JPH02201889A - El device - Google Patents
El deviceInfo
- Publication number
- JPH02201889A JPH02201889A JP1021487A JP2148789A JPH02201889A JP H02201889 A JPH02201889 A JP H02201889A JP 1021487 A JP1021487 A JP 1021487A JP 2148789 A JP2148789 A JP 2148789A JP H02201889 A JPH02201889 A JP H02201889A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- insulating layer
- forming
- thermosetting resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 6
- 229920005992 thermoplastic resin Polymers 0.000 claims description 4
- 229920005989 resin Polymers 0.000 abstract description 13
- 239000011347 resin Substances 0.000 abstract description 13
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000012188 paraffin wax Substances 0.000 abstract description 4
- 239000001993 wax Substances 0.000 abstract description 2
- 239000004575 stone Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 30
- 238000005401 electroluminescence Methods 0.000 description 25
- 239000010408 film Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011572 manganese Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical group FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012184 mineral wax Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、エレクトロルミネンス(EL)現象を利用し
たEL素子、特に薄膜EL素子に関するものである。E
L素子は、近年、各種装置のデイスプレィに応用されつ
つある。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an EL device that utilizes the electroluminescence (EL) phenomenon, and particularly to a thin film EL device. E
In recent years, L elements are being applied to displays of various devices.
[従来技術とその解決しようとする課題]添付第3図は
、従来の薄膜EL素子を示すもので、ガラス等からなる
透明基板1上に透明電極2、絶縁層3、EL発光層4、
第2絶縁層5および対向電極6を順次積層してEL多層
膜7を形成し、透明電極2と対向電極6との間に数10
Hzから数KHzの電圧を印加することによりEL発光
層4内の活性種イオンを励起して発光させるものである
。[Prior Art and Problems to be Solved] The attached FIG. 3 shows a conventional thin film EL device, in which a transparent electrode 2, an insulating layer 3, an EL light emitting layer 4,
The second insulating layer 5 and the counter electrode 6 are sequentially laminated to form an EL multilayer film 7, and between the transparent electrode 2 and the counter electrode 6 several tens of
By applying a voltage of Hz to several KHz, active species ions in the EL light emitting layer 4 are excited to emit light.
従来薄膜EL素子おいて、前記EL多層膜7が湿気に弱
く、湿気に触れることにより、寿命が著しく短くなると
いう問題があった。このため、水分の侵入を防止する各
種の措置が採られており、該従来例は、透明基板1上の
EL多層膜7をガラスキャップ8で封止し、ガラスキャ
ップ8の内部にシリコンオイル等のオイル9を充填した
ものである(例えば特開昭61−232595号)。Conventional thin-film EL devices have had the problem that the EL multilayer film 7 is sensitive to moisture, and its life is significantly shortened when it comes into contact with moisture. For this reason, various measures have been taken to prevent moisture from entering.In the conventional example, the EL multilayer film 7 on the transparent substrate 1 is sealed with a glass cap 8, and silicone oil etc. are placed inside the glass cap 8. (For example, JP-A-61-232595).
しかしながら、成形したガラスキャップ8を用い、これ
を基Fi、1に気密に接着するためには、ガラスキャッ
プ8を精密に成形し、かつガラスキャップ8を基板1に
正確に接着する必要がある。このため、材料コストが高
くなり、また組み立て作業が繁雑となり、その結果、製
造コストが高騰するという問題があった。However, in order to use the molded glass cap 8 and to hermetically adhere it to the substrate Fi,1, it is necessary to precisely mold the glass cap 8 and to precisely adhere the glass cap 8 to the substrate 1. For this reason, there have been problems in that material costs are high and assembly work is complicated, resulting in a rise in manufacturing costs.
第4図は別の従来例を示し、基板1上のEL多層膜7を
覆って接着層10を介し金属箔12を挾んで防湿保護フ
ィルム1)を積層一体化したもので、これらによりEL
多層膜7への侵入水分、湿分を遮断し保護するものであ
る(例えば特開昭63−170894号)、該従来例は
先の従来例に比べ容易かつ低コストで製造せきる利点を
有する。FIG. 4 shows another conventional example in which a moisture-proof protective film 1) is laminated and integrated by covering an EL multilayer film 7 on a substrate 1 and sandwiching a metal foil 12 via an adhesive layer 10.
