JPH02192460A - Dielectric porcelain composition for microwave - Google Patents

Dielectric porcelain composition for microwave

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Publication number
JPH02192460A
JPH02192460A JP1099552A JP9955289A JPH02192460A JP H02192460 A JPH02192460 A JP H02192460A JP 1099552 A JP1099552 A JP 1099552A JP 9955289 A JP9955289 A JP 9955289A JP H02192460 A JPH02192460 A JP H02192460A
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JP
Japan
Prior art keywords
weight
coo
added
sintering
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1099552A
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Japanese (ja)
Inventor
Juichi Takahashi
寿一 高橋
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority to JP1099552A priority Critical patent/JPH02192460A/en
Publication of JPH02192460A publication Critical patent/JPH02192460A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a dielectric porcelain for microwave having improved Q- value by firing at relatively low temperature and for short time, by adding CoO and Nb2O5 to TiO2-ZrO2-SnO2 based substance of a specific composition. CONSTITUTION:A substance having a composition expressed by the formula (0.30<=x<=0.60; 0.25<=y<=0.60; 0.025<=z<=0.20) for mole fraction of x, y and z (x+y+z=1) is used as principal component and <=5wt.% CoO or alphaCoO+betaCo3O4 (0<=alpha<=1; 0<=beta<=1; alpha+beta=1) and <=10wt.% Nb2O5 or Ta2O5 are contained as additives. Further, <=2wt.% Ni2O3 or Sb2O3 may be contained as an additive other than above-mentioned additives to especially improve sintering ability and perform sintering of porcelain at relatively low temperature for short time.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本発明はマイクロ波領域で共振器材料等に使用される誘
電体磁器組成物に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a dielectric ceramic composition used as a resonator material in the microwave region.

(ロ)従来の技術 近年、マイクロ波領域に於いて誘電体磁器が共振器やM
IC(マイクロ波集積回路)基板等の材料として広く使
用されている。
(b) Conventional technology In recent years, dielectric ceramics have been used as resonators and M
It is widely used as a material for IC (microwave integrated circuit) substrates, etc.

従来、この種の誘電体磁器材料として例えば特開昭61
−259405号公報[HOIB  3/12]で提案
されているT i Os −Z r Ot −S nO
,−ZnO−N 1o−NbxOsの組成物がある。
Conventionally, as this type of dielectric porcelain material, for example, JP-A-61
-T i Os -Z r Ot -S nO proposed in Publication No. 259405 [HOIB 3/12]
, -ZnO-N 1o-NbxOs.

しかしながら、この従来例の磁器材料では上記公報中に
記載されているように、そのQ値が7GH2−で高々9
000程度であり、周波数が更に高くなるとQ値は低下
するので、8GHz以上の周波数帯では充分なQ値が得
られないと言う欠点があった。
However, as described in the above-mentioned publication, this conventional porcelain material has a Q value of 7GH2-, which is at most 9.
000, and as the frequency becomes higher, the Q value decreases, so there was a drawback that a sufficient Q value could not be obtained in a frequency band of 8 GHz or higher.

(ハ)発明が解決しようとする課題 マイクロ波帯の中でも8GHz以上のより高い周波数で
使用する場合はQ値は少しでも高い方が良く、Q値が高
くなることによって誘電体での発熱を小さくでき、また
、共振のピークも鋭くなる。
(c) Problems to be solved by the invention When using at a higher frequency of 8 GHz or higher in the microwave band, it is better to have a higher Q value, even if only a little, and by increasing the Q value, the heat generation in the dielectric can be reduced. In addition, the resonance peak becomes sharper.

したがって、本発明で解決すべき第1の課題はマイクロ
波誘電体磁器のQ値を一段と向上させることであり、本
発明で解決すべき第2の課題はそのようなit体磁器を
できるだけ低温・短時間の焼結によって実現することで
ある。
Therefore, the first problem to be solved by the present invention is to further improve the Q value of microwave dielectric porcelain, and the second problem to be solved by the present invention is to make such IT body porcelain as low temperature as possible. This is achieved by short-time sintering.

