JPH0221697B2 - - Google Patents
Info
- Publication number
- JPH0221697B2 JPH0221697B2 JP56086199A JP8619981A JPH0221697B2 JP H0221697 B2 JPH0221697 B2 JP H0221697B2 JP 56086199 A JP56086199 A JP 56086199A JP 8619981 A JP8619981 A JP 8619981A JP H0221697 B2 JPH0221697 B2 JP H0221697B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- transistor
- injector
- injector current
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
Landscapes
- Engineering & Computer Science (AREA)
- Logic Circuits (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
Description
【発明の詳細な説明】
本発明はI2L（Interated Injecfion Logic）素子
のインジエクタ電流供給回路に関するもので、温
度依存性の少ない電流を供給できる回路を提供す
ることを目的としている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an injector current supply circuit for an I 2 L (Interated Injecfion Logic) element, and an object of the present invention is to provide a circuit that can supply a current with little temperature dependence.
従来のI2L回路へのインジエクタ電流の供給は、
第１図に示すようにインバータ用NPNトランジ
スタQ2i−1，インジエクタ電流供給用PNPトラ
ンジスタQ2i（ｉ＝１，２…，ｎ）をそれぞれ対と
するI2L素子ｎ個に定電圧源Vsから抵抗Ｒを通し
てインジエクタ電流供給用PNPトランジスタQ2i
（ｉ＝１，２，…，ｎ）の各エミツタに共通にイ
ンジエクタ電流を供給する構成をもつている。入
力信号はインバータ用NPNトランジスタQ2i-1
（ｉ＝１，２，…ｎ）のそれぞれのベースに加え
られ、出力信号はインバータ用NPNトランジス
タQ2i-1（ｉ＝１，２，…，ｎ）の各コレクタから
取り出されることはいうまでもない。 Supplying injector current to a conventional I 2 L circuit is
As shown in Figure 1, a constant voltage source is applied to n I 2 L elements each pairing an inverter NPN transistor Q 2 i− 1 and an injector current supply PNP transistor Q 2 i (i=1, 2..., n). PNP transistor Q 2i for injector current supply from Vs through resistor R
It has a configuration in which an injector current is commonly supplied to each emitter (i=1, 2, . . . , n). Input signal is NPN transistor Q 2i-1 for inverter
(i = 1, 2, ... n), and the output signal is taken out from each collector of the inverter NPN transistor Q 2i-1 (i = 1, 2, ..., n). Nor.
I2L素子のインジエクタ電流供給用PNPトラン
ジスタQ2i（ｉ＝１，２，…，ｎ）のエミツタ電流
Ｉの総和、即ちｎ個のI2L素子供給するインジエ
クタ電流ISUMは
ISUM＝VS−VBE／Ｒ ……(1)
ここで、VBEはインジエクタ電流供給用PNPト
ランジスタQ′2i（ｉ＝１，２，…，ｎ）のベース
−エミツタ間電圧である。 The sum of the emitter currents I of the PNP transistors Q 2i (i = 1, 2, ..., n) for supplying injector current of I 2 L elements, that is, the injector current I SUM that supplies n I 2 L elements, is I SUM = V S −V BE /R (1) Here, V BE is the base-emitter voltage of the injector current supply PNP transistor Q' 2i (i=1, 2, . . . , n).
(1)式に示すVBE約−2mV／℃という温度依存性
があるため、定電圧源VSの電圧がVBEとあまりち
がわない値の場合にしか設定できない。このよう
な低電圧駆動回路では、ΣIはVBEの温度依存性を
大きく受ける。また、(1)式よりI2L素子を集積化
した固体回路ではチツプ面積を小さくするため、
抵抗Ｒの抵抗値はできるだけ低いほうが望ましい
ので、定電圧源VSの電圧値は小さいほうが望ま
しい。 Since V BE has a temperature dependence of approximately -2 mV/°C as shown in equation (1), it can only be set when the voltage of constant voltage source V S is not much different from V BE . In such a low voltage drive circuit, ΣI is greatly affected by the temperature dependence of VBE . Also, from equation (1), in order to reduce the chip area in a solid-state circuit that integrates I 2 L elements,
Since it is desirable that the resistance value of the resistor R be as low as possible, it is desirable that the voltage value of the constant voltage source V S be small.
