JPH02209466A - Production of grain-oriented silicon sheet reduced in iron loss - Google Patents
Production of grain-oriented silicon sheet reduced in iron lossInfo
- Publication number
- JPH02209466A JPH02209466A JP2999689A JP2999689A JPH02209466A JP H02209466 A JPH02209466 A JP H02209466A JP 2999689 A JP2999689 A JP 2999689A JP 2999689 A JP2999689 A JP 2999689A JP H02209466 A JPH02209466 A JP H02209466A
- Authority
- JP
- Japan
- Prior art keywords
- steel sheet
- silicon steel
- ion plating
- coating
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Chemical Treatment Of Metals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は、低鉄損一方向性けい素鋼板の製造方法に関
し、とくに該鋼板の形状劣化を招く不利なしに、該綱板
表面に緻密なセラミック被膜を被成しようとするもので
ある。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for manufacturing a low core loss unidirectional silicon steel sheet, and in particular, the present invention relates to a method for producing a low iron loss unidirectional silicon steel sheet, and in particular, a method for producing a unidirectional silicon steel sheet with a dense structure on the surface of the steel sheet without the disadvantage of deteriorating the shape of the steel sheet. The aim is to form a ceramic coating with a high quality.
(従来の技術)
最近、発明者らは、仕上げ焼鈍済の一方向性けい素鋼板
の表面酸化物を除去し、ついで研磨処理を施したのち、
この研磨表面にPVDやCVD処理によって窒化物や炭
化物などの薄膜の張力被膜を被成させることからなる鉄
損低減技術を開発した(たとえば特公昭63−3284
9号、同63−32850号、同63−35684号、
同63−35685号、同63−35686号および同
63−3285号各公報)。(Prior Art) Recently, the inventors have removed surface oxides from a finish-annealed unidirectional silicon steel sheet, and then subjected it to a polishing treatment.
We developed an iron loss reduction technology that consists of forming a thin tension film of nitride or carbide on this polished surface by PVD or CVD treatment (for example, Japanese Patent Publication No. 63-3284
No. 9, No. 63-32850, No. 63-35684,
Publications No. 63-35685, No. 63-35686, and No. 63-3285).
上記の被膜形成法のうちとくにPVD法は、CVD法よ
りも高速成膜が可能でしかも低温で成膜できることから
、低鉄損一方向性けい素鋼板の製造に適している。その
中でもとくにHCD (I(ollow Cathod
eDischarge)法は、緻密で平滑なセラミック
が得られ、しかも比較的高速での成膜が可能であること
からかかるけい素鋼板の製造に最適であるとされている
。Among the above-mentioned film forming methods, the PVD method is particularly suitable for manufacturing a unidirectional silicon steel sheet with low core loss because it can form a film at a higher speed and at a lower temperature than the CVD method. Among them, HCD (I(ollow cathod)
The eDischarge method is said to be most suitable for manufacturing such silicon steel sheets because it produces a dense and smooth ceramic and can form a film at a relatively high speed.
しかしながら被処理材であるけい素鋼板とくに薄肉のけ
い素鋼板に、上記の方法によってセラミック被膜を被成
した場合には、局部的な膨張、収縮による局部歪みによ
って鋼板の形状が悪化する不利があった。However, when a ceramic coating is applied to a silicon steel plate, especially a thin silicon steel plate, which is the material to be treated, by the above method, there is a disadvantage that the shape of the steel plate deteriorates due to local distortion due to local expansion or contraction. Ta.
(発明が解決しようとする課題)
しかしながら現在までのところ、磁気特性および被膜密
着性に優れ、しかも鋼板形状を損なうことのないイオン
プレーティング法はまだなく、その開発が望まれていた
。(Problems to be Solved by the Invention) However, to date, there has been no ion plating method that has excellent magnetic properties and film adhesion and does not damage the shape of the steel sheet, and its development has been desired.
この発明の目的は、上記の要請に有利に応え得る新規な
イオンプレーティング法を活用した低鉄損一方向性けい
素鋼板の有利な製造方法を提案するところにある。An object of the present invention is to propose an advantageous method for producing a low core loss unidirectional silicon steel sheet using a novel ion plating method that can advantageously meet the above requirements.
