JPH02196086A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPH02196086A JPH02196086A JP1322289A JP1322289A JPH02196086A JP H02196086 A JPH02196086 A JP H02196086A JP 1322289 A JP1322289 A JP 1322289A JP 1322289 A JP1322289 A JP 1322289A JP H02196086 A JPH02196086 A JP H02196086A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- substrate
- producing
- vapor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000007740 vapor deposition Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 単結晶薄膜を使用する総ての電子デバイスに関する。[Detailed description of the invention] (Industrial application field) Concerning all electronic devices using single crystal thin films.
（従来の技術）
蒸着、あるいはスパッターで単結晶薄膜を作る試みは分
子線エピタキシー以外には報告例がほとんど無い。(Prior Art) There are almost no reports of attempts to produce single crystal thin films by vapor deposition or sputtering other than molecular beam epitaxy.
ただ、無定形の基板上えの蒸着で、比較的大きいダレイ
ンが得られたとか、多結晶薄膜のダレインの方向が同じ
にできたなど報告例がいくつかある。However, there are some reports of relatively large duplexes being obtained by vapor deposition on amorphous substrates, and of polycrystalline thin films with the same direction of dulaine.
例えば、１９５７年にＥｖａｎｃｅ ＤｏＭ。For example, in 1957, Evans DoM.
と Ｗｉｌｌｉａｍ Ｈ、、（Ａｃｔａ
、 Ｃｒｙｓｔ、、Ｃａｍｂ、、５ （１９５７）、
り、７３１）は鉄を蒸着した時に、蒸発原子の飛んでき
た方向が＜１．１．１＞軸になるよう鉄の結晶が成長す
ることを見いだしており、最近では東北大学の火見教授
がアルミニュームの高周波スパッター（ＲＦスパッター
）成膜の際に、アルミニューム・ターゲットと基板の間
にバイアス電圧を加えると、強固な薄膜となり、基板に
並行な結晶面は（１，１，１）面になることを報告して
いる。（日経マイクロデバイス、１９８７ １０月）日
新電機もスパッター装置内に補助イオン源を内蔵した装
置を用いてセラミック、金属などのスパッターを行いな
がら、補助イオン源を用いサブストレートの表面をイオ
ンビームで照射してやると、多結晶ではあるが結晶の方
向が特定の方向に配向することを報告している。（日経
産業新聞昭和６２年１０月２０日）
アルミニュームの例では結晶成長面は蒸発原子の飛んで
きた方向に垂直な面で、この面は最稠密の結晶面（１，
１，１）になっている。 鉄の場合には室温では体心立
方であるが、１３００°Ｃ以上の温度では面心立方とな
るので、蒸着薄膜ではやはり結晶成長面は（１，１，１
）となる。and William H., (Acta
, Cryst, , Camb, , 5 (1957),
(731) found that when iron is evaporated, iron crystals grow so that the direction in which the evaporated atoms fly is along the <1.1.1> axis.Recently, Professor Himi of Tohoku University However, when a bias voltage is applied between the aluminum target and the substrate during high-frequency sputtering (RF sputtering) film formation of aluminum, a strong thin film is formed, and the crystal plane parallel to the substrate is (1, 1, 1). It is reported that it will become a surface. (Nikkei Micro Devices, October 1987) Nissin Electric is also sputtering ceramics, metals, etc. using a device with a built-in auxiliary ion source inside the sputtering device, and using the auxiliary ion source to coat the surface of the substrate with an ion beam. It has been reported that when irradiated, the crystals, although polycrystalline, become oriented in a specific direction. (Nikkei Sangyo Shimbun October 20, 1988) In the aluminum example, the crystal growth plane is the plane perpendicular to the direction in which the evaporated atoms fly, and this plane is the most dense crystal plane (1,
1,1). In the case of iron, it is body-centered cubic at room temperature, but becomes face-centered cubic at temperatures above 1300°C, so the crystal growth planes in vapor-deposited thin films are (1, 1, 1
).
はとんどの報告は、多結晶薄膜の膜質の改善を目的にし
たもので、付随的に結晶粒の方向が揃ったとか、大きく
なったとかを報告しているにすぎない。 いずれにして
も、無定形（アモルファス）の基板上に蒸着あるいはス
パッターで単結晶薄膜を成長させたと言う報告は無い。Most of the reports are aimed at improving the film quality of polycrystalline thin films, and only incidentally report that the crystal grains have become aligned in direction or have become larger. In any case, there are no reports of growing a single crystal thin film on an amorphous substrate by vapor deposition or sputtering.
