製造することにより、大電流域における
電圧非直線性を改善できるとともに、課電寿命およびサ
ージ耐量も良好な電圧非直線抵抗体を得ることができる
。(Effects of the Invention) As is clear from the above description, according to the voltage nonlinear resistor and the manufacturing method thereof of the present invention, metal zinc is formed in the center by oxidizing zinc vapor in an atmosphere with an oxygen partial pressure of 100 torr or less. By manufacturing a voltage nonlinear resistor using ZnO particles in which a phase exists, voltage nonlinearity in a large current range can be improved, and a voltage nonlinear resistor with good charging life and surge resistance can be obtained. be able to.
第1図は本発明の電圧非直線抵抗体のZnO粒子の一例
を示す断面図、
第2図は本発明の電圧非直線抵抗体の製造方法を実施す
る装置の一例の構成を示す図である。
1・・・金属亜鉛 2・・・溶融炉3・・・レト
ルト類 3a・・・酸化室4・・・冷却ダクト
5・・・捕集タンク6・・・排風器 7・・
・バッグフィルタ特
許
出
願
人
日
本
碍
子
株
式FIG. 1 is a cross-sectional view showing an example of ZnO particles of a voltage non-linear resistor of the present invention, and FIG. 2 is a diagram showing the configuration of an example of an apparatus for carrying out the method of manufacturing a voltage non-linear resistor of the present invention. . 1...Metal zinc 2...Melting furnace 3...Retorts 3a...Oxidation chamber 4...Cooling duct
5... Collection tank 6... Ventilator 7...
・Bag filter patent applicant Nippon Insulator Co., Ltd.
Claims (2)
において、焼結体中の酸化亜鉛粒子の中央部に金属亜鉛
相を含有することを特徴とする電圧非直線抵抗体。1. A voltage nonlinear resistor characterized in that the sintered body contains zinc oxide as a main component and has voltage nonlinearity, and contains a metallic zinc phase in the center of zinc oxide particles in the sintered body.
を主成分とする電圧非直線抵抗体の製造方法において、
酸化亜鉛原料として亜鉛蒸気を酸素分圧100torr
以下の雰囲気で酸化して得たものを使用することを特徴
とする電圧非直線抵抗体の製造方法。2. In a method for manufacturing a voltage nonlinear resistor whose main component is zinc oxide, which is manufactured by an indirect method of oxidizing zinc vapor,
Zinc vapor is used as a zinc oxide raw material at an oxygen partial pressure of 100 torr.
A method for manufacturing a voltage nonlinear resistor, characterized by using a resistor obtained by oxidation in the following atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63287517A JPH07109803B2 (en) | 1988-11-16 | 1988-11-16 | Voltage nonlinear resistor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63287517A JPH07109803B2 (en) | 1988-11-16 | 1988-11-16 | Voltage nonlinear resistor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02134801A true JPH02134801A (en) | 1990-05-23 |
| JPH07109803B2 JPH07109803B2 (en) | 1995-11-22 |
Family
ID=17718367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63287517A Expired - Lifetime JPH07109803B2 (en) | 1988-11-16 | 1988-11-16 | Voltage nonlinear resistor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07109803B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6860334B2 (en) | 2003-01-16 | 2005-03-01 | Honda Giken Kogyo Kabushiki Kaisha | Walk-behind tiller |
-
1988
- 1988-11-16 JP JP63287517A patent/JPH07109803B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6860334B2 (en) | 2003-01-16 | 2005-03-01 | Honda Giken Kogyo Kabushiki Kaisha | Walk-behind tiller |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07109803B2 (en) | 1995-11-22 |
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