JPH0221690A - Method of partially modifying ceramic surface - Google Patents
Method of partially modifying ceramic surfaceInfo
- Publication number
- JPH0221690A JPH0221690A JP17157388A JP17157388A JPH0221690A JP H0221690 A JPH0221690 A JP H0221690A JP 17157388 A JP17157388 A JP 17157388A JP 17157388 A JP17157388 A JP 17157388A JP H0221690 A JPH0221690 A JP H0221690A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- glazed layer
- ceramic substrate
- laser light
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 23
- 239000011521 glass Substances 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract description 3
- 229910052745 lead Inorganic materials 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明はセラミックス表面の部分改質方法に関し、さら
に詳しくはセラミックス表面の部分改質処理を行いその
表面に部分導体部を得る方法に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a method for partially modifying the surface of a ceramic, and more specifically, a method for partially modifying the surface of a ceramic and forming a partial conductor portion on the surface. Regarding how to get it.
(従来の技術)
従来、集積回路等を製造するに際しては、へ1203等
のセラミックス基板上に導電性を有する金属(例えばC
u、Δg)や酸化物(Ru02等)によるペーストを印
刷、焼付または蒸着処理して、回路パターンや抵抗層を
形成することが一般的である。(Prior Art) Conventionally, when manufacturing integrated circuits and the like, a conductive metal (for example, carbon
It is common to print, bake, or vapor-deposit a paste made of u, Δg) or oxide (Ru02, etc.) to form a circuit pattern or a resistance layer.
しかしながら、上述したような従来の集積回路等の製造
方法においては、印刷、焼付または蒸着等の工程か不可
欠でおり、工程が極めて煩健でおるという問題がある。However, in the conventional manufacturing method for integrated circuits and the like as described above, steps such as printing, baking, or vapor deposition are essential, and there is a problem in that the steps are extremely cumbersome.
また、回路パターンや抵抗層の形成に際して高価な金層
材料や酸化物材料を用いるので、集積回路等の’!J造
コストか高騰するという問題もおる。In addition, since expensive gold layer materials and oxide materials are used to form circuit patterns and resistance layers, it is difficult to create integrated circuits, etc. There is also the problem of rising J-build costs.
(発明が解決しようとする課題)
上述したように従来方法においては、セラミックス基板
を用いて集積回路等を製造する工程が煩雑であると共に
、この方法により製造される製品のコストも高くなると
いう問題がある。(Problems to be Solved by the Invention) As mentioned above, in the conventional method, the process of manufacturing integrated circuits etc. using a ceramic substrate is complicated, and the cost of products manufactured by this method is also high. There is.
ぞこで本発明は、簡略な工程で、かつ、低価格な集積回
路等を製造することに奇与し得るセラミックス表面の部
分改質方法を提供することを目的とするものである。SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a method for partially modifying the surface of ceramics, which is a simple process and can contribute to the production of low-cost integrated circuits.
[発明の構成コ
(課題を解決するための手段)
本発明方法は、セラミックス基板表面にガラスグレーズ
層を形成する工程と、この工程により形成したガラスグ
レーズ層に対して所定の雰囲気中で熱エネルギー線を照
射して照射領域を導体化し部分導体部を得る工程とを有
するものでめる。[Structure of the Invention (Means for Solving the Problem) The method of the present invention includes a step of forming a glass glaze layer on the surface of a ceramic substrate, and applying thermal energy to the glass glaze layer formed by this step in a predetermined atmosphere. The process includes the step of irradiating the irradiated area with a wire to make the irradiated area a conductor to obtain a partial conductor part.
(作 用)
上記構成によれば、印刷、焼付または蒸着等の工程が不
要となり製造工程が簡略化すると共に、ガラスグレーズ
層の改質により部分導体部を得ることができるので高価
な金属や酸化物等を用いる必要がなく製造コストの低減
化を図ることができる方法を提供することができる。(Function) According to the above structure, the manufacturing process is simplified by eliminating the need for processes such as printing, baking, or vapor deposition, and the partial conductor can be obtained by modifying the glass glaze layer. It is possible to provide a method that does not require the use of materials and can reduce manufacturing costs.
〈実施例) 以下に本発明の実施例を詳細に説明する。<Example) Examples of the present invention will be described in detail below.
