JPH02215080A - Thin film el element - Google Patents
Thin film el elementInfo
- Publication number
- JPH02215080A JPH02215080A JP1034462A JP3446289A JPH02215080A JP H02215080 A JPH02215080 A JP H02215080A JP 1034462 A JP1034462 A JP 1034462A JP 3446289 A JP3446289 A JP 3446289A JP H02215080 A JPH02215080 A JP H02215080A
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- film
- thin film
- oxide
- fluorescent layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 35
- 150000004767 nitrides Chemical class 0.000 claims abstract description 40
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 39
- 239000003989 dielectric material Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、ニレクートロルミネセンス（ＢＬ）現象を利
用した薄膜ＥＬ素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a thin film EL device that utilizes the phenomenon of BL (black light).
「従来技術と発明が解決しようとする課題」第２図は、
従来の２重＠縁構造の薄膜ＥＬ素子を示すものである。"Prior art and the problem to be solved by the invention" Figure 2 is
1 shows a conventional double @edge structure thin film EL device.
この薄膜ＥＬ素子は、ガラス基板！上に透明電極２と、
誘電体層３と、蛍光層４と、誘電体層５と対向電極６と
が順次積層されてなるものである。This thin film EL element uses a glass substrate! Transparent electrode 2 on top,
A dielectric layer 3, a fluorescent layer 4, a dielectric layer 5, and a counter electrode 6 are laminated in this order.
前記誘電体１！Ｉ３，５の役割は、蛍光層４を電気的な
破壊から保護すると共に、電極２．６から蛍光層４への
イオン拡散を防止することにある。Said dielectric 1! The role of I3,5 is to protect the fluorescent layer 4 from electrical damage and to prevent ion diffusion from the electrode 2.6 to the fluorescent layer 4.
初期の薄膜ＥＬ素子の誘電体層３．５は酸化物で形成さ
れていた。ところがこのように酸化物で誘電体層３．５
を形成すると、蛍光ＨＩ４を形成するＣａＳやＳｒＳ等
の蛍光体材料が誘電体層３．５中の酸素と反応して変質
し、素子の輝度が短時間で低下してしまうため寿命が短
い問題があった。The dielectric layer 3.5 of early thin film EL devices was formed of oxide. However, in this way, the dielectric layer 3.5 is made of oxide.
If HI4 is formed, the fluorescent materials such as CaS and SrS that form fluorescent HI4 react with oxygen in the dielectric layer 3.5 and change in quality, causing the brightness of the device to drop in a short period of time, resulting in a short lifespan. was there.
このような問題に対処するため、最近の薄膜ＥＬ素子の
誘電体層３，５は窒化物で形成されている（特公昭５７
−４８３１３号公報参照）。ところ７！ｉ（窒化物は比
誘電率が低いため、窒化物製の誘電体層３゜５を用いた
ＥＬ素子においては、蛍光層４に有効に電圧が加わらず
、高い駆動電圧（２００Ｖ程度）が必要になる問題があ
った。In order to deal with such problems, the dielectric layers 3 and 5 of recent thin-film EL devices are made of nitride (Japanese Patent Publication No. 57
(Refer to Publication No.-48313). Tokoro 7! i (Nitride has a low dielectric constant, so in an EL element using a dielectric layer 3°5 made of nitride, a voltage cannot be applied effectively to the fluorescent layer 4, and a high driving voltage (about 200 V) is required. There was a problem.
本発明は、上記事情に鑑みてなされたもので、低い電圧
で駆動できるうえ寿命の長い薄１ｉＥＬ素子を提供する
ことを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a thin 1iEL element that can be driven at a low voltage and has a long life.
「課題を解決するための手段」
本発明の薄膜ＥＬ素子にあっては、誘電体層を、酸化物
からなる膜と該膜をなす酸化物と同一元素の窒化物から
なる膜とを積層して形成すると共に、誘電体層の蛍光層
に接する面を窒化物からなる膜で形成することによって
上記課題の解決を図った。"Means for Solving the Problems" In the thin film EL device of the present invention, the dielectric layer is formed by laminating a film made of an oxide and a film made of a nitride of the same element as the oxide forming the film. The above problem was solved by forming the dielectric layer with a nitride film and forming the surface of the dielectric layer in contact with the fluorescent layer with a nitride film.
