JPH02172879A - Oxidation resistant vessel made of sic - Google Patents
Oxidation resistant vessel made of sicInfo
- Publication number
- JPH02172879A JPH02172879A JP32623888A JP32623888A JPH02172879A JP H02172879 A JPH02172879 A JP H02172879A JP 32623888 A JP32623888 A JP 32623888A JP 32623888 A JP32623888 A JP 32623888A JP H02172879 A JPH02172879 A JP H02172879A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- vessel
- pores
- oxidation
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003647 oxidation Effects 0.000 title claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 22
- 239000011148 porous material Substances 0.000 claims abstract description 11
- 230000035699 permeability Effects 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 238000010304 firing Methods 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000004584 weight gain Effects 0.000 description 2
- 235000019786 weight gain Nutrition 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明はたとえば蛍光体粉末の焼成に用いる耐酸化性
のＳｉＣ製容器に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention This invention relates to an oxidation-resistant SiC container used, for example, for firing phosphor powder.
従来の技術
再結晶質ＳｉＣ製の容器が蛍光体粉末の焼成に広く用い
られている。使用条件としては、大気中１０００℃〜１
２００℃程度の温度で使用されている。BACKGROUND OF THE INVENTION Recrystallized SiC containers are widely used for firing phosphor powders. The usage conditions are 1000℃~1 in the atmosphere.
It is used at a temperature of about 200°C.
発明が解決しようとする課題
ところが、再結晶質ＳｉＣは、気孔を１５〜２５％程度
有するために酸化に対しての抵抗が小さく、長時間使用
を繰返すうちに、気孔内部の酸化が進みシリカが生成さ
れてしまう。このため熱伝導性が下がり、そのために耐
熱衝撃性が低下して、折損や、破損が生じるという問題
点があった。Problems to be Solved by the Invention However, since recrystallized SiC has about 15 to 25% pores, it has low resistance to oxidation, and as it is repeatedly used for a long time, oxidation inside the pores progresses and the silica deteriorates. It will be generated. As a result, thermal conductivity decreases, resulting in a decrease in thermal shock resistance, resulting in problems such as breakage and damage.
発明の目的
この発明は、耐酸化性を向上して寿命を長くすることの
できる耐酸化性のＳｉＣ製容器を提供することを目的と
する。OBJECTS OF THE INVENTION An object of the present invention is to provide an oxidation-resistant SiC container that can have improved oxidation resistance and a longer service life.
発明の要旨
この発明は特許請求の範囲の耐酸化性のＳｉＣ製容器を
要旨としている。SUMMARY OF THE INVENTION The gist of the present invention is an oxidation-resistant SiC container as claimed in the claims.
課題を解決するための手段
再結晶ＳｉＣから成る容器は、内部に８１を２〜１５％
含有し、加熱してシリカとなる物質を気孔中に含浸ある
いは塗布した後に大気中あるいは酸素を２０〜４０％程
度含む気流中で焼成されて、内部に酸化膜が生成されて
いる。このＳｉＣ容器の通気率が４．０×１０１０−３
ｃＴｎ−／ｃイ・ＳｅＣ−ＣｍＨ２Ｏ以下である。Means for solving the problem A container made of recrystallized SiC contains 2 to 15% of 81 inside.
After impregnating or coating the pores with a substance that becomes silica when heated, it is fired in the atmosphere or in an air stream containing about 20 to 40% oxygen, to form an oxide film inside. The air permeability of this SiC container is 4.0×1010-3
cTn-/c-SeC-CmH2O or less.
Ｓｉの含有量が２％より少ないと、加熱してシリカとな
る物質が過剰に気孔中に入ってしまい、焼成中に発砲し
てしまう等の理由により、製品の表面が不均一になる。If the Si content is less than 2%, an excessive amount of material that becomes silica upon heating will enter the pores and cause foaming during firing, resulting in an uneven surface of the product.
