JPH02202076A - Non-linear switching element and manufacture thereof - Google Patents

Non-linear switching element and manufacture thereof

Info

Publication number
JPH02202076A
JPH02202076A JP1021509A JP2150989A JPH02202076A JP H02202076 A JPH02202076 A JP H02202076A JP 1021509 A JP1021509 A JP 1021509A JP 2150989 A JP2150989 A JP 2150989A JP H02202076 A JPH02202076 A JP H02202076A
Authority
JP
Japan
Prior art keywords
switching element
nonlinear
conductor
thin film
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1021509A
Other languages
Japanese (ja)
Inventor
Fumiaki Matsushima
文明 松島
Yoshihiro Ono
大野 好弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1021509A priority Critical patent/JPH02202076A/en
Priority to EP19890304234 priority patent/EP0340968A3/en
Priority to KR1019890005597A priority patent/KR900016364A/en
Publication of JPH02202076A publication Critical patent/JPH02202076A/en
Priority to US07/714,970 priority patent/US5395678A/en
Priority to US07/714,817 priority patent/US5240797A/en
Priority to US07/724,000 priority patent/US5242558A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野] 本発明は非線形特性を利用したスイッチング素子に関し
、詳しくは液晶のアクティブマトリクス駆動に利用でき
る双方向非線形スイッチング素子に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a switching element that utilizes nonlinear characteristics, and more particularly to a bidirectional nonlinear switching element that can be used for active matrix driving of liquid crystal.

〔従来の技術1 従来から金属−絶縁体−金属(M I M)の薄膜積層
構造により、第1図に示すような双方向非線形特性が示
されることが知られ、TaTaaOs  Crからなる
MIM素子が液晶テレビの液晶駆動用スイッチング素子
として実用化されている。
[Prior art 1] It has been known that a metal-insulator-metal (MIM) thin film laminated structure exhibits bidirectional nonlinear characteristics as shown in Fig. 1, and MIM elements made of TaTaaOsCr have been It has been put into practical use as a switching element for driving the liquid crystals of liquid crystal televisions.

液晶駆動用として用いた場合のMIM素子のスイッチン
グ素子としての性能は、電圧に対する抵抗値の急しゅん
な非線形的低下が重要となるが、そのためには、素子の
スイッチング機能が十分に発現される印加電圧が確保さ
れることも必要となる、すなわち、MIM素子と液晶と
の直列構造を考えたとき、素子のキャパシタンス、つま
り素子の絶縁体のキャパシタンスが小さければ小さいほ
どよいことになる。
For the performance of an MIM element as a switching element when used to drive a liquid crystal, it is important that the resistance value decreases rapidly and nonlinearly with respect to voltage. It is also necessary to ensure a voltage, that is, when considering a series structure of an MIM element and a liquid crystal, the smaller the capacitance of the element, that is, the capacitance of the insulator of the element, the better.

ところが無機酸化物を絶縁体を用いた場合その誘電率は
一般に太きくTa*Osの場合では25〜27である。
However, when an insulator is used as an inorganic oxide, its dielectric constant is generally large, and in the case of Ta*Os, it is 25 to 27.

したがって、キャパシタンスを小さくするには、素子面
積を小さくするか、絶縁体の膜厚を厚くすることが考え
られる が、膜厚を厚くすると、その抵抗値が必要以上に小さく
ならない問題も生じ実用上は素子面積を小さ(する方法
が取られる。実際、液晶TV用に実用化されている素子
の面積は、5μm角であり。
Therefore, in order to reduce capacitance, it is possible to reduce the element area or increase the thickness of the insulator, but increasing the thickness also raises the problem that the resistance value does not become smaller than necessary, making it impractical for practical use. A method is taken to reduce the element area.Actually, the area of elements put into practical use for liquid crystal TVs is 5 μm square.

製造上極めて高度な技術が要求される。Extremely advanced manufacturing technology is required.

