JPH0213833B2 - - Google Patents
Info
- Publication number
- JPH0213833B2 JPH0213833B2 JP56134413A JP13441381A JPH0213833B2 JP H0213833 B2 JPH0213833 B2 JP H0213833B2 JP 56134413 A JP56134413 A JP 56134413A JP 13441381 A JP13441381 A JP 13441381A JP H0213833 B2 JPH0213833 B2 JP H0213833B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric thin
- mask
- electrode layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
この発明はマスク蒸着あるいはマスクスパツタ
リングにより形成する圧電薄膜形電気―機械的変
位変換素子の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a piezoelectric thin film electro-mechanical displacement transducer formed by mask vapor deposition or mask sputtering.
従来、圧電薄膜形電気―機械的変位変換素子
は、特開昭57―115887号に示されているように、
半導体基体の表面にスパツタリングあるいは蒸着
とフオトリゾグラフイおよびエツチング工程の繰
り返しによりバイモルフ構造を形成したのち、上
記半導体基体にエツチングを施して、上記バイモ
ルフ構造を片持梁状に支持させることを特徴とし
ていた。このため、圧電薄膜層あるいは電極層の
形成毎に、フオトリゾグラフイとエツチング工程
とが必要になり、工程が複雑になると同時に、製
造に長時間を要するという欠点があつた。 Conventionally, piezoelectric thin film electro-mechanical displacement transducers have
A bimorph structure is formed on the surface of a semiconductor substrate by repeating sputtering or vapor deposition, photolithography, and etching steps, and then the semiconductor substrate is etched to support the bimorph structure in a cantilever shape. there was. For this reason, photolithography and etching steps are required each time a piezoelectric thin film layer or an electrode layer is formed, which has the drawback of complicating the process and requiring a long time for manufacturing.
この発明は上記欠点を解消するためになされた
もので、半導体基体の表面に絶縁層からなる片持
梁を形成し、ついでその上にバイモルフ構造をマ
スク蒸着あるいはマスクスパツタリングにより形
成することにより、フオトリゾグラフイおよびエ
ツチング工程を経ずして圧電薄膜形電気―機械的
変位変換素子を製造できる方法を提供することを
目的としている。 This invention was made in order to solve the above-mentioned drawbacks, and is made by forming a cantilever made of an insulating layer on the surface of a semiconductor substrate, and then forming a bimorph structure thereon by mask vapor deposition or mask sputtering. It is an object of the present invention to provide a method for manufacturing a piezoelectric thin film type electro-mechanical displacement transducer element without going through photolithography and etching steps.
以下、この発明の実施例を図面にもとづいて説
明する。 Embodiments of the present invention will be described below based on the drawings.
第１図はこの発明の一実施例にかかる圧電薄膜
形電気―機械的変位変換素子の斜視図を、第２図
はその縦断側面図を示す。この素子の製造法とし
て、まずシリコンなどの半導体基体１１の表面に
熱酸化またはCVD法などにより二酸化シリコン
（SiO2）からなる絶縁層１２を形成したのち、フ
オトリゾグラフイおよびエツチング工程により上
記絶縁層１２を部分的にコ字形に開口するととも
に、その開口部１３からピロカテコールなどの異
方性エツチング液により、半導体基体１１にエツ
チングを施し、孔１４を形成することにより、二
酸化シリコンの片持梁１５を形成する。ついで、
マスク蒸着あるいはマスクスパツタリングにより
下部電極層１６、圧電薄膜層１７、上記電極層１
８を順次積層状に形成する。通常、マスク蒸着な
どを行なう場合、まわりこみなどの影響のため、
微細パターンを形成することは困難である。しか
し、この発明においては、半導体基体１１の孔１
４の上に二酸化シリコンの片持梁１５が突き出し
た状態にあるため、蒸着過程において余計な部分
はその孔１４に落下し、二酸化シリコンの片持梁
１５上に堆積した部分のみが下部電極層１６、圧
電薄膜層１７、上部電極層１８を形成することと
なり、マスタによるパターニングを必要としな
い。すなわち、第３図ａは下部電極層形成用マス
ク１９の平面図を、第３図ｂは圧電薄膜層形成用
マスク２０の平面図を、また第３図Ｃは上部電極
層形成用マスク２１の平面図を示すが、それぞれ
のマスク孔１９ａ，２０ａ，２１ａには片持梁１
５の形状をパターニングする必要はない。また、
マスキングは下部電極層１６の圧電薄膜層１７を
介しての上部電極層１８との分離および外部への
結線のための領域２２を確保するためだけに行な
えばよい。上記マスク１９，２０，２１を用いて
下部電極層１６、圧電薄膜層１７、上部電極層１
８を形成したのちは、必要に応じて圧電薄膜層１
７のボーリングを施す。なお上記圧電薄膜層１７
の材料にはBaTiO3（チタン酸バリユーム）、ZnO
（酸化亜鉛）、PZT（チタン酸―ジルコン酸―鉛）
などが用いられ、また電極層１６，１８の材料に
は主としてPt（白金）が用いられる。 FIG. 1 is a perspective view of a piezoelectric thin film type electro-mechanical displacement conversion element according to an embodiment of the present invention, and FIG. 2 is a longitudinal sectional side view thereof. The method for manufacturing this device is to first form an insulating layer 12 made of silicon dioxide (SiO 2 ) on the surface of a semiconductor substrate 11 made of silicon or the like by thermal oxidation or CVD, and then remove the insulating layer 12 by photolithography and etching steps. The layer 12 is partially opened in a U-shape, and the semiconductor substrate 11 is etched from the opening 13 using an anisotropic etching solution such as pyrocatechol to form a hole 14, thereby allowing the silicon dioxide to be cantilevered. A beam 15 is formed. Then,
The lower electrode layer 16, the piezoelectric thin film layer 17, and the electrode layer 1 are formed by mask vapor deposition or mask sputtering.