また表面に発砲した物質が使用中に被焼成物中に混入す
ることとなり好ましくない。１５％より多いと、気孔が
ほぼ１％以下になることから、通気率には良いが、酸化
膜の形成が妨げられることとなり好ましくない。In addition, the material ejected onto the surface may contaminate the object to be fired during use, which is undesirable. If it is more than 15%, the pores will be approximately 1% or less, which is good for air permeability, but it is not preferable because the formation of an oxide film will be hindered.
気流中の酸素が２０％より少いと、酸化膜の生成速度が
遅くなる等の理由により、焼成工程に時間が掛かること
になり、好ましくない。また気流中の酸素が４０％より
多いと、酸化速度が大きくなり、本体のＳｉＣ自身の酸
化が著しく大きくなるという理由で、好ましくない。If the oxygen content in the air stream is less than 20%, the firing process will take a long time due to reasons such as a slow rate of oxide film formation, which is not preferable. Moreover, if the amount of oxygen in the air flow is more than 40%, the oxidation rate increases and the oxidation of the SiC itself becomes significantly large, which is not preferable.
大気中あるいは上述の気流中で焼成して酸化膜を生成す
るのは、次の理由による。つまり、Ｓｉの酸化速度はＳ
ｉＣに比べて５〜１０倍程度早いことを利用し、ＳｉＣ
の気孔内部に微細なシリカ膜を積極的に生成させて、そ
れ以上酸化が進行することを防止するためである。The reason why an oxide film is produced by firing in the air or in the air stream described above is as follows. In other words, the oxidation rate of Si is S
Taking advantage of the fact that it is about 5 to 10 times faster than iC, SiC
This is to prevent further oxidation by actively forming a fine silica film inside the pores.
通気率と耐酸化性には相関が認められ、Ｓｉｃ容器の通
気率が４．０ＸＩＯ−３ｃ＋＋＋−ｍＬ／ｄ−ｓｃｃ
壱ｃｍＨ２０より大きいと、耐酸化性が低下し容器のラ
イフが短くなるためである。There is a correlation between air permeability and oxidation resistance, and the air permeability of the SIC container is 4.0XIO-3c+++-mL/d-scc.
This is because if it is larger than 1 cmH20, the oxidation resistance will decrease and the life of the container will be shortened.
実施例
本発明による実施例の再結晶ＳｉＣ製の容器は、内部に
Ｓｉを１３〜１５％含有し、大気中あるいは酸素を３０
％含む気流中で焼成した。この容器の通気率は２．
ＯＸ １０−３ｃｍＩＩＩＩＩＬ／ｃｒＩ１１ｅｃ１１
ｃｍＨ２０であった。Example A container made of recrystallized SiC according to an example of the present invention contains 13 to 15% Si inside and is exposed to air or oxygen at 30%.
It was fired in an air stream containing %. The ventilation rate of this container is 2.
OX 10-3cmIIIIL/crI11ec11
cmH20.
従来の従来例の再結晶質ＳｉＣ容器、および本発明によ
る上記実施例の容器から、１００１００Ｘ５０Ｘ５（の
テストピースを加工し、重油炉の中で１２００°Ｃの温
度で１００時間熱処理して酸化による各々の重量増加を
測定した。From the conventional conventional recrystallized SiC container and the container of the above embodiment according to the present invention, test pieces of 100100X50X5 were processed and heat-treated in a heavy oil furnace at a temperature of 1200°C for 100 hours to cause oxidation. The weight increase was measured.
第１図のように、本発明の実施例は酸化増量が少なく耐
酸化性が向上していることが判明した。As shown in FIG. 1, it was found that the examples of the present invention had little oxidation weight gain and improved oxidation resistance.
