JPH02138420U - - Google Patents
Info
- Publication number
- JPH02138420U JPH02138420U JP4758189U JP4758189U JPH02138420U JP H02138420 U JPH02138420 U JP H02138420U JP 4758189 U JP4758189 U JP 4758189U JP 4758189 U JP4758189 U JP 4758189U JP H02138420 U JPH02138420 U JP H02138420U
- Authority
- JP
- Japan
- Prior art keywords
- transfer chamber
- gate valve
- vapor phase
- phase growth
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000000638 solvent extraction Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 description 1
Description
第１図ａ図はこの考案による半導体気相成長装
置の構成を示す説明図、同ｂ，ｃ図はａ図におけ
る搬送室と反応室間のゲートバルブ部を示す詳細
説明図である。第２図はＮ２ガス流速とウエーハ
内単位面積当たりの欠陥数との関係を示すグラフ
である。
１……カセツト室、２……搬送室、３……反応
室、４……ウエーハカセツト、５……ウエーハ自
動搬送ロボツト、６……ゲートバルブ、７……サ
セプタ、１０……Ｎ２ガス・インジエクタ、１１
……ノズル。
FIG. 1A is an explanatory view showing the structure of a semiconductor vapor phase growth apparatus according to this invention, and FIGS. 1B and 1C are detailed explanatory views showing the gate valve section between the transfer chamber and the reaction chamber in FIG. 1A. FIG. 2 is a graph showing the relationship between the N 2 gas flow rate and the number of defects per unit area within the wafer. 1...Cassette chamber, 2...Transfer chamber, 3...Reaction chamber, 4...Wafer cassette, 5...Wafer automatic transfer robot, 6...Gate valve, 7...Susceptor, 10... N2 gas Injector, 11
……nozzle.
Claims (1)
させる機構と前記搬送室と反応室の間に相互のガ
スが混入しないように仕切るためのゲートバルブ
を有する半導体気相成長装置において、前記ゲー
トバルブの上部近傍、且つ搬送室側に複数の不活
性ガスインジエクタを設けたことを特徴とする半
導体気相成長装置。 In a semiconductor vapor phase growth apparatus having a mechanism for automatically moving a semiconductor substrate from a transfer chamber to a reaction chamber, and a gate valve for partitioning the transfer chamber and the reaction chamber to prevent mutual gas from mixing, the gate valve A semiconductor vapor phase growth apparatus characterized in that a plurality of inert gas injectors are provided near the upper part of the apparatus and on the transfer chamber side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4758189U JPH02138420U (en) | 1989-04-21 | 1989-04-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4758189U JPH02138420U (en) | 1989-04-21 | 1989-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02138420U true JPH02138420U (en) | 1990-11-19 |
Family
ID=31563634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4758189U Pending JPH02138420U (en) | 1989-04-21 | 1989-04-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02138420U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216710A (en) * | 2005-02-02 | 2006-08-17 | Hitachi High-Technologies Corp | Semiconductor manufacturing equipment |
| JP2016535940A (en) * | 2013-09-30 | 2016-11-17 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Transfer chamber gas purge apparatus, electronic device processing system, and purge method. |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6247118B2 (en) * | 1982-05-12 | 1987-10-06 | Kobe Steel Ltd |
-
1989
- 1989-04-21 JP JP4758189U patent/JPH02138420U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6247118B2 (en) * | 1982-05-12 | 1987-10-06 | Kobe Steel Ltd |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216710A (en) * | 2005-02-02 | 2006-08-17 | Hitachi High-Technologies Corp | Semiconductor manufacturing equipment |
| JP2016535940A (en) * | 2013-09-30 | 2016-11-17 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Transfer chamber gas purge apparatus, electronic device processing system, and purge method. |
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