8 are sequentially formed in a laminated manner. Normally, when performing mask evaporation, etc., due to effects such as wraparound,
It is difficult to form fine patterns. However, in this invention, the hole 1 of the semiconductor substrate 11
Since the cantilever beam 15 of silicon dioxide protrudes above the hole 14, the excess portion falls into the hole 14 during the deposition process, and only the portion deposited on the cantilever beam 15 of silicon dioxide forms the lower electrode layer. 16, the piezoelectric thin film layer 17 and the upper electrode layer 18 are formed, and patterning by a master is not required. That is, FIG. 3a is a plan view of the mask 19 for forming the lower electrode layer, FIG. 3b is a plan view of the mask 20 for forming the piezoelectric thin film layer, and FIG. 3C is a plan view of the mask 21 for forming the upper electrode layer. Although the plan view is shown, each mask hole 19a, 20a, 21a has a cantilever beam 1.
It is not necessary to pattern the shape of 5. Also,
Masking may be performed only to separate the lower electrode layer 16 from the upper electrode layer 18 via the piezoelectric thin film layer 17 and to secure a region 22 for connection to the outside. Using the masks 19, 20, 21, the lower electrode layer 16, the piezoelectric thin film layer 17, and the upper electrode layer 1 are prepared.
After forming the piezoelectric thin film layer 1, if necessary.
Perform 7 bowling. Note that the piezoelectric thin film layer 17
The materials include BaTiO 3 (barium titanate), ZnO
(zinc oxide), PZT (titanate-zirconate-lead)
Pt (platinum) is mainly used as the material for the electrode layers 16 and 18.
上記のように製造された圧電薄膜形電気―機械
的変位変換素子においては、片持梁１５とその上
の圧電薄膜層１７とこの圧電薄膜層１７の両面の
電極層１６，１８とにより片持梁状の素子ブロツ
ク２３が形成され、かつ上記電極層１６，１８に
より圧電薄膜層１７に電界が加えられることによ
り、素子ブロツク２３の先端部が下方へ変位し、
所定の電気―機械的変位変換作用が行なわれる。 In the piezoelectric thin film electro-mechanical displacement transducer manufactured as described above, the cantilever beam 15, the piezoelectric thin film layer 17 thereon, and the electrode layers 16 and 18 on both sides of the piezoelectric thin film layer 17 can be used. By forming a beam-shaped element block 23 and applying an electric field to the piezoelectric thin film layer 17 by the electrode layers 16 and 18, the tip of the element block 23 is displaced downward,
A predetermined electro-mechanical displacement conversion action is performed.
なお上記実施例によれば、上部電極層１８の蒸
着時のまわりこみにより、片持梁１５の側面での
上部電極層１８と下部電極層１６との短絡が心配
されるが、蒸着時の立体角、電極層の膜厚を適当
に選べば、1.25×107v／ｍ程度の高電界にも充分
耐え得るものである。また、二酸化シリコンから
なる片持梁１５は素子ブロツク２３の動作原理
上、圧電薄膜層１７に比較して、同等あるいはそ
れ以下の厚さである必要があるが、支持体として
の機能は充分もちあわせている。 According to the above embodiment, there is a concern that the upper electrode layer 18 and the lower electrode layer 16 may be short-circuited on the side surface of the cantilever beam 15 due to wrapping around the upper electrode layer 18 during vapor deposition. If the thickness of the electrode layer is selected appropriately, it can withstand a high electric field of about 1.25×10 7 v/m. Further, the cantilever beam 15 made of silicon dioxide must have a thickness equal to or less than that of the piezoelectric thin film layer 17 due to the operating principle of the element block 23, but it has a sufficient function as a support. It's matching.