(ニ)課題を解決するための手段 本発明の誘電体磁器組成物は、モル分率をX、Y、z 
(x+y+z=1)としたとき組成式がX・T io*
−y−Z rot−z−5nOt (但し0.30≦X
≦0.60.0.25≦y≦0.60.0.025≦2
≦0.20)で表わされる物質を主成分とし、これに添
加物としてCooまたはαCoo+βCo504(ただ
し、0≦α≦1.0≦β≦1、a+β=1)を5重量%
以下でNb、O,またはTa曹O3を10重量%以下含
有させる。
(d) Means for Solving the Problems The dielectric ceramic composition of the present invention has molar fractions of X, Y, and z.
When (x+y+z=1), the composition formula is X・Tio*
-y-Z rot-z-5nOt (0.30≦X
≦0.60.0.25≦y≦0.60.0.025≦2
≦0.20) as the main component, and 5% by weight of Coo or αCoo+βCo504 (0≦α≦1.0≦β≦1, a+β=1) as an additive.
Below, Nb, O, or Ta carbon dioxide O3 is contained in an amount of 10% by weight or less.

また、特にその焼結性を向上させ比較的低温且つ短時間
で磁器の焼結を行なわせるために、添加物として、上記
添加物の他に更にNi1OiまたはSb*Osを2重量
%以下追加含有させるようにした。
In addition, in order to particularly improve the sinterability and sinter the porcelain at a relatively low temperature and in a short time, in addition to the above additives, Ni1Oi or Sb*Os is additionally added in an amount of 2% by weight or less. I tried to let him do it.

(ホ)作用 上記組成の誘電体磁器は、Nb*OsまたはTa、0.
の添加によってQ値が高くなり、CoOまたはαCoO
+βCo*04更にはNi、0.やsbオ0、の添加に
よって焼結性が向上する。
(E) Effect The dielectric ceramic having the above composition may be Nb*Os or Ta, 0.
The Q value increases with the addition of CoO or αCoO
+βCo*04 and further Ni, 0. The sinterability is improved by the addition of or sbO0.

(へ)実施例 先ず、本発明の第1の実施例について説明する。この実
施例では、最初に誘電体磁器材料として高純度のT i
 O*、Z r Oを及びS n O!をモル分率でこ
の順に0.51 : 0.42 : 0.07になるよ
う秤量し、これに第1表に示す各重量%のCoO及びN
b、o、を添加し5〜10時間湿時間台する。次にこれ
を脱水、乾燥し、得られた粉末を1000〜1200℃
で1〜2時間予備焼結を行なう。そして、この予備焼結
物に対して20〜60時間湿式粉砕を行なう。次にそれ
を脱水、乾燥し、得られた粉末を2000〜3000k
g/cm”ノ圧力をかけて直径10&ll、厚み6閣の
円板に成型する。その後、この成型物の本焼結を空気中
で先の予備焼結時よりも高い温度で数時間行なう。そし
て、最後にこの本焼結によって得る焼結物の厚みが径の
1/2になるように両面研磨を行ない誘電体磁器試料を
得る。
(F) Embodiment First, a first embodiment of the present invention will be described. In this example, we first used high-purity Ti as a dielectric ceramic material.
O*, Z r O and S n O! were weighed so that the molar fraction was 0.51: 0.42: 0.07 in this order, and each weight percent of CoO and N shown in Table 1 was added to this.
Add b, o, and keep wet for 5-10 hours. Next, this is dehydrated and dried, and the obtained powder is heated to 1000-1200℃.
Preliminary sintering is performed for 1 to 2 hours. Then, this pre-sintered product is subjected to wet pulverization for 20 to 60 hours. Next, it is dehydrated and dried, and the resulting powder is 2000~3000k
The molded material is molded into a disc with a diameter of 10 mm and a thickness of 6 mm by applying a pressure of "g/cm".Then, this molded material is sintered in air at a higher temperature than the previous preliminary sintering for several hours.Then, Finally, both sides are polished so that the thickness of the sintered product obtained by this main sintering is 1/2 of the diameter to obtain a dielectric ceramic sample.

このようにして得られた各磁器試料について20℃、7
〜8.5G Hzに於ける誘電率(ε)及びQをハッキ
・コールマン法によって測定した。その結果を第1表に
示す。
For each porcelain sample thus obtained, 20°C, 7
The dielectric constant (ε) and Q at ~8.5 GHz were measured by the Hucki-Coleman method. The results are shown in Table 1.