It protects the multilayer film 7 by blocking moisture from entering (e.g., JP-A-63-170894), and this conventional example has the advantage of being easier and cheaper to manufacture than the previous conventional example. .
ところでEL多層膜形成上、微細なピンホール等の欠陥
を絶無にするのは困難とされ、特に絶縁層のピンホール
が絶縁破壊の起点となり破壊が拡大することが知られて
いるが、通常千画素(ドツト)当り数十μmオーダのピ
ンホールが、数個ないし十数個存在するといわれる。し
かるに該先行例においては、該ピンホールすなわち絶縁
破壊起点における熱が接着層をはじめとする保護フィル
ム等に遮断されて熱放散し難く、逆に蓄積されて絶縁破
壊が拡大され易いという問題を有する。By the way, it is difficult to eliminate defects such as minute pinholes when forming an EL multilayer film, and it is known that pinholes in the insulating layer in particular become the starting point for dielectric breakdown and expand the breakdown. It is said that there are several to more than ten pinholes on the order of tens of micrometers per pixel (dot). However, in this prior example, there is a problem in that the heat at the pinhole, that is, the origin of the dielectric breakdown, is blocked by the adhesive layer and other protective films, making it difficult to dissipate the heat, and conversely, the heat is likely to accumulate, causing the dielectric breakdown to expand. .
本発明はこれらの問題点を解消し、容易に製造でき、か
つ湿分の侵入や絶縁破壊の拡大を抑制した耐久性の優れ
たEL素子を提供するものである。The present invention solves these problems and provides an EL element that is easy to manufacture and has excellent durability that suppresses moisture intrusion and expansion of dielectric breakdown.
[課題を解決するための手段] 本発明はEL素子に関し、透明基板に透明電極。[Means to solve the problem] The present invention relates to an EL element, which includes a transparent electrode on a transparent substrate.
絶縁層、EL発光層、第2絶縁層、対向電極からなるE
L多層膜を形成し、さらに空間層を介して該EL多層膜
の封止被覆層を形成せしめたこと、好適には揮発性成分
および/または熱可塑性樹脂を前記空間層の形成素材と
したことからなる。E consisting of an insulating layer, an EL light emitting layer, a second insulating layer, and a counter electrode
An L multilayer film is formed, and a sealing coating layer of the EL multilayer film is formed via a space layer, and preferably a volatile component and/or a thermoplastic resin is used as the material for forming the space layer. Consisting of
本発明において、EL多層膜上に空間層を介してモール
ディング法等により成形した熱硬化性樹脂、常温硬化性
樹脂等を採用し封止層を形成してもよく、該封止層は接
着剤により、あるいは熱圧着等の適宜手段により基板に
取付けることができる。In the present invention, a sealing layer may be formed on the EL multilayer film by using a thermosetting resin, room temperature curing resin, etc. molded by a molding method or the like via a space layer, and the sealing layer is formed using an adhesive. It can be attached to the substrate by suitable means such as thermocompression bonding or thermocompression bonding.
前記空間を設けることによりEL多層膜における絶縁破
壊起点の熱の放散を容易とし、破壊の拡大を抑制する。By providing the space, heat at the origin of dielectric breakdown in the EL multilayer film can be easily dissipated, and the expansion of the breakdown can be suppressed.
ただし、熱放散を良好にするためには空間層の間隔を百
μmまたはそれ以上とする鄭が好ましい。However, in order to improve heat dissipation, it is preferable that the spacing between the space layers be 100 μm or more.
前記封止層はフェノール、メラミン、アルキッド等の各
種樹脂を適宜採用できるが、湿分の透過をより抑制する
うえで孔径5Å以下のゼオライトを数1Ilt%ないし
十数IIIt%程度混入しておくのが好ましい。空間層
を形成する他の手段としては、空間層を形成する素材、
すなわち揮発昇華するようなナフタリン、ショウノウ等
の成分あるいは低融点で流動化し易いポリエチレン等の
熱可塑性樹脂等を空間形成部分に施しておき、前者は加
熱により揮散させ、後者は加熱液化し、多孔化せしめた
熱硬化性樹脂封止層に吸収させることができる。The sealing layer can be made of various resins such as phenol, melamine, alkyd, etc., but in order to further suppress the permeation of moisture, it is recommended that zeolite with a pore size of 5 Å or less be mixed in at about several 1 Ilt% to about ten IIIt%. is preferred. Other means for forming the spatial layer include materials forming the spatial layer;
In other words, ingredients such as naphthalene and camphor that volatilize and sublimate, or thermoplastic resins such as polyethylene that have a low melting point and are easily fluidized, are applied to the space forming part, and the former is volatilized by heating, and the latter is liquefied by heating and becomes porous. It can be absorbed into the thermosetting resin sealing layer.