（発明が解決しようとする課題）
従来の技術で、無定形の基板上に蒸着あるいはスパッタ
ーで薄膜を成長させると、蒸発原子の飛んできた方向に
垂直な面がその物質の最稠密な結晶面となるが、飛んで
きた方向を軸にその周りに任意の角度回転した微結晶の
集合にしかならず、単結晶にはならない。(Problem to be Solved by the Invention) When a thin film is grown by vapor deposition or sputtering on an amorphous substrate using conventional techniques, the plane perpendicular to the direction in which evaporated atoms fly is the densest crystal plane of the substance. However, it will only be a collection of microcrystals rotated by an arbitrary angle around the direction in which it flew, and will not be a single crystal.
この回転角度を同じにできるなら、単結晶薄膜は容易に
蒸着で作ることができる。 本発明の目的はこの回転角
度を制御する手段を提供することである。If this rotation angle can be kept the same, a single crystal thin film can be easily produced by vapor deposition. It is an object of the invention to provide means for controlling this angle of rotation.
（課題を解決するための手段およびその作用）一般に結
晶には独立したいくつかの面密度の最も大きい結晶面（
最稠密結晶面）が存在する。(Means for solving the problem and its effects) Generally, crystals have several independent crystal planes with the highest surface density (
(closest crystal plane) exists.
（以後、簡単に最稠密面と呼ぶことにする。）ある一つ
の方向から蒸発原子が飛んでき、基板上に付着すると、
飛んできた方向に垂直な面がこの最稠密面の一つになる
が、この状況では蒸着薄膜の結晶方位は完全に決まらな
い。 飛んできた方向を軸に回転できる自由度が残され
ているからである。(Hereafter, we will simply call it the closest-packed plane.) When evaporated atoms fly from one direction and attach to the substrate,
The plane perpendicular to the flying direction becomes one of the densest planes, but in this situation the crystal orientation of the deposited thin film is not completely determined. This is because it still has the freedom to rotate around the direction in which it flew.
単結晶の場合、最稠密面は相互に決まった位相関係にあ
り、ひとつの最稠密面の方位を決めると、他の最稠密面
の方位は一義的にきまる。In the case of a single crystal, the closest-packed planes have a mutually determined phase relationship, and once the orientation of one closest-packed plane is determined, the orientations of the other closest-packed planes are uniquely determined.
この関係を利用すると、飛んできた方向のまわりの結晶
の自由な回転を防止することができる。Using this relationship, it is possible to prevent the crystal from rotating freely around the direction in which it flew.
基板の同じ場所に二方向から蒸着すると、この二方向に
垂直な面が最稠密面になろうとするが、通常−つの面を
最稠密にしようとすると、もう一つの面は最稠密になら
ず、お互いに競合し結晶粒が大きく発達することはない
。 この結果、膜は非常に微細な結晶の集合となり、光
沢のある鏡面反射面となる。When depositing from two directions on the same location on a substrate, the surfaces perpendicular to these two directions tend to become the most densely packed surface, but normally, if one surface is made to be the most densely packed, the other surface will not be the most densely packed. , they compete with each other and the crystal grains do not develop to a large extent. As a result, the film becomes an aggregation of very fine crystals, resulting in a glossy, mirror-reflecting surface.
しかし、これらの二つの蒸着方向を単結晶の独立した最
稠密面の法線の方向に選ぶと、今まで競合し邪魔しあっ
ていた最稠密面の成長は逆に助は合い、単結晶に成長す
るのが最も安定した成長様式（パターン）となる。However, if these two deposition directions are chosen to be normal to the independent closest-packed planes of the single crystal, the growth of the closest-packed planes, which had competed and hindered each other up until now, will be promoted, and the growth of the single-crystal will increase. This is the most stable growth pattern.
例えば、面心立方格子の場合、ｉｌ、１．１１が最稠密
面なので、これらの面のなす角度は７０５°であり、体
心立方格子の場合、１１，１゜Ｏ）が最稠密面なので、
これらの面のなす角度は６０° ９０°である。For example, in the case of a face-centered cubic lattice, il, 1.11 is the closest-packed plane, so the angle formed by these planes is 705°, and in the case of a body-centered cubic lattice, il, 1.11 is the closest-packed plane, so ,
The angles formed by these surfaces are 60° and 90°.
したがって、蒸着方向の間の角度が上記の関係を満たす
ようにすれば、基板上に所望の方位を持った単結晶を成
長さすことができる。Therefore, if the angle between the deposition directions satisfies the above relationship, a single crystal with a desired orientation can be grown on the substrate.
