JPH02208922A - Formation of deposited film - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to a method for forming a functional deposited film.

More specifically, the present invention particularly relates to amorphous (including cases exhibiting a microcrystalline phase) or multi-condensed structure used in semiconductor devices, photosensitive devices for electrophotography, line sensors for image input, imaging devices, solar cells, etc. The present invention relates to a method for forming a deposited film suitable for forming a deposited film having a non-single crystal shape.

(Description of Prior Art) For example, to form an amorphous silicon film (hereinafter referred to as a-3i film), vacuum evaporation method, plasma CVD method,
CVD methods, reactive sputtering methods, ion blating methods, photo-CVD methods, etc. have been tried, and in terms of -M, plasma CVD methods are widely used and commercialized.

However, the deposited film obtained by these deposited film forming methods, for example, the photoelectric conversion layer composed of a-3i, has poor electrical and optical properties, fatigue properties due to repeated use, or use environment characteristics. There is room for further improvement in overall characteristics in terms of productivity and mass production, including uniformity and reproducibility.

On the other hand, in order to develop a photoelectric conversion layer made of a-3L with electrical and optical properties that fully satisfy various uses, it is currently considered best to form it by plasma CVD.

However, in the case of photovoltaic elements, it is now necessary to achieve mass production with high reproducibility by satisfying the requirements of large area, uniformity of film thickness, and uniformity of film quality. In this regard, in the formation of A-3T photovoltaic converters using the conventional plasma CVD method, a large amount of capital investment is required for mass production equipment, and the management items for mass production are also complicated, resulting in a management tolerance. Problems that need to be improved in the future include the fact that the area is narrower and the adjustment of the equipment is delicate.

On the other hand, the conventional technique using the normal CVD method requires high temperatures and has not been able to provide a deposited film with practically usable characteristics.

As mentioned above, in the formation of a-3i-based photoelectric conversion, it is strongly desired to develop a formation method and apparatus that can be mass-produced using low-cost equipment while maintaining practical characteristics and uniformity.

These matters are not limited to the case of the above-mentioned a-3i film, but also apply to non-single-crystalline, single-crystalline, etc. silicon films such as polycrystalline materials, and non-single-crystalline, single-crystalline silicon films constituting other photoelectric conversion layers. The same holds true for crystalline films such as silicon nitride films, silicon carbide films, and silicon oxide films.

For the above reasons, multiple gases are introduced into the film formation space, and some of them are activated in advance with energy such as light, heat, plasma, etc., and a deposited film is formed on the substrate placed in the film formation space. An HR-CVD method has been proposed.

(Unexamined Japanese Patent Publication No. 60-41047) According to this +1 R-CV D method, for example, when forming an a-3i film, a precursor for forming a deposited film generated from a gas containing Si and H" (hydrogen A method is used in which an a-3i film is formed on a substrate by contacting active species such as radicals.A particular advantage of this method is that the degree of microcrystalline phase, which is a form of amorphous, is reduced depending on the concentration of Ho. In addition, it becomes possible to form polycrystalline silicon films at low temperatures.

Methods for forming the precursors and active species include activation using energy such as light, heat, and plasma, but the activation efficiency of the precursors and active species with respect to the introduced energy, or the generation Excitation by microwave discharge is superior in terms of utilization efficiency of precursors and active species, and difficulty in introducing contamination.

As mentioned above, one of the advantages of the HR-CVD method is that it is possible to control the crystallinity of the deposited film by changing the mixing ratio of H'' in the active species and the precursor. However, HR
- When attempting to obtain a large-area amorphous deposited film for producing devices such as solar cells and document reading sensors using the CVD method, this advantage becomes the following problem.

In other words, since the mixing ratio of the ridges and the precursor is not constant over the entire surface of the substrate, for example, areas where there is a lot of 11° increase the crystallinity and the resistance value decreases, while areas where there is a small amount of H" have a lower resistance value. Problems such as the high concentration of middle OF and causing deterioration of film quality remained.

As a solution to this problem, various attempts have been made to adjust the flow of active species and precursors, but they have disadvantages such as the complexity of the device structure and the narrow range of film forming conditions. The reality is that there is still room for further improvement in the method for forming deposited films.

[Purpose of the invention]

An object of the present invention is to provide a deposited film forming method that further improves the conventional deposited film forming method described above. It is an object of the present invention to provide a method for forming a deposited film that can easily achieve improved productivity and mass production of deposited films while improving characteristics and deposition rate.