以下余白 第  1  表 但し、T iO* : 0.51モル、Zn0t;0.
42モル、5nOx:0.07モル また、この第1表中の各試料について+20℃〜+70
℃の範囲で共振周波数の温度係数(Tf)を測定したと
ころ、+5±8以内であった。
Table 1 below is a margin. However, TiO*: 0.51 mol, Zn0t; 0.
42 mol, 5nOx: 0.07 mol Also, for each sample in this Table 1, +20°C to +70°C
When the temperature coefficient (Tf) of the resonant frequency was measured in the range of °C, it was within +5±8.

この第1表から判るように、先ずCoO及びNb、0.
を個別に添加した場合は誘電率(ε)及びQとも余り特
性的な改善は見られない。即ち、C。
As can be seen from Table 1, CoO and Nb, 0.
When these are individually added, neither the dielectric constant (ε) nor the Q characteristic is significantly improved. That is, C.

Oの単独の添加では無添加の場合と比較すると焼結性は
徐々に上がるが、Q値はそれ程高くはならず、5.0重
量%を越えると逆に低下する。また、N b lOsの
単独の添加では非常に焼結性が悪化するが、Cooを同
時に添加すると焼結性が良くなりQ値も非常に高くなる
。しかし、それもNb。
When O is added alone, the sinterability gradually increases compared to when no O is added, but the Q value does not become so high, and on the contrary, when it exceeds 5.0% by weight, it decreases. Further, when NbIOs is added alone, the sinterability deteriorates significantly, but when Coo is added at the same time, the sinterability improves and the Q value becomes extremely high. But that's also Nb.

0、が10重量%を越えると逆に焼結性が悪化する。0 exceeds 10% by weight, conversely, sinterability deteriorates.

次に本発明の磁器組成物の主成分であるTiOt−Zr
Ot−SnOwの組成比率によっても、ε及びQの特性
は変化する。このため、Cooを1゜0重量%、Nb*
Osを2.5重量%それぞれ添加するものとし、TiQ
、、Z r O*及びSnO,の組成比率(モル比)を
種々変えて実験した結果を第2表に示す。
Next, TiOt-Zr which is the main component of the porcelain composition of the present invention
The characteristics of ε and Q also change depending on the composition ratio of Ot-SnOw. For this reason, Coo was added to 1°0% by weight, Nb*
Os is added at 2.5% by weight, and TiQ
Table 2 shows the results of experiments with various composition ratios (molar ratios) of Z r O* and SnO.

第  2  表 但し、CoO:1.0重量%、Nb1Os:2.5重量
% この第2表から明らかなように、Tie、、Zro、、
SnO,の組成比率によりε、Q、Tfが変化す“る。
Table 2 However, CoO: 1.0% by weight, Nb1Os: 2.5% by weight As is clear from this Table 2, Tie, Zro,...
ε, Q, and Tf change depending on the composition ratio of SnO.

そこで、本発明では、この組成比率を先の特許請求の範
囲に記載の範囲に限定しているが、それは次の理由によ
る。即ち、T i O*が0.6モル以上ではTfがプ
ラス側に大きくなり過ぎ、0.3以下ではεが小さくな
る。またZrO,がo、25モル以下ではTfがプラス
側で大きくなり過ぎ、逆に0.6モル以上になるとQ値
が低くなる。更にS n O*が0.025モル以下で
はTfがプラス側で大きくなり、逆に0.2モル以上に
なるとTfがマイナス側で大きくなり過ぎるからである
Therefore, in the present invention, this composition ratio is limited to the range described in the claims above, and this is for the following reason. That is, when T i O* is 0.6 mol or more, Tf becomes too large on the plus side, and when it is 0.3 or less, ε becomes small. Further, if ZrO is less than 25 moles, Tf becomes too large on the positive side, and conversely, if it is more than 0.6 moles, the Q value becomes low. Further, if S n O* is 0.025 mol or less, Tf becomes large on the plus side, and conversely, if S n O* is 0.2 mol or more, Tf becomes too large on the minus side.

