JPH0215632B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film processing apparatus for forming a thin film on a substrate or etching a thin film on a substrate.

One example of a specific field of application of the present invention is the thin film fabrication process in the manufacturing process of silicon monolithic integrated circuits. For example, the diameter is about 120 mm and the thickness is about 0.5 mm.
It is necessary to form a metal thin film or an insulating thin film with a thickness of about 1 micron on a large amount of silicon wafer (substrate) of about mm. In general, the electrical, mechanical, and physical properties required for the thin film to be produced are better as the partial pressure of impurity gases in the vacuum container is lower; therefore, the vacuum container in which sputtering is to be performed is possible. It is preferable to shorten the exposure time to the atmosphere as much as possible. In addition, when operating a sputtering device to process a large amount of silicon wafers, it is preferable to reduce the proportion of the total time taken up by inserting and removing wafers into the device and evacuation. It is desirable to reduce the volume of the part (holder). Furthermore, in order to speed up the processing of large quantities, it is preferable to insert and remove wafers into and out of the equipment at multiple locations, which also prevents dust from adhering to the wafers to be processed or pinholes where the film does not adhere. Therefore, even if dust is generated in the vacuum chamber, it is preferable to prevent it from adhering to the surface of the wafer. Particularly, dust and pinholes are related to quality, and at the very least, it is necessary to avoid them at all costs.

Conventional sputtering devices of this type usually have several or more coating stations arranged in a straight line or in a ring. In order to avoid the above-mentioned problems in such a structure, as will be explained later, there is a structure in which the coaching station is arranged so that the ring is vertically erected so that each wafer is always arranged vertically. This has resulted in a considerable improvement, but when dust is generated in the equipment, there is some adhesion even though it is vertical, and it is not enough to avoid the adhesion and pinholes, and it is also difficult to prevent the wafer from entering the equipment. It was difficult to perform insertion and removal at multiple locations.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a thin film processing vacuum apparatus that minimizes the adhesion of dust and the formation of pinholes.

Another object of the present invention, in addition to the above, is to provide a thin film processing vacuum apparatus that allows wafers to be inserted into and removed from a substrate holder at a plurality of locations.

In order to achieve the above objects, the present invention prevents the main source of dust from being above the wafer and avoids standing the ring vertically.

That is, according to the present invention, there is provided a substrate holder which is rotatably provided in a vacuum container and can concentrically hold a plurality of substrates to be subjected to thin film processing, and an unprocessed substrate is inserted into the vacuum container from the atmosphere side. In the thin film processing apparatus, the thin film processing apparatus includes a substrate moving means that is mounted on the substrate holder and detaches the substrate processed into a thin film at a predetermined position by rotating the substrate holder from the substrate holder and takes it out from the vacuum chamber to the atmosphere side. The holder has a polyhedral structure with a vertical axis of rotation, and is configured such that the substrate can be mounted on each surface at the same height facing outward in a nearly vertical posture, and the substrate moving means includes: A load-lock valve provided on the side surface of the vacuum container, which opens and closes a door parallel to the side surface of the container for the outside of the container, and a load-lock valve provided in the direction along the side surface for the inside of the container. A load lock chamber having a relatively small capacity that allows passage of the substrate and airtight sealing by opening and closing, a substrate mounting mechanism storage portion that temporarily holds the substrate passing through the load lock valve, and this substrate mounting mechanism. A thin film processing vacuum apparatus is obtained, comprising an in-container moving means for moving the substrate between a storage section and the substrate holder, and an independent exhaust pump is attached to the load lock chamber. .

Further, in the above device, two sets of the board moving means are provided at substantially the same height, and the two sets of board moving means are configured to be able to simultaneously perform insertion, mounting, and removal. A thin film processing vacuum apparatus is obtained.

Next, a detailed description will be given with reference to the drawings.

FIG. 1 is a diagram showing the main parts of an example of the configuration of a conventional thin film processing apparatus. In FIG. 1, the substrate holder 1 is vertical and has five coating stations 2, 2', 2'', . There is. To insert a wafer, first open the coaching station 2 to position 6 on the left side of the figure. On the other hand, a cassette 8 is movably held in the cassette guide 7.
A large number of wafers 9 are vertically stored therein. One of the ends of this wafer 9 is then mounted on the above-mentioned open coaching station 6, and then returned to position 2. From now on, the paper is sent in the usual manner to 2' and 2", and sputtering is performed at 2".

