JPH0221620A - Dry etching equipment - Google Patents
Dry etching equipmentInfo
- Publication number
- JPH0221620A JPH0221620A JP63171261A JP17126188A JPH0221620A JP H0221620 A JPH0221620 A JP H0221620A JP 63171261 A JP63171261 A JP 63171261A JP 17126188 A JP17126188 A JP 17126188A JP H0221620 A JPH0221620 A JP H0221620A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- teflon
- dry etching
- insulating boss
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は平行平板型のドライエツチング装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a parallel plate type dry etching apparatus.
従来の技術
従来の平行平板型のドライエツチング装置の高周波電力
印加電極の構造を第２図（ａ）に模式的に示す。アルミ
製電極１は一部アルミナコーティング２を施しており、
シリコンウェハ４が設置されるとアルミが露出しないよ
うにしである。電極の上端部５は第２図（ｂ）に示す如
く直角でテフロン製絶縁ボスで囲まれている。2. Description of the Related Art The structure of a high frequency power applying electrode of a conventional parallel plate type dry etching apparatus is schematically shown in FIG. 2(a). The aluminum electrode 1 is partially coated with alumina coating 2,
When the silicon wafer 4 is placed, the aluminum is not exposed. The upper end 5 of the electrode is surrounded by a Teflon insulating boss at a right angle as shown in FIG. 2(b).
発明が解決しようとする課題
上記のような従来の電極構造をもつ平行平板型のドライ
エツチング装置で、高周波周波数８００Ｋ Ｈｚ 、高
周波電力４００Ｗ、エツチングガスとしてＣＨＦ３．Ｃ
２Ｆ６を使用し、圧力４５Ｐａのエツチングを行ったと
ころ、前記直角な電極上端部５に電界集中による放電が
発生する。その結果、第２図（Ｃ）に示す如く電極上端
部５゛はアルミナコーティング２がスパッタリングされ
て除去されさらに、アルミ電極１自体も端部から除々に
けずられてくる。アルミの露出により金属汚染が問題と
なる。また、周囲の絶縁ボスも異常放電によって焼かれ
ダストを発生する。Problems to be Solved by the Invention In a parallel plate type dry etching apparatus having the conventional electrode structure as described above, a high frequency frequency of 800 KHz, a high frequency power of 400 W, and CHF3. C
When etching was performed using 2F6 at a pressure of 45 Pa, a discharge occurred at the upper end 5 of the perpendicular electrode due to electric field concentration. As a result, as shown in FIG. 2(C), the alumina coating 2 is removed by sputtering from the upper end 5' of the electrode, and the aluminum electrode 1 itself is also gradually scraped away from the end. Metal contamination becomes a problem due to exposed aluminum. In addition, the surrounding insulation bosses are also burned by the abnormal discharge and generate dust.
課題を解決するための手段
本発明はかかる点に鑑み、電極上端部の曲率半径を太き
（して電界の集中を緩和し、放電による電電極端部のス
パッタリングおよびテフロン製絶縁ボス３の焼けを防ぎ
、金属汚染及びダスト発生を抑制することを目的とする
。Means for Solving the Problems In view of the above, the present invention increases the radius of curvature of the upper end of the electrode (to alleviate the concentration of the electric field and prevent the sputtering of the electrode end due to discharge and the burning of the Teflon insulating boss 3). The purpose is to prevent metal contamination and suppress dust generation.
作 用
本発明は前記した構造の電極を用いることによリ、電極
上端部での放電を防ぐことが可能である。Function The present invention makes it possible to prevent discharge at the upper end of the electrode by using the electrode having the structure described above.
放電を防止することにより、電極上端部のスパッタリン
グによるアルミ汚染及びテフロン製絶縁ボスの焼けによ
るダストの発生抑制することが可能である。従って、歩
留りの向上も可能とする。By preventing discharge, it is possible to suppress aluminum contamination due to sputtering at the upper end of the electrode and generation of dust due to burning of the Teflon insulating boss. Therefore, it is also possible to improve the yield.
実 施 例
本発明は１実施例について第１図に電極構造の模式図で
示す。第１図（ｂ）に示す如（電極上端部５に曲率を付
け、電極上面中央以外をアルミナコーティング２をほど
こす。さらに前記電極周辺をテフロン製の絶縁ボス３で
囲み電極を構成する。上記電極を高周波印加電極とする
平行平板型のドライエツチング装置を構成する。Embodiment One embodiment of the present invention is shown in FIG. 1 as a schematic diagram of an electrode structure. As shown in FIG. 1(b), the upper end 5 of the electrode is curved, and an alumina coating 2 is applied to the area other than the center of the upper surface of the electrode.Furthermore, the electrode is constructed by surrounding the periphery of the electrode with an insulating boss 3 made of Teflon. A parallel plate type dry etching apparatus is constructed in which the electrode is a high frequency application electrode.
発明の詳細
な説明したように、本発明によれば、放電の起こらない
、金属汚染、ダストの軽減された平行平板型のドライエ
ツチング装置を構成することができ、その実用効果は大
きい。As described in detail, according to the present invention, it is possible to construct a parallel plate type dry etching apparatus in which no discharge occurs, metal contamination, and dust are reduced, and its practical effects are significant.
第１図は本発明の一実施例を示す電極構造断面図、第２
図は従来技術の電極構造断面図である。
１・・・・・・Ａ１電圃、２・・・・・・Ａｌ２Ｏ３コ
ーティング、３・・・・・・テフロン絶縁ボス、４・・
・・・・シリコンウェハ。
代理人の氏名 弁理士 粟野重孝 ほか１名５′−覧鍮
上鳩３１（
第２図Fig. 1 is a sectional view of an electrode structure showing one embodiment of the present invention;
The figure is a sectional view of a conventional electrode structure. 1...A1 electric field, 2...Al2O3 coating, 3...Teflon insulation boss, 4...
...Silicon wafer. Name of agent Patent attorney Shigetaka Awano and one other person
Claims (1)
た電極よりなる平行平板型のドライエッチング装置。A parallel plate type dry etching device consisting of a disk electrode with a curvature at the upper end to which high frequency power is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63171261A JPH0221620A (en) | 1988-07-08 | 1988-07-08 | Dry etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63171261A JPH0221620A (en) | 1988-07-08 | 1988-07-08 | Dry etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0221620A true JPH0221620A (en) | 1990-01-24 |
Family
ID=15920050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63171261A Pending JPH0221620A (en) | 1988-07-08 | 1988-07-08 | Dry etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0221620A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995031822A1 (en) * | 1994-05-17 | 1995-11-23 | Hitachi, Ltd. | Device and method for plasma treatment |
-
1988
- 1988-07-08 JP JP63171261A patent/JPH0221620A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995031822A1 (en) * | 1994-05-17 | 1995-11-23 | Hitachi, Ltd. | Device and method for plasma treatment |
| US5895586A (en) * | 1994-05-17 | 1999-04-20 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum |
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