したがって、主成分であるT i ol、 Z r O
x及びSnO,を上記第2表から、また、添加物である
Coo及びNb、O,を先の第1表から、それぞれ先の
特許請求項1に記載された範囲に限定することにより、
εが約36〜43でQが約5000〜9600内の誘電
体磁器が自由に得られ、特に8GHzでc=38、Q≧
9000のものが容易に実現できる。
Therefore, the main components T i ol, Z r O
x and SnO from the above Table 2, and the additives Coo, Nb, and O from the above Table 1, by limiting each to the range described in the above patent claim 1,
Dielectric ceramics with ε of about 36 to 43 and Q of about 5000 to 9600 can be freely obtained, especially at 8 GHz when c=38 and Q≧
9000 can be easily realized.

次に、第2の実施例について説明する。Next, a second example will be described.

先の第1実施例においては添加物のひとつとしてCoO
を含有させたが、この種コバルト酸化物にはCoo、C
otOs、CO30+の様に種々のものがあり、通常a
coo+βCo5t−(ただし、0≦a<1、Oくβ≦
1、α+β=1)という形で存在し易く、またこの形の
コバルト酸化物は安価で入手し易い。これに対してCo
o単独のものは高価である。
In the first example above, CoO was used as one of the additives.
However, this type of cobalt oxide contains Coo, C
There are various types such as otOs and CO30+, and usually a
coo+βCo5t- (however, 0≦a<1, Okuβ≦
1, α+β=1), and cobalt oxide in this form is inexpensive and easily available. On the other hand, Co
o It is expensive when used alone.

そこで、第2実施例では、主成分のTie、。Therefore, in the second embodiment, the main component Tie.

Z r Os、Snowはこの順にそれぞれ0.52モ
ル、0.42モル、0.06モルとし、添加物として第
3表に示す各重量%のCoo、acoO+βCOsO4
、N b to s、 T a tOsを含有させて焼
結することにより誘電体磁器を作成するようにした。
Z r Os and Snow were respectively 0.52 mol, 0.42 mol, and 0.06 mol in this order, and Coo, acoO + βCOsO4 of each weight% shown in Table 3 were added as additives.
, N b to s , and Ta t Os were sintered to produce dielectric ceramics.

その際、上記各材料の秤量から仕上げ段階の両面研磨工
程までの各作業は第1実施例と同様に行なわ−れる。
At this time, each operation from weighing the above-mentioned materials to the double-sided polishing step in the finishing stage is performed in the same manner as in the first embodiment.

このようにして得られた各磁器試料について20℃、7
〜8.5GHzに於ける誘電率(ε)及びQをハッキ・
コールマン法によって測定した。その結果を第3表に示
す。
For each porcelain sample thus obtained, 20°C, 7
-Hack the permittivity (ε) and Q at 8.5GHz.
Measured by Coleman method. The results are shown in Table 3.

以下余白 第  3  表 但し、試料魚7〜IOはα= 0.85、β=0.15
、試料Na1l−16はα=0.5、β=0.5、試料
NQI7〜20はα= 0.15、β= 0.85、試
料魚21〜24はα=0、β=1.0、試料瓶25〜2
8はαC0,5、β=0.5 T i O2: 0.52モル、Zr01:0.42モ
ル、SnQ、:o、osモル また、この第3表中の各試料について+20℃〜+70
℃の範囲で共振周波数の温度係数(Tr)を測定したと
ころ+8±10以内であった。
Margin below Table 3 However, for sample fish 7 to IO, α = 0.85, β = 0.15
, for sample Na1l-16, α = 0.5, β = 0.5, for samples NQI7-20, α = 0.15, β = 0.85, for sample fish 21-24, α = 0, β = 1.0. , sample bottle 25-2
8 is αC0,5, β=0.5 T i O2: 0.52 mol, Zr01: 0.42 mol, SnQ: o, os mol Also, for each sample in this Table 3, +20°C to +70
When the temperature coefficient (Tr) of the resonant frequency was measured in the range of °C, it was within +8±10.

第3表から明らかなように、αCoo+βCO30,を
添加した場合(試料魚7〜2g) 、Co。
As is clear from Table 3, when αCoo+βCO30 is added (7 to 2 g of sample fish), Co.