In this apparatus, all of the wafers mounted on the coaching stations 2, 2', . . . are vertical, so that there is certainly less dust attached. However, when the substrate holder 1 rotates and moves, the vibration causes dust to fall from the holder, so that even if it is only a small amount, a small amount of matter is deposited on the substrate below. Even a very small amount of this deposit can cause problems as mentioned above. Further, as can be seen from FIG. 1, the substrate holder 1 is quite large and extends vertically, so that it would be extremely difficult to handle it if another substrate insertion/removal position were to be provided above. Furthermore, the shape of the substrate holder itself becomes large, requiring a large exhaust device.

FIG. 2 is an external view of a vacuum container and a base device mechanism section according to an embodiment of the present invention, viewed from an angle.

FIG. 3 is a cross-sectional view of the internal structure of the vacuum vessel and the structure of the sputter section in the embodiment of FIG. 2.

The configuration and operation of this embodiment will be described below with reference to FIGS. 2 and 3. It goes without saying that the reference numbers for each component are the same in both figures. The vacuum container 10 is composed of a solid body having six square surfaces on the outside. The first load lock chamber 2 has a relatively small container on its surface.
0 and a base insertion mechanism storage chamber 30 are installed, and a load lock valve 25 is installed between the two chambers.
is provided. A sputter electrode 50 is attached to the surface, and a target 51 is provided on the vacuum side surface. A second load lock chamber 40 having a relatively small capacity and a substrate detachment mechanism storage chamber 30' are attached to the surface, and a load lock valve 26 is provided between the two chambers. Note that the first load lock chamber 20, load lock valve 25, and base body insertion mechanism storage chamber 3 attached to the surface
0, the second load-lock chamber 40 attached to the surface, the load-lock valve 26, and the substrate detachment mechanism storage chamber 30' are located at positions symmetrical to the central axis 61 of the vacuum vessel, respectively. A second sputter electrode 50' is attached to the opposite surface. A shaft 62 for driving the substrate holder 60 inside the vacuum container is introduced from the upper surface V of the vacuum container 10, and an intermittent rotational movement around the shaft 61 inside the vacuum container 60 is caused by a drive source (not shown). Have them do it. An exhaust port (not shown) is provided on the bottom of the vacuum container, and a pump connected to the exhaust port can evacuate the inside of the vacuum container to create a vacuum. Also, although it is not absolutely necessary,
load lock chamber 20, second load lock chamber 4
In order to maintain the impurity gas partial pressure in the vacuum container at a low level, it is desirable to provide independent pumps for each of the vacuum chambers. Argon gas is usually introduced into the vacuum vessel 10 by a gas introduction system (not shown), and by balancing the flow rate and pumping speed of the pump, glow discharge is performed, and a pressure equilibrium state suitable for sputtering is achieved. can be made. Each structure attached to each side of the vacuum vessel has a sealing mechanism that can maintain the vacuum of the vacuum vessel using insulating spacers 53, 53'.

Next, the order of transferring wafers will be explained. First, referring primarily to FIG. 2, an operator attaches to the cassette guide 70 a cassette 81 vertically containing a plurality of wafers 91 on which thin films are to be formed. Next, load lock valve 2
5 is closed, the first load lock chamber 20 is brought into an atmospheric condition, and the door is automatically opened by a door opening/closing mechanism (not shown) and moved to the position shown by the two-dot chain line 21. In this state, the wafer (not shown) is It is moved and fixed at position 92 along the trajectory indicated by arrow a by the up-and-down mechanism. Next, the door is closed by the door opening/closing mechanism, and the wafer moves to the position indicated by the dashed-dotted line 93 along the trajectory indicated by the arrow b. Next, after the first load lock chamber is evacuated, the load lock valve 25 is opened and the wafer 91 is transferred along the trajectory shown by arrow c to a substrate insertion mechanism (not shown) housed in the substrate insertion mechanism storage chamber 30. and fix it at the position indicated by the one-dot chain line 94. Next, the wafer is inserted into the substrate holder along the trajectory indicated by arrow d by the substrate insertion mechanism. The wafers on which thin films have been fabricated are transported from the vacuum container to the atmosphere.
Referring to FIG. 3, the substrate detachment mechanism/substrate detachment mechanism storage chamber 30', the load lock valve 26,
Via the second load lock chamber 40, the processed wafers are stored in another cassette 82', following exactly the reverse order of what has just been described.