以上が課題を解決するための手段であり、その作用の説
明である。The above is a means for solving the problem and an explanation of its operation.
なお、基板温度を上げる、あるいは半導体などの場合に
は吸収端より短い波長の光で蒸着面を照射してやるなど
して膜の可塑性を増すと単結晶化が促進される。 実施
例ではこれらの手段を併用ルな例を説明する。Note that single crystallization is promoted by increasing the plasticity of the film by raising the substrate temperature or, in the case of semiconductors, by irradiating the deposition surface with light of a wavelength shorter than the absorption edge. In the embodiment, an example in which these means are used in combination will be explained.
（実施例−１）
第一図は本発明の第一の実施例を示す単結晶の製造方法
の説明図である。(Example-1) Figure 1 is an explanatory diagram of a method for manufacturing a single crystal showing a first example of the present invention.
第一図に示す様にシリコン基板（１１）を熱酸化し表面
に５０００オグストロームの厚さの酸化硅素（Ｓ ｉｏ
、）膜（１２）を付け、基板として使用した。 以後
、この基板をサンプルと呼ぶ。As shown in Figure 1, a silicon substrate (11) is thermally oxidized and silicon oxide (S io
, ) film (12) was attached and used as a substrate. Hereinafter, this substrate will be referred to as a sample.
蒸着装置内にはサンプルホールダーがあり、サンプルホ
ールダーにはサンプルを加熱するヒータ（１３）と、サ
ンプルを前後左右に移動さす移動機構（１４） 、サン
プルクランプ（１５）が内蔵されている。（１６）、（
１７）はアパチュア−で、蒸発原子をビーム状にするた
めに使用する（１８）、（１９）はルツボで、場内の蒸
着物はフィラメント（２０）、（２１）からの電子ビー
ムで加熱される。There is a sample holder inside the vapor deposition apparatus, and the sample holder includes a heater (13) that heats the sample, a moving mechanism (14) that moves the sample back and forth, and a sample clamp (15). (16), (
17) is an aperture, which is used to make the evaporated atoms into a beam. (18) and (19) are crucibles, and the deposited material in the field is heated by electron beams from filaments (20) and (21). .
（２２）は隔壁で二つの蒸発原子ビームが相互に干渉し
ない様に設けている。 （２３）は蒸発ビームを止め
るためのシャッターである。(22) is a partition wall provided so that the two evaporating atom beams do not interfere with each other. (23) is a shutter for stopping the evaporation beam.
ルツボ（１８）とアパチュア−（１６）を結ぶ線と、ル
ツボ（１９）とアパチュア−（１７）を結ぶ線のなす角
度は、最稠密面のなす角度７０゜５度に等しくしである
。The angle formed by the line connecting the crucible (18) and the aperture (16) and the line connecting the crucible (19) and the aperture (17) is equal to the angle of 70.5 degrees between the densest surfaces.
サンプルを８１０２面を下にサンプルホールダーにサン
プルクランプ（１５）で固定し、ルツボ（１８）、（１
９）にアルミニュームをいれた。Fix the sample to the sample holder with the 8102 side down with the sample clamp (15), and place the crucible (18), (1
9) I added aluminum.
全体を真空に引き、サンプルをヒーター（１３）で２０
０°Ｃに加熱し、温度、真空度が安定するそを待ち、シ
ャッター（２３）を閉じたまま、ルツボの中のアルミニ
ュームを溶解し、真空度が安定した後、サンプルホール
ダーの移動機構（１４）を動作させると同時にシャッタ
ー（２３）を開いた。The entire body is evacuated and the sample is heated for 20 minutes with the heater (13).
Heat to 0°C, wait for the temperature and vacuum level to stabilize, melt the aluminum in the crucible while keeping the shutter (23) closed, and after the vacuum level has stabilized, move the sample holder moving mechanism ( 14) and simultaneously opened the shutter (23).
サンプルを移動速度Ｑ、５ｃｍ／ｓｅｃで、蒸着方向を
含む垂直面内を水平に移動させたところ約１ミクロン程
度の厚さの光沢の無い膜がえられた。When the sample was moved horizontally in a vertical plane including the deposition direction at a moving speed Q of 5 cm/sec, a matte film with a thickness of about 1 micron was obtained.
この膜をスキャンニングマイクルスコープで観測したと
ころ、微細な六角形のパターンが全面に見られ、基板に
並行な面が（１，１，Ｏ）面になっていることが判明し
た。When this film was observed with a scanning microscope, it was found that a fine hexagonal pattern was observed over the entire surface, and the plane parallel to the substrate was a (1,1,O) plane.