(課題を解決するための手段)
さて発明者らは、上記の問題を解決すべく鋭意研究を重
ねたところ、仕上げ焼鈍法の一方向性けい素鋼板の表面
に対しイオンプレーティングによってセラミック被膜を
被成するに際し、かかるイオンプレーティング処理を多
段階に分け、各段階における処理条件とくにコーティン
グ温度およびバイアス電圧さらには蒸着レイトを制御す
ることにより、極めて効果的に被膜密着性に優れるのは
言うまでもなく鋼板形状に優れ従って磁気特性にも優れ
た一方向性けい素鋼板が得られることの知見を得た。(Means for Solving the Problems) The inventors have conducted extensive research to solve the above problems and have found that a ceramic coating is applied to the surface of a unidirectional silicon steel sheet by finish annealing by ion plating. Needless to say, by dividing the ion plating process into multiple stages and controlling the processing conditions at each stage, especially the coating temperature, bias voltage, and vapor deposition rate, excellent film adhesion can be achieved extremely effectively. We have obtained the knowledge that a unidirectional silicon steel sheet with excellent steel sheet shape and therefore excellent magnetic properties can be obtained.
この発明は、上記の知見に立脚するものである。This invention is based on the above knowledge.
すなわちこの発明は、仕上げ焼鈍を経た一方向性けい素
鋼板につき、その表面酸化物を除去し、ついで研磨によ
り鋼板表面を中心線平均粗さRaで0.4μm以下の鏡
面に仕上げたのち、HCD方式のエアー・ツー・エアー
連続イオンプレーティングによってセラミック被膜を被
成して成る一方向性い素鋼板の製造方法において、
上記のイオンプレーティング処理を多段階に分けて行う
ものとし、初期段階ではコーティング温度およびバイア
ス電圧を高く設定すると共に蒸着レイトを低くして鋼板
との密着性を確保し、一方後半段階ではコーティング温
度およびバイアス電圧を低く設定し、しかも高蒸着レイ
トの下で上記方式によるコーティングを行うことからな
る低鉄損一方向性けい素鋼板の製造方法である。That is, this invention involves removing surface oxides from a unidirectional silicon steel plate that has undergone finish annealing, and then polishing the steel plate surface to a mirror finish with a centerline average roughness Ra of 0.4 μm or less, and then applying HCD. In the method for producing unidirectional raw steel sheets coated with a ceramic coating by continuous air-to-air ion plating, the above ion plating treatment is carried out in multiple stages. The coating temperature and bias voltage are set high and the evaporation rate is low to ensure adhesion to the steel plate, while in the latter stage the coating temperature and bias voltage are set low and the deposition rate is set low to achieve coating using the above method. This is a method for manufacturing a low core loss unidirectional silicon steel sheet.
以下、この発明を由来するに到った実験結果について説
明する。Below, the experimental results that led to this invention will be explained.
C:0.043wtχ(以下単に%で示す) 、 Si
:3.44%Mn:0.072%、 Se:0.021
%、 Sb:0.025%および:0.012、%を含
有する組成になるけい素鋼スラブを、1350°Cで4
時間加熱後、熱間圧延を施して2.2閣厚の熱延板とし
た。ついで950°Cの中間焼鈍を挾む2回の冷間圧延
を施して0.20mm厚の最終冷延板とした。その後8
20°Cの湿水素中で脱炭を兼ねる一次再結晶焼鈍を施
したのち、鋼板表面上に65%A1zOs、30%−M
gO+ 5%−ZrOz組成になる焼鈍分離剤を塗布
してから、850°C150時間の2次再結晶焼鈍つい
で軟水素中で1200. 8時間の純化焼鈍を施した。C: 0.043wtχ (hereinafter simply expressed as %), Si
:3.44%Mn:0.072%, Se:0.021
A silicon steel slab having a composition containing 0.025% and 0.012% Sb was heated at 1350 °C to 4
After heating for a period of time, hot rolling was performed to obtain a hot rolled sheet having a thickness of 2.2 mm. Then, cold rolling was performed twice with intermediate annealing at 950° C. to obtain a final cold rolled sheet having a thickness of 0.20 mm. then 8
After primary recrystallization annealing that also serves as decarburization in wet hydrogen at 20°C, 65% A1zOs and 30% -M were deposited on the surface of the steel plate.
After applying an annealing separator having a gO+ 5%-ZrOz composition, secondary recrystallization annealing was performed at 850°C for 150 hours, and then 1200°C in soft hydrogen. Purification annealing was performed for 8 hours.
ついで酸洗によってけい素鋼板表面上の酸化物を除去し
たのち、電解研磨により中心線平均粗さRaで0.2μ
mの鏡面状態に仕上げた。Next, oxides on the surface of the silicon steel sheet were removed by pickling, and then electrolytically polished to a center line average roughness Ra of 0.2μ.
Finished with a mirror finish of m.