The above-mentioned transfer of wafers is performed one after another, and the cassette 81 is automatically moved at predetermined intervals along the cassette guide 70 in the direction of the arrow α every time a wafer is sent out from there, so that all the wafers are transferred. The delivered cassette 82 is sent in the direction of arrow β and removed from the apparatus by an operator. On the other hand, if the operator prepares an empty cassette in advance in another cassette guide 70', processed wafers are stored one by one in this cassette, and each time a wafer is stored, the wafer is moved in the direction of arrow β'. 82', which is automatically moved at predetermined intervals along the wafer line, allowing an operator to receive a cassette 82' full of processed wafers from the apparatus. Note that it is desirable that the volumes of the first and second load lock chambers be as small as possible. In particular, when transferring wafers by opening the loadlock valve without evacuating the loadlock chamber, contrary to the above explanation, the atmospheric pressure components in the loadlock chamber may flow into the vacuum chamber, causing impurity gases during sputtering to flow into the vacuum chamber. This is extremely important as it will increase the pressure.

Next, with particular reference to FIG. 3, the transfer of wafers within the vacuum container will be described in more detail. The wafer 91 introduced into the vacuum container is moved by a substrate insertion mechanism (not shown) along the trajectory indicated by the arrow d, and is moved to the substrate holder 6 having four wafer mounting surfaces.
0 and fixed at the position shown at 91A. Next, the substrate holder 60 is attached to the rotating shaft 6
Rotate about 90 degrees around 1 in the direction shown by arrow j and stop. As a result, the aforementioned wafer is located at position 91B.
Target surface 5 where sputtering occurs
Opposed to 1. The target 51 is assembled into a sputter electrode 50 attached to the wall of the vacuum chamber via an insulating spacer 53, and is supplied with power from a sputter power supply 100 via a power supply line 101. When performing DC sputtering, the sputter power supply 100 applies a negative high voltage to the electrode 50 with respect to the metal wall of the vacuum container, which is generally at ground potential. In the case of high frequency sputtering, a high frequency voltage is supplied as the sputter power supply 100. Thus, as already mentioned, the inside of the vacuum vessel can be maintained at a pressure suitable for causing discharge, and when power is supplied in this state, spatter atoms emitted from the target 51 adhere to the surface of the base 91, forming a thin film. form. A thin film with a desired thickness can be obtained by performing discharge with a predetermined power for a predetermined time. Substrate holder 60 then rotates approximately 90 degrees about axis 61 in the direction indicated by arrow j and stops, thereby moving the wafer to position 91c. Then, it is moved along the trajectory shown by the arrow e by a substrate detachment mechanism (not shown) and sent to the atmosphere through the substrate detachment mechanism storage chamber 30', the load lock valve 26, and the second load lock chamber 40 in this order. After being taken out and stored in a cassette, it moves in the direction indicated by arrow β'.

In the above, since the four substrates are mounted at the same height on the substrate holder and facing vertically outward, dust adhesion can be avoided.

Furthermore, another sputter electrode 50' can be incorporated into the vacuum vessel 10 if necessary.
If the direction of rotation of the substrate holder is selected as shown by arrow j', contrary to the above case, atoms sputtered from target 51' can be deposited at position 91D to form a thin film. Attach targets 51, 51' made of different materials to the two sputtering electrodes 50, 50', select the direction of rotation from either arrow j or arrow j', and select the electrodes 50 or 50 to be sputtered. By selecting either one of the sputter power supplies 100 and 100' to supply power, two different types of thin films can be produced using the same apparatus. Although not shown in the drawings, since power is supplied to the sputter electrodes 50, 50' and heat is generated, the electrode assemblies 52, 5
2' normally has cooling water flowing through it.

FIG. 4 is a diagram showing the configuration of a second embodiment of the present invention, which is a modification of the first embodiment. 1st
The difference from the embodiment shown in FIG. 2 is that a substrate detachment mechanism storage chamber 30', a load lock valve 26, and a second load lock chamber 40 are provided on the surface corresponding to the surface of the vacuum vessel in FIG. The sputter electrode 50 is attached to a surface corresponding to the surface of the vacuum container. As a result, the wafer inserted onto the substrate holder 60 is moved around the axis 61 in the direction of the arrow j.
Intermittent rotations of 90 degrees form a first thin film facing the target 51' at position 91B, and then a second film facing the target 51 at position 91C.
A thin film is formed, and is further detached from the substrate holder at position 91D and transported along the trajectory shown by arrow e. When the targets 51 and 51' are made of the same material, the boundary between the films produced at the positions 91B and 91C is usually indistinguishable; however, when the targets 51 and 51' are made of different materials, two thin films made of different materials are formed on the wafer. can be formed.

