JPH02217465A - Plasma beam generator - Google Patents
Plasma beam generatorInfo
- Publication number
- JPH02217465A JPH02217465A JP3734689A JP3734689A JPH02217465A JP H02217465 A JPH02217465 A JP H02217465A JP 3734689 A JP3734689 A JP 3734689A JP 3734689 A JP3734689 A JP 3734689A JP H02217465 A JPH02217465 A JP H02217465A
- Authority
- JP
- Japan
- Prior art keywords
- hollow cathode
- plasma
- plasma beam
- plasma beams
- width direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 abstract description 20
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 229910025794 LaB6 Inorganic materials 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 10
- 238000002844 melting Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- -1 zinc Chemical class 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明はドライブレーティング処理に用いるプラズマ
ビーム発生装置、とくに広幅板などへの被膜形成に有利
に適合する、へん平なプラズマビームを発生する装置に
関する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a plasma beam generation device used in dry rating processing, and in particular a device that generates a flat plasma beam that is advantageously suited for forming a film on a wide board. Regarding.
(従来の技術)
近年、各種素材の表面に別の物質になる薄膜を形成する
ことによって素材の緒特性を向上する処理が、ドライブ
レーティングの手法によって盛んに行われている。例え
ば鋼板(鋼帯)への亜鉛蒸着による耐食性の向上や、ド
リル刃またはバイトなどの切削工具へのT1Ni着によ
る耐摩耗性の向上が挙げられる。(Prior Art) In recent years, a process of improving the mechanical properties of various materials by forming a thin film of a different substance on the surface of the material has been actively carried out using the dry brating method. For example, corrosion resistance can be improved by depositing zinc on a steel plate (steel strip), and wear resistance can be improved by depositing T1Ni on a cutting tool such as a drill blade or a cutting tool.
ドライブレーティング処理は被膜の形成物質を蒸発させ
ることが必須で、具体的には高融点金属塊を加工してく
ぼみをつくり、このくぼみに被膜の形成物質(蒸発源)
を収容し、高融点金属塊に直接通電して蒸発源を加熱、
蒸発させる方法および、蒸発源をるつぼに収容し、るつ
ぼに抵抗加熱などを施して蒸発源を加熱、蒸発させる方
法等があるが、Tiなどの高融点金属を蒸発させること
が困難で汎用性に劣る。なおスッパタリング法を用いれ
ば高融点金属を蒸発さセることかできるが、成膜速度が
遅いという欠点を克服することができない。したがって
蒸発源の加熱、蒸発には、電流量の大きい、すなわら出
力の大きなプラズマビームまたは電子ビームを蒸発源に
直接照射することが有利である。In the dry brating process, it is essential to evaporate the film-forming substance. Specifically, a high-melting point metal lump is processed to create a depression, and the film-forming substance (evaporation source) is placed in this depression.
The evaporation source is heated by directly applying electricity to the high melting point metal mass,
There are two methods: evaporating the evaporation source, and placing the evaporation source in a crucible and applying resistance heating to the crucible to heat and evaporate the evaporation source, but it is difficult to evaporate high melting point metals such as Ti, making this method less versatile. Inferior. Although it is possible to evaporate the high melting point metal by using the sputtering method, it cannot overcome the drawback that the film formation rate is slow. Therefore, in order to heat and evaporate the evaporation source, it is advantageous to directly irradiate the evaporation source with a plasma beam or an electron beam with a large amount of current, that is, a large output.
一方鋼帯などの長尺物に対してドライブレーティング処
理を連続的に施す技術が開発され、この場合は長尺物の
幅が1mをこえることもあり、従来のるつぼからの蒸発
では被膜の幅方向における厚みが不均一になって膜質や
形状の不良をまねき、得られる製品の特性が劣化する。On the other hand, a technology has been developed to continuously apply dry rating treatment to long objects such as steel strips. The thickness in the direction becomes non-uniform, leading to defects in film quality and shape, and the properties of the resulting product deteriorate.
この問題を解決する方法として、長尺物をロールに巻き
つけ溶融位置からの蒸気をダクトによって導き、長尺物
の幅方向へ均一に成膜することが、鉄と鋼、 vol、
72(1986)、P、1070に記載されている。A method to solve this problem is to wrap a long object around a roll and guide the steam from the melting point through a duct to form a film uniformly in the width direction of the long object, as reported in Tetsu to Hagane, vol.
72 (1986), P. 1070.
この方法は亜鉛のような低融点金属を蒸発する場合は適
しているが、Tiのような高融点金属を蒸発する場合に
は不利である。This method is suitable for evaporating low melting point metals such as zinc, but is disadvantageous when evaporating high melting point metals such as Ti.
(発明が解決しようとする課題)
そこでこの発明は、幅の広い大面積の基板上にとくに高
融点金属の被膜を均一に形成する際に有利に適合する、
へん平なプラズマビームの発生装置にういて提案するこ
とを目的とする。(Problems to be Solved by the Invention) Therefore, the present invention