JPH0219971Y2 - - Google Patents

Info

Publication number
JPH0219971Y2
JPH0219971Y2 JP1984014852U JP1485284U JPH0219971Y2 JP H0219971 Y2 JPH0219971 Y2 JP H0219971Y2 JP 1984014852 U JP1984014852 U JP 1984014852U JP 1485284 U JP1485284 U JP 1485284U JP H0219971 Y2 JPH0219971 Y2 JP H0219971Y2
Authority
JP
Japan
Prior art keywords
semiconductor element
external lead
connection
lead wire
base electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984014852U
Other languages
Japanese (ja)
Other versions
JPS60129136U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984014852U priority Critical patent/JPS60129136U/en
Publication of JPS60129136U publication Critical patent/JPS60129136U/en
Application granted granted Critical
Publication of JPH0219971Y2 publication Critical patent/JPH0219971Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07336Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07631Techniques
    • H10W72/07636Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07651Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
    • H10W72/07653Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting changes in shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/631Shapes of strap connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)

Description

【考案の詳細な説明】 本考案は半導体素子と外部リード線とを接続す
る接続板を有する半導体装置の構造に関するもの
である。以下図面を参照して説明する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a structure of a semiconductor device having a connection plate for connecting a semiconductor element and an external lead wire. This will be explained below with reference to the drawings.