[Structure and effects of the invention]

The present inventor has conducted intensive research to solve the problems in the conventional deposited film forming method as described above and to achieve the object of the present invention, and has found that the problems in the conventional deposited film forming method are We found that this problem can be solved by introducing active species into the deposition space.

The present invention was completed based on this knowledge, and its gist is that the precursor and the In a method for forming a deposited film in which a precursor and an active species that chemically react are introduced and brought into contact with each other to form a deposited film on the substrate, the deposited film is separately introduced from the active species (referred to as active species A). A deposited film forming method characterized by introducing a second active species (referred to as active species B) obtained by activating a hydride containing the constituent elements into a deposition space where the precursor and the active species react. be.

Note that the term "precursor" in the present invention refers to something that can serve as a raw material for a deposited film to be formed, but is completely or almost incapable of forming a deposited film in its current energy state. "Active species" are those that chemically interact with the precursor to provide energy to the precursor, or chemically react with the precursor to bring the precursor into a state where it can form a deposited film. Therefore, the active species may or may not contain constituent elements constituting the deposited film that is formed. .

Hereinafter, an apparatus suitable for carrying out the deposited film forming method of the present invention will be described.

FIG. 1 is a schematic cross-sectional view schematically showing a typical example of a deposited film forming apparatus suitable for carrying out the deposited film forming method of the present invention.

In the figure, 101 is a first raw material gas introduction pipe for introducing raw material gas, 102 is a first activation space for activating the gas introduced from the gas introduction pipe 101,
103 is a microwave power source for supplying microwave energy to activate the gas introduced into the activation space 102, and 104 is a microwave power source for transporting the raw material gas activated in the activation space 102 to the deposition space. It is a transportation space.

105 is a second raw material gas introduction pipe for introducing raw material gas, 106 is a second activation space for activating the raw material gas introduced from the gas introduction pipe 105, and 107 is an activation space 106. +08 is a microwave power source for supplying microwave energy to activate the gas introduced into the activation space 106; It is space.

109 is a third raw material gas introduction pipe for introducing the third raw material gas, 11O is an activation space for activating the gas introduced from the gas introduction pipe 109, and 111 is a pipe inside the activation space 110. electric furnace to activate the introduced gas,
112 is a transport space for transporting the raw material gas activated in the activation space 111 to the deposition space. 113 is a deposition space; 114 is a heater for heating the substrate; 11
5 is a substrate holder, and 116 is a substrate attached to the substrate holder. 117 is a vacuum exhaust pipe for evacuating the deposition space.

To form a deposited film at °C using the apparatus shown in FIG. 1, for example, H, H,
, A+', He, and other raw material gases for producing active species A are introduced and act as an activation energy source! Active species A are generated by the action of 03, and are transferred to the deposition space 11 via the transport space (A)
3 will be introduced.

On the other hand, a raw material gas for producing a precursor containing silicon atoms, such as StF, StF, Hl, Si, FaSiF+H, etc., is introduced into the activation space (C) 106 from the gas introduction pipe 105, and the activation energy 11a7 is introduced into the activation space (C) 106 from the gas introduction pipe 105. , a precursor containing silicon atoms is generated and introduced into the deposition space 113 via the transport space (C) 108.

On the other hand, a raw material gas for generating active species B, such as SiH4+5i, is introduced into the activation space (B) 110 from the gas introduction pipe 109.
zHb etc. is introduced, and an activation energy source 111 is introduced into this.
Active species B is generated by the action of transport space (B) l
12 into the deposition space 113.

The deposition space 113 is maintained at a desired pressure by a vacuum evacuation device (not shown) via a vacuum exhaust pipe 117. In this state, the precursor reacts with the active species in the deposition space,
It changes to a state where it can contribute to deposition, and is deposited on a substrate 116 mounted on a substrate holder 115 heated to a desired temperature by a heater 114, forming a desired deposited film.

FIG. 3 is a schematic diagram showing an outline of another configuration example of a deposited film forming apparatus suitable for carrying out the deposited film forming method of the present invention.

This apparatus is a deposited film forming apparatus in which two of the three independent activation and transport devices of the apparatus shown in FIG. 1 are composed of an outer cylinder and an inner cylinder of coaxial double cylinders.