なお、多孔質熱硬化性樹脂は低沸点溶媒の混入、その他
適宜の公知手段により容易に形成でき、また特に高多孔
質とする必要もない。Note that the porous thermosetting resin can be easily formed by mixing a low boiling point solvent or by other appropriate known means, and there is no need to make it highly porous.
以下実施例により本発明を詳述する。The present invention will be explained in detail with reference to Examples below.
[実施例1
添付第1図に示すように、市販の透明ガラス基板(コー
ニング#7059) 1上に、Inl0H−5nOz系
の透明導電膜であるITO(酸化インジウム錫)からな
る透明T!X極2をスパッタリング法により形成し、エ
ツチングしてパターン化する。次に、この透明T4極2
上にTa205からなる絶縁層3を反応性スパッタリン
グ法により形成する。さらに、この絶縁層3上にマンガ
ンをドープした硫化亜鉛(ZnS:Mn。[Example 1] As shown in the attached Figure 1, a transparent T! The X-pole 2 is formed by sputtering and patterned by etching. Next, this transparent T4 pole 2
An insulating layer 3 made of Ta205 is formed thereon by reactive sputtering. Furthermore, zinc sulfide (ZnS:Mn) doped with manganese is deposited on this insulating layer 3.
Mn=Q、3atχ)からなるEl、発光層4をスパッ
タリング法により形成する。これらの上を覆って、Ta
206からなる第2の絶縁層5を反応性スパッタリング
法により形成し、さらに、第2の絶縁層5上に電圧印加
電極用のアルミニウム膜をスパッタリング法により形成
する。該アルミニウム膜をエツチングしパターン化して
、対向電極6を形成しEL多層膜7となす。A light-emitting layer 4 made of Mn=Q, 3atχ) is formed by sputtering. Cover these with Ta
A second insulating layer 5 made of 206 is formed by a reactive sputtering method, and an aluminum film for a voltage application electrode is further formed on the second insulating layer 5 by a sputtering method. The aluminum film is etched and patterned to form a counter electrode 6 to form an EL multilayer film 7.
本実施例においては、空間層を形成する素材13として
パラフィンワックスの如き石ロウ成分よりなる熱可塑性
樹脂を採用した。In this embodiment, a thermoplastic resin containing a mineral wax component such as paraffin wax is used as the material 13 forming the space layer.
すなわち、EL多層膜7上に加熱流動化したパラフィン
ワックス13を塗布し、さらにその上に前記した如き熱
硬化性樹脂の溶解液よりなる封止層14を塗布する。次
いでこれらを加熱することにより、熱硬化性樹脂を溶解
した低沸点溶媒が飛散する一方、核部に流動化したパラ
フィンワックスが毛管現象等の作用で侵入、吸収される
。しかして空間Jli1.3を形成し、封止層14には
熱硬化性樹脂中に撥水性に富んだ石ロウ成分を含有させ
たことによりきわめて耐湿性に富んだものとなる。That is, the paraffin wax 13 heated and fluidized is applied onto the EL multilayer film 7, and the sealing layer 14 made of a thermosetting resin solution as described above is further applied thereon. By then heating these, the low boiling point solvent in which the thermosetting resin is dissolved is scattered, while the fluidized paraffin wax enters and is absorbed into the core by capillary action or the like. Thus, a space Jli1.3 is formed, and the sealing layer 14 has extremely high moisture resistance by containing a hydrophobic wax component in the thermosetting resin.
なお、熱硬化性樹脂封止層14の形成には基Fil上に
当該樹脂14の外面14に対応するモールドを予め配置
しておき、空間層形成素材13とモールド間に熱硬化性
樹脂14溶解液を注入し、硬化せしめることも可能であ
る。In addition, to form the thermosetting resin sealing layer 14, a mold corresponding to the outer surface 14 of the resin 14 is placed on the base film in advance, and the thermosetting resin 14 is melted between the space layer forming material 13 and the mold. It is also possible to inject a liquid and allow it to harden.