単独のものを添加した場合(試料N11l〜6)と比較
しても特性的に何ら不都合はなく、良好な結果が得られ
た。
Even when compared with the case where only one substance was added (samples N111 to 6), there were no disadvantages in terms of characteristics, and good results were obtained.

また、crcoo+βCoco4の添加量が5.0重量
%を越えると焼結不良を起こし、特性的にも悪くなって
いる。
Furthermore, when the amount of crcoo+βCoco4 added exceeds 5.0% by weight, sintering failure occurs and the characteristics are also deteriorated.

次に本発明の磁器組成物の主成分であるTiO2−Zr
Ot−5nOtの組成比率によっても、C1Q及びTf
の特性は変化する。このため、Co。
Next, TiO2-Zr which is the main component of the porcelain composition of the present invention
Depending on the composition ratio of Ot-5nOt, C1Q and Tf
The characteristics of change. For this reason, Co.

を1.0重量%、NbtOsを2.5重量%添加した場
合と、acoo+βC0,0,((2=β= 0.5)
を1.0重量5、Nb、Osを2.5重量%添加した場
合について、それぞれTi0t、Zr01及び5nO−
の組成比率(モル比)を種々変えて実験した結果を第4
表に示す。
When 1.0% by weight of NbtOs and 2.5% by weight of NbtOs were added, acoo+βC0,0,((2=β=0.5)
Ti0t, Zr01 and 5nO-, respectively, when 1.0% by weight of 5 and 2.5% by weight of Nb and Os were added.
The results of experiments with various composition ratios (molar ratios) of
Shown in the table.

以下余白 第 表 但し、「コバルト酸化物」の欄にAとあるのはaCoO
+βCo504添加を、BとあるのはCo。
In the margin table below, however, A in the "Cobalt oxide" column means aCoO.
+βCo504 addition, B indicates Co.

添加を示す。Indicates addition.

第4表からかるようにTie、、ZrO*、SnO3の
量により特性が変化はするが、Coo単独の添加の場合
と比べてacoo+βC05Oa添加の場合も同様な変
化を示している。
As shown in Table 4, the characteristics change depending on the amounts of Tie, ZrO*, and SnO3, but the addition of acoo+βC05Oa shows similar changes compared to the addition of Coo alone.

?にッて、Cooに代えてacoo+βCo5t。? Then, replace Coo with acoo+βCo5t.

を用いることにより、特性的には何ら遜色はなく、安価
に作成可能となる。
By using , there is no inferiority in terms of characteristics and it can be produced at low cost.

ところで、上記第1および第2実施例に於いて、前述の
本焼結は焼結温度が高い場合(約1500℃)2時間程
度で済むが、焼結温度が比較的低い場合(約1350℃
)では5時間程度必要であった。しかし、焼結炉の耐久
性を考慮すると、焼結はできるだけ低温短時間の方がよ
く、出来れば1350℃で3時間程度で焼結できること
が望ましい。
By the way, in the first and second embodiments, the above-mentioned main sintering takes about 2 hours when the sintering temperature is high (approximately 1500°C), but when the sintering temperature is relatively low (approximately 1350°C)
) required about 5 hours. However, considering the durability of the sintering furnace, it is better to perform the sintering at a low temperature and for a short time, preferably at 1350° C. for about 3 hours.

そこで、先の実施例よりも更に焼結性を高めて上記の蛸
き比較的低温且つ短時間で焼結できるようにした第3園
の実施例を次に説明する。
Therefore, a third embodiment will now be described in which the sinterability is further improved than in the previous embodiments and the above-mentioned octopus can be sintered at a relatively low temperature and in a short period of time.

第3の実施例では、T i O*、ZrO*、SnO2
を主成分とし、CoO及びN b t Osを添加物と
する先の第1実施例の磁器組成物に更に第3の添加物と
してN i ! Osまたは5bsOsを追加含有させ
て焼結することにより誘電体磁器を作成するようにした
。その際、上記各材料の秤量から仕上げ段階の両面研磨
工程までの各作業は第1実施例と同様に行なわれる。
In the third example, T i O*, ZrO*, SnO2
is the main component and CoO and Nb t Os are additives, and Ni! is added as a third additive to the ceramic composition of the first embodiment. A dielectric ceramic was created by additionally containing Os or 5bsOs and sintering it. At this time, each operation from weighing the above-mentioned materials to the double-sided polishing step in the finishing stage is performed in the same manner as in the first embodiment.