In an apparatus with such a configuration, a cassette containing wafers on which thin films are to be fabricated moves in the direction of arrow α, and after all wafers have been fed into the vacuum chamber, it moves in the direction of arrow β and is removed from the apparatus. It will be done. A cassette for storing wafers on which thin films have been formed is attached to the apparatus and moves in the direction α' to sequentially accommodate the wafers, and is removed from the apparatus in the direction β'. Therefore, the cassette containing wafers changes its direction of travel by about 90 degrees when the thin film is fabricated using this apparatus.

FIG. 5 shows a third embodiment of the invention. Here, insertion of the substrate into the substrate holder in the vacuum container and removal of the substrate from the substrate holder are performed by a substrate attachment/detachment mechanism of the same structure. As a result, the base insertion mechanism storage chamber and the base removal mechanism storage chamber described in the first and second embodiments are not provided in separate locations.
As shown in the figure, a substrate attachment/detachment mechanism storage chamber 30 is provided on the surface of the vacuum container, and a first loadlock chamber 20 is provided on both sides of the chamber via a loadlock valve 25.
A second load lock chamber 40 is provided via a load lock valve 26. and up to 3
Up to 1 sputter electrodes can be attached.
The wafer is transported along the trajectories shown by arrows a, b, c, and d until it is attached to the substrate holder in the same manner as in the previously described embodiment, but after the thin film is formed, it is removed from the substrate holder and transferred along the trajectory shown by arrow e. , and returns to the base attachment/detachment mechanism housing chamber 30 again. Next, the load lock valve 26 is opened and the wafer is transferred along the trajectory shown by the arrow f to the position shown by the dashed line 95 inside the second load lock chamber 40 and fixed therein. Next, the load lock valve 26 is closed, the load lock chamber is made into the atmosphere, and the door is automatically opened by a door opening/closing mechanism (not shown), as indicated by the two-dot chain line 41.
The wafer is moved to the position shown by , and accordingly the wafer is moved along the arrow g to the position shown by the dashed-dotted line 96 . Further, the wafer is housed in a cassette 82 located at the bottom of the door 41 opened along the arrow h by a wafer up/down mechanism (not shown). After the wafers have been transferred from the door to the cassette, the door is closed again, preferably to a pump dedicated to the second load lock chamber, and evacuated to await the delivery of the next processed wafer.

In this embodiment, a cassette 81 containing wafers 91 on which thin films are to be fabricated is placed in a cassette guide 7.
0 in the direction α, but after unprocessed wafers have been sent out, the cassette 82 can be used as a cassette 82 for storing processed wafers 99. A cassette 82 containing processed wafers can be moved in the direction of arrow β. The thin film of the wafer 91 in the unprocessed wafer storage cassette 81 should be prepared by making the opening and closing movements of the door of the first load lock chamber and the door of the second load lock chamber in the same direction as shown in this figure. Both the surface and the surface on which the thin film of the wafer 99 in the processed wafer storage 82 is formed can be oriented in the same direction with respect to the advancing directions α and β of the cassette.

FIG. 6 explains in more detail the relationship between wafer transport and the inside of the vacuum container in the third embodiment shown in FIG. In the figure, the numbers of each part are the same as in FIG. The wafer 91 introduced into the vacuum container is moved along the arrow d by the substrate attachment/detachment mechanism and is first attached to the substrate holder 60 at a position 91A.
is inserted into one side of the Next, the substrate holder is rotated about 90 degrees around the axis 61 in the direction of arrow j, and
The wafer stops at position 91B where target 5
Opposed to 1. A thin film is formed at position 91B by supplying power from power supply 100 to sputter electrode 50 via power supply line 101. Next, the substrate holder is rotated about 90 degrees again, and the wafer is placed at position 91.
Moving to C, sputter electrode 5 provided as necessary
Perform sputtering at 0'. Approx. of board holder
By performing an intermittent rotation of 90 degrees, the first wafer returns to position 91A and returns to the substrate attachment/detachment mechanism storage chamber 30 along the arrow e by the substrate attachment/detachment mechanism, and then passes through the loadlock valve 26 to the second loadlock chamber 40. will be transferred to.

