JPH02184568A - Porcelain composition for voltage-nonlinear resistance element - Google Patents

Porcelain composition for voltage-nonlinear resistance element

Info

Publication number
JPH02184568A
JPH02184568A JP1001659A JP165989A JPH02184568A JP H02184568 A JPH02184568 A JP H02184568A JP 1001659 A JP1001659 A JP 1001659A JP 165989 A JP165989 A JP 165989A JP H02184568 A JPH02184568 A JP H02184568A
Authority
JP
Japan
Prior art keywords
voltage
porcelain
porcelain composition
resistance
nonlinear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1001659A
Other languages
Japanese (ja)
Inventor
Tatsuya Suzuki
達也 鈴木
Yasunobu Yoneda
康信 米田
Kazuyoshi Nakamura
和敬 中村
Yukio Sakabe
行雄 坂部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP1001659A priority Critical patent/JPH02184568A/en
Publication of JPH02184568A publication Critical patent/JPH02184568A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To obtain the subject porcelain composition having a high voltage- nonlinear coefficient, a high resistance to surging and a small change thereof with time by mixing a specified oxidizing agent into a specified semiconductive porcelain consisting of an Sr-Ca-Ti-O-based compound as the main component. CONSTITUTION:An objective porcelain composition prepared by mixing a semiconductive porcelain composed of 98.0-99.9mol% formula l (0<=x<=0.25; 0.996<=y<=1.003) and 0.1-2.0mol% oxide of Nb, W, Ta, In, Y or a rare earth element with 0.01-2.0wt.% formula II (M is one or more of monovalent metallic element; Y>1). By using the above-mentioned composition, the subject porcelain composition for a voltage-nonlinear resistance element having an excellent resistance to surging after application of 5000A/cm<2> surge voltage, a high nonlinear coefficient (alpha) higher than 15 and a small change of dielectric loss with time under high temperatures and high humidity, i.e. excellent in humidity- resistant properties is obtained.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 この発明は(Sr+−xca+t)TiyOsを主成分
とする電圧非直線抵抗体を得るための磁器組成物に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a ceramic composition for obtaining a voltage nonlinear resistor containing (Sr+-xca+t)TiyOs as a main component.

〈従来の技術とその課題〉 電子機器で発生する異常電圧、ノイズ等を吸収もしくは
除去するために種々のバリスタが使用されている。
<Prior art and its problems> Various varistors are used to absorb or remove abnormal voltages, noise, etc. generated in electronic devices.

粒界酸化型電圧非直線抵抗素子では粒界を酸化すること
によってバリスタ特性を得ている。そして酸化方法とし
ては、空気中酸化あるいはNaaO等の酸化物の粒界拡
散の方法が知られているが、前者の方法ではバリスタ特
性は総体的に低(、また後者の方法では静電容量が大で
あること、非直線係数(α)が大であること、あるいは
サージ耐量が大きいこと、などの何れかの特性を満足さ
せることはあっても、これら特性のすべてを一つの組成
物で満足させるものはなかった。
In a grain boundary oxidation type voltage nonlinear resistance element, varistor characteristics are obtained by oxidizing the grain boundaries. As oxidation methods, air oxidation or grain boundary diffusion of oxides such as NaaO are known, but the former method generally results in poor varistor characteristics (and the latter method results in poor capacitance). Although it may be possible to satisfy any of the following characteristics, such as a large size, a large nonlinear coefficient (α), or a large surge resistance, it is impossible to satisfy all of these characteristics with a single composition. There was nothing to do.

チタン酸ストロンチウムを主成分とする電圧非直線性抵
抗体は異常電圧、ノイズを吸収するバリスタとしての機
能のほか、コンデンサとしての機能を有している。
A voltage nonlinear resistor whose main component is strontium titanate functions not only as a varistor that absorbs abnormal voltage and noise, but also as a capacitor.

