JPH0215552A - Ion injecting device - Google Patents

Abstract

PURPOSE:To prevent the electrostatic breakdown generated by charge-up by providing, in front of a wafer on a rotating disc, an electro-magnetic wave generating device for exciting the surface electrode of the wafer and the rotating disc around the ion injecting face. CONSTITUTION:A wafer 1 removably provided on a rotating disc 2, ion beam 3 to be irradiated to the wafer 1 and arc lamps 11, 12 as an electromagnetic wave generating device are provided. Both arc lamps 11, 12 are constructed such as to excite the surface electrode of the wafer 1 and a rotating disc 2 around the ion injecting face A and are provided with reflecting mirrors 13, 14 for focusing the light (electromagnetic wave B) of the arc lamps 11, 12 and irradiating it around the ion injecting face A. Accordingly, even if the charge-up is generated at the ion injecting face A of the wafer 1, the surface electrode of the wafer 1 and the rotating disc 2 excited by the electromagnetic wave B around the ion injecting face A is drawn in by the charge-up potential. As a result, the neutralization of charge-up can be securely performed and the electrostatic breakdown can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion implantation device used in a semiconductor manufacturing process.

[Conventional technology]

Conventionally, this type of ion implantation apparatus (end station portion) is known as an apparatus for implanting ions into a wafer on a rotating disk, and is configured as shown in FIG. To explain this based on the same figure, in the same figure, the reference numeral 1 denotes a wafer that is removably mounted on a rotating disk 2, 3 denotes an ion beam irradiated to this wafer l, and 4 denotes this wafer. A thermionic source 6 is provided on the side of the ion beam 3 and generates thermionic electrons 5.
This is a reflecting plate that generates secondary electrons 7 by reflecting thermionic electrons 5 generated from the reflector.

In the ion implantation apparatus configured in this manner, charge-up on the wafer 1 is neutralized by secondary electrons 7 generated from the reflection plate 6.

[Problem to be solved by the invention]

However, in this type of ion implantation device, since the thermionic source 4 simply generates thermionic electrons 5, 2.
It was not possible to control the amount of secondary electrons 7 generated. As a result, there was a problem in that the charge amplifier could not be neutralized reliably, and electrostatic damage on the wafer due to charge-up could not be prevented.

The present invention has been made in view of the above circumstances, and provides an ion implantation device that can reliably neutralize charge-up and thereby prevent electrostatic damage on a wafer due to charge-up. It is something to do.

[Means to solve the problem]

The ion implantation apparatus according to the present invention is provided with an electric (n-wave generator) around the ion implantation surface in front of a wafer on a rotating disk to excite surface electrons of the wafer and the rotating disk.

[For production]

In the present invention, excited surface electrons of the wafer and rotating disk are drawn around the ion-implanted surface by a charge-up potential.

〔Example〕

EMBODIMENT OF THE INVENTION Hereinafter, the structure etc. of this invention will be explained in detail by the Example shown in the figure.

FIG. 1 is a diagram showing an ion implantation apparatus according to the present invention. In the figure, the same members as in FIG. 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the figure, reference numerals 11 and 12 indicate arc lamps as electromagnetic wave generating devices, which are located on both sides of the ion beam 3 and in front of the wafer l. Both arc lamps 11
．． 12 is configured to excite surface electrons of the wafer 1 and the rotating disk 2 around the ion implantation surface A.

13 and 14 are the lights (electromagnetic waves) of the arc lamp 11;
This is a reflecting mirror that focuses the ion beam and irradiates it around the ion implantation surface A. Note that the symbol B in the figure represents an electromagnetic wave.

In the ion implantation apparatus configured in this way, the ion beam 3 is implanted into the wafer 1 on the rotating disk 2,
Even if the ion-implanted surface A of the wafer 1 is charged up, the surface electrons of the wafer 1 and the rotating disk 2 excited by the light (electromagnetic wave B) from the arc lamps 11 and 12 around the ion-implanted surface A will reach the charge amplifier potential. Since the charge amplifiers generated on the surface of the wafer l are reliably neutralized.

In this embodiment, a reflecting mirror 13.
Although the present invention is not limited to this example, the present invention may be used in combination with other optical devices.

Further, in this embodiment, an arc lamp 11, 12 is used as the electromagnetic wave generator, but the present invention may also use, for example, a halogen lamp or an excimer laser.
The type can be changed as appropriate.

Further, in this embodiment, light is used to excite the surface electrons of the wafer 1 and the rotating disk 2, but the present invention is not limited to this, and a wick wave may also be used.

〔Effect of the invention〕

As explained above, according to the present invention, an electromagnetic wave generator for exciting surface electrons of the wafer and the rotating disk is provided around the ion-implanted surface in front of the wafer on the rotating disk. The surface electrons of the wafer and rotating disk that are excited are drawn in by the charge-up potential. Therefore, since charge-up can be neutralized reliably, electrostatic damage on the wafer due to charge-up can be prevented.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an ion implantation device according to the present invention, and FIG. 2 is a diagram showing a conventional ion implantation device. 1... Wafer, 2... Rotating disk, 11.1
2...Arc lamp, A...Ion implantation surface, B...Electromagnetic wave.

Claims (1)

[Claims] An ion implantation apparatus for implanting ions into a wafer on a rotating disk, characterized in that an electromagnetic wave generator for exciting surface electrons of the wafer and the rotating disk is provided around the ion implantation surface in front of the wafer. .