これにより得た各磁器試料について、20℃、7〜8.
5GHzに於けるε及びQ値をその各試料の焼結条件と
共に第5表及び第6表に示す。但し、第5表はNime
sを添加した場合、第6表はsblogを添加した場合
であるが、この画表に示す各試料とも主成分のTie、
、Zr0t、SnO,はこの順にそれぞれ0.53モル
、0.40モル、0.07モルとし、他の添加物はCo
oを1.0重量%、Nb。
For each porcelain sample obtained in this way, 20°C, 7-8.
The ε and Q values at 5 GHz are shown in Tables 5 and 6 along with the sintering conditions for each sample. However, Table 5 shows Nime
Table 6 shows the case when sblog was added, but each sample shown in this chart contains the main components Tie,
, Zr0t, and SnO are respectively 0.53 mol, 0.40 mol, and 0.07 mol in this order, and other additives are Co.
1.0% by weight of Nb.

O,を2.5重量%添加している。2.5% by weight of O.

第 表 第 表 この第5表及び第6表或いはこの両図に基づいて描いた
添付図面の特性図から判るように、Ni、0.または5
btO*を添加しない場合は、焼結温度を1400℃以
上にしなければQが9000を越えるものが得られない
が、Ni20 sまたはsb、0.を添加した場合は焼
結温度1350℃でもQが9000以上のものが得られ
ることになる。即ち、N i !03或いは5bsOs
の添加によって焼結性が向上してQ値が大きくなるが、
その効果はNi、01、S b t Os何れも0.5
〜1.0重量%添加したときに大きく、2.0重量%を
越えると逆にQ値が低下するのである。
Table 1 As can be seen from the characteristic diagrams in the attached drawings drawn based on Tables 5 and 6 or both, Ni, 0. or 5
If btO* is not added, a product with Q exceeding 9000 cannot be obtained unless the sintering temperature is set to 1400°C or higher, but Ni20s or sb, 0. When this is added, a product with a Q of 9000 or more can be obtained even at a sintering temperature of 1350°C. That is, N i! 03 or 5bsOs
Although the addition of sinterability improves the sinterability and increases the Q value,
The effect is 0.5 for Ni, 01, and S b t Os.
The Q value is large when added in an amount of ~1.0% by weight, and conversely decreases when added in an amount exceeding 2.0% by weight.

(ト)発明の効果 以上の如く本発明に依れば、8GHz程度のマイクロ波
帯で誘電率(ε)が約38と大きく、且つQ値が従来例
に比較して9000以上と充分高い誘電体磁器を実現で
き、また焼結性が高められることにより上記の如きε値
とQ値を有する誘電体磁器を比較的低温且つ短時間の焼
結によって実現できる。
(G) Effects of the Invention As described above, according to the present invention, a dielectric material having a large dielectric constant (ε) of about 38 in the microwave band of about 8 GHz and a sufficiently high Q value of 9000 or more compared to the conventional example. By sintering at a relatively low temperature and in a short time, it is possible to realize a dielectric ceramic having the above-mentioned ε value and Q value due to the improved sinterability.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明による誘電体磁器の焼結温度とQ値の関係
を示す特性図である。
The drawing is a characteristic diagram showing the relationship between sintering temperature and Q value of dielectric ceramic according to the present invention.

Claims (3)

