JPH0217606A - Glazed resistance paste and hybrid integrated circuit device - Google Patents

Abstract

PURPOSE:To obtain a paste which can be fired within a non-oxidation environment achieving combination with a Cu wiring conductor by using vehicle containing Al powder, glass powder containing B2O3, and an organic binder. CONSTITUTION:Vehicle containing Al powder, glass powder firing B2O3, and an organic binder is used. The glass powder containing the B2O3 consists of B2O3 and a metal oxide which is difficult to be metallized when it is fired within a non-oxiding environment and the flexibility point ranges from 500 to 800 deg.C. The metal oxide contains one of Ta, Nb, V, W, Mo, Zr and Ti. A resistance paste is produced by this glazed resistance material and a vehicle where a resin binder is dissolved in a solvent, it is printed on a ceramic substrate, and it is fired at 850 to 950 deg.C within a non-oxidizing environment to obtain a resistor with practical characteristics.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a glazed resistor paste for forming thick film resistors by firing in a non-oxidizing atmosphere. By using this glaze resistor pasteler, base metal wiring conductors such as Cu wiring conductors and thick film resistors can be formed on the same ceramic substrate.

Conventional technology Conventionally, in the field of thick film hybrid 10, wiring conductors are
Mug-based noble metal conductor pastes such as , MugPtl, and MugPt were used for the resistors, and RuO2-based resistance pastes were used for the resistors, respectively, and circuits were formed by an in-air firing method. (For example, "Thick Film IC Technology" Japan Microelectronics Association, Published by Kogyo Kenkyukai, No. 1, Title of Invention Glazed Resistance Paste and Hybrid Integrated Circuit Device 2, Claims (1) Contains Al powder, B2O3 glass powder,
and a vehicle containing an organic binder, and 3.
The glass powder containing B2O5 is composed of B2O5 and a metal oxide that is difficult to metallize when fired in a non-oxidizing atmosphere, and has a softening point in the range of SOO to 800°C, and has a softening point of SOO to 800°C. The oxide is Ta.

A glaze resistance paste comprising at least one oxide of Nb, V, W, Mo, Zr, and Ti.

(2) Aluminum silicide, chromium silicide, cobalt silicide,
Zirconium silicide, tungsten silicide, mental silicide,
At least one of titanium silicide, niobium silicide, nickel silicide, vanadium silicide, manganese silicide, and molybdenum silicide
A glaze resistance paste according to claim 1, further comprising added seeds.

(3) AJ205. gi02. MgO,5i5
N4. B.N., A.I.M.

(Pages 26 to 34) Problems to be Solved by the Invention Recently, in the field of thick-film hybrid ICs, there has been an increasing demand for high-density circuits and high-speed digital circuits. However, conventional Ag-based wiring conductors have problems with migration and circuit impedance, and cannot fully satisfy this demand. Therefore, thick-film hybrid ICs using Cu wiring conductors are seen as promising, but since Cu wiring conductors oxidize when fired in air, resistors used for Cu wiring conductors must be fired in a non-oxidizing atmosphere. must be formed. A glaze resistance paste that satisfies these conditions and has practical characteristics has not yet been developed.

Therefore, it is an object of the present invention to provide a glaze resistance paste that can be fired in a non-oxidizing atmosphere and can be combined with Cu wiring conductors.

Means for Solving the Problems To achieve the above object, the glaze resistance paste of the present invention consists of a vehicle containing mug powder, glass powder containing B2O5, and an organic binder.

Function: A resistance paste is made of the glaze resistance material having the above composition and a vehicle in which a resin binder is dissolved in a solvent. This is printed on a ceramic substrate and heated to 850~850°C in a non-oxidizing atmosphere.
By firing at 950'C, a resistor having practically usable characteristics can be obtained.

Therefore, a thick film resistor can be formed on a ceramic substrate on which a base metal conductor such as Cu is formed.

Example (Example 1) Next, a glaze resistance paste according to an example of the present invention will be described. Glasses containing B2O3 include Glassman (composition 820540.O weight percent, B&0
30. O weight percent, 5i028.0 weight percent, TIL2058.0 weight percent, he2os
e, O heavy! Haase7), Cao4. .

Weight percent, MgO2,O weight percent, 5r0
2. O weight percent with a softening point of approximately e o O
'C' was used.

A mixture of Garasujin and Mue in the proportions shown in Table 1 was kneaded with a vehicle (acrylic resin dissolved in terpineol) to form a resistance paste. This resistance paste was printed using a 250-mesh screen on a 96-thium oxide substrate with a Cu thick film conductor as an electrode, and heated at 120°C.
After drying at a temperature of 900° C., the resistor was fired through a tunnel furnace heated to a maximum temperature of 900° C. under a nitrogen gas purge to form a resistor. Table 1 shows the sheet resistance value of this resistor at 26°C and the temperature coefficient of resistance measured between 26°C and 126°C. Load life characteristics (160mW/g
2 load power is applied for 1.6 hours and removed for 0.6 hours at an ambient temperature of 70°C, evaluated by the resistance change rate after 1000 hours), moisture resistance characteristics (ambient temperature of 86°C)
Evaluated by the rate of change in resistance after 1000 hours in a relative humidity of 86%), thermal shock characteristics (3 at an ambient temperature of -65°C)
(Evaluated by the rate of change in resistance value after 1000 hours after being left for 0 minutes and then left for 30 minutes at an ambient temperature of 126° C.) The rate of change in resistance value was within ±1% in all cases.