一般にPb、Si、B、0等の元素がアモルファス状に
配置されているガラス(以下「ガラスグレーズ」という
。)に、赤外線、レーザ光線等の熱エネルギー線を照射
すると、その照射領域において部分的な酸素の解離がお
きてPb、B等の金属化または酸素空孔の生成による導
体化現象が生じ照射領域が部分導体部となる。In general, when glass in which elements such as Pb, Si, B, and 0 are arranged in an amorphous manner (hereinafter referred to as "glass glaze") is irradiated with thermal energy rays such as infrared rays and laser beams, some parts of the irradiated area Dissociation of oxygen occurs, and a conductorization phenomenon occurs due to metallization of Pb, B, etc. or generation of oxygen vacancies, and the irradiated area becomes a partial conductor.
本実施例方法は上記現象を利用するものであり、以下に
その具体例を第1図乃至第5図をも参照して説明する。The method of this embodiment utilizes the above phenomenon, and a specific example thereof will be described below with reference to FIGS. 1 to 5.
第1図は本実施例方法により得られる回路基体1を示す
ものである。FIG. 1 shows a circuit board 1 obtained by the method of this embodiment.
この回路基体1は、例えば幅W 14 mm、奥行D=
7m、厚ざH= 2 mmのセラミックス基板2と、こ
のセラミックス基板2の表面(上面)に形成したガラス
グレーズ層3と、このガラスグレーズ層3の一部に形成
された部分導体部4とを有している。尚、第1図中、5
a、5bは部分導体部4の両端部に設けたT、n−(3
a合金製の電極部である。This circuit board 1 has, for example, a width W of 14 mm and a depth of D=
A ceramic substrate 2 with a thickness of 7 m and a thickness H = 2 mm, a glass glaze layer 3 formed on the surface (upper surface) of this ceramic substrate 2, and a partial conductor portion 4 formed on a part of this glass glaze layer 3. have. In addition, in Figure 1, 5
a, 5b are T, n-(3
This is an electrode part made of a alloy.
次に、前記回路基体1の製造工程について説明する。Next, the manufacturing process of the circuit board 1 will be explained.
まず、セラミックス基板2の製造について説明する。First, manufacturing of the ceramic substrate 2 will be explained.
T!02.△f!203.8aT !(h 。T! 02. △f! 203.8aT! (h.
SrTiO3それぞれの粉末にポリビニルアルコール(
PVA)を適槍添haし顆粒を作り、加圧成型した。そ
の後それぞれ、1450℃、 1600°C11350
°C安定時間で大気中焼成し、TlO2゜Al103
、BaTiO3,SrTiO3の焼結体単板、すなわち
、第2図に示すセラミックス基板2を得た。このセラミ
ックス基板2の外形寸法は」二連しlことおりで必る。Polyvinyl alcohol (
PVA) was appropriately added to make granules, which were then pressure molded. After that, respectively 1450℃ and 1600℃11350
Calcinate in the air for a stable time of °C, TlO2゜Al103
A sintered single plate of , BaTiO3, and SrTiO3, that is, a ceramic substrate 2 shown in FIG. 2 was obtained. The external dimensions of this ceramic substrate 2 are as follows.
次に、このセラミックス基板2の表面にpb。Next, PB is applied to the surface of this ceramic substrate 2.
S、S+系のガラスペーストを塗布し、さらに600°
Cで焼付処理して第3図に示すようなカラスグレーズ層
3を形成する。Apply S, S+ type glass paste and further 600°
A baking treatment is performed using C to form a glass glaze layer 3 as shown in FIG.
次に、カラスグレーズ@3を形成したセラミックス基板
2を大気中に保持し、第4図に示すように然エネルギー
線を照射してカラスグレーズ層3の部分改質処理を行う
。あるいは、前記ガラスグレーズ層3を形成したセラミ
ックス基板2を所定の雰囲気中に保持し、この部分改質
処理を行う。Next, the ceramic substrate 2 on which the crow glaze@3 has been formed is held in the atmosphere, and as shown in FIG. 4, the crow glaze layer 3 is partially modified by irradiation with natural energy rays. Alternatively, the ceramic substrate 2 on which the glass glaze layer 3 is formed is held in a predetermined atmosphere and this partial modification treatment is performed.
そのための装置を第5図に示す。A device for this purpose is shown in FIG.
この装置は、熱エネルギー線としてのYAGレーザ光ま
たは赤外線レーザ光を放射するレーザヘッド11と、レ
ーザ光が透過し得る窓を設けた真空チャンバ12とを具
備している。そして、この真空チャンバ12内をロータ
リポンプと油拡散ポンプとにより所望の酸素分圧となる
まで吸引した後、排気系13を切離し、ざらに、およそ
大気圧より若干高い圧力の1.1気圧程度の圧力となる
ようにN2ガスを導入する。This device includes a laser head 11 that emits YAG laser light or infrared laser light as a thermal energy beam, and a vacuum chamber 12 provided with a window through which the laser light can pass. After suctioning the inside of this vacuum chamber 12 until the desired oxygen partial pressure is reached by a rotary pump and an oil diffusion pump, the exhaust system 13 is disconnected and the pressure is approximately 1.1 atm, which is slightly higher than atmospheric pressure. N2 gas is introduced so that the pressure becomes .