本発明の目的はI2L素子へのインジエクタ電流
として温度変化があつてもI2L素子の特性に影響
しない電流を供給することができ、かつI2L素子
部が必要とする駆動電流を小さな基準電流を用い
て発生することができる。インジエクタ電流供給
回路を得ることにある。 The purpose of the present invention is to be able to supply an injector current to an I 2 L element that does not affect the characteristics of the I 2 L element even if there is a temperature change, and to reduce the drive current required by the I 2 L element. It can be generated using a small reference current. The purpose is to obtain an injector current supply circuit.
本発明によるインジエクタ電流供給回路は、定
電流源の出力に第１の抵抗の一端を接続し、ベー
スおよびコレクタが基準点に接続されたトランジ
スタであつてI2L素子におけるインジエクタ電流
供給用トランジスタと同一導電型のトランジスタ
のエミツタを前記第１の抵抗の他端に接続し、前
記抵抗の前記一端をボルテージホロア回路の入力
に接続し、前記ボルテージホロアの出力を第２の
抵抗を介して、インジエクタ電流供給用トランジ
スタとインバータ用トランジスタで構成される
I2L素子の前記インジエクタ電流供給用トランジ
スタに供給したことを特徴とする。 The injector current supply circuit according to the present invention is a transistor in which one end of a first resistor is connected to the output of a constant current source, and whose base and collector are connected to a reference point, and which is a transistor for injector current supply in an I 2 L element. The emitters of transistors of the same conductivity type are connected to the other end of the first resistor, the one end of the resistor is connected to the input of a voltage follower circuit, and the output of the voltage follower is connected through the second resistor. , consists of an injector current supply transistor and an inverter transistor.
The current is supplied to the injector current supply transistor of the I 2 L element.
次に、図面を参照して本発明をより詳細に説明
する。 Next, the present invention will be explained in more detail with reference to the drawings.
第２図は本発明の一実施例を示したもので、第
１図の定電圧源VSのかわりに定電流源ISとインジ
エクタ電流設定用抵抗ＲとラテラルPNP構造の
コレクターベース接続トランジスタQoとボルテ
ージホロア構成演算増幅器OPにおきかえた構成
となつている。ここで、インジエクタ電流を供給
されるI2L素子構成は第１図の場合と同じである。 Fig. 2 shows an embodiment of the present invention, in which instead of the constant voltage source V S of Fig. 1, a constant current source I S , an injector current setting resistor R, and a collector base connection transistor Qo of a lateral PNP structure are used. The configuration has been replaced with a voltage follower configuration operational amplifier OP. Here, the configuration of the I 2 L element to which the injector current is supplied is the same as in the case of FIG.
第２図からわかるように、ｎ個のI2L素子に供
給するインジエクタ電流I′SUMは
I′SUM＝IsRs＋（VBEO−VBE／Ｒ
＝IS・RS／Ｒ＋VBEO−VBE／Ｒ ……(2)
となる。これより、(2)式の第２項はコレクターベ
ース接続トランジスタQoのVBE温度係数とインジ
エクタ電流供給用PNPトランジスタQ2i（ｉ＝１，
２，…，ｎ）のVBE温度係数が相殺するので、
I2L素子の電気的特性にほとんど温度係数をもた
ないインジエクタ電流供給回路が得られる。ま
た、定電流源ISを各I2L素子のインジエクタ電流
Ｉに等しくしておけば、(2)式の第２項は消えて
I′SUM＝IS・RS／Ｒ＝Ｉ・RS／Ｒ ……(3)
となり、RS／ＲはＲに接続されるI2L素子のインジ
エクタ数に等しくなる。 As can be seen from Fig. 2, the injector current I' SUM supplied to n I 2 L elements is I' SUM = I s R s + (V BEO −V BE /R = I S・R S /R + V BEO −V BE /R ...(2) From this, the second term of equation (2) is the V BE temperature coefficient of the collector-base connected transistor Qo and the PNP transistor Q 2i (i=1,
Since the V BE temperature coefficients of 2,...,n) cancel each other out,
An injector current supply circuit can be obtained in which the electrical characteristics of the I 2 L element have almost no temperature coefficient. Also, if the constant current source I S is made equal to the injector current I of each I 2 L element, the second term in equation (2) disappears, and I' SUM = I S · R S /R = I · R S /R (3), and R S /R is equal to the number of injectors of the I 2 L element connected to R.
