JPH02149200U - - Google Patents

Info

Publication number
JPH02149200U
JPH02149200U JP5861389U JP5861389U JPH02149200U JP H02149200 U JPH02149200 U JP H02149200U JP 5861389 U JP5861389 U JP 5861389U JP 5861389 U JP5861389 U JP 5861389U JP H02149200 U JPH02149200 U JP H02149200U
Authority
JP
Japan
Prior art keywords
memory chip
insulating substrate
back surface
magnetic valve
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5861389U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5861389U priority Critical patent/JPH02149200U/ja
Publication of JPH02149200U publication Critical patent/JPH02149200U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の実施例を示す図、第2図は本
考案の実施例の突起の形成方法を説明するための
図、第3図は従来の磁気バルブメモリデバイスを
示す図、第4図は従来の磁性薄膜によるバブル転
送パターンを示す図、第5図は考案が解決しよう
とする課題を説明するための図である。 図において、10は磁気バルブメモリチツプ、
11は突起、12は絶縁基板、13,14はバイ
アス磁界印加用の磁石(永久磁石)を示す。
FIG. 1 is a diagram showing an embodiment of the present invention, FIG. 2 is a diagram for explaining a method of forming a protrusion according to an embodiment of the present invention, FIG. 3 is a diagram showing a conventional magnetic valve memory device, and FIG. 4 is a diagram showing a conventional magnetic valve memory device. The figure shows a bubble transfer pattern using a conventional magnetic thin film, and FIG. 5 is a diagram for explaining the problem to be solved by the invention. In the figure, 10 is a magnetic valve memory chip;
11 is a protrusion, 12 is an insulating substrate, and 13 and 14 are magnets (permanent magnets) for applying a bias magnetic field.

Claims (1)

【実用新案登録請求の範囲】 絶縁基板12と、該絶縁基板12上に搭載され
る磁気バルブメモリチツプ10と、該絶縁基板1
2に平行に配置されたバイアス磁界印加用の磁石
13,14とを少なくとも具備した磁気バルブメ
モリデバイスにおいて、 上記磁気バブルメモリチツプ10の裏面の一方
の端部に突起11を設け、絶縁基板12に対して
傾斜して搭載できるようにしたことを特徴とする
磁気バルブメモリデバイス。
[Claims for Utility Model Registration] An insulating substrate 12, a magnetic valve memory chip 10 mounted on the insulating substrate 12, and the insulating substrate 1
In the magnetic valve memory device, a projection 11 is provided at one end of the back surface of the magnetic bubble memory chip 10, and a protrusion 11 is provided on one end of the back surface of the magnetic bubble memory chip 10, and a projection 11 is provided on one end of the back surface of the magnetic bubble memory chip 10. A magnetic valve memory device characterized in that it can be installed at an angle to the other side.
JP5861389U 1989-05-23 1989-05-23 Pending JPH02149200U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5861389U JPH02149200U (en) 1989-05-23 1989-05-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5861389U JPH02149200U (en) 1989-05-23 1989-05-23

Publications (1)

Publication Number Publication Date
JPH02149200U true JPH02149200U (en) 1990-12-19

Family

ID=31584384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5861389U Pending JPH02149200U (en) 1989-05-23 1989-05-23

Country Status (1)

Country Link
JP (1) JPH02149200U (en)

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