(Left below) (Example 2) Next, as a glass containing B2O5, glass B (B20535), which has a different composition from the glass glass shown in Example 1
．． O weight percent, B&035. OH percent, 5
iOa, o weight percent, A/205 e, o weight par-4=/), Ta2052.0 weight percent, Nb
2O52.0 weight percent), V2O52.0 weight percent, wo22.0 weight percent, MOO2
2,0 weight percent, ZrO2,2,0 weight percent, TiO2,2,0 weight percent, and MgO2,0 weight percent, and had a softening point of about 660°C).

A mixture of glass B and mulch in the proportions shown in Table 2 was kneaded with a vehicle (acrylic resin dissolved in terpineol) to form a resistance paste. Using this resistor paste in the same manner as in Example 1, a resistor was formed on a 96 thialumina substrate. Table 2 shows the sheet resistance value of this resistor at 26°C and the temperature coefficient of resistance measured between 25°C and 126°C. The load life characteristics, moisture resistance characteristics, and thermal shock characteristics were measured in the same manner as in Example 1, and the rate of change in resistance value was all within ±1%.

(The following is a blank space) (Example 3) A mixture of Glass Man 11 titanium silicide shown in Example 1 in the proportions shown in Table 3 was kneaded with a vehicle (acrylic resin dissolved in terpineol), It was made into a resistance paste. Using this resistor paste in the same manner as in Example 1, a resistor was formed on a 96 thialumina substrate. The sheet resistance value of this resistor at 26°C, 25°C and 125°C
The temperature coefficients of resistance measured between temperatures in °C are shown in Table 3.

The load life characteristics, moisture resistance characteristics, and thermal shock characteristics were measured in the same manner as in Example 1, and the rate of change in resistance value was all within ±1 inch.

(The following is a blank space) (Example 4) Glass B shown in Example 2, Mu e1 metal silicide A (A
eSi2, CrSi2, CoSi2,
ZrSi2, WSi2.

TaSi2, TiSi2, NbSi2,
NiSi2, VSi2MnSi2, MoS
i2 in equal amounts) in the proportions shown in Table 4 was kneaded with a vehicle (acrylic resin dissolved in terpineol) to form a resistance paste. Using this resistor paste in the same manner as in Example 1, a resistor was formed on a 96 thialumina substrate. Table 4 shows the sheet resistance value of this resistor at 26°C and the temperature coefficient of resistance measured between 26°C and 126°C. load life characteristics,
The moisture resistance properties and thermal shock properties were measured in the same manner as in Example 1, and the rate of change in resistance value was within ±1%.

(The following is a blank space) (Example 5) A mixture of Garasujin, Mul, and Si3N4 shown in Example 1 in the proportions shown in Table 6 was kneaded with a vehicle (acrylic resin dissolved in terpineol). It was made into a resistance paste. Using this resistor paste in the same manner as in Example 1, a resistor was formed on a 96q6 alumina substrate. The sheet resistance value of this resistor at 26°C and 25°C and 1
The temperature coefficient of resistance measured between temperatures of 26°C is shown in Table 6. The load life characteristics, moisture resistance characteristics, and thermal shock characteristics were measured in the same manner as in Example 1, and the rate of change in resistance value was all within ±1 inch.

(The following is a blank space) (Example 6) 1 ml of glass B shown in Example 2, inorganic filler A (
Al2O3, 5i02, MgO, 5i5N4
, B.N.

A mixture of equal amounts of MulN and SiC) was mixed into the sixth
The mixture in the proportions shown in the table was kneaded with a vehicle (acrylic resin dissolved in terpineol) to form a resistance paste. Using this resistor paste in the same manner as in Example 1, a resistor was formed on an ea% alumina substrate. The sheet resistance value of this resistor at 26°C and 26°C and 12°C
The temperature coefficient of resistance measured between temperatures of 5°C is shown in Table 6. The load life characteristics, moisture resistance characteristics, and thermal shock characteristics were measured in the same manner as in Example 1, and the rate of change in resistance value was all within ±1%.

(Left below) As shown in the above examples, thick film resistors with excellent characteristics can be obtained by using the glazed resistor paste according to the present invention. This is because when the glaze resistance paste according to the present invention is fired at 860 to 950'C,
B20 in glass. As a result of the interaction between the metal borides, metal silicides, metal oxides, and metal oxides, metal borides, metal silicides, metal oxides, and HOS are generated in the glass network, creating a stable and fine conductive path network and a highly weather-resistant glass network. This is due to the formation of

Effects of the Invention As is clear from the above description, the glaze resistor paste according to the present invention can form a practically usable resistor by firing in a non-oxidizing atmosphere. A circuit can be formed together with wiring conductors.

Therefore, the present invention realizes a Cu wiring thick film hybrid IC and contributes to higher density and higher speed digitalization of the thick film hybrid 10.

Claims (4)

[Claims] (1) Al powder, glass powder containing B_2O_3,
and a vehicle containing an organic binder, and the above B_
The glass powder containing 2O_3 is composed of B_2O_3 and a metal oxide that is difficult to metallize when fired in a non-oxidizing atmosphere, and has a softening point in the range of 500 to 800°C, and the metal oxide are Ta, Nb, V, W,
A glaze resistance paste characterized by containing at least one of Mo, Zr, and Ti oxides. (2) Aluminum silicide, chromium silicide, cobalt silicide,
Zirconium silicide, tungsten silicide, tantalum silicide,
At least one of titanium silicide, niobium silicide, nickel silicide, vanadium silicide, manganese silicide, and molybdenum silicide
A glaze resistance paste according to claim 1, further comprising added seeds. (3) Al_2O_3, SiO_2, MgO, Si_3
The glaze resistance paste according to claim 1, wherein at least one of N_4, BN, AlN, and SiC is added. (4) A hybrid integrated circuit device comprising a resistor made of the glazed resistor paste according to claim 1 formed on a substrate.