In the figure, 301, 305, 309 are introduction pipes for raw material gas, 302, 306, 310 are activation spaces, 30
3 is a microwave power source for activating the gas placed in the activation spaces 302 and 306; 311 is the activation space 3;
an electric furnace for activating the gas introduced into 10, 30;
4,308° 312 is a transport space for transporting the gas activated in the activation space into the deposition chamber, and the activation space 3
02 and the transport space 306 are spaces between an outer cylinder and an inner cylinder, which are coaxial double cylinders.

To form a deposited film using the apparatus shown in FIG. 3, first, a raw material gas for producing active species A and a raw material gas for producing active species B are introduced into the quartz material through gas inlet pipes 301 and 305, respectively. are introduced into the outer cylinder and inner cylinder of a coaxial double cylinder, respectively, and are activated by the microwaves supplied by the microwave power source 303 in the activation spaces (A) 302 and (B) 306, and the transport spaces 304, It is introduced into the deposition space 313 through 308 .

Further, the raw material gas for precursor generation is introduced into the activation space (C) 310 via the gas introduction pipe 309, and is introduced into the electric furnace 31.
1 is activated by passing between the heated Sl granules, and is introduced into the deposition space 313 through the transport space 312.

The active species A and active species B precursors introduced into the deposition space in this manner mix, cause a reaction in the gas phase and/or on the substrate surface, and form a deposited film on the substrate 316.

FIG. 4 is a schematic diagram showing the outline of still another configuration example of a deposited film forming apparatus suitable for carrying out the deposited film forming method of the present invention.

This device is a type of device that uses the same microwave power source to supply activation energy to an activation space consisting of an outer cylinder, a middle cylinder, and an inner cylinder of a coaxial triple cylinder.

In the figure, 401, 405, and 409 are introduction pipes for raw material gas, 402, 406, and 410 are activation spaces, and 40
3 is a microwave power source for supplying microwave energy to activate the gas introduced into the activation space; 40
4, 408 and 412 are transport spaces for transporting the raw material gas activated in the activation space to the deposition space. 413 is a deposition space, 414 is a heater for heating the substrate, 4
15 is a substrate holder, 416 is a substrate attached to the substrate holder 115, and 417 is a vacuum exhaust pipe for evacuating the deposition space.

In the formation of a deposited film using the apparatus shown in FIG. Activation space (A) 402. Introduced into the outer cylinder, middle cylinder, and inner cylinder of the cylinder, respectively. (C)406, (B)410
, the transport space (A) 404 . is activated by microwaves supplied by a microwave power source 403 .
(C) 408° (B) Through 412, deposition space 41
3 will be introduced. In the deposition space, a deposited film is formed by mixing and reacting the introduced raw material gases.

In the present invention, the activation space (C) is introduced into the reaction space.
A precursor having a lifetime of preferably 0.01 seconds or more, more preferably 0.1 seconds or more, optimally 1 second or more is selected and used as desired, and the composition of this precursor is The element becomes the main component constituting the deposited film formed in the deposition space. In addition, the active species introduced from the activation spaces (A, B) cause a chemical reaction with precursors containing elements that will be the main components of the deposited film formed in the deposition space,
As a result, a desired deposited film is formed on a desired substrate.

In the present invention, the precursor generated in the activation space (C) and the active species generated in the activation spaces (A, B) are activated by energy such as electric discharge, light, heat, or a combination thereof. It may be produced not only by contact with a catalyst, but also by addition.

In the present invention, the raw material introduced into the activation space (B) is one in which a hydrogen atom is bonded to a carbon atom, a silicon atom, or a germanium atom.

As such, for example, XmHzn*t (n=t, 2.3-X=C, Si,
Ge).

(Xl,), (n=3 X=C, Si, Ge) Examples include.

In addition, the raw materials introduced into the activation space (C) include:
Those in which a halogen atom is bonded to a carbon atom, silicon atom, or germanium atom are used. As such, for example, YaXg+%+z (n=1.2.3-X-F, C
1, Br, I Y=C, Si, Ge).

(yxz)a (n=3゜X=F, Cj!, Br, IY=C, S i
, Ge).

Y, IHXta++ (n = 1, 2, 3
-X-F, CI, Br, I.

Y=CS l, Ge).

Y-H*Xz-(n = 1, 2, 3-X=F
, CI, Br, I Y=C, Si, Gs).

Examples include.

Specifically, for example, CF4+CzFb, 5iF4(
SiFz)s, (StFz)a, (SiFz)a
l 5izFbSiHFi +S+HiFz +5i
Cj! 4, (StCj!z)5゜SiBr4+ (S
Examples include gas-containing or easily gasifiable substances such as iBrz)s, GeFa, and GezFh.

