JPH02140863U - - Google Patents

Info

Publication number: JPH02140863U
Authority: JP; Japan
Prior art keywords: layer; substrate; groove; stepped; side wall
Prior art date: 1989-04-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP1989049014U

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-04-26

Filing date

1989-04-26

Publication date

1990-11-26

1989-04-26 Application filed filed Critical

1989-04-26 Priority to JP1989049014U priority Critical patent/JPH02140863U/ja

1990-11-26 Publication of JPH02140863U publication Critical patent/JPH02140863U/ja

Status Pending legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 4
239000004065 semiconductor Substances 0.000 claims description 3
239000010409 thin film Substances 0.000 claims description 3
229910021417 amorphous silicon Inorganic materials 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 1
238000000034 method Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

Landscapes

Thin Film Transistor (AREA)

JP1989049014U 1989-04-26 1989-04-26 Pending JPH02140863U (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP1989049014U JPH02140863U (fr)	1989-04-26	1989-04-26

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP1989049014U JPH02140863U (fr)	1989-04-26	1989-04-26

Publications (1)

Publication Number	Publication Date
JPH02140863U true JPH02140863U (fr)	1990-11-26

Family

ID=31566338

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP1989049014U Pending JPH02140863U (fr)	1989-04-26	1989-04-26

Country Status (1)

Country	Link
JP (1)	JPH02140863U (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2011106337A1 (fr) *	2010-02-26	2011-09-01	Eastman Kodak Company	Procédé de fabrication de transistor comprenant un profil rentrant
WO2011106165A1 (fr) *	2010-02-26	2011-09-01	Eastman Kodak Company	Transistor vertical comprenant un profil rentrant
WO2012094109A1 (fr) *	2011-01-07	2012-07-12	Eastman Kodak Company	Transistor à longueur de canal réduite
WO2012094353A1 (fr) *	2011-01-07	2012-07-12	Eastman Kodak Company	Transistor incluant un profil rentrant multicouche
WO2012094357A3 (fr) *	2011-01-07	2012-09-07	Eastman Kodak Company	Transistor incluant des profils rentrant multiples
WO2013126261A1 (fr) *	2012-02-22	2013-08-29	Eastman Kodak Company	Circuit comportant des transistors verticaux
WO2014204884A1 (fr) *	2013-06-19	2014-12-24	Eastman Kodak Company	Transistor à quatre bornes
WO2015134082A1 (fr) *	2014-03-06	2015-09-11	Eastman Kodak Company	Vtft à noyau polymère
WO2016200626A1 (fr) *	2015-06-12	2016-12-15	Eastman Kodak Company	Transistors à couches minces verticaux et planaires sur un substrat commun
EP3657550A3 (fr) *	2018-11-20	2020-08-12	LG Display Co., Ltd.	Transistor à structure verticale et dispositif électrique le comprenant

1989
- 1989-04-26 JP JP1989049014U patent/JPH02140863U/ja active Pending

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US9337828B2 (en)	2010-02-26	2016-05-10	Eastman Kodak Company	Transistor including reentrant profile
WO2011106165A1 (fr) *	2010-02-26	2011-09-01	Eastman Kodak Company	Transistor vertical comprenant un profil rentrant
CN102782821A (zh) *	2010-02-26	2012-11-14	伊斯曼柯达公司	包括凹进轮廓的垂直晶体管
JP2013520844A (ja) *	2010-02-26	2013-06-06	イーストマンコダックカンパニー	内側にへこんだ形状を含んだトランジスタを製造する方法
JP2013520839A (ja) *	2010-02-26	2013-06-06	イーストマンコダックカンパニー	内側にへこんだ形状を含んだ縦型トランジスタ
WO2011106337A1 (fr) *	2010-02-26	2011-09-01	Eastman Kodak Company	Procédé de fabrication de transistor comprenant un profil rentrant
US8803203B2 (en)	2010-02-26	2014-08-12	Eastman Kodak Company	Transistor including reentrant profile
WO2012094109A1 (fr) *	2011-01-07	2012-07-12	Eastman Kodak Company	Transistor à longueur de canal réduite
WO2012094353A1 (fr) *	2011-01-07	2012-07-12	Eastman Kodak Company	Transistor incluant un profil rentrant multicouche
WO2012094357A3 (fr) *	2011-01-07	2012-09-07	Eastman Kodak Company	Transistor incluant des profils rentrant multiples
CN103314445A (zh) *	2011-01-07	2013-09-18	柯达公司	包含多重凹入外形的晶体管
WO2013126261A1 (fr) *	2012-02-22	2013-08-29	Eastman Kodak Company	Circuit comportant des transistors verticaux
WO2014204884A1 (fr) *	2013-06-19	2014-12-24	Eastman Kodak Company	Transistor à quatre bornes
WO2015134082A1 (fr) *	2014-03-06	2015-09-11	Eastman Kodak Company	Vtft à noyau polymère
WO2016200626A1 (fr) *	2015-06-12	2016-12-15	Eastman Kodak Company	Transistors à couches minces verticaux et planaires sur un substrat commun
EP3657550A3 (fr) *	2018-11-20	2020-08-12	LG Display Co., Ltd.	Transistor à structure verticale et dispositif électrique le comprenant
US11177390B2 (en)	2018-11-20	2021-11-16	Lg Display Co., Ltd.	Transistor having vertical structure and electric device
US11777037B2 (en)	2018-11-20	2023-10-03	Lg Display Co., Ltd.	Transistor having vertical structure and electric device

Publication	Publication Date	Title
JPH02140863U (fr)	1990-11-26
JPH0479424U (fr)	1992-07-10
JPH03101556U (fr)	1991-10-23
JPS63124762U (fr)	1988-08-15
JPS62151769U (fr)	1987-09-26
JPS63174464U (fr)	1988-11-11
JPH02118954U (fr)	1990-09-25
JPH0342124U (fr)	1991-04-22
JPS6393661U (fr)	1988-06-17
JPS6099553U (ja)	1985-07-06	半導体装置
JPH03101557U (fr)	1991-10-23
JPS6018558U (ja)	1985-02-07	薄膜トランジスタ素子
JPS62109463U (fr)	1987-07-13
JPS61109151U (fr)	1986-07-10
JPH02137054U (fr)	1990-11-15
JPS6197860U (fr)	1986-06-23
JPS63114046U (fr)	1988-07-22
JPH02118955U (fr)	1990-09-25
JPS63114047U (fr)	1988-07-22
JPH01104051U (fr)	1989-07-13
JPH02140853U (fr)	1990-11-26
JPH03101518U (fr)	1991-10-23
JPS6221558U (fr)	1987-02-09
JPH0258347U (fr)	1990-04-26
JPS635649U (fr)	1988-01-14