以上の説明からわかるように、この発明によれ
ば、通常、マスク蒸着などでは困難な微細領域に
圧電薄膜層および電極層を容易に形成できるの
で、フオトリゾグラフイやエツチング工程を省略
して、工程を非常に短縮すると同時に、圧電薄膜
層をウエツト工程にさらす必要がなく、クリーン
な状態に保ちやすいという圧電薄膜形電気―機械
的変位変換素子の製造方法を提供することができ
る。 As can be seen from the above description, according to the present invention, piezoelectric thin film layers and electrode layers can be easily formed in minute areas that are normally difficult to form using mask evaporation. It is possible to provide a method of manufacturing a piezoelectric thin film type electro-mechanical displacement transducer that greatly shortens the process, does not require exposing the piezoelectric thin film layer to a wet process, and can be easily kept in a clean state.
第１図はこの発明の一実施例にかかる圧電薄膜
形電気―機械的変位変換素子の斜視図、第２図は
同素子の縦断側面図、第３図ａは下部電極層形成
用マスクの平面図、第３図ｂは圧電薄膜層形成用
マスクの平面図、第３図ｃは上部電極層形成用マ
スクの平面図である。
１１…半導体基体、１２…絶縁層、１３…開口
部、１４…孔、１５…片持梁、１６…下部電極
層、１７…圧電薄膜層、１８…上部電極層、１
９，２０，２１…マスク。
FIG. 1 is a perspective view of a piezoelectric thin film type electro-mechanical displacement conversion element according to an embodiment of the present invention, FIG. 2 is a longitudinal cross-sectional side view of the element, and FIG. 3a is a plan view of a mask for forming a lower electrode layer. 3B is a plan view of a mask for forming a piezoelectric thin film layer, and FIG. 3C is a plan view of a mask for forming an upper electrode layer. DESCRIPTION OF SYMBOLS 11... Semiconductor base, 12... Insulating layer, 13... Opening, 14... Hole, 15... Cantilever, 16... Lower electrode layer, 17... Piezoelectric thin film layer, 18... Upper electrode layer, 1
9, 20, 21...Mask.
Claims (1)
に開口するとともに、その開口部から上記半導体
基体に孔を設けることにより、この孔の上に上記
絶縁層の片持梁を形成し、しかるのち、この片持
梁の表面に圧電薄膜層およびその両面の電極層を
マスク蒸着あるいはマスクスパツタリングにより
形成することを特徴とする圧電薄膜形電気―機械
的変位変換素子の製造方法。1. By partially opening the insulating layer formed on the surface of the semiconductor substrate and providing a hole in the semiconductor substrate from the opening, a cantilever of the insulating layer is formed above the hole, and then A method for producing a piezoelectric thin film electro-mechanical displacement transducer, which comprises forming a piezoelectric thin film layer and electrode layers on both sides of the cantilever beam by mask vapor deposition or mask sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56134413A JPS5834981A (en) | 1981-08-26 | 1981-08-26 | Manufacture of piezoelectric thin film type electric- mechanical displacement transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56134413A JPS5834981A (en) | 1981-08-26 | 1981-08-26 | Manufacture of piezoelectric thin film type electric- mechanical displacement transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5834981A JPS5834981A (en) | 1983-03-01 |
| JPH0213833B2 true JPH0213833B2 (en) | 1990-04-05 |
Family
ID=15127797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56134413A Granted JPS5834981A (en) | 1981-08-26 | 1981-08-26 | Manufacture of piezoelectric thin film type electric- mechanical displacement transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5834981A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60137462U (en) * | 1984-02-23 | 1985-09-11 | ティーディーケイ株式会社 | actuator element |
| US6408496B1 (en) * | 1997-07-09 | 2002-06-25 | Ronald S. Maynard | Method of manufacturing a vibrational transducer |
| WO2011027879A1 (en) * | 2009-09-07 | 2011-03-10 | 日本碍子株式会社 | Method for manufacturing piezoelectric/electrostrictive film type element |
-
1981
- 1981-08-26 JP JP56134413A patent/JPS5834981A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5834981A (en) | 1983-03-01 |
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