また、製造上、真空成膜装置の多用やドライエツチング
装置の使用によりスルーブツトも悪く、コスト高になる
などの問題があった。
Further, in manufacturing, there are problems such as poor throughput and high cost due to frequent use of vacuum film forming equipment and dry etching equipment.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述のように従来の技術では、液晶駆動用に用いる双方
向非線形素子が、容易にかつ低コストで作れないという
問題を有していた。
As described above, the conventional technology has a problem in that bidirectional nonlinear elements used for driving liquid crystal cannot be manufactured easily and at low cost.

そこで本発明はこのような問題点を解決するためのもの
で、絶縁体として誘電率の小さな有機物を用いることに
より素子面積を大きく形成でき。
The present invention is intended to solve these problems, and by using an organic material with a small dielectric constant as an insulator, a large element area can be formed.

さらに、有機物として化学的に安定なフタロシアニン系
物質を用い、また、その絶縁体を湿式法により形成する
ことで低コスト化も実現した。
Furthermore, by using a chemically stable phthalocyanine-based organic material and forming the insulator using a wet method, we were able to reduce costs.

フタロシアニン形物質はいわゆるダイオード特性を示す
ことは知られていたが、第1図のような双方向非線形特
性の発現については今までに報告はなく、我々の新しい
発見といえる。
Although it has been known that phthalocyanine-type substances exhibit so-called diode characteristics, there have been no reports of bidirectional nonlinear characteristics as shown in Figure 1, and this can be called our new discovery.

〔課題を解決するための手段] 本発明の非線形スイッチング素子は導電体上に湿式法に
より絶縁体膜を形成しさらにその上に導電体の膜を形成
する。絶縁体膜の成膜法としては、電解により荷電する
特性をもつ界面活性剤のミセル水溶液中に絶縁体材料粒
子を分散し、該界面活性剤のミセルで取り囲むことによ
りコロイド化し、さらに、この液中に被成膜基板である
導電体を電極として浸漬し、電解することにより、ミセ
ルを電気的に破壊し、中に取り囲んでいた絶縁体材料粒
子を導電体上に析出、成膜するものである。
[Means for Solving the Problems] In the nonlinear switching element of the present invention, an insulator film is formed on a conductor by a wet method, and a conductor film is further formed on the insulator film. The insulating film is formed by dispersing insulating material particles in an aqueous micelle solution of a surfactant that has the property of being electrolytically charged, and forming a colloid by surrounding the particles with micelles of the surfactant. A conductor, which is the substrate to be film-formed, is immersed as an electrode in the micelle and electrolyzed, thereby electrically destroying the micelles and depositing the insulator material particles surrounding them on the conductor to form a film. be.

基板に用いる導電体としては、金属、酸化物導電体(I
 nt Os 、Snowなど)などが好ましい。
As the conductor used for the substrate, metal, oxide conductor (I
nt Os , Snow, etc.) are preferred.

絶縁体材料としては、フタロシアニン系物質が好ましく
、粒子径は1次粒子径としてO6005um〜0,5μ
mが好ましい。
As the insulating material, phthalocyanine substances are preferable, and the particle size is O6005um to 0.5μ as the primary particle size.
m is preferred.

さらに絶縁体を被覆する導電体としては、やはり、金属
あるいは酸化物導電体が好ましい。
Furthermore, the conductor covering the insulator is preferably a metal or oxide conductor.

〔実 施 例 l] 酸化物導電体である酸化インジウム・スズ(ITo)を
ガラス基板上に1000人の膜厚で形成した。
[Example 1] Indium tin oxide (ITo), which is an oxide conductor, was formed on a glass substrate to a thickness of 1000 mm.

このITo上にパターン成膜できる絶縁材料として感光
性エポキシアクリレートの膿lumを形成し、15X 
15μmの面積の微少ホールを形成し、ITOIIIを
露出させた(第2図(a))なお、パターン成膜できる
材料としてはエポキシアクリレートに限るものではない
A photosensitive epoxy acrylate pus was formed as an insulating material that could be patterned on this ITo, and 15X
A minute hole with an area of 15 μm was formed to expose ITOIII (FIG. 2(a)). Note that the material that can be used to form a pattern film is not limited to epoxy acrylate.