この種の材料としては、特開昭58−16504号公報
、特開昭58−91602号公報に開示されているよう
に、SrTi0m、あるいはSr+−xCaxTiOs
 (0,01≦x≦0.5)を主成分とし、これに半導
体化のための成分としてNb*Os 、Ta1ls 、
 WOs、La1es 、Cent、Nd!O,、Y2
O,などの金属酸化物およびサージ劣化防止のためのN
a1Oを含有したものからなっている。
Examples of this type of material include SrTi0m or Sr+-xCaxTiOs, as disclosed in Japanese Patent Application Laid-Open No. 58-16504 and Japanese Patent Application Laid-open No. 58-91602.
(0,01≦x≦0.5) as the main component, and Nb*Os, Ta1ls,
WOs, La1es, Cent, Nd! O,,Y2
Metal oxides such as O, and N to prevent surge deterioration
It consists of something containing a1O.

しかしながら、これらの組成でも大きな非直線係数αを
得ながら、サージが印加されてもαおよびバリスタ電圧
の劣化の小さいものが得られないという欠点があった。
However, even with these compositions, although a large nonlinear coefficient α can be obtained, it is not possible to obtain a structure with small deterioration of α and varistor voltage even when a surge is applied.

〈発明の目的〉 この発明は上記に鑑みて、任意のバリスタ電圧を持ち、
かつ高い非直線係数(α)、および高いサージ耐量の特
性を有し、これら特性の経時変化の少ない電圧非直線抵
抗体用の磁器組成物を提供することを目的とするもので
ある。
<Object of the invention> In view of the above, this invention has an arbitrary varistor voltage,
Another object of the present invention is to provide a ceramic composition for a voltage nonlinear resistor, which has characteristics of a high nonlinear coefficient (α) and high surge resistance, and has little change in these characteristics over time.

〈課題を解決するための手段〉 即ち、この発明は上記した問題点を解決するためになさ
れたものであって、 (Sr+−xcax) Tiy Os (但し2O≦x
≦0,25.0、996≦y≦1.003 )が98.
0〜99.9モル%と、Nbs Ws Ta−In、Y
あるいは希土類元素の酸化物0.1〜2.0モル%とか
らなる半導体磁器にMJ・YSiOt(但し、Mは1価
の金属元素のうち少な(とも1種、Yは1より大) が0.01〜2.0重量%含有されてなる電圧非直線抵
抗体用磁器組成物を提供するものである。
<Means for Solving the Problems> That is, this invention was made to solve the above-mentioned problems, and (Sr+-xcax) Tiy Os (provided that 2O≦x
≦0, 25.0, 996≦y≦1.003) is 98.
0 to 99.9 mol%, Nbs Ws Ta-In, Y
Alternatively, semiconductor porcelain consisting of 0.1 to 2.0 mol% of rare earth element oxides may be made of MJ/YSiOt (where M is a small amount of monovalent metal elements (both are 1 type and Y is greater than 1) and is 0. The present invention provides a ceramic composition for a voltage nonlinear resistor containing .01 to 2.0% by weight.

く作用〉 この発明で主成分として用いる(Sr+−xCa、)T
i。
(Sr+-xCa,)T used as the main component in this invention
i.

03において、yの量を0.996〜1.003の範囲
とするのは、yが1.000未満〜0.996の範囲で
はサージ耐量が改善され、一方yが1.000〜1.0
03の範囲では特性が安定し、バラツキが小さくなると
いう効果が得られるからである。
In 03, the reason why the amount of y is set in the range of 0.996 to 1.003 is that the surge resistance is improved when y is in the range of less than 1.000 to 0.996, whereas the surge resistance is improved when y is in the range of 1.000 to 1.0.
This is because within the range of 0.03, the characteristics are stable and variations are reduced.

