JPH02206121A - Wiring structure of semiconductor element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a wiring structure of a semiconductor element.

[Conventional technology]

For example, the conventional wiring structure is described in Monthly Sem1conduct.
As described on page 79 of the December issue of orWorld l 988, a structure as shown in FIG. 3 was adopted.

[Problem to be solved by the invention]

The above conventional technology is based on the contact between dissimilar metals, the presence of moisture in the atmosphere acting on the contact, the presence of water from washing during the process, and the presence of M and M.
No consideration was given to M corrosion caused by the interaction of residual chlorine and bromine components used to etch the alloy, leading to problems such as lower yields and lower reliability in the manufacture of semiconductor devices. Ta.

The present invention aims to fundamentally solve the problem of M corrosion by adopting a structure in which the interface between dissimilar metals does not appear on the outer surface of the device.

Means for Solving the Problem] In order to achieve the above objective, the lower layer metal of the laminated wiring of different metals is covered with the upper layer metal so that the interface between the different metals does not come into direct contact with the atmosphere. .

[For production]

In the present invention, since the interface between dissimilar metals in a laminated configuration does not appear on the atmosphere side, the hydrogen generation type is generated by local battery action between dissimilar metals due to moisture or aqueous solution, or by ionization of residual chlorine and bromine components into moisture or aqueous solution. M corrosion due to local battery action can be prevented.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG. 1st
The figure shows a cross section of a wiring structure formed on an insulating film 4 of a semiconductor element, and has a structure in which the a, b, and c surfaces of a barrier metal 1, which are in direct contact with the underlying wiring and substrate, are covered with an M alloy 2. Examples of the material of the barrier metal 1 include TiN, Ti
It is a high melting point metal or an alloy of high melting point metals such as W, W, MoSi, and WSi. The material of M alloy 2 is MI
Cu, ke-Cu-8i.

It is a metal with M as a base material, such as M-Pd-8i.

The second factor shows another embodiment of the present invention, and the second factor shows another embodiment of the present invention.
This is a structure in which an antihalation film 3 is added to the structure shown in the figure to prevent halation during the photolithography process when processing the M alloy 2.

As the material of the antihalation film 3, MoSi or the like is used, for example.

To describe the method for forming this structure with reference to FIG. 1, barrier metal 1 is deposited on a wafer used for semiconductor device manufacturing using a sputtering device or CVD.
The film is formed using a device or the like.

Next, perform photolithography processing on the required pattern,
A pattern of barrier metal 1 is formed. Next, M alloy 2 is formed into a film using a sputtering device or the like so as to cover the pattern of the barrier metal 1 described above.

Subsequently, photolithography processing is performed so that the pattern of barrier metal I is completely covered. By this, M
After the photolithography process of alloy 2, barrier metal 1 is not exposed to the atmosphere. This prevents the contact interface between the barrier metal 1 and the M alloy 2 from being exposed to the atmosphere, and prevents the hydrogen-generating local battery action caused by the residual chlorine component used in the dry etching of the M alloy 2. It has the effect of preventing M corrosion.

〔Effect of the invention〕

According to the present invention, the interface between the M alloy and the high melting point metal barrier metal is not exposed to the residual components of the chlorine or bromine gas used when dry etching the M alloy. M alloys and There is no disconnection due to M corrosion in the layered wiring of the barrier metal, and it is possible to improve the manufacturing yield and reliability of semiconductor devices.

[Brief explanation of the drawing]

FIGS. 1 and 2 show M# aspects of one embodiment and another embodiment of the present invention, respectively, and FIG. 3 is a longitudinal sectional view of the prior art. FIG. 4 is a schematic diagram showing the form in which M corrosion occurs in the structure of FIG. 3. 1...Barrier metal, 2.M alloy, 3.Music/valley prevention film, 4...Insulating film, 5...
...M corrosion location・4

Claims (1)

[Claims] 1. In the laminated wiring structure of a semiconductor element made of Al or an Al alloy and a high melting point metal or a high melting point metal alloy, the above A
1. A wiring structure for a semiconductor device, characterized in that L or Al alloy surrounds the refractory metal or refractory metal alloy so as not to come into contact with the atmosphere.