この基板をアノードとし、白金電極をカソードとし、メ
タルフリーフタロシアニンを分散コロイド化した電解液
中で電解を行なった。
Using this substrate as an anode and a platinum electrode as a cathode, electrolysis was carried out in an electrolytic solution containing dispersed colloidal metal-free phthalocyanine.

電荷液は、 メタルフリーフタロシアニン    5g/I2電解で
荷電する界面活性剤    1mM(同口化学製 Fe
rroceny l −P E G )支持塩(LiB
r)        0.05Mの組成であり、超音波
ホモジナイザーにより、メタルフリーフタロシアニンを
コロイド分散し、その上澄み液を用いた。
The charge liquid is metal-free phthalocyanine 5g/surfactant charged by I2 electrolysis 1mM (Doguchi Chemical Co., Ltd. Fe
rroceny l -P EG ) supporting salt (LiB
r) The composition was 0.05M, and metal-free phthalocyanine was colloidally dispersed using an ultrasonic homogenizer, and the supernatant liquid was used.

電解は+〇、4V (VS、S、C,E、)の定電圧で
10分行ない、ITO露出した微少ホール部(15X1
5μm)にメタルフリーフタロシアニン膜が3000人
の膜厚で得られた(第2図(b))。
Electrolysis was carried out for 10 minutes at a constant voltage of +〇, 4V (VS, S, C, E,), and the ITO exposed minute hole part (15X1
A metal-free phthalocyanine film was obtained with a thickness of 3000 μm (Fig. 2(b)).

この膜を150℃で15分乾燥した後、このフタロシア
ニン膜上にITOを2000人の膜厚でスパッタリング
により形成した(第2図(c))。
After drying this film at 150° C. for 15 minutes, ITO was formed on the phthalocyanine film to a thickness of 2000 nm by sputtering (FIG. 2(c)).

以上の操作によりITO−メタルフリーフタロシアニン
−ITOの薄膜積層構造による素子が得られた。
Through the above operations, an element having a thin film laminated structure of ITO-metal-free phthalocyanine-ITO was obtained.

次に第2図(C)の22をプラス極25をマイナス極と
して順次電圧を上昇させながら印加すると第3図の31
のよ、うな非線形特性が得られた。
Next, when voltage is applied to 22 in Fig. 2 (C) while increasing the voltage sequentially with the positive electrode 25 as the negative electrode, 31 in Fig. 3 is applied.
Nonlinear characteristics like this were obtained.

続いて、前記とは逆に第2図の25を22をプラス極、
22をマイナス極として順次電圧を上昇させながら印加
すると第3図の32に示すような非線形特性が得られた
。これは31とほぼ同様な特性であり、この素子は印加
する電圧の極性が異なっでも、はぼ同様の非線形特性を
示すものであり、双方向非線形素子特性が得られたこと
になる。
Next, contrary to the above, connect 25 and 22 in Figure 2 to the positive terminal,
When 22 was set as a negative pole and the voltage was applied while increasing sequentially, a nonlinear characteristic as shown at 32 in FIG. 3 was obtained. This is almost the same characteristic as No. 31, and even if the polarity of the applied voltage is different, this element shows almost the same nonlinear characteristics as that of No. 31, which means that bidirectional nonlinear element characteristics were obtained.

〔実 施 例 2] 絶縁体材料としてやはりメタルフリーのオクタシアノフ
タロシアニンを用いたが、実施例1とほぼ同様の双方向
非線形特性が得られた。
[Example 2] Although metal-free octacyanophthalocyanine was also used as the insulator material, almost the same bidirectional nonlinear characteristics as in Example 1 were obtained.

[発明の効果] 以上のように本発明により、従来のMIM素子と同様の
特性を示す非線形スイッチング素子が。
[Effects of the Invention] As described above, the present invention provides a nonlinear switching element that exhibits characteristics similar to those of conventional MIM elements.