次に上記の鏡面仕上げ表面に、第1図に示すエアー・ツ
ー・エアー連続イオンプレーティング装置を用いてTi
Nのセラミック被膜を1μm厚に被成した。同図におい
て番号1はコイル、1′はコーティング処理後のコイル
、2はシャー、そして3は差圧室であり、この差圧室3
は入側差圧室3−1〜3−8と出側差圧室3−9〜3−
16とからなっている。Next, Ti was applied to the mirror-finished surface using the air-to-air continuous ion plating device shown in Figure 1.
A ceramic coating of N was formed to a thickness of 1 μm. In the figure, number 1 is the coil, 1' is the coil after coating, 2 is the shear, and 3 is the differential pressure chamber.
are the inlet differential pressure chambers 3-1 to 3-8 and the outlet differential pressure chambers 3-9 to 3-.
It consists of 16.
4−1および4−2はそれぞれ鋼板表裏面の予熱装置、
5−1〜5−8はいづれもホットローラーである。6は
第1蒸着室であり、6−1は蒸着源、6−2はるつぼ、
6−3は榛原料供給装置、6−4は反応ガス、6−5は
ガイドローラーである。同じ<7.8.9はそれぞれ第
2.第3.第4蒸着室であり、7−1.8−L9−1は
蒸着源、7−2.8−2.9−2はるつぼ、7−3゜8
−3.9−3は棒料供給装置、7−4.8−4.9−4
は反応ガス、7−5.8−5.9−5はガイドローラー
である。4-1 and 4-2 are preheating devices for the front and back surfaces of the steel plate, respectively;
5-1 to 5-8 are all hot rollers. 6 is a first vapor deposition chamber, 6-1 is a vapor deposition source, 6-2 is a crucible,
6-3 is a raw material supply device, 6-4 is a reaction gas, and 6-5 is a guide roller. The same <7.8.9 are the second. Third. This is the fourth vapor deposition chamber, where 7-1.8-L9-1 is a vapor deposition source, 7-2.8-2.9-2 is a crucible, and 7-3°8
-3.9-3 is rod feeder, 7-4.8-4.9-4
is a reaction gas, and 7-5.8-5.9-5 is a guide roller.
なお10−1および10−2はそれぞれローラーバルブ
である。Note that 10-1 and 10-2 are roller valves, respectively.
さて上記の連続イオンプレーティング装置において、被
処理材であるけい素鋼ストリ・ノブは、入側差圧室から
内部に導入されるわけであるが、この入側差圧室は部屋
が多分割されていて内部に向かうに従って真空度が次第
に高まるしくみとされ、差圧室3−8ではI Xl0−
’Torr程度となっている。Now, in the above-mentioned continuous ion plating apparatus, the silicon steel strip knob, which is the material to be treated, is introduced into the interior from the entrance differential pressure chamber, and this entrance differential pressure chamber is divided into multiple chambers. The degree of vacuum gradually increases toward the inside, and in the differential pressure chamber 3-8, IXl0-
It is about ' Torr.
ついでストリップはさらに高真空(5X 10−6To
rr程度)に保持された予熱装置4に導入され、ここで
エレクトロンビーム (EB)を板幅方向に走査して鋼
板の予熱と表面のクリーニングを行う。ついで第1.2
.3および4蒸着室を順次に通板する間にストリップの
表裏面に表面第1層、裏面第1層、表面第2層、および
裏面第2層の順でセラミック被膜を被成するわけである
。The strip is then further vacuumed (5X 10-6To
The steel sheet is introduced into the preheating device 4, which is maintained at a temperature of about 100 mm (approx. Next, Part 1.2
.. While sequentially passing through deposition chambers 3 and 4, ceramic coatings are formed on the front and back surfaces of the strip in the order of the first layer on the front, the first layer on the back, the second layer on the front, and the second layer on the back. .
上記の連続イオンプレーティング装置を用いて表1に示
す種々のコーティング条件の下にTiNを1μm厚に被
成(ラインスピード10 m/min ) シたときの
鋼板形状と磁気特性について調べた結果を、表1に併記
する。The results of investigating the shape and magnetic properties of the steel sheet when TiN was coated to a thickness of 1 μm (line speed 10 m/min) using the above continuous ion plating equipment under the various coating conditions shown in Table 1 are as follows. , are also listed in Table 1.
同表より明らかなように、表裏面とも第1層目は鋼板温
度およびバイアス電圧は高くかつ蒸着レイトは低くする
一方、第2層目は逆に鋼板温度およびバイアス電圧は低
くかつ蒸着レイトは高くすることにより、磁気特性に優
れしかも板形状も良好なけい素鋼板が得られている。As is clear from the table, the steel plate temperature and bias voltage are high and the evaporation rate is low for the first layer on both the front and back surfaces, while for the second layer, on the contrary, the steel plate temperature and bias voltage are low and the evaporation rate is high. By doing so, a silicon steel plate with excellent magnetic properties and a good plate shape has been obtained.
