JPH0213761B2 - - Google Patents
Info
- Publication number
- JPH0213761B2 JPH0213761B2 JP57127404A JP12740482A JPH0213761B2 JP H0213761 B2 JPH0213761 B2 JP H0213761B2 JP 57127404 A JP57127404 A JP 57127404A JP 12740482 A JP12740482 A JP 12740482A JP H0213761 B2 JPH0213761 B2 JP H0213761B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- refractive index
- optical thickness
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Surface Treatment Of Optical Elements (AREA)
Description
【発明の詳細な説明】
本発明は、赤外線領域の光学部材として用いら
れるゲルマニユウム基板の赤外反射防止膜に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an infrared antireflection coating for a germanium substrate used as an optical member in the infrared region.
従来の色消し反射防止膜の構成の例としては、
基板側から数えて第１層ないし第３層をn1，n2，
n3、空気及び基板の屈折率をnp，nsとするとき、
n1n3＝n2 2＝npns
を満たす屈折率の物質をλ／４の厚さで蒸着する
ものが知られている。 An example of the structure of a conventional achromatic antireflection film is:
Counting from the substrate side, the first to third layers are n 1 , n 2 ,
When n 3 , the refractive index of air and the substrate are n p , n s , a substance with a refractive index satisfying n 1 n 3 = n 2 2 = n p n s is deposited to a thickness of λ/4. Are known.
従来の赤外線反射防止膜の例としては、米国特
許第3468594号に記載された三層反射防止膜が知
られており、これは基板側から数えて第１層がSi
膜、第２層がZnS、第３層がBaF2の各膜からな
るものである。ところで、この第１層のSiは活性
があるため、蒸着の際の蒸発源に電子銃を使用す
る必要があり、一方一定の生産能率を上げるため
に蒸着速度をある程度高くする必要がある。しか
し、蒸着速度を上げるために電子銃の出力を大き
くするとSiが不均一に加熱され、気体でないSiが
飛散して基板に付着するため、蒸着膜の品質の低
下あるいは生産能率を向上させることができない
等の問題を有する。 As an example of a conventional infrared antireflection coating, a three-layer antireflection coating described in U.S. Pat. No. 3,468,594 is known, in which the first layer counted from the substrate side is Si.
The second layer is made of ZnS and the third layer is made of BaF 2 . By the way, since this first layer of Si is active, it is necessary to use an electron gun as an evaporation source during vapor deposition, and on the other hand, it is necessary to increase the vapor deposition rate to some extent in order to increase a certain production efficiency. However, when increasing the output of the electron gun to increase the deposition rate, Si is heated unevenly and non-gaseous Si scatters and adheres to the substrate, resulting in a decrease in the quality of the deposited film or an increase in production efficiency. There are problems such as not being able to do it.
本発明は、上記従来の問題を鑑みなされたもの
であつて、赤外反射防止の効果が優れており、高
速の蒸着が可能で、かつ容易に高品質の蒸着膜を
得ることができる赤外反射防止膜を提供すること
を目的とする。 The present invention has been made in view of the above-mentioned conventional problems, and is an infrared ray that has an excellent effect of preventing infrared reflection, enables high-speed vapor deposition, and easily obtains a high-quality vapor-deposited film. The purpose is to provide an anti-reflection film.
本発明は、上記目的を達成するために以下の構
成上の特徴を有する。すなわち、ゲルマニユウム
基板の多層反射防止膜において、基板側から数え
て第一層に中間屈折率のZnS膜またはZnSe膜、
第二層に高屈折率のGe膜、第三層に上記中間屈
折率の膜、第四層に低屈折率のBaF2，LaF2，
MgF2，CaF2およびSrF2のうちのいずれかの膜
からなることである。また、本発明の好ましい実
施態様は、上記第一層ないし第四層の各厚さを
d1，d2，d3，d4各屈折率をn1，n2，n3，n4とする
とき、
n1d1：n2d2：n3d3：n4d4
＝１：２：5.4：4.4
である。 The present invention has the following structural features to achieve the above object. That is, in a multilayer antireflection coating on a germanium substrate, the first layer counting from the substrate side is a ZnS film or a ZnSe film with an intermediate refractive index;
The second layer is a Ge film with a high refractive index, the third layer is a film with an intermediate refractive index, and the fourth layer is a low refractive index BaF 2 , LaF 2 ,
It consists of a film of one of MgF 2 , CaF 2 and SrF 2 . Further, in a preferred embodiment of the present invention, the thickness of each of the first to fourth layers is
When the refractive index of d 1 , d 2 , d 3 , d 4 is n 1 , n 2 , n 3 , n 4 , n 1 d 1 : n 2 d 2 : n 3 d 3 : n 4 d 4 = The ratio is 1:2:5.4:4.4.
以下、本発明の実施例を説明する。第１実施例
は、
基 板 Ge
第１層 ZnS 光学膜厚 0.45μm
第２層 Ge 光学膜厚 0.90μm
第３層 ZnS 光学膜厚 2.45μm
第４層 BaF2 光学膜厚 2.00μm
である。この分光特性は、計算値が第１図に示さ
れ、実験値が第２図に示されるように、6μmから
14μmについて高透過率を得ることができる。な
お、第１図ないし第４図は、縦軸が波長（単位：
μm）、横軸が透過率（単位：％）である。 Examples of the present invention will be described below. In the first example, the substrate Ge, first layer ZnS, optical thickness 0.45 μm, second layer Ge, optical thickness 0.90 μm, third layer ZnS, optical thickness 2.45 μm, and fourth layer BaF 2, optical thickness 2.00 μm. This spectral characteristic is calculated from 6 μm as shown in Figure 1 and experimental value shown in Figure 2.