The substrate holder 60 has four wafer insertion surfaces. Therefore, the time for inserting and removing the wafer at position 91A is the same as that at positions 91B, 91C, and 91D.
By combining this with the time required to form a thin film on the wafer in step 3, operations at these four locations can proceed simultaneously. Figure 6 shows a case where three sputter electrodes are installed in the same vacuum chamber, but in this case three thin films of different materials are fabricated on a wafer using different targets. can do. In addition, in place of some sputter electrodes, infrared irradiation lamps can be installed to heat the wafer, and an electronic shower source can be installed to bombard the wafer with electrons, or an ion shower source can be installed to bombard the wafer with ions. It is also possible to perform wafer heating, surface cleaning, and thin film etching processes in the same vacuum before or after film formation.

FIG. 7 is a diagram showing the configuration of a fourth embodiment of the present invention, which is a modification of the third embodiment. The surface of the vacuum container has the same structure as the third embodiment. However, the first load lock chamber 20', the lock valve 2
5', base attachment/detachment mechanism storage chamber 30', load lock 2
6' and a second load lock chamber 40'. Although not shown in the device, these two
A total of two cassette guides are provided along one side. A cassette containing unprocessed wafers 91 is installed into the apparatus along arrow α, while a cassette containing another unprocessed wafer 91' is installed into the apparatus along arrow α. The wafer 91 is inserted into the substrate holder 60 at a position 91A along the arrow d via the first load lock chamber 20, the lock valve 25, and the substrate attachment/detachment mechanism housing chamber 30, and then rotated around the axis 61 of the substrate holder 60. The substrate moves to form a thin film at position 91B, and then rotates further, and is detached from the substrate holder at position 91C, and moves along arrow e' to the other substrate attachment/detachment mechanism housing chamber 30' and load lock valve 26'. ,
It is sent out of the vacuum container via the second load lock chamber 40'. On the other hand, the unprocessed wafer 91' in another cassette passes through the other first load lock chamber 20', the lock valve 25', and the substrate attachment/detachment mechanism storage chamber 30', and is moved to the position 91C along the arrow d'.
The substrate holder 60 is inserted into the substrate holder 60, and then moved by rotation around the axis 61 of the substrate holder 60, forming a thin film at a position 91D, and then further rotated and detached at a position 91A, along the arrow e. , the base attaching/detaching mechanism storage chamber 30, the load lock valve 26, and the second load lock chamber 40, and then sent out to the atmosphere. Since the substrate holder 60 has a surface into which four wafers can be inserted, the position 91
Insertion of wafer 91 in A and wafer 91'
The time of detachment of wafer 9 at position 91C
1' insertion and removal time of wafer 91, position 9
By combining a total of four times, the time for forming a thin film at 1B and the time for forming a thin film at position 91D, the work at these four locations can be performed simultaneously. This fourth embodiment is particularly useful when the time required to fabricate the thin film is sufficiently short and the productivity of the device is determined by the time required to transport the wafer.
This has the effect of providing greater productivity than the previous embodiments.

Although a specific embodiment of the present invention has been described above with respect to a sputtering apparatus for producing a thin film on a wafer, the substrate material to which the present invention can be applied is not limited to semiconductor silicon wafers, but metal, glass, etc. It can also be applied to inorganic insulators such as ceramics, organic plastics, etc. Furthermore, in terms of shape, it can be used not only for circular substrates such as silicon wafers, but also for rectangular and various other plate-shaped substrates. Further, in the specific application example of the present invention, the formation of a thin film on a wafer by sputtering has been described, but various modifications are possible. It can also be applied to techniques such as bias sputtering, in which a thin film is formed on a substrate while a voltage is applied to the substrate holder, and reactive sputtering, in which a thin film is formed by adding an active gas other than argon to generate a discharge. Furthermore, the gist of the present invention is not limited to thin film production by sputtering. For example, thin film production by plasma CVD, plasma polymerization, etc. can be achieved without changing the configuration of the apparatus in the specific embodiments. In addition, in the explanation of the third embodiment, it was explained that an ion shower source is provided in place of some of the sputter electrodes, but instead, an apparatus for etching a thin film formed externally is provided in which all of the sputter electrodes are replaced with ion shower sources. It can also be used as Furthermore, various types of etching can be performed by using the whole as an ion shower source.