(作用)
この発明に従い、イオンプレーティング処理を多段階に
分け、初期段階ではコーティング温度を高くかつバイア
ス電圧を高く設定し、しかも蒸着レイトを低くすること
によって鋼板に対し強固に密着した被膜が被成され、一
方後半段階ではコーティング温度を低くかつバイアス電
圧を低く設定し、しかも蒸着レイトを高くして大量のコ
ーティングを施すことにより、比較的短時間で密着性お
よび膜質に優れたセラミック被膜を、板形状の劣化を招
く不利なしに効果的に被成できるわけである。(Function) According to the present invention, the ion plating process is divided into multiple stages, and in the initial stage, the coating temperature is set high and the bias voltage is set high, and the deposition rate is low, so that a film that firmly adheres to the steel plate is formed. On the other hand, in the later stages, the coating temperature is set low, the bias voltage is set low, and the deposition rate is increased to apply a large amount of coating, thereby creating a ceramic coating with excellent adhesion and film quality in a relatively short period of time. This means that it can be effectively deposited without the disadvantage of deterioration of the plate shape.
なおこの発明において、初期段階のイオンプレーティン
グ処理におけるコーティング温度およびバイアス電圧は
それぞれ300−500°C,50〜150V程度、ま
た蒸着レイトは0.5〜2.5μm/min程度とする
のが好ましい。一方後段のイオンプレーティング処理に
おけるコーティング温度およびバイアス電圧はそれぞれ
200〜400°C,10〜50V程度、また蒸着レイ
トは2.0〜8.0 μm/min程度とするのが好ま
しい。 なお初期段階におけるイオンプレーティング膜
厚は全膜厚の30%以下程度とするのが好適である。In this invention, it is preferable that the coating temperature and bias voltage in the initial stage of ion plating treatment are approximately 300-500°C and 50-150V, respectively, and the deposition rate is approximately 0.5-2.5 μm/min. . On the other hand, the coating temperature and bias voltage in the subsequent ion plating treatment are preferably about 200 to 400°C and about 10 to 50 V, respectively, and the deposition rate is preferably about 2.0 to 8.0 μm/min. Note that the ion plating film thickness at the initial stage is preferably about 30% or less of the total film thickness.
さらにこの発明に従うイオンプレーティング法は金属ス
トリップのみならず切り板にも適用できるのは言うまで
もない。Furthermore, it goes without saying that the ion plating method according to the present invention can be applied not only to metal strips but also to cut plates.
(実施例)
C:0.043%、 Si:3.39%、 Mn:0.
072%、 Se:0.021%、 Mo:0.013
%およびSb:0.025%を含有する組成になるけい
素鋼熱延板を、冷延2回法によって0.20鵬厚の最終
冷延板としたのち、脱炭・1次再結晶焼鈍を施し、つい
で2次再結晶焼鈍および純化焼鈍を施したのち、酸洗に
より表面酸化物を除去後、電解研磨により鋼板表面をR
aで0.8μm以一
下の鏡面状態に仕上げた。(Example) C: 0.043%, Si: 3.39%, Mn: 0.
072%, Se: 0.021%, Mo: 0.013
% and Sb: A hot-rolled silicon steel sheet having a composition containing 0.025% was made into a final cold-rolled sheet with a thickness of 0.20 mm by a two-step cold rolling method, and then decarburized and primary recrystallization annealed. Then, after performing secondary recrystallization annealing and purification annealing, surface oxides were removed by pickling, and the surface of the steel plate was Rized by electrolytic polishing.
It was finished in a mirror-like state with a thickness of 0.8 μm or less.
その後前掲第1図に示したHCD方式のエアー・ツー・
エアー連続イオンプレーティング装置を用いて、通板速
度:12 m/minの条件下にTjN被膜を0.8μ
m厚に被成した。なおこのときのコーティング条件は次
のとおりである。After that, the HCD type air-to-air system shown in Figure 1 above was installed.
Using an air continuous ion plating device, the TjN film was deposited at a thickness of 0.8 μm at a threading speed of 12 m/min.