第2図は本発明の別の態様を示したもので、大面積薄膜
EL素子においては空間層13にガラスピーズ等の粒状
スペーサー15を散在させることにより、その間隔を維
持することもできる。さらに封止層14を覆ってポリ3
弗化エチレン、ポリ4弗化エチレンの如き防湿膜16を
形成することによりさらに耐湿性を向−ヒするものであ
る。FIG. 2 shows another embodiment of the present invention. In a large-area thin film EL device, the spacing can be maintained by interspersing granular spacers 15 such as glass beads in the space layer 13. Further, the sealing layer 14 is covered with poly 3
Moisture resistance is further improved by forming a moisture-proof film 16 such as fluoroethylene or polytetrafluoroethylene.
試験例
添付第3図に示す構成の従来技術の薄膜EL素子(比較
例1)、第4図に示す構成の従来技術のもの(比較例2
)、第1図に示す本発明に係るものを夫々試作し1万時
間稼働させたところ、比較例2のものは絶縁破壊が拡大
され、その大きさが100μmφを越えるものが随所に
認められた。Test examples attached A conventional thin film EL device with the configuration shown in FIG. 3 (Comparative Example 1), a conventional thin film EL device with the configuration shown in FIG. 4 (Comparative Example 2)
), and when the devices according to the present invention shown in Fig. 1 were prototyped and operated for 10,000 hours, the dielectric breakdown of Comparative Example 2 was enlarged, and it was observed that the size exceeded 100 μmφ in many places. .
−力木発明および比較例1のものは絶縁破壊の拡大は認
められないが、比較例1においてはガラスキャップの製
作および基板の据付けにきわめて長時間および手間を必
要とするためコスト面に問題を有する0本発明のものは
製造が容易かつ低コストにでき、また絶縁破壊の拡大も
抑制できる等の点において最も優れたものである。- No expansion of dielectric breakdown was observed in the strength-grip invention and in Comparative Example 1, but in Comparative Example 1, manufacturing of the glass cap and installation of the board required an extremely long time and effort, which caused problems in terms of cost. The present invention having 0 is the most excellent in that it can be manufactured easily and at low cost, and can also suppress the expansion of dielectric breakdown.
[発明の効果〕
本発明によれば、その構造が単純で製造が容易であり、
かつ湿分の侵入、絶縁破壊の拡大を抑制し、長期に亘る
稼働においても劣化し難いという効果を奏する。[Effects of the Invention] According to the present invention, the structure is simple and easy to manufacture;
It also suppresses the intrusion of moisture and the spread of dielectric breakdown, and has the effect of being resistant to deterioration even during long-term operation.
第1図ないし第4図は薄膜EL素子の部分側断面図であ
り、第1.第2図が本発明に係るもの、第3.第4図は
従来技術に係るものである。1 to 4 are partial side cross-sectional views of the thin film EL element, and FIG. Fig. 2 is the one according to the present invention, Fig. 3. FIG. 4 is related to the prior art.
Claims (2)
2絶縁層、対向電極からなるEL多層膜を形成し、さら
に空間層を介して該EL多層膜の封止層を形成せしめた
ことを特徴とするEL素子。(1) An EL multilayer film consisting of a transparent electrode, an insulating layer, an EL light emitting layer, a second insulating layer, and a counter electrode was formed on a transparent substrate, and a sealing layer of the EL multilayer film was further formed via a space layer. An EL element characterized by the following.
層の形成素材としたことを特徴とする請求項(1)記載
のEL素子。(2) The EL device according to claim (1), wherein a volatile component and/or a thermoplastic resin are used as materials for forming the spatial layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1021487A JPH02201889A (en) | 1989-01-31 | 1989-01-31 | El device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1021487A JPH02201889A (en) | 1989-01-31 | 1989-01-31 | El device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02201889A true JPH02201889A (en) | 1990-08-10 |
Family
ID=12056334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1021487A Pending JPH02201889A (en) | 1989-01-31 | 1989-01-31 | El device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02201889A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06123640A (en) * | 1992-10-09 | 1994-05-06 | Nippon Seiki Co Ltd | Display board |
-
1989
- 1989-01-31 JP JP1021487A patent/JPH02201889A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06123640A (en) * | 1992-10-09 | 1994-05-06 | Nippon Seiki Co Ltd | Display board |
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