As can be seen from the above description, in the thin film processing vacuum apparatus of the present invention, the substrate is attached to the substrate holder in an almost vertical posture and is attached so as not to overlap vertically, so that dust adhesion can be prevented. The loadlock chamber has a relatively small shape suitable for loading and unloading a single board, and opening the loadlock valve has little effect on the vacuum level in the vacuum chamber.Moreover, if an independent exhaust pump is installed, The chamber is evacuated extremely quickly, and the partial pressure of impurity gases within the vacuum container can be maintained extremely low.

[Brief explanation of drawings]

FIG. 1 is an oblique view of a part of the configuration of a conventional thin film processing apparatus, and FIG. 2 is an oblique view of a part of a sputtering apparatus for forming a thin film on a wafer according to a first embodiment of the present invention. 3 is a schematic cross-sectional view of the wafer transfer section and sputtering section in the first embodiment of the present invention, FIG. 4 is a schematic cross-sectional diagram of the second embodiment of the present invention, and FIG. In the third embodiment of the present invention, a perspective view of a mechanism for using an unprocessed wafer storage cassette as a processed wafer storage cassette, FIG. FIG. 4 is a schematic cross-sectional view of the configuration of a fourth embodiment of the present invention. Explanation of symbols: 10 is a vacuum container, 20 and 20'
25 and 26 are load lock valves, 30 and 30' are substrate insertion mechanism storage chambers, 40 and 40' are second load lock chambers, 50 is a sputter electrode, 60 is a substrate holder,
Reference numerals 70 and 70' represent cassette guides, 81 and 82 represent cassettes, and 91 and 91' represent wafers (substrates), respectively.

Claims (1)

[Claims] 1. A substrate holder rotatably provided in a vacuum container and capable of concentrically holding a plurality of substrates to be subjected to thin film processing, and a substrate holder to be unprocessed inserted into the vacuum container from the atmosphere side. and a substrate moving means that is mounted on the substrate holder and that is subjected to thin film processing at a predetermined position by rotation of the substrate holder and detached from the substrate holder and taken out from the vacuum chamber to the atmosphere. The substrate holder has a polyhedral structure with a vertical rotation axis, and is configured such that the substrate can be mounted on each surface at the same height facing outward in a nearly vertical posture, and the substrate moving means , a load lock valve provided on the side surface of the vacuum container, opening and closing a door parallel to the side surface of the container for the outside of the container, and oriented along the side surface for the inside of the container; a load lock chamber having a relatively small capacity that allows the board to pass through and hermetically seal by opening and closing the load lock valve; a base mounting mechanism storage section that temporarily holds the board passing through the load lock valve; A thin film processing vacuum apparatus comprising an in-container moving means for moving the substrate between a mechanism storage section and the substrate holder, and an independent exhaust pump is attached to the load lock chamber. 2. A substrate holder that is rotatably provided in a vacuum container and can concentrically hold a plurality of substrates to be subjected to thin film processing, and an unprocessed substrate is inserted into the vacuum container from the atmosphere side and attached to the substrate holder. and a substrate moving means for detaching the substrate processed into a thin film at a predetermined position from the substrate holder and taking it out from the vacuum chamber to the atmosphere by rotating the substrate holder, wherein the substrate holder rotates vertically. It has a polyhedral structure with an axis, and is configured so that the substrate can be mounted on each surface at the same height facing outward in a nearly vertical posture, and the substrate moving means is configured to attach to the side surface of the vacuum container. The board is opened and closed by opening and closing a door parallel to the side surface of the container for the outside of the container, and by opening and closing a load lock valve provided along the side surface for the inside of the container. a load lock chamber having a relatively small capacity that allows the passage of the substrate and airtight sealing; a base mounting mechanism housing section that temporarily holds the substrate passing through the load lock valve; and the base mounting mechanism housing section and the substrate. an in-container moving means for moving the substrate between the holders, wherein the load lock chamber is provided with an independent exhaust pump, and the substrate moving means moves two sets of substrates at substantially the same height. 1. A thin film processing vacuum apparatus characterized in that the two sets of substrate moving means are configured so that they can be inserted and loaded and removed and removed at the same time.