誘電体膜を形成する酸化物と窒化物の組み合わせとして
は、８１０ ｍ −Ｓ ｉｓＮ ４、ＡムＯｓ−Ａ Ｑ
Ｎ １ＴｉＯ＊−ＴｉＮおよび’ｆ ａ、ｏ ＠ Ｔ
ａａＮ ｓなどを例示できる。Combinations of oxide and nitride that form the dielectric film include 810 m-S isN 4, AmOs-A Q
N 1TiO*-TiN and 'f a,o @T
Examples include aaNs.
また誘電体層を形成する酸化鉤裂の膜と窒化鉤裂の膜は
、ぞれぞれ１層以上設けられる。Further, one or more layers of each of the oxidized and nitrided films and the oxidized and nitrided films forming the dielectric layer are provided.
さらに誘電体層は、蛍光層の両面に設けられても、片面
に設けられても良い。Furthermore, the dielectric layer may be provided on both sides of the fluorescent layer, or may be provided on one side.
「作用」
この薄膜ＥＬ素子では、蛍光層に接する誘電体層の面が
窒化物で形成されているので、蛍光層が誘電体層の影響
で酸化されることはない。"Operation" In this thin film EL element, the surface of the dielectric layer in contact with the phosphor layer is made of nitride, so the phosphor layer is not oxidized due to the influence of the dielectric layer.
さらにこの薄膜ＥＬ素子では、誘電体層が酸化物製膜と
窒化物製膜との２Ｎ類の膜で形成されているので、蛍光
層に有効に電圧が印加されるように比誘電率の低い窒化
物製膜の厚さを薄くすることができる。Furthermore, in this thin film EL element, the dielectric layer is formed of a 2N film made of an oxide film and a nitride film, so it has a low dielectric constant so that a voltage can be effectively applied to the fluorescent layer. The thickness of the nitride film can be reduced.
しかもこの薄膜ＥＬ素子の誘電体層は、同一元素の酸化
物と窒化物によって形成されているので、反応性スパッ
タリングを用いることにより、作動ガスの成分を酸素を
含むものと窒素を含むものに変えるだけで誘電体層全体
を形成できる。Moreover, since the dielectric layer of this thin film EL element is formed from oxide and nitride of the same element, reactive sputtering is used to change the composition of the working gas into one containing oxygen and one containing nitrogen. The entire dielectric layer can be formed with just one.
「実施例」
以下、図に示す実施例に沿って本発明の薄膜ＥＬ素子を
説明する。なお前記従来例と同一構成部分には同一符号
を付して説明を簡略化する。"Example" Hereinafter, the thin film EL device of the present invention will be explained according to the example shown in the drawings. Note that the same reference numerals are given to the same components as in the conventional example to simplify the explanation.
第１図は本発明の薄膜ＥＬ素子の一実施例を示すもので
、図中符号１３．１５は誘電体層である。FIG. 1 shows an embodiment of the thin film EL device of the present invention, and reference numerals 13 and 15 in the figure indicate dielectric layers.
これら誘電体５１３．１５は、酸化硅素（Ｓｉｆｔ）か
らなる酸化物製膜２０と窒化硅素（ＳｉｓＮ＋）からな
る窒化物製膜２１とが積層されてなるもので・ある。そ
してこれら誘電体層１３．１５の蛍光層４に接する側の
面は、窒化物製膜２１．２１で形成されている。These dielectrics 513.15 are formed by laminating an oxide film 20 made of silicon oxide (Sift) and a nitride film 21 made of silicon nitride (SisN+). The surfaces of these dielectric layers 13.15 that are in contact with the fluorescent layer 4 are formed of nitride films 21.21.