また、(Sr+−xCaJ TiyO5において、Xを
0≦x≦0.25とするのは、Ca量が0.25を越え
ると、サージ耐量が低下して好ましくないためであり、
半導体化剤としてのNb%W、Ta%In、 Yあるい
は希土類元素の酸化物の量を0.1〜2.0モル%とす
るのはこれらの酸化物が0モル%ではバリタス特性を示
さず、2.0モル%を越えるとサージ耐量が低下する。
Furthermore, in (Sr+-xCaJ TiyO5, X is set to 0≦x≦0.25 because if the Ca amount exceeds 0.25, the surge resistance decreases, which is not preferable.
The reason why the amount of Nb%W, Ta%In, Y or rare earth element oxide as a semiconductor agent is set to 0.1 to 2.0 mol% is because these oxides do not exhibit Baritas characteristics at 0 mol%. , when it exceeds 2.0 mol%, the surge resistance decreases.

また酸化剤として用いるM2O・Y 5if2で表わさ
れる化合物の量が0.01重量%になると、バリスタ電
圧および非直線係数が小さくなり、2.0重量%を越え
る場合はサージ耐量が低下する。
Further, when the amount of the compound represented by M2O.Y 5if2 used as an oxidizing agent becomes 0.01% by weight, the varistor voltage and nonlinear coefficient decrease, and when it exceeds 2.0% by weight, the surge resistance decreases.

〈実施例〉 以下この発明を実施例により詳細に説明する。<Example> The present invention will be explained in detail below with reference to Examples.

第1表に示す組成比(モル%)となるように母材料と半
導体化剤としてSrC0m 、’riOa、 Ca01
Y203、Lag’s 、 Era’sの各原料粉末を
秤量、配合し、湿式で混合して乾燥した後、1150℃
で2時間仮焼した。
SrC0m, 'riOa, Ca01 were used as the base material and the semiconducting agent so as to have the composition ratio (mol%) shown in Table 1.
The raw material powders of Y203, Lag's, and Era's were weighed, blended, mixed wet, and dried at 1150°C.
It was calcined for 2 hours.

次いで粉砕後、酢酸ビニル系樹脂を5重量%添加して得
られた造粒物を1ton/ cm”の圧力で直径10m
mψ、1.5mm厚のペレット状に成形した。
After pulverization, the granules obtained by adding 5% by weight of vinyl acetate resin were pulverized to a diameter of 10 m at a pressure of 1 ton/cm.
It was molded into a pellet having a thickness of 1.5 mm.

得られた成形体を空気中で11000℃で2時間焼成し
た後、H−/ Ni= 1/loo  (vol比)の
混合ガス雰囲気中で1450℃、2時間焼成して半導体
磁器を得た。
The obtained molded body was fired in air at 11000°C for 2 hours, and then fired at 1450°C for 2 hours in a mixed gas atmosphere of H-/Ni=1/loo (vol ratio) to obtain semiconductor porcelain.

得られた半導体磁器の表面に、第1表に示したアルカリ
けい酸塩をユニット材の重量に対して0.5重量%塗布
して空気中で1200℃で2時間熱処理した。
The alkali silicate shown in Table 1 was applied to the surface of the obtained semiconductor ceramic in an amount of 0.5% by weight based on the weight of the unit material, and heat treated in air at 1200° C. for 2 hours.

かくして得られた磁器ユニットの対向面に銀電極を設け
て電圧非直線性抵抗体素子を得、該素子のバリスタ電圧
V1%非直線係数α、サージ電圧印加による■1および
αの変化率Δ■+、Δα等の電気的特性を調べたところ
第1表に示す結果が得られた。
A voltage nonlinear resistor element was obtained by providing a silver electrode on the facing surface of the ceramic unit thus obtained, and the varistor voltage V1% nonlinear coefficient α of the element, the rate of change of ■1 and α due to the application of a surge voltage Δ■ When the electrical characteristics such as + and Δα were investigated, the results shown in Table 1 were obtained.