同じサンプルを電子線回折で観測したちころ、やはり（
１，１，０）面特有のラウェスポットが観測され、広い
範囲にわたって単結晶になっていることが判明した。When the same sample was observed by electron diffraction, it was found that (
A Laue spot peculiar to the 1,1,0) plane was observed, and it was revealed that the crystal was single crystal over a wide range.
（実施例−２）
第二図は、本発明の第二の実施例を示す単結晶の製造方
法の説明図である。(Example-2) FIG. 2 is an explanatory diagram of a method for manufacturing a single crystal showing a second example of the present invention.
やはり、サンプルはシリコン基板（３１）を熱酸化によ
って表面に５０００オグストロームの８１０２膜（３２
）を付けて使用した。Again, the sample is a silicon substrate (31) with a 5000 angstrom 8102 film (32
) was used.
装置の構成はサンプルの方向を７０．５°変えることの
できる回転機構部（３３）を内蔵している。 この機構
によってサンプルと、これを保持している加熱機構（３
５）を７０．５度角度の違う二つの方向に１０秒ごとに
向きを変える。The configuration of the device includes a built-in rotation mechanism (33) that can change the direction of the sample by 70.5 degrees. This mechanism allows the sample and the heating mechanism (3
5) Change direction every 10 seconds in two directions with different angles of 70.5 degrees.
（３４）はサンプルのクランプ機構であり、（３８）は
蒸発原子の方向を揃えビーム状にするアパチュア−であ
る。（３６）はルツボで、ルツボ内の蒸着物はフィラメ
ント（３７）からの電子ビームの衝撃で溶解する。(34) is a sample clamping mechanism, and (38) is an aperture that aligns the direction of the evaporated atoms and forms a beam. (36) is a crucible, and the deposit in the crucible is melted by the impact of the electron beam from the filament (37).
（３９）は蒸発原子ビームを止めるためのシャッターで
、回転機構が方向を変えている間、蒸発ビームを止め、
停止している間は開く様に回転機構と連動している。(39) is a shutter for stopping the evaporating atom beam, which stops the evaporating beam while the rotating mechanism is changing direction.
It is linked to a rotating mechanism so that it opens while it is stopped.
まず、サンプルをサンプルクランプ（３４）で固定し、
ルツボ（３６）にアルミニュームを入れ、全体を真空に
引き、サンプルを加熱機構（３５）で２５０°Ｃに加熱
し、シャッターを閉じた状態でシャッターと回転機構の
電源を切っておき、アルミニュームを溶解し、真空度、
サンプル温度が安定したのを確認し、シャッターと回転
機構の電源をいれた。 以後は、自動的に蒸着の方向を
１０秒ごとに変えながら、約１時間蒸着したところ、サ
ンプルの中心部に光沢の無い１ミクロン程度の厚さの薄
膜が得られた。First, fix the sample with a sample clamp (34),
Place aluminum in the crucible (36), evacuate the entire body, heat the sample to 250°C with the heating mechanism (35), close the shutter and turn off the power to the shutter and rotating mechanism, and place the aluminum in the crucible. Dissolve, vacuum degree,
After confirming that the sample temperature had stabilized, we turned on the power to the shutter and rotation mechanism. After that, the deposition direction was automatically changed every 10 seconds and the deposition was continued for about 1 hour, and a thin film with a thickness of about 1 micron without gloss was obtained in the center of the sample.
この膜の特性を実施例−１の場合と同じように測定した
ところ、膜の周辺部を除いて単結晶になっていることが
わかった。When the characteristics of this film were measured in the same manner as in Example 1, it was found that the film was single crystal except for the peripheral portion.
（発明の効果）
２３．
３９ ・
・シャッター
従って、電子装置のみならず、保護膜などのコートにも
使用できる。(Effect of invention) 23. 39. Shutter Therefore, it can be used not only for electronic devices but also for coatings such as protective films.