これら誘電体層１３．１５の厚さは約５００ｎａであっ
た。またこれら誘電体層１３．１５をなす酸化鉤裂［２
０と窒化物製膜２１との間の界面は酸化物と窒化物が混
合した状態となっており明瞭でないが、酸素物製膜２０
の厚さはほぼ３００ｎｓ、窒化鉤裂１５１２１の厚さは
ほぼ１１００ｎであった。The thickness of these dielectric layers 13,15 was about 500 na. In addition, oxidized cracks [2] forming these dielectric layers 13.15
The interface between 0 and the nitride film 21 is a mixture of oxide and nitride and is not clear;
The thickness of the nitride crack 15121 was approximately 300 ns, and the thickness of the nitride hook 15121 was approximately 1100 nm.
この１ＱｌｉＥＬ索子の蛍光層４は、母材としての硫化
カルシウム（ＣａＳ ）に付活剤としてのユーロピウム
（Ｅｕ）と塩素（Ｃｉ２）が添加されてなるものである
。また透明電極２はインジウム・チタン酸化物（ＩＴＯ
）によって形成されており、対向電極６はアルミニウム
によって形成されている。The fluorescent layer 4 of this 1QliEL cell is made by adding europium (Eu) and chlorine (Ci2) as activators to calcium sulfide (CaS) as a base material. The transparent electrode 2 is made of indium titanium oxide (ITO).
), and the counter electrode 6 is made of aluminum.
つぎにこの薄膜ＥＬ素子の製造方法を説明する。Next, a method for manufacturing this thin film EL element will be explained.
この薄膜ＥＬ素子を製造するには、まずガラス基板ｌに
ＩＴＯをスパッタリングして、透明電極２を形成した。To manufacture this thin film EL device, first, ITO was sputtered onto a glass substrate 1 to form a transparent electrode 2.
ついで、シリコンターゲットをカソードとし作動ガスに
酸素を２５％含むアルゴンガスを用いて反応性スパッタ
リングを行い、誘電体７１１３の酸化鉤裂ｌＡ２０を形
成した。このとき基板温度は５０℃に、スパッタ速度は
５０Ａ／ｓｉｎに設定された。このあと酸素ガスを止め
窒素ガスを供給して、窒化物製膜２１を形成した。この
窒化鉤裂Ｍ４２１を形成する際の条件は、作動ガスの窒
素織度２５％、基板温度５０℃、スパッタ速度５０Ａ／
ｓｉｎであった。このように供給するガスを酸素ガスか
ら窒素ガスに変化させると、形成される膜は、酸素物の
みからなる膜から徐々に窒化物が混合したものに変化し
最終的に窒化物からなる膜となる。Next, reactive sputtering was performed using the silicon target as a cathode and argon gas containing 25% oxygen as a working gas to form oxidized cracks IA20 of the dielectric 7113. At this time, the substrate temperature was set to 50° C. and the sputtering rate was set to 50 A/sin. Thereafter, the oxygen gas was stopped and nitrogen gas was supplied to form a nitride film 21. The conditions for forming this nitrided crack M421 are: working gas nitrogen density 25%, substrate temperature 50°C, sputtering rate 50A/
It was sin. When the supplied gas is changed from oxygen gas to nitrogen gas, the formed film gradually changes from a film consisting only of oxygen to a mixture of nitrides, and finally a film consisting of nitrides. Become.
この後、蛍光層４を電子ビーム蒸着法によって形成、つ
いで熱処理した。蒸着時の基板温度は２００℃、熱処理
温度は５００℃であった。Thereafter, a fluorescent layer 4 was formed by electron beam evaporation, and then heat treated. The substrate temperature during vapor deposition was 200°C, and the heat treatment temperature was 500°C.
つぎに、誘電体１１１３を形成した時とは逆の順序で窒
素ガスと酸素ガスを導入してスパッタリングを行い、誘
電体Ｊｌ１５を形成した。Next, sputtering was performed by introducing nitrogen gas and oxygen gas in the reverse order to that for forming the dielectric 1113, thereby forming the dielectric J115.
この後、アルミニウムを電子ビーム蒸着法で蒸着して対
向電極６を形成した。Thereafter, aluminum was deposited by electron beam evaporation to form the counter electrode 6.