従来よりもパターン形成の容易な大きな面積で、しかも
化学的に安定なフタロシアニン膿な湿式法により形成す
ることで得られることは、単にコストパフォーマンスの
向上に寄与するだけでなく。
The ability to form patterns using a chemically stable phthalocyanine wet method not only contributes to improved cost performance but also to a larger area that is easier to form than conventional patterns.

今後のアクティブマトリクス大型カラー液晶パネルを製
造する上でも多大な効果をもたらすものである。
This will have a significant effect on the production of future active matrix large color liquid crystal panels.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は非線形特性の例を示す図。 第2図は本発明の非線形スイッチング素子の製造工程を
示す図。 第3図は本発明の非線形スイッチング素子の双方向非線
形特性を示す図。 21・・・ガラス基板 roIll パターン成膜のできる絶縁性材料 有機絶縁体薄膜 TOIII 以上 出願人 セイコーエプソン株式会社
FIG. 1 is a diagram showing an example of nonlinear characteristics. FIG. 2 is a diagram showing the manufacturing process of the nonlinear switching element of the present invention. FIG. 3 is a diagram showing bidirectional nonlinear characteristics of the nonlinear switching element of the present invention. 21...Glass substrate roIll Insulating material organic insulator thin film TOIII capable of pattern deposition Applicant: Seiko Epson Corporation

Claims (1)

【特許請求の範囲】 1)導電体上に有機物絶縁体薄膜を形成し、さらに該絶
縁体薄膜上に導電体薄膜を形成したことを特徴とする非
線形スイッチング素子。 2)素子が双方向非線形特性をもつことを特徴とする請
求項1記載の非線形スイッチング素子。 3)有機絶縁膜材料としてフタロシアニン系物質を用い
たことを特徴とする請求項1記載の非線形スイッチング
素子。 4)有機絶縁体薄膜を形成する方法として、有機絶縁膜
材料微粒子を電解により荷電する界面活性剤のミセルに
可溶化し、該ミセル溶液中で電解を行なうことにより、
ミセルを電気的に破壊し、導電体上に有機絶縁膜材料粒
子を析出、成膜することを特徴とする請求項1記載の非
線形スイッチング素子の製造方法。
[Scope of Claims] 1) A nonlinear switching element characterized in that an organic insulator thin film is formed on a conductor, and a conductor thin film is further formed on the insulator thin film. 2) The nonlinear switching device according to claim 1, wherein the device has bidirectional nonlinear characteristics. 3) The nonlinear switching element according to claim 1, characterized in that a phthalocyanine-based substance is used as the organic insulating film material. 4) As a method of forming an organic insulating thin film, fine particles of an organic insulating film material are solubilized in micelles of a surfactant that is charged by electrolysis, and electrolysis is performed in the micelle solution.
2. The method of manufacturing a nonlinear switching element according to claim 1, wherein the micelles are electrically destroyed and organic insulating film material particles are deposited and formed on the conductor.
JP1021509A 1988-04-30 1989-01-31 Non-linear switching element and manufacture thereof Pending JPH02202076A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP1021509A JPH02202076A (en) 1989-01-31 1989-01-31 Non-linear switching element and manufacture thereof
EP19890304234 EP0340968A3 (en) 1988-04-30 1989-04-27 Thin film device and method of manufacturing the same
KR1019890005597A KR900016364A (en) 1988-04-30 1989-04-28 Thin film former and manufacturing method thereof
US07/714,970 US5395678A (en) 1988-04-30 1991-06-13 Thin film color filter for liquid crystal display
US07/714,817 US5240797A (en) 1988-04-30 1991-06-13 Thin film device and method of manufacture
US07/724,000 US5242558A (en) 1988-04-30 1991-07-01 Method for forming a thin film device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1021509A JPH02202076A (en) 1989-01-31 1989-01-31 Non-linear switching element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH02202076A true JPH02202076A (en) 1990-08-10

Family

ID=12056941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1021509A Pending JPH02202076A (en) 1988-04-30 1989-01-31 Non-linear switching element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH02202076A (en)

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