第一図は、アルミニューム単結晶薄膜の製造に本発明を
適用した第一の実施例の説明図である。
第二図は、アルミニューム単結晶薄膜の製゛造に本発明
を適用した第二の実施例の説明図である。
（符号の説明）
１１．３１・・・シリコン基板
１２．３２・・・５１０２膜
１４・・・移動機構
１５．３４・・・サンプルクランプ機構３３・・・回転
機溝部
１３．３５・・・サンプル加熱ヒーター１６．１７．３
８・・・アパチュア−
１８，１９，３６・・・ルツボ
２０．２１，３７・・・フィラメントFIG. 1 is an explanatory diagram of a first embodiment in which the present invention is applied to the production of an aluminum single crystal thin film. FIG. 2 is an explanatory diagram of a second embodiment in which the present invention is applied to the production of an aluminum single crystal thin film. (Explanation of symbols) 11.31...Silicon substrate 12.32...5102 Film 14...Movement mechanism 15.34...Sample clamp mechanism 33...Rotating machine groove 13.35...Sample Heating heater 16.17.3
8... Aperture 18, 19, 36... Crucible 20. 21, 37... Filament
Claims (4)
板温度を上げて単結晶化を促進すると同時に、基板上に
作ろうとする単結晶が所望の結晶方位を持つように、蒸
着原子の入射方向を、所望の方位の結晶が持つ二つの相
異なる最稠密結晶面に垂直になるよう、二方向から蒸着
することを特徴とする単結晶の製造方法。(1) In a method of producing a single crystal thin film by vapor deposition, the temperature of the substrate is raised to promote single crystallization, and at the same time, the incidence of vapor deposited atoms is 1. A method for producing a single crystal, comprising depositing from two directions so that the direction is perpendicular to two different closest-packed crystal planes of a crystal with a desired orientation.
おいて、基板を移動させ大面積の基板上に単結晶膜を成
長さすことを特徴とする単結晶の製造方法。(2) A method for producing a single crystal according to claim 1, characterized in that the single crystal film is grown on a large area substrate by moving the substrate.
造方において、蒸発源を一つにし、一定の時間ごとに相
異なる最稠密結晶面に垂直に蒸発原子が当るように、基
板の方位を変えることを特徴とする単結晶の製造方法。(3) In the method for producing a single crystal according to claims 1 and 2, the evaporation source is unified, and the evaporated atoms hit different closest-packed crystal planes perpendicularly at regular intervals. , a single crystal manufacturing method characterized by changing the orientation of the substrate.
結晶の製造方法において、多結晶材料が半導体の場合に
は、この半導体の吸収端波長よりも短い波長の光で蒸着
面を照射することを特徴とする単結晶の製造方法。(4) In the method for producing a single crystal according to claims 1, 2, and 3, when the polycrystalline material is a semiconductor, light having a wavelength shorter than the absorption edge wavelength of the semiconductor is used. A method for producing a single crystal, characterized by irradiating a deposition surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1322289A JPH02196086A (en) | 1989-01-24 | 1989-01-24 | Production of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1322289A JPH02196086A (en) | 1989-01-24 | 1989-01-24 | Production of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02196086A true JPH02196086A (en) | 1990-08-02 |
Family
ID=11827147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1322289A Pending JPH02196086A (en) | 1989-01-24 | 1989-01-24 | Production of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02196086A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5738731A (en) * | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
| US5795385A (en) * | 1993-10-14 | 1998-08-18 | Neuralsystems Corporation | Method of forming single-crystalline thin film by beam irradiator |
| US6362097B1 (en) | 1998-07-14 | 2002-03-26 | Applied Komatsu Technlology, Inc. | Collimated sputtering of semiconductor and other films |
-
1989
- 1989-01-24 JP JP1322289A patent/JPH02196086A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5795385A (en) * | 1993-10-14 | 1998-08-18 | Neuralsystems Corporation | Method of forming single-crystalline thin film by beam irradiator |
| US5814150A (en) * | 1993-10-14 | 1998-09-29 | Neuralsystems Corporation | Method of and apparatus for forming single-crystalline thin film, beam irradiator, beam irradiating method and beam reflecting device |
| US5993538A (en) * | 1993-10-14 | 1999-11-30 | Mega Chips Corporation | Method of forming single-crystalline thin film using beam irradiating method |
| US6032611A (en) * | 1993-10-14 | 2000-03-07 | Neuralsystems Corporation | Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device |
| US5738731A (en) * | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
| US6025252A (en) * | 1993-11-19 | 2000-02-15 | Mega Chips Corporation | Semiconductor device and method of fabricating the same |
| US6177706B1 (en) | 1993-11-19 | 2001-01-23 | Mega Chips Corporation | Field-effect thin-film transistor device |
| US6225668B1 (en) | 1993-11-19 | 2001-05-01 | Mega Chips Corporation | Semiconductor device having a single crystal gate electrode and insulation |
| US6362097B1 (en) | 1998-07-14 | 2002-03-26 | Applied Komatsu Technlology, Inc. | Collimated sputtering of semiconductor and other films |
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