このようにして作成され−た薄膜ＥＬ素子を５ｋｌ−１
、ｚで駆動したところ、赤色に発色し１００ｖで輝度が
安定した。飽和輝度は、５００ｃｄ／ｍ’であった。The thin film EL device produced in this way was 5kl-1
, z, the color developed red and the brightness stabilized at 100V. The saturated luminance was 500 cd/m'.
また絶縁破壊は自己回復型であり、影響を受けた範囲は
直径的３０μｍの領域に留どまりでおり、致命的な絶縁
破壊は生じなかった。Further, the dielectric breakdown was self-healing, and the affected area remained within a 30 μm diameter area, and no fatal dielectric breakdown occurred.
この実施例で製造した薄膜ＥＬ素子と、ｉｉ体層１３．
１５／ｌ’５ｉｏｔのみで形成されたｉｔＪ膜ＥＬ素子
（比較例りおよび誘電体層１３．１５がＳｉ＊Ｎ＊のみ
で形成された薄膜ＥＬ素子（比較例２）の、発光しきい
電圧、飽和輝度、寿命を調べた。The thin film EL device manufactured in this example and the ii body layer 13.
The light emission threshold voltage of the itJ film EL device formed only with 15/l'5iot (comparative example) and the thin film EL device (comparative example 2) in which the dielectric layer 13.15 was formed only of Si*N*, We investigated saturation brightness and lifespan.
ここで発光しきい電圧とは、Ｉｃｄ／ｓ’の輝度が得ら
れた時の電圧である。また飽和輝度とは、（発光しきい
電圧＋３０ｖ）の電圧を印加した時に得られた輝度であ
る。寿命とは、表示輝度が３０％劣化する時間である。Here, the emission threshold voltage is the voltage at which a luminance of Icd/s' is obtained. Further, the saturated luminance is the luminance obtained when a voltage of (emission threshold voltage + 30 V) is applied. Life span is the time during which display brightness deteriorates by 30%.
結果を第１表に示す。The results are shown in Table 1.
以下余白
第１表
上表の結果から、実施例のものは誘電体層１．３゜１５
が酸化物のみで形成された比較例１のものや、窒化物の
みで形成された比較例２のものに比較して、極めて長寿
命であるうえ、低電圧で駆動でき、しかも高輝度である
ことが判明した。From the results shown in Table 1 below, the dielectric layer of the example was 1.3°15
Compared to Comparative Example 1, which was formed only from oxide, and Comparative Example 2, which was formed only from nitride, it has an extremely long life, can be driven at low voltage, and has high brightness. It has been found.
この薄膜ＦＩＬ素子では、蛍光層４に接する誘電体層１
３．１５の面が窒化物製膜２１．２１で形成されている
ので、蛍光＠４に酸素が拡散することがなく誘電体５１
３，１５の影響で蛍光層４が酸化されることはない。従
ってこの薄膜ＥＬ素子は、寿命の長いものとなる。In this thin film FIL element, a dielectric layer 1 in contact with a fluorescent layer 4
Since the surface 3.15 is formed of the nitride film 21.21, oxygen does not diffuse into the fluorescence @4 and the dielectric 51
The fluorescent layer 4 will not be oxidized due to the effects of 3 and 15. Therefore, this thin film EL element has a long life.
さらにこの薄膜Ｅｌ、＄子では、誘電体層１３゜１５が
酸化鉤裂１８Ｉ２０と窒化物製膜２１との２Ｎ類の膜で
形成されているので、蛍光層４に有効に電圧が印加され
るように比誘電率の低い窒化物製膜２１の厚さを薄くす
ることができる。従ってこの薄膜ＥＬ素子は、低電圧駆
動できるものとなる。Furthermore, in this thin film El, since the dielectric layer 13.15 is formed of a 2N type film consisting of the oxide crack 18I20 and the nitride film 21, a voltage is effectively applied to the fluorescent layer 4. Thus, the thickness of the nitride film 21 having a low dielectric constant can be reduced. Therefore, this thin film EL element can be driven at a low voltage.