Further, SIH (CiHsh), SiH*(CN)z, etc. may also be used depending on the intended use of the deposited film to be formed.

In the present invention, the raw materials introduced into the activation space (A) to generate active species include He in addition to H2.

Ar or a mixture thereof is used.

FIG. 2 is a diagram for explaining an example of the structure of a typical photoconductive member obtained by the deposited film forming method of the present invention.

The photoconductive member 200 shown in FIG. 2 has a layered structure consisting of a photoconductive layer 202 and a gap-type electrode 203 on a support 201 for the photoconductive member.

The support 201 needs to be electrically insulating.

For example, the support 201 may be made of polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride,
Films or sheets of synthetic resins such as polystyrene and polyamide, glass, ceramics, etc. are usually used.

The thickness of the photoconductive layer 202 shown in FIG. 2 is determined as appropriate depending on the intended layer of the semiconductor device to which it is applied, but is preferably 0.05 to 100 μm, more preferably 0.1 μm. It is desirable that the thickness be in the range of ~50μ, most preferably in the range of 0.5 to 30μ.

I(
or the sum of the amounts of H and X (halogen atoms such as X-F) is preferably 1 to 40 at%, more preferably 5 to
It is desirable that the content be 30 atomic %. The upper limit of the amount of X alone is preferably 10 atomic %, more preferably 1 atomic %, and optimally 0.5 atomic %, in the photoconductive layer 20.
In order to make 2 an n-type or p-type as necessary, by doping an n-type impurity, a p-type impurity, or both impurities into the formed layer while controlling the amount thereof during layer formation. will be accomplished. The impurity doped into the photoconductive layer is an element of group Ⅰ A of the periodic table, such as B, as a p-type impurity.

Preferred examples include AI, Ga, In, and TI, and preferred n-type impurities include elements of group V A of the periodic table, such as N, P, As, sb, and Bi. However, BGa, P, As, Sb, etc. are particularly suitable.

In the present invention, the photoconductor 7 has a desired conductivity type.
The amount of impurities doped into 1202 is appropriately determined depending on the desired electrical and optical properties, but in the case of impurities in Group ⅠA of the periodic table, 3
Doping may be carried out in the following amount range, and in the case of impurities belonging to Group Ⅰ A of the periodic table, doping may be carried out in an amount range of 5 x 10 -3 atomic % or less.

In order to dope impurities into the photoconductive layer 202, a raw material for impurity introduction may be introduced in a gaseous state into any of the activation spaces (A), (B), and (C) during layer formation. In that case, it is introduced together with either the precursor raw material gas or the active species raw material gas.

As the raw material for introducing such impurities, those that are in a gaseous state at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions, are employed.

Examples of starting materials for introducing such impurities include PH3, PzHa, PF2, PFs, PCl5゜A3H3+ AsFz +AsF5 +AaCl+5
b) Is+SbF5, BF3, BCji, BBr
z, B*Hi +B4H+o, BsH*, BsH
++, BaHto, BaHto.

Examples include AJC13. Gap electrode 20
3 may be formed after forming the photoconductive layer 202, or conversely, after forming the gap electrode 203 on the support 201, the photoconductive layer 202 may be formed.

Any conductive material can be used for the gap 203 electrode, but preferably one that makes ohmink contact with the photoconductive layer 202.

Photoconductive 12 is a conductive material that makes ohmic contact.
When non-doped a-9iX:FH film is used for 02,
Doped with a large amount of low work function metals such as AJ and In or group II elements such as P or As (Il usually 110
0 pp or more), a low resistance a-3IX:FH film, etc. are used.

〔Example〕

EXAMPLES Hereinafter, the method of the present invention will be specifically described with reference to Examples, but the present invention is not limited thereto.

f In the apparatus shown in Figure 1, the transport space (A) for active species A
The air outlet of 104 is located at a position of 80 mm from the center of the substrate, the air outlet of the precursor transport space (C) 108 is also located at a position of 501, and the air outlet of the active species B transport space (B) 112 is also located at a position of 401. An amorphous silicon l1l (aSi:FH film) was produced on a glass substrate by the following operations using a deposited film forming apparatus set at the respective positions.

First, the glass substrate 116 was fixed on the substrate holder 115 in the deposition space 113, an exhaust valve (not shown) was opened, and the deposition space 113 was evacuated to a degree of vacuum of about 10 Torr. Next, the temperature of the glass substrate was maintained at about 250° C. by a heating heater 114.