It was coated to a thickness of m. The coating conditions at this time were as follows.
j)第1層目
ホットローラー温度:420°C
バイアス電圧:60v
HCD条件: 1000 A 、 70 Vii)第2
層目
ホットローラー温度:300°C
バイアス電圧=15v
HCD条件: 1500 A 、 80 Vかくして得
られた製品板の磁気特性は
B +o : 1.92 T 、 WIT/S : 0
.75 W/kgであり、また板形状も極めて良好であ
った。j) First layer hot roller temperature: 420°C Bias voltage: 60v HCD conditions: 1000 A, 70 Vii) Second
Layer hot roller temperature: 300°C Bias voltage = 15V HCD conditions: 1500 A, 80 V The magnetic properties of the product board thus obtained are B+o: 1.92 T, WIT/S: 0
.. 75 W/kg, and the plate shape was also very good.
(発明の効果)
かくしてこの発明によれば、けい素鋼板の表面に密着性
および膜質に優れたセラミック被膜を板形状を損なうこ
となしに被成することができ、従って磁気特性および形
状品質とも優れた一方向性けい素鋼板を得ることができ
る。(Effects of the Invention) Thus, according to the present invention, a ceramic coating with excellent adhesion and film quality can be formed on the surface of a silicon steel plate without damaging the plate shape, and therefore has excellent magnetic properties and shape quality. A unidirectional silicon steel sheet can be obtained.
第1図は、この発明の実施に用いて好適なHCD方式エ
アー・ツー・エアー連続イオンプレーティング装置の模
式図である。
1・・・コイル
1′・・・コーティング処理後のコイル2・・・シャー
3・・・差圧室
4・・・予熱装置
5・・・ホットローラー
6.7,8.9・・・蒸着室
10・・・ローラーバルブFIG. 1 is a schematic diagram of an HCD type air-to-air continuous ion plating apparatus suitable for use in carrying out the present invention. 1... Coil 1'... Coil after coating 2... Shear 3... Differential pressure chamber 4... Preheating device 5... Hot rollers 6.7, 8.9... Vapor deposition Chamber 10...Roller valve
Claims (1)
表面酸化物を除去し、ついで研磨により鋼板表面を中心
線平均粗さRaで0.4μm以下の鏡面に仕上げたのち
、HCD方式のエアー・ツー・エアー連続イオンプレー
ティングによってセラミック被膜を被成して成る一方向
性けい素鋼板の製造方法において、 上記のイオンプレーティング処理を多段階に分けて行う
ものとし、初期段階ではコーティング温度およびバイア
ス電圧を高く設定すると共に蒸着レイトを低くして鋼板
との密着性を確保し、一方後半段階ではコーティング温
度およびバイアス電圧を低く設定し、しかも高蒸着レイ
トの下で上記方式によるコーティングを行うことを特徴
とする低鉄損一方向性けい素鋼板の製造方法。[Claims] 1. Surface oxides are removed from a unidirectional silicon steel plate that has undergone finish annealing, and the steel plate surface is then polished to a mirror finish with a centerline average roughness Ra of 0.4 μm or less. Later, in a method for manufacturing grain-oriented silicon steel sheets coated with a ceramic coating by air-to-air continuous ion plating using the HCD method, the above ion plating treatment was performed in multiple stages. In the initial stage, the coating temperature and bias voltage are set high and the evaporation rate is low to ensure adhesion to the steel plate, while in the latter stage the coating temperature and bias voltage are set low and the deposition rate is set low to achieve the above-mentioned properties. A method for producing a low iron loss unidirectional silicon steel sheet, which is characterized by coating according to a method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2999689A JPH02209466A (en) | 1989-02-10 | 1989-02-10 | Production of grain-oriented silicon sheet reduced in iron loss |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2999689A JPH02209466A (en) | 1989-02-10 | 1989-02-10 | Production of grain-oriented silicon sheet reduced in iron loss |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02209466A true JPH02209466A (en) | 1990-08-20 |
Family
ID=12291542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2999689A Pending JPH02209466A (en) | 1989-02-10 | 1989-02-10 | Production of grain-oriented silicon sheet reduced in iron loss |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02209466A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019188976A1 (en) * | 2018-03-30 | 2019-10-03 | Jfeスチール株式会社 | Method for producing grain-oriented electrical steel sheet and continuous film-forming device |
-
1989
- 1989-02-10 JP JP2999689A patent/JPH02209466A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019188976A1 (en) * | 2018-03-30 | 2019-10-03 | Jfeスチール株式会社 | Method for producing grain-oriented electrical steel sheet and continuous film-forming device |
| JPWO2019188976A1 (en) * | 2018-03-30 | 2020-04-30 | Jfeスチール株式会社 | Method for producing grain-oriented electrical steel sheet and continuous film forming apparatus |
| KR20200118850A (en) * | 2018-03-30 | 2020-10-16 | 제이에프이 스틸 가부시키가이샤 | Method for manufacturing grain-oriented electrical steel sheet and continuous film forming apparatus |
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