この後、真空チャンバ12内の雰囲気を汚さないように
N2ガスをフローさせながら、真空チャンバ12内の酸
素分圧が所望の値を維持するようにN2ボンベからの流
量と排気バルブからの流出流量とを調整しながら、レー
ザヘッド11からガラスグレーズ層3にレーザ光を照射
して第1図に示す部分導体部4を有する回路基体1を得
た。After this, while flowing N2 gas so as not to pollute the atmosphere inside the vacuum chamber 12, the flow rate from the N2 cylinder and the flow rate from the exhaust valve are adjusted so that the oxygen partial pressure inside the vacuum chamber 12 maintains the desired value. While adjusting the above, the glass glaze layer 3 was irradiated with laser light from the laser head 11 to obtain the circuit board 1 having the partial conductor portion 4 shown in FIG. 1.
そして、部分導体部4の両端にIn−(3a合金製の電
極部5a、5bを設けて部分導体部4の抵抗値を四端子
法抵抗計で測定し第1表に示す結果を(qた。Then, electrode parts 5a and 5b made of In-(3a alloy) were provided at both ends of the partial conductor part 4, and the resistance value of the partial conductor part 4 was measured using a four-terminal method resistance meter.The results are shown in Table 1. .
第1表
尚、YAGレーザは、−筆書き方式、パルス励起型、Q
スイッチ周波数3KH7の条件のものを使用した。Table 1 In addition, the YAG laser is - brush writing type, pulse excitation type, Q
A switch with a switch frequency of 3KH7 was used.
第1表から明らかなように、レーザ光の種類。As is clear from Table 1, the types of laser beams.
パワー及び走査速度の調整と雰囲気の調整とにより部分
導体部4の抵抗値を種々の値に設定でき、回路基体]の
部分導体部4を抵抗体または回路パターン用の導体とし
て使用することが可能となる。By adjusting the power and scanning speed and adjusting the atmosphere, the resistance value of the partial conductor section 4 can be set to various values, and the partial conductor section 4 of the circuit board can be used as a resistor or a conductor for a circuit pattern. becomes.
雰囲気としては、大気、N2のみならず、Ar。The atmosphere includes not only air and N2, but also Ar.
H2又はこれらの混合気体でも、抵抗体又は導体を形成
できることが確認できている。It has been confirmed that a resistor or conductor can also be formed using H2 or a mixture thereof.
また、上;ホした製造工程によれば、印刷、焼付または
蒸着等の工程を必要としないので従来方法に比ベニ程の
簡略化を図れる。更に、ガラスグレーズ図3の改質処理
により部分導体部4を形成するもので必るから、金属や
酸化物材料が不要となり、これにより、製品の製造コス
トの低減化を図れる。Furthermore, the manufacturing process described above does not require processes such as printing, baking, or vapor deposition, so it can be much simpler than conventional methods. Furthermore, since the partial conductor portion 4 is necessarily formed by the glass glaze modification process shown in FIG. 3, metals and oxide materials are not required, thereby reducing the manufacturing cost of the product.
第2表は上述した回路基体1のガラスグレーズ層3を形
成する際に、pb、B、S r系ガラスペーストにさら
に”、i02粉末を20wt%分散されたものをセラミ
ックス基板2に塗布し600 ’Cて焼結した場合にお
ける実験結果を示すもので必る。Table 2 shows that when forming the glass glaze layer 3 of the circuit board 1 described above, a PB, B, Sr based glass paste with 20 wt% of i02 powder dispersed therein was applied to the ceramic substrate 2 and It is necessary to show the experimental results when sintered with carbon.
(以下余白)
第2表
第2表から明らかなようにガラスグレーズ層3にT !
02を混入させたものを用いることにより、より幅広
い抵抗値をもった部分導体部4を得ることができる。(Margins below) Table 2 As is clear from Table 2, T!
By using a material mixed with 02, it is possible to obtain a partial conductor portion 4 having a wider range of resistance values.