H2 gas 20sccm as raw material gas for generating active species A
A mixed gas of 250scca+ and Ar gas is activated in the activation space (
A) It was introduced into 102.

S as a raw material gas for producing a precursor containing silicon atoms
t F4 gas 50scc++ activation space (C) 106
It was introduced in SiH as a raw material gas for active species B generation,
1Oscc of gas was introduced into the activation space (B) 110.

After the flow rate is stabilized, adjust the exhaust valve to open the deposition space 11.
The internal pressure of No. 3 was approximately 0.3 Torr. After the internal pressure becomes constant, turn on the microwave (2450MHz) power supply 103,1.
07 was operated, and discharge energy of 160 W and 200 W was applied to the activation spaces 102 and 106, respectively. Further, the electric furnace 111 was energized, and the temperature of the activation space CB>110 was set to 550°C.

This state was maintained for 30 minutes, and an a-3tFH film (1) having a thickness of about 1.0 μm was deposited on the glass substrate 116 in the deposition space 113.

For comparison, the electric furnace 111 was not energized and the activation space (B
) 110 was formed under the same conditions except that the temperature remained at room temperature.
A 9 pm thick a-3i:FH film (II) was deposited.

A comb-shaped A1 electrode (gear length 25 mm, gap distance 0.2 m) was applied to the surface of the a-3i:FH film obtained by both methods by vacuum evaporation to a thickness of about 500 mm, and a voltage was applied. , the current was measured during light irradiation with a wavelength of 633 nm s and an intensity of 2 mW/- and in the dark, and the ratio between the two was recorded. This measurement was performed 1 hour and 24 hours after film formation to check the degree of change.

As a result, the degree of deterioration in the a-3L:FH film (1) was slight, and was 1/3 that of the a-3i:FH film (II).
It was lO.

Further, when the F concentration in both films was compared by StMS, it was found to be F concentration (1)/F concentration (11) -1/9.

Furthermore, the variation in film thickness within the plane of the 8 cm x 8 C- substrate was within 10%, and the variation in conductivity in the dark was within 20%.

Press 11 In the device shown in FIG. 3, the distance between the center of the base 316 and the inner cylinder is 70 mm, and the distance between the center of the base plate 316 and the outer cylinder is 4 mm.
0 m, and the center of the board 316 and the transportation space (C)
Using a deposited film forming apparatus with a distance of 49 mm from the outlet of the
: FHIII was produced on a glass substrate.

First, the glass substrate 316 was fixed on the substrate holder 315 in the deposition space 313, an exhaust valve (not shown) was opened, and the deposition space 313 was evacuated to a vacuum level of about 10-'' Torr. The temperature of the glass substrate was maintained at about 250° C. by a heater 314 installed in a substrate holder 315.

H8 gas for 20 sec as raw material gas for generating active species A
Gas inlet pipe 3
GeHn (5iHa) diluted with 5iHa is introduced into the activation space (A) 302 through
%) gas for 10 seconds was introduced into the activation space (B) 302 via the gas introduction pipe 305.

In addition, 50s of 5iFa gas was used as a raw material gas for precursor generation.
cc■ into the activation space (C) 3 via the gas introduction pipe 309
It was introduced in 10.

After the flow rate became stable, the exhaust valve was adjusted to bring the internal pressure of the deposition space to 0.3 Torr. After the internal pressure becomes constant, the micro-electrified B503 is operated, and the activation space 302,
306 was charged with 200W of discharge energy. Further, the electric furnace 311 was energized to heat the SI granules packed in the activation space (C) 310 to 1400°C.

Hold this state for 30 minutes, and place about 1 inch on the glass substrate 316.
．． 6 pm thick a-3iGe: FHII(iH
) was deposited.

For comparison, Si was used as the raw material gas for generating active species B.
When a film was formed under the same conditions except that 1Oscc+m of GeH4 (5%) gas diluted with F4 was used, about 1.4 μm thick a-3iGe was deposited on the glass substrate 316:
An FH membrane (■) was obtained.

A comb-shaped A1 electrode was vacuum-deposited on the surface of a-5IGe:FHH obtained by both methods in the same manner as in Example 1, and the properties were measured in the same manner as in Example 1. As a result, a-3LGe:
The degree of deterioration in the FH film (1) is a-3iGe:
It was about 115 compared to FHIII(II).