従つて、インジエクタ段がｎ個あれば、インジ
エクタ電流設定用抵抗RSはインジエクタ電流供
給用抵抗Ｒと等しい抵抗をｎ個分並列にならべれ
ば良く、設計が極めて簡単になる。また、(3)式よ
り、I′SUMは、定電流源ISと抵抗比で決まるので、
集積化固回路にした場合、I′SUMのバラツキは極め
て小さくすることができる。 Therefore, if there are n injector stages, the injector current setting resistor R S can be made by arranging n resistors equal to the injector current supplying resistor R in parallel, and the design becomes extremely simple. Also, from equation (3), I′ SUM is determined by the constant current source I S and the resistance ratio, so
When an integrated solid circuit is used, the variation in I′ SUM can be made extremely small.
第１図は、従来の回路を示す回路図である。第
２図は本発明の一実施例を示す回路図である。
VS……定電圧源、Ｒ……インジエクタ電流供
給抵抗、Q1，Q2，Q3，Q4…，Q2i-1，Q2i，…
Q2o-1，Q2o……I2L素子、IS……定電流源、RS…
…インジエクタ電流設定抵抗、Qo……PNPトラ
ンジスタ、OP……演算増幅器。
FIG. 1 is a circuit diagram showing a conventional circuit. FIG. 2 is a circuit diagram showing one embodiment of the present invention. V S ... Constant voltage source, R ... Injector current supply resistance, Q 1 , Q 2 , Q 3 , Q 4 ..., Q 2i-1 , Q 2i , ...
Q 2o-1 , Q 2o ...I 2 L element, I S ...constant current source, R S ...
...Injector current setting resistor, Qo...PNP transistor, OP...operational amplifier.
Claims (1)
し、ベースおよびコレクタが基準点に接続された
トランジスタであつてI2L素子におけるインジエ
クタ電流供給用トランジスタと同一導電型のトラ
ンジスタのエミツタを前記第１の抵抗の他端に接
続し、前記抵抗の前記一端をボルテージホロア回
路の入力に接続し、前記ボルテージホロアの出力
を第２の抵抗を介して、インジエクタ電流供給用
トランジスタとインバータ用トランジスタで構成
されるI2L素子の前記インジエクタ電流供給用ト
ランジスタに供給したことを特徴とする論理回
路。1 Connect one end of the first resistor to the output of the constant current source, and connect the emitter of a transistor whose base and collector are connected to the reference point and whose conductivity type is the same as that of the injector current supply transistor in the I 2 L element. The first end of the resistor is connected to the other end of the first resistor, the one end of the resistor is connected to the input of a voltage follower circuit, and the output of the voltage follower is connected to the injector current supply transistor and the inverter through the second resistor. A logic circuit characterized in that the injector current is supplied to the injector current supplying transistor of an I 2 L element constituted by a transistor for supplying current to the injector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56086199A JPS57201336A (en) | 1981-06-04 | 1981-06-04 | Logical circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56086199A JPS57201336A (en) | 1981-06-04 | 1981-06-04 | Logical circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57201336A JPS57201336A (en) | 1982-12-09 |
| JPH0221697B2 true JPH0221697B2 (en) | 1990-05-15 |
Family
ID=13880105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56086199A Granted JPS57201336A (en) | 1981-06-04 | 1981-06-04 | Logical circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201336A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045533U (en) * | 1983-09-02 | 1985-03-30 | 三洋電機株式会社 | Temperature compensation circuit for I↑2L element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5264830A (en) * | 1975-11-25 | 1977-05-28 | Hitachi Ltd | Power source supply system of integrated injection logical circuit |
-
1981
- 1981-06-04 JP JP56086199A patent/JPS57201336A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57201336A (en) | 1982-12-09 |
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