【特許請求の範囲】[Claims] (1)モル分率をx、y、z(x+y+z=1)とした
時組成式がx・TiO_2−y・ZrO_2−z・Sn
O_2(但し、0.30≦x≦0.60、0.25≦y
≦0.60、0.025≦z≦0.20)で表わされる
物質を主成分とし、これに添加物としてCoOを5重量
%以下でNb_2O_5を10重量%以下含有させてな
るマイクロ波用誘電体磁器組成物。
(1) When the mole fractions are x, y, z (x+y+z=1), the composition formula is x・TiO_2-y・ZrO_2-z・Sn
O_2 (However, 0.30≦x≦0.60, 0.25≦y
≦0.60, 0.025≦z≦0.20) as a main component, and contains as additives CoO of 5% by weight or less and Nb_2O_5 of 10% by weight or less. Body porcelain composition.
(2)モル分率をx、y、z(x+y+z=1)とした
時組成式がx・TiO_2−y・ZrO_2−z・Sn
O_2(但し、0.30≦x≦0.60、0.25≦y
≦0.60,0.025≦z≦0.20)で表わされる
物質を主成分とし、これに添加物としてαCoO+βC
o_3O_4(但し、0≦α≦1、0≦β≦1、α+β
=1)を5重量%以下でNb_2O_5またはTa_2
O_5を10重量%以下含有させてなるマイクロ波用誘
電体磁器組成物。
(2) When the mole fractions are x, y, z (x+y+z=1), the composition formula is x・TiO_2-y・ZrO_2-z・Sn
O_2 (However, 0.30≦x≦0.60, 0.25≦y
≦0.60, 0.025≦z≦0.20) as the main component, and αCoO + βC as additives.
o_3O_4 (however, 0≦α≦1, 0≦β≦1, α+β
= 1) with 5% by weight or less of Nb_2O_5 or Ta_2
A microwave dielectric ceramic composition containing 10% by weight or less of O_5.
(3)前記主成分に添加する添加物として更にNi_2
O_3またはSb_2O_3を2重量%以下追加含有さ
せてなる請求項1または2記載のマイクロ波用誘電体磁
器組成物。
(3) Ni_2 is added as an additive to the main component.
The microwave dielectric ceramic composition according to claim 1 or 2, further comprising 2% by weight or less of O_3 or Sb_2O_3.
JP1099552A 1988-06-20 1989-04-19 Dielectric porcelain composition for microwave Pending JPH02192460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1099552A JPH02192460A (en) 1988-06-20 1989-04-19 Dielectric porcelain composition for microwave

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63-151764 1988-06-20
JP15176488 1988-06-20
JP63-261721 1988-10-18
JP1099552A JPH02192460A (en) 1988-06-20 1989-04-19 Dielectric porcelain composition for microwave

Publications (1)

Publication Number Publication Date
JPH02192460A true JPH02192460A (en) 1990-07-30

Family

ID=26440685

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH02192460A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356843A (en) * 1992-09-10 1994-10-18 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic compositions and dielectric resonators
US5432134A (en) * 1993-09-02 1995-07-11 Korea Institute Of Science And Technology Microwave dielectric ceramic composition
EP0717018A1 (en) 1994-11-22 1996-06-19 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic compositions and dielectric resonators
US6756335B2 (en) 2000-11-20 2004-06-29 Kyocera Corporation Dielectric porcelain and resonator using the same
US6762142B2 (en) 2001-09-26 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic and dielectric device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217697A (en) * 1975-07-31 1977-02-09 Murata Mfg Co Ltd Dielectic porcelain composite to the high frequency purpose
JPS58217465A (en) * 1982-06-08 1983-12-17 株式会社村田製作所 High frequency dielectric ceramic composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217697A (en) * 1975-07-31 1977-02-09 Murata Mfg Co Ltd Dielectic porcelain composite to the high frequency purpose
JPS58217465A (en) * 1982-06-08 1983-12-17 株式会社村田製作所 High frequency dielectric ceramic composition

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356843A (en) * 1992-09-10 1994-10-18 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic compositions and dielectric resonators
US5470808A (en) * 1992-09-10 1995-11-28 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic compositions and dielectric resonators
US5432134A (en) * 1993-09-02 1995-07-11 Korea Institute Of Science And Technology Microwave dielectric ceramic composition
EP0717018A1 (en) 1994-11-22 1996-06-19 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic compositions and dielectric resonators
US5700745A (en) * 1994-11-22 1997-12-23 Matsushita Electric Industrial Co. Ltd. Dielectric ceramic compositions and dielectric resonators
US6756335B2 (en) 2000-11-20 2004-06-29 Kyocera Corporation Dielectric porcelain and resonator using the same
US6762142B2 (en) 2001-09-26 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dielectric ceramic and dielectric device

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