第6図は本実施例方法の応用例を示すものでおり、前記
ビラミックス基板2よりも形状の大きいセラミックス基
板2Aの表面に前記ガラスグレーズ層3と同($な材質
からなるガラスグレーズ層3Aを形成し、このガラスグ
レーズ層3Aに対し上述した場合と同様な条件の下にレ
ーザ光を照射して連続したクランク状の部分導体部5を
得るようにしたものである。この場合に、レーザ光の照
射条件を調整して部分導体部5の線幅や長さを種々変更
することにより、種々の抵抗値を有する部分導体部5を
得ることができ、応用範囲の広い回路基体1△を製造す
ることができる。FIG. 6 shows an application example of the method of this embodiment, in which a glass glaze layer 3A made of the same material as the glass glaze layer 3 is placed on the surface of a ceramic substrate 2A having a larger shape than the Viramix substrate 2. is formed, and a continuous crank-shaped partial conductor portion 5 is obtained by irradiating the glass glaze layer 3A with a laser beam under the same conditions as described above. By adjusting the light irradiation conditions and changing the line width and length of the partial conductor portion 5, partial conductor portions 5 having various resistance values can be obtained, and the circuit board 1△ with a wide range of applications can be obtained. can be manufactured.
本発明は上述した実施例に限定されるものではなく、そ
の要旨の範囲内で種々の変形が可能である。例えば、熱
エネルギー線であればよいのて、レーザ光もY A G
、 C02に限定されるものではない。また、赤外線
光でも実施できる。The present invention is not limited to the embodiments described above, and various modifications can be made within the scope of the invention. For example, not only thermal energy rays but also laser beams can be used.
, C02. It can also be carried out using infrared light.
[発明の効果]
以上群)ホした本発明によれば、セラミックス基板に対
するガラスグレーズ層の形成工程と、所定の雰囲気中に
おけるレーザ光の照射工程とにより部分導体部を得るこ
とができるので、製造工程か簡略化し、且つ、低価格な
集積回路等を製造することに奇与し得るセラミックス表
面の部分改質方法を提供することができる。[Effects of the Invention] According to the above-mentioned group (e), the partial conductor portion can be obtained through the step of forming a glass glaze layer on the ceramic substrate and the step of irradiating laser light in a predetermined atmosphere, so that the manufacturing process is simplified. It is possible to provide a method for partially modifying the surface of ceramics that simplifies the process and can contribute to the production of low-cost integrated circuits and the like.
第1図は本発明の実施例により得られる回路基体の一例
を示す斜視図、第2図乃至第4図はそれぞれ実施例方法
の製造工程を示す斜視図、第5図は部分改質処理を行う
装置の一例を示す説明図、第6図は実施例方法の応用例
を示す斜視図でおる。
2・・・セラミックス基板、
3・・・カラスグレーズ層、
4・・・部分導体部。FIG. 1 is a perspective view showing an example of a circuit board obtained by an example of the present invention, FIGS. 2 to 4 are perspective views showing the manufacturing process of the example method, and FIG. FIG. 6 is a perspective view showing an example of application of the method of the embodiment. 2... Ceramic substrate, 3... Glass glaze layer, 4... Partial conductor section.
Claims (2)
成する工程と、この工程により形成したガラスグレーズ
層に対して所定の雰囲気中で熱エネルギー線を照射して
照射領域を導体化した部分導体部を得る工程とを有する
ことを特徴とするセラミックス表面の部分改質方法。(1) A step of forming a glass glaze layer on the surface of a ceramic substrate, and irradiating the glass glaze layer formed by this step with thermal energy rays in a predetermined atmosphere to obtain a partial conductor portion in which the irradiated area is made conductive. A method for partially modifying a ceramic surface, comprising the steps of:
真空又は大気の中から選ばれる又はこれらの任意の組合
せの中から選ばれる雰囲気である請求項1記載のセラミ
ックス表面の部分改質方法。(2) The predetermined atmosphere is Ar, N_2, H_2,
2. The method for partially modifying a ceramic surface according to claim 1, wherein the atmosphere is selected from vacuum or air, or any combination thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17157388A JPH0221690A (en) | 1988-07-08 | 1988-07-08 | Method of partially modifying ceramic surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17157388A JPH0221690A (en) | 1988-07-08 | 1988-07-08 | Method of partially modifying ceramic surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0221690A true JPH0221690A (en) | 1990-01-24 |
Family
ID=15925654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17157388A Pending JPH0221690A (en) | 1988-07-08 | 1988-07-08 | Method of partially modifying ceramic surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0221690A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2684986A1 (en) * | 1991-12-12 | 1993-06-18 | Man Technologie Gmbh | Coating for protecting structural components containing carbon against oxidation at high temperature |
-
1988
- 1988-07-08 JP JP17157388A patent/JPH0221690A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2684986A1 (en) * | 1991-12-12 | 1993-06-18 | Man Technologie Gmbh | Coating for protecting structural components containing carbon against oxidation at high temperature |
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