しかもこの薄膜ＥＬ素子の誘電体層１３．１５は、硅素
の酸化物と窒化物とによって形成されているので、Ａｒ
ガスに混合するガスを酸素から窒素あるいは窒素から酸
素に変えるだけで誘電体層１３．１５を同一装置内で形
成できる。従ってこの１ＱｉｌｉＥＬ素子は、製造設備
やコストの点でも有利なものとなる。Moreover, since the dielectric layers 13.15 of this thin film EL element are formed of silicon oxide and nitride, Ar
The dielectric layers 13 and 15 can be formed in the same apparatus by simply changing the gas to be mixed from oxygen to nitrogen or from nitrogen to oxygen. Therefore, this 1QiliEL element is advantageous in terms of manufacturing equipment and cost.
加えて、この薄膜ＥＬ素子のＳｉｎ、とＳｉ３Ｎ＋とか
らなる誘電体層１３．１５は、自己回復型絶縁破壊をす
るので、この薄膜ＢＬ素子は致命的な絶縁破壊が起こる
ことがなく、寿命の長いものとなる。In addition, the dielectric layers 13 and 15 made of Sin and Si3N+ of this thin film EL element undergo self-healing dielectric breakdown, so this thin film BL element does not suffer from catastrophic dielectric breakdown and has a long service life. It will be a long one.
なお実施例には、ＣａＳにＥｕとＣｅがドープされた蛍
光層４を有する薄１１［ＢＬ素子を示したが、本発明の
薄Ｉｌ！ＥＬ素子において、蛍光層４を形成する母材や
付活剤の種類は問われない。例えば、蛍光Ｊｍ４がＳｒ
ＳにＣｅとＣａがドープされたものであってら、ＺｎＳ
にＭｎが添加されたものであっても同様の効果が得られ
る。In the example, a thin 11 [BL element] having a fluorescent layer 4 in which CaS is doped with Eu and Ce is shown, but the thin Il! BL element of the present invention is shown. In the EL element, the type of base material and activator forming the fluorescent layer 4 does not matter. For example, fluorescence Jm4 is Sr
If S is doped with Ce and Ca, ZnS
Similar effects can be obtained even when Mn is added to the oxide.
「発明の効果」
以上説明したように本発明の薄膜ＥＬ素子は、１ｓｔｒ
１体層が、酸化物からなる膜と該膜をなす酸化物と同一
元素の窒化物からなる膜とが積層されてなるものであり
、かつ蛍光層に接する面が窒化物からなる膜で形成され
たものであるので、蛍光層には酸素が拡散せず誘電体層
の影響で蛍光層が酸化されることはない。従って本発明
の薄膜ＥＬ素子は、寿命の長いものとなる。"Effects of the Invention" As explained above, the thin film EL device of the present invention has a 1-str
One layer is formed by laminating a film made of an oxide and a film made of a nitride of the same element as the oxide forming the film, and the surface in contact with the fluorescent layer is formed of a film made of nitride. Therefore, oxygen does not diffuse into the phosphor layer and the phosphor layer is not oxidized due to the influence of the dielectric layer. Therefore, the thin film EL device of the present invention has a long life.
また本発明の薄膜ＥＬ素子では、誘電体層が酸化物製膜
と窒化物製膜との２種類の膜で形成されているので、蛍
光層に有効に電圧が加わるように比誘電率の低い窒化物
製膜の厚さを薄くすることができる。従って本発明の薄
膜ＥＬ素子は、低電圧で駆動できるものとなる。In addition, in the thin film EL device of the present invention, the dielectric layer is formed of two types of films, an oxide film and a nitride film, so that the dielectric layer has a low dielectric constant so that voltage can be effectively applied to the fluorescent layer. The thickness of the nitride film can be reduced. Therefore, the thin film EL element of the present invention can be driven at low voltage.
しかも本発明の薄膜ＥＬ素子の誘電体層は、同一元素の
酸化物と窒化物によって形成されているので、反応性ス
パッタリング時に用いる作動ガスの成分を酸素を含むも
のから窒素を含むものに、あるいはその逆に変えるだけ
で誘電体層を同一装置内で形成できる。従って本発明の
薄膜ＥＬ素子は、製造設備やコストの点でも有利なもの
となる。Moreover, since the dielectric layer of the thin film EL element of the present invention is formed of oxide and nitride of the same element, the composition of the working gas used during reactive sputtering can be changed from one containing oxygen to one containing nitrogen, or The dielectric layer can be formed in the same device by simply changing the process in reverse. Therefore, the thin film EL device of the present invention is advantageous in terms of manufacturing equipment and cost.