第1図a,bは従来装置の平面図及び部分断面
図、又第2図a,bはその説明図で図中1はベー
ス電極(板)、1aは外部取付孔、1b及び1c,
1dはベース電極1と一体及び分離された外部リ
ード線で夫々ベース電極1とは高低関係に配設さ
れている。2は半導体素子(例えばダイオードチ
ツプ)で一方の電極部が半田2aによりベース電
極上に接着され、ベース電極1と同様に外部リー
ド線1b乃至1dと高低関係に配設されている。
次に3は外部リード線(1c,1d)と半導体素
子1の他方の電極部に夫々半田接続される接続
板、3aは半導体素子1との接着面に設けた突起
である。以下この装置について第2図を参照して
説明する。a図は半導体素子等の組立状態(半田
付前)を示し、4は半田(シート状)である。こ
の状態では接続板3の一端即ち外部リード線1c
との接続面が互いに平行面であり、一方半導体素
子は半田2aを介してベース電極1と又半田2b
を介して接続板3の突起3aと夫々上記接続面に
比し小面積で接触状態に置かれている。そこで該
接続板3は両端部が高低差を有して外部リード線
1c及び半導体素子2間で保持され、しかも外部
リード線との接触面が比較的大きいことと相俟つ
て半田溶解時に該接続板3が追随できず、換言す
れば半導体チツプ2が引つ張られて第2図bに示
す如く半導体素子2が接続不良を起し、半田2
a,2bが均一にならず半田の薄い所で接着不良
或は熱疲労不良等の原因となる。またこのことは
ベース電極1と外部リード線1cとの折り曲げ高
さや接続板3の加工精度のバラツキも接続不良を
起す原因となつていた。本考案は上記の欠点を解
消し、半田付時の半田の溶解による接続板の下降
追随性を良くするとともに、使用部品の加工精度
のバラツキによる接続板の接続不良を防止した半
導体装置を提供するものである。第3図a,bは
本考案の実施例図でa図は組立時(半田付前)、
b図は半田付後の断面図、第4図a,bは接続板
の斜視図で1はベース電極、2は半導体素子、5
は外部リード線、3は接続板、6は封止樹脂であ
る。前記接続板3は第4図に示すように外部リー
ド線5との接続部が凸起状(a図)又はV字状
(b図)になつている。即ち第3図aに示す半田
付前の状態であつても接続板3は自由度をもち従
つて半田2a,2b,4の溶解した状態では半導
体素子2は第3図bの如く接続部の半田の表面張
力に作用されることなく適性な接続が得られる。
同様にベース電極や接続板の折り曲げ高さのバラ
ツキがあつても突起のあることにより容易に吸収
できる。上記実施例は接続板3の接続部に突起3
bを設けた図を示したが外部リード線5の接続部
に同様の突起を設けても同様の効果が得られる。
以上の説明から明らかなように本考案によれば接
続部に突起を設けることにより半田付時の半導体
素子と接続板との接続が部品精度に左右されるこ
となく容易に出来、しかも接続板を使用する他の
半導体装置に容易に応用できる等実用上の効果は
大きい。
Figures 1a and b are a plan view and a partial sectional view of the conventional device, and Figures 2a and b are explanatory diagrams thereof.In the figures, 1 is the base electrode (plate), 1a is the external mounting hole, 1b and 1c,
Reference numeral 1d denotes external lead wires that are integrated with and separated from the base electrode 1, and are arranged in a height relationship with the base electrode 1, respectively. Reference numeral 2 denotes a semiconductor element (for example, a diode chip), one electrode portion of which is bonded onto the base electrode with solder 2a, and similarly to the base electrode 1, it is disposed in a height relationship with the external lead wires 1b to 1d.
Next, reference numeral 3 denotes a connecting plate which is soldered to the external lead wires (1c, 1d) and the other electrode portion of the semiconductor element 1, respectively, and 3a is a protrusion provided on the adhesive surface with the semiconductor element 1. This apparatus will be explained below with reference to FIG. Figure a shows the assembled state (before soldering) of semiconductor elements, etc., and 4 is solder (sheet-like). In this state, one end of the connection plate 3, that is, the external lead wire 1c
The connecting surfaces of the semiconductor element and the base electrode 1 are parallel to each other, and the semiconductor element is connected to the base electrode 1 via the solder 2a and also to the solder 2b.
These are placed in contact with the protrusions 3a of the connection plate 3 via the respective connection surfaces in areas smaller than those of the connection surfaces. Therefore, the connection plate 3 is held between the external lead wire 1c and the semiconductor element 2 with a height difference at both ends, and the contact surface with the external lead wire is relatively large. The board 3 cannot follow the pattern, in other words, the semiconductor chip 2 is stretched, causing a connection failure in the semiconductor element 2 as shown in FIG. 2b, and the solder 2
a and 2b will not be uniform, leading to poor adhesion or poor thermal fatigue in places where the solder is thin. Furthermore, variations in the bending height between the base electrode 1 and the external lead wire 1c and in the machining accuracy of the connection plate 3 also caused connection failures. The present invention solves the above-mentioned drawbacks, and provides a semiconductor device that improves the ability of the connecting plate to follow the downward movement caused by melting of the solder during soldering, and prevents connection failures of the connecting plate due to variations in the processing accuracy of the parts used. It is something. Figures 3a and 3b are illustrations of the embodiment of the present invention, and figure a is during assembly (before soldering);
Figure b is a cross-sectional view after soldering, Figures 4a and b are perspective views of the connection plate, where 1 is a base electrode, 2 is a semiconductor element, and 5
3 is an external lead wire, 3 is a connection plate, and 6 is a sealing resin. As shown in FIG. 4, the connection plate 3 has a connection portion with the external lead wire 5 in a convex shape (Figure a) or a V-shape (Figure B). That is, even in the state before soldering as shown in FIG. 3a, the connection plate 3 has a degree of freedom, and therefore, in the state where the solders 2a, 2b, and 4 are melted, the semiconductor element 2 is in the position of the connection part as shown in FIG. 3b. A proper connection can be obtained without being affected by the surface tension of the solder.
Similarly, even if there is a variation in the bending height of the base electrode or the connection plate, it can be easily absorbed by the presence of the protrusion. In the above embodiment, there are projections 3 on the connection part of the connection plate 3.
Although the figure is shown in which a similar protrusion is provided at the connection portion of the external lead wire 5, the same effect can be obtained.
As is clear from the above explanation, according to the present invention, by providing the protrusion on the connection part, the connection between the semiconductor element and the connection plate during soldering can be easily made without being affected by the accuracy of the parts, and the connection plate can be easily connected. It has great practical effects, such as being easily applicable to other semiconductor devices.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図は従来構造図及びその説明図、
第3図、第4図は本考案の一実施例構造図であ
る。 図において1はベース電極(板)、1aは取付
孔、1b,1c,1dは外部リード線、2は半導
体素子、2a,2bは半田、3は接続板、3a,
3bは突起部、4は半田、5は外部リード線、6
はモールド樹脂である。
Figures 1 and 2 are conventional structural diagrams and their explanatory diagrams,
3 and 4 are structural diagrams of an embodiment of the present invention. In the figure, 1 is a base electrode (plate), 1a is a mounting hole, 1b, 1c, 1d are external lead wires, 2 is a semiconductor element, 2a, 2b are solder, 3 is a connection plate, 3a,
3b is a projection, 4 is solder, 5 is an external lead wire, 6
is mold resin.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ベース電極と、前記ベース電極上に一方の電極
部が接着された半導体素子と、前記半導体素子と
高低関係に配設された外部リード線と、前記半導
体素子の他方の電極部と外部リード線との2点間
を夫々半田接続する接続板を有する半導体装置に
おいて、前記接続板の半導体素子との接続面及び
外部リード線との接続面に突起部を設けたことを
特徴とする半導体装置。
a base electrode, a semiconductor element with one electrode part bonded on the base electrode, an external lead wire arranged in a height relationship with the semiconductor element, and the other electrode part of the semiconductor element and the external lead wire. What is claimed is: 1. A semiconductor device comprising a connection plate for connecting two points by solder, wherein a protrusion is provided on a connection surface of the connection plate with a semiconductor element and a connection surface with an external lead wire.
JP1984014852U 1984-02-03 1984-02-03 semiconductor equipment Granted JPS60129136U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984014852U JPS60129136U (en) 1984-02-03 1984-02-03 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984014852U JPS60129136U (en) 1984-02-03 1984-02-03 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS60129136U JPS60129136U (en) 1985-08-30
JPH0219971Y2 true JPH0219971Y2 (en) 1990-05-31

Family

ID=30500155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984014852U Granted JPS60129136U (en) 1984-02-03 1984-02-03 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS60129136U (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2528687Y2 (en) * 1988-06-06 1997-03-12 日本電信電話株式会社 Planar type 2-terminal bidirectional thyristor
JP5398608B2 (en) * 2010-03-18 2014-01-29 新電元工業株式会社 Internal connection structure of semiconductor device and semiconductor device
CN103314437B (en) * 2011-03-24 2016-03-30 三菱电机株式会社 Power semiconductor modular and power unit device
CN109478521B (en) * 2016-07-26 2022-10-11 三菱电机株式会社 Semiconductor device with a plurality of semiconductor chips
JP6474939B2 (en) 2017-02-20 2019-02-27 新電元工業株式会社 Electronic device and connector

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512728A (en) * 1978-07-14 1980-01-29 Hitachi Ltd Regin sealing type power transistor
JPS5624964A (en) * 1979-08-08 1981-03-10 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS60129136U (en) 1985-08-30

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