In addition, when the F concentration in both films was compared using S fMs, it was found that F r1 degree (+) Ztte degree ([[) = 1
/6.

Also, the variation in film thickness within the substrate surface of 8×8cs is 1
The variation in dark conductivity was within 18%.

In the device shown in FIG. 4, the center of the substrate 416 and the outer cylinder,
The distance between the middle cylinder and inner cylinder is 40mm, 70-l, and 50m, respectively.
An n-type a-3t:FHlfi was produced on a glass substrate by the following operations using a deposited film forming apparatus set to m.

First, a glass substrate 416 is fixed on a substrate holder 415 in a deposition space 413, an exhaust valve (not shown) is opened, and the deposition space 413 is evacuated to a vacuum level of about 10-' Torr. A heater 414 installed in a holder 415 lowers the temperature of the glass substrate by approximately 2
It was maintained at 50°C.

As a raw material gas for generating active species A, H, gas for 20 sec.
A mixed gas of m and Ar gas at 250 sccm is introduced into the gas inlet pipe 4.
01 into the activation space (A) 402. SiF as raw material gas for precursor generation, gas 50sec+
was introduced into the activation space (C) 406 via the gas introduction pipe 405. S i H as raw material gas for generating active species 8
10scc of a gas was diluted with Ar gas as an n-type doping gas.
) 5 seconds of gas was introduced into the activation space (B) 410 via the gas introduction pipe (B) 409.

After the flow rate became stable, the exhaust valve was adjusted to bring the internal pressure of the deposition space to 0.3 Torr. After the internal pressure becomes constant, the microwave power source 403 is operated, and the activation space 402,
200W of discharge energy was applied to 406.410.

Hold this state for 30 minutes, and place about 1 inch on the glass substrate 416.
．． A 7 μm thick n-type a-3ii FH film (1) was deposited.

For comparison, S was used as the raw material gas for generating active species B.
When a film was formed under the same conditions except that IFa gas was used, a film of about 1.5
, IJ m thick n-type a-31:FH film (n) was obtained.

The n-type a-3i:FH peritoneal F concentration obtained by both methods was
When measured by IMS, F1 degree (1) / F concentration (It) = 1/3, and when localized level density was measured by ESH, it was Nt (1) / Nt (It) - 1/4
Met. In addition, when we measured the conductivity in the dark, we found that σ(■
)/σ(It)=5.

Moreover, the variation in film thickness within the plane of the 8cs×8cm substrate was within 13%, and the variation in dark conductivity was within 22%.

[Summary of Effects of the Invention] As described above in detail, the following effects were obtained by the deposited film forming method of the present invention.

First, the degree of Ffa in the deposited film was reduced, and as a result, the phenomenon of film quality deterioration was greatly reduced.

Second, the uniformity of film thickness and film quality is improved, and as a result, the manufacturing equipment for large-area amorphous deposited films is simple, and the manufacturing conditions are widened, which improves productivity and cost. It turned out to be very advantageous.

The above effects are important in the production of large area devices such as solar cells and document reading sensors.

[Brief explanation of the drawing]

FIG. 1, FIG. 3, and FIG. 4 are schematic diagrams of a deposited film forming apparatus suitable for carrying out the deposited film forming method of the present invention, respectively. FIG. 2 is a schematic diagram of a typical photoconductive member produced using the deposited film forming method of the present invention. In the figure, 101, 105, 109, 301° 305
．． 309,401,405.409... Raw material gas introduction pipe, 102,106,110,302゜306.310
, 402, 406, 410...activation space, 103,
107,303,403...Microwave power supply, 104
,108,112,304゜308.312,404,
408.412...Transportation space, 111,311...
Electric furnace, 113,313°413...Reaction/deposition space, 114,314.414 Heating heater, 115,31
5.415...Substrate holder, 116,316.41
6...Base body, 117°317.417...Exhaust pipe,
201... Substrate, 202... Photoconductive layer, 203...
・Metal electric bridge.

Claims (1)

[Claims] Activate the source gas in the deposition space where the substrate is installed,
In a deposited film forming method, a deposited film is formed on the substrate by introducing a precursor to be used for forming the obtained deposited film and an active species that chemically reacts with the precursor and bringing them into contact. A method for forming a deposited film, characterized in that a second active species obtained by activating a hydride containing constituent elements of the deposited film, separately from the seed, is introduced into the deposition space where the precursor and the active species react. .