また、このテストピースから４Ｘ３Ｘ５０（ｍｍ ）の
ピースを加工し、曲げ強さ、並びに耐熱衝撃性の試験と
して水中落下による急冷後に曲げ強さを測定した。（第
２図参照）この結果、従来例はΔＴ ’Ｃが初期値より
低温側に大きくシフトしているが、本発明の実施例はそ
の変化が少ないことが伴る。なお、初期値とは熱処理を
行う前の測定値のことである。Further, a piece of 4×3×50 (mm 2 ) was processed from this test piece, and the bending strength was measured after quenching by dropping into water as a test for bending strength and thermal shock resistance. (See FIG. 2) As a result, in the conventional example, ΔT'C largely shifts to the lower temperature side than the initial value, but in the embodiment of the present invention, this change is small. Note that the initial value is a measured value before heat treatment.
発明の詳細
な説明したようにこの発明によれば、本発明品を使用す
ることにより、ＳｉＣ容器の耐酸化性のみならずも向上
し、その寿命がのびる。As described in detail, according to the present invention, by using the product of the present invention, not only the oxidation resistance of the SiC container but also the oxidation resistance is improved and the life of the SiC container is extended.
第１図は本発明の実施例と従来例の酸化増量を比較した
図、第２図はこの発明の実施例と従来例の曲げ強さを比
較した図である。
代 理 人 弁理士 １） 辺 徹Ｏ
：従来例
・：本児明の実施例FIG. 1 is a diagram comparing the oxidation weight gain of an embodiment of the present invention and a conventional example, and FIG. 2 is a diagram comparing the bending strength of an embodiment of the present invention and a conventional example. Agent Patent Attorney 1) Toru Bebe O
：Conventional example・：Example of Akira Honji
Claims (1)
を２〜１５％含有し、加熱してシリカとなる物質を気孔
中に含浸あるいは塗布した後に大気中あるいは酸素を２
０〜４０％程度含む気流中で焼成されて内部に酸化膜が
生成されており、通気率が４．０×１０＾−＾３ａｎ・
ｍＬ／ｃｍ＾２・ｓｅｃ・ｃｍＨ＿２Ｏ以下であること
を特徴とする耐酸化性のＳｉＣ製容器。It is a SiC container made of recrystallized SiC, and there is Si inside.
After impregnating or coating the pores with a substance containing 2 to 15% of
It is fired in an air flow containing about 0 to 40%, and an oxide film is generated inside, and the air permeability is 4.0 x 10^-^3an.
An oxidation-resistant SiC container characterized in that it is mL/cm^2・sec・cmH_2O or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32623888A JPH02172879A (en) | 1988-12-26 | 1988-12-26 | Oxidation resistant vessel made of sic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32623888A JPH02172879A (en) | 1988-12-26 | 1988-12-26 | Oxidation resistant vessel made of sic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02172879A true JPH02172879A (en) | 1990-07-04 |
Family
ID=18185535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32623888A Pending JPH02172879A (en) | 1988-12-26 | 1988-12-26 | Oxidation resistant vessel made of sic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02172879A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002040423A1 (en) * | 2000-11-17 | 2002-05-23 | Ngk Insulators,Ltd. | Silicon carbide based porous article and method for preparing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62122212A (en) * | 1985-11-22 | 1987-06-03 | Toshiba Ceramics Co Ltd | Jig for thermal treatment of semiconductor |
-
1988
- 1988-12-26 JP JP32623888A patent/JPH02172879A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62122212A (en) * | 1985-11-22 | 1987-06-03 | Toshiba Ceramics Co Ltd | Jig for thermal treatment of semiconductor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002040423A1 (en) * | 2000-11-17 | 2002-05-23 | Ngk Insulators,Ltd. | Silicon carbide based porous article and method for preparing the same |
| JP2002154882A (en) * | 2000-11-17 | 2002-05-28 | Ngk Insulators Ltd | Silicon carbide porous body and method for producing the same |
| US6777114B2 (en) | 2000-11-17 | 2004-08-17 | Ngk Insulators, Ltd. | Silicon carbide-based porous body and process for production thereof |
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