High transmittance can be obtained for 14 μm. In Figures 1 to 4, the vertical axis represents wavelength (unit:
μm), and the horizontal axis is the transmittance (unit: %).
第２実施例は、
基 板 Ge
第１層 ZnSe 光学膜厚 0.45μm
第２層 Ge 光学膜厚 0.9 μm
第３層 ZnSe 光学膜厚 2.45μm
第４層 BaF2 光学膜厚 2.0 μm
である。この分光特性の計算値は、第３図に示さ
れるように、6μmから14μmについて高透過率を
得ることができる。 In the second example, substrate Ge, first layer ZnSe, optical thickness 0.45 μm, second layer Ge, optical thickness 0.9 μm, third layer ZnSe, optical thickness 2.45 μm, and fourth layer BaF 2, optical thickness 2.0 μm. As shown in FIG. 3, the calculated value of this spectral characteristic makes it possible to obtain high transmittance from 6 μm to 14 μm.
第３実施例は、
基 板 Ge
第１層 ZnS 光学膜厚 0.3μm
第２層 Ge 光学膜厚 0.6μm
第３層 ZnS 光学膜厚 1.7μm
第４層 MgF2 光学膜厚 1.4μm
である。この分光特性の計算値は、第４図に示さ
れるように、4μmから10μmについて高透過率を
得ることができる。 In the third example, substrate Ge, first layer ZnS optical thickness 0.3 μm, second layer Ge optical thickness 0.6 μm, third layer ZnS optical thickness 1.7 μm, fourth layer MgF 2 optical thickness 1.4 μm. As shown in FIG. 4, the calculated value of this spectral characteristic makes it possible to obtain high transmittance from 4 μm to 10 μm.
第１図は本発明の第１実施例の計算による分光
特性を示すグラフ、第２図は第１実施例の実験値
の分光特性を示すグラフ、第３図は第２実施例の
計算による分光特性を示すグラフ、第４図は第３
実施例の計算による分光特性を示すグラフであ
る。
FIG. 1 is a graph showing the spectral characteristics calculated in the first embodiment of the present invention, FIG. 2 is a graph showing the spectral characteristics of experimental values in the first embodiment, and FIG. 3 is the spectral characteristics calculated in the second embodiment. Graph showing the characteristics, Figure 4 is the 3rd
It is a graph showing spectral characteristics calculated in an example.
Claims (1)
て、基板側から数えて第一層に中間屈折率のZnS
膜またはZnSe膜、第二層に高屈折率のGe膜、第
三層に上記中間屈折率の膜、第四層に低屈折率の
BaF2，LaF2，MgF2，CaF2およびSrF2のうちの
いずれかの膜からなることを特徴とする赤外反射
防止膜。 ２ 上記第一層ないし第四層の各厚さをd1，d2，
d3，d4、各屈折率をn1，n2，n3，n4とするとき、 n1d1：n2d2：n3d3：n4d4＝１：２：5.4：4.4で
ある特許請求の範囲第１項記載の赤外反射防止
膜。[Claims] 1. In a multilayer antireflection coating on a germanium substrate, the first layer counting from the substrate side includes ZnS with an intermediate refractive index.
film or ZnSe film, the second layer is a high refractive index Ge film, the third layer is a film with the above-mentioned intermediate refractive index, and the fourth layer is a low refractive index film.
An infrared antireflection film comprising any one of BaF 2 , LaF 2 , MgF 2 , CaF 2 and SrF 2 . 2 The thickness of each of the first to fourth layers is d 1 , d 2 ,
When d 3 , d 4 and each refractive index are n 1 , n 2 , n 3 , n 4 , n 1 d 1 :n 2 d 2 :n 3 d 3 :n 4 d 4 =1:2:5.4 :4.4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57127404A JPS5917503A (en) | 1982-07-21 | 1982-07-21 | Infrared anti-reflection coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57127404A JPS5917503A (en) | 1982-07-21 | 1982-07-21 | Infrared anti-reflection coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5917503A JPS5917503A (en) | 1984-01-28 |
| JPH0213761B2 true JPH0213761B2 (en) | 1990-04-05 |
Family
ID=14959146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57127404A Granted JPS5917503A (en) | 1982-07-21 | 1982-07-21 | Infrared anti-reflection coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5917503A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9575216B2 (en) | 2011-05-24 | 2017-02-21 | National Institute Of Advanced Industrial Science And Technology | Infrared-transmitting film, method for producing infrared-transmitting film, infrared optical component, and infrared device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6381401A (en) * | 1986-09-26 | 1988-04-12 | Horiba Ltd | Optical components for high output CO↓2 laser beam |
-
1982
- 1982-07-21 JP JP57127404A patent/JPS5917503A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9575216B2 (en) | 2011-05-24 | 2017-02-21 | National Institute Of Advanced Industrial Science And Technology | Infrared-transmitting film, method for producing infrared-transmitting film, infrared optical component, and infrared device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5917503A (en) | 1984-01-28 |
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