なお、表中の試料魚に*印を付したものはこの発明の請
求範囲外である。
In addition, sample fish in the table marked with * are outside the scope of the claims of this invention.

また、第1表中の試料No、 2で得られたこの発明の
電圧非直線抵抗素子とSro、 5ocao、 *oT
iOs、99.0モル%、Y2O.0.5モル%、Na
zQ O,5モル%からなる従来の電圧非直線抵抗素子
とを60℃、相対湿度(R)I) 95%中に放置し、
渦中での誘電損失の経時変化を調べたところ、第1図の
結果が得られ、この発明の磁器組成物によるものが高温
高温中での耐湿性において非常に優れていることが認め
られた。
In addition, the voltage nonlinear resistance element of the present invention obtained with Sample No. 2 in Table 1 and Sro, 5ocao, *oT
iOs, 99.0 mol%, Y2O. 0.5 mol%, Na
A conventional voltage nonlinear resistance element consisting of 5 mol % of zQO was left at 60°C and a relative humidity (R)I) of 95%,
When the change in dielectric loss in the vortex over time was investigated, the results shown in FIG. 1 were obtained, and it was recognized that the ceramic composition of the present invention has excellent moisture resistance at high temperatures.

〈発明の効果〉 以上説明したように、この発明によれば5000A/c
m”のサージ電圧印加後のサージ耐量にすぐれ、非直線
係数(α)がα>15と高い値が得られ、かつ高温高湿
中における誘電損失の経時変化が小さい、即ち耐湿特性
にすぐれた電圧非直線抵抗体用の磁器組成物が得られる
のである。
<Effects of the Invention> As explained above, according to this invention, 5000A/c
It has excellent surge resistance after applying a surge voltage of m'', has a high non-linear coefficient (α) of α>15, and has small changes in dielectric loss over time in high temperature and high humidity, that is, has excellent moisture resistance. A ceramic composition for a voltage nonlinear resistor is obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の磁器組成物を用いた電圧非直線抵抗
体の高温高温中での誘電損失の経時変化を示す線図であ
る。
FIG. 1 is a diagram showing the change over time in dielectric loss of a voltage nonlinear resistor using the ceramic composition of the present invention at high temperatures.

Claims (1)

【特許請求の範囲】 (Sr_1_−_xCa_x)Ti_yO_3(但し、
0≦x≦0.25、0.996≦y≦1.003)が9
8.0〜99.9モル%と、Nb、W、Ta、In、Y
あるいは希土類元素の酸化物0.1〜2.0モル%とか
らなる半導体磁器にM_2O・YSiO_2(但し、M
は1価の金属元素のうち少なくとも1種、Yは1より大
) が0.01〜2.0重量%含有されてなる電圧非直線抵
抗体用磁器組成物。
[Claims] (Sr_1_-_xCa_x)Ti_yO_3 (However,
0≦x≦0.25, 0.996≦y≦1.003) is 9
8.0 to 99.9 mol%, Nb, W, Ta, In, Y
Alternatively, M_2O・YSiO_2 (however, M_2O・YSiO_2
A ceramic composition for a voltage nonlinear resistor, which contains 0.01 to 2.0% by weight of at least one monovalent metal element, and Y is greater than 1.
JP1001659A 1989-01-06 1989-01-06 Porcelain composition for voltage-nonlinear resistance element Pending JPH02184568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1001659A JPH02184568A (en) 1989-01-06 1989-01-06 Porcelain composition for voltage-nonlinear resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1001659A JPH02184568A (en) 1989-01-06 1989-01-06 Porcelain composition for voltage-nonlinear resistance element

Publications (1)

Publication Number Publication Date
JPH02184568A true JPH02184568A (en) 1990-07-19

Family

ID=11507651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1001659A Pending JPH02184568A (en) 1989-01-06 1989-01-06 Porcelain composition for voltage-nonlinear resistance element

Country Status (1)

Country Link
JP (1) JPH02184568A (en)

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