第１図は本発明の薄膜ＥＬ素子の一実施例を示す断面図
、第２図は従来の薄膜ＥＬ素子の一例を示す概略図であ
る。
２・・・透明電極、４・・・蛍光層、６・・・対向電極
、１３．１５・・・誘電体層、２０・・・酸化物製膜、
２１・・・窒化物製膜。FIG. 1 is a sectional view showing an embodiment of the thin film EL device of the present invention, and FIG. 2 is a schematic diagram showing an example of a conventional thin film EL device. 2... Transparent electrode, 4... Fluorescent layer, 6... Counter electrode, 13.15... Dielectric layer, 20... Oxide film formation,
21...Nitride film formation.
Claims (1)
ＥＬ素子において、 前記誘電体属が、酸化物からなる膜と該膜をなす酸化物
と同一元素の窒化物からなる膜とが積層されてなるもの
であり、かつ蛍光層に接する面が窒化物からなる膜で形
成されたものであることを特徴とする薄膜ＥＬ素子。[Scope of Claims] A thin film EL device in which an electrode layer is laminated on a fluorescent layer with a dielectric layer interposed therebetween, wherein the dielectric material is a film made of an oxide and a nitride of the same element as the oxide forming the film. What is claimed is: 1. A thin film EL device, characterized in that the thin film EL device is formed by laminating a film made of a nitride, and a surface in contact with a fluorescent layer is formed of a film made of a nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1034462A JPH02215080A (en) | 1989-02-14 | 1989-02-14 | Thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1034462A JPH02215080A (en) | 1989-02-14 | 1989-02-14 | Thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02215080A true JPH02215080A (en) | 1990-08-28 |
Family
ID=12414914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1034462A Pending JPH02215080A (en) | 1989-02-14 | 1989-02-14 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02215080A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50103982A (en) * | 1974-01-14 | 1975-08-16 | ||
| JPH01204394A (en) * | 1988-02-10 | 1989-08-16 | Hitachi Ltd | Thin film EL element |
-
1989
- 1989-02-14 JP JP1034462A patent/JPH02215080A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50103982A (en) * | 1974-01-14 | 1975-08-16 | ||
| JPH01204394A (en) * | 1988-02-10 | 1989-08-16 | Hitachi Ltd | Thin film EL element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5200277A (en) | Electroluminescent device | |
| US6793782B2 (en) | Sputter deposition process for electroluminescent phosphors | |
| US5029320A (en) | Thin film electroluminescence device with Zn concentration gradient | |
| US5612591A (en) | Electroluminescent device | |
| US7811678B2 (en) | Low process temperature thin film phosphor for electroluminescent displays | |
| JPS62295391A (en) | Electroluminescence device | |
| JPS6298597A (en) | Thin film el device | |
| JP2532506B2 (en) | Color EL display device | |
| JPH0265094A (en) | Thin film el element and manufacture thereof | |
| JPS5956390A (en) | Method of forming el thin film | |
| JPH01241793A (en) | Thin film EL element | |
| JPH02297894A (en) | Thin film EL element | |
| JPH01304694A (en) | Thin film EL element | |
| JPS6161239B2 (en) | ||
| JPH04366593A (en) | Thin film el element and manufacture thereof | |
| JPH11111450A (en) | Thin-film electroluminescence device | |
| JPH0764490A (en) | Light emitting display element | |
| JPH08153587A (en) | Thin film EL device and method of manufacturing the same | |
| JPH0467595A (en) | Formation of luminous layer for thin el element | |
| JPS6142895A (en) | Thin film el panel | |
| JPH0532877B2 (en) | ||
| JPS60182690A (en) | Method of producing el element | |
| JPS592158B2 (en) | Thin film EL element | |
| JPH0282494A (en) | Thin film electroluminescent device | |
| JPS62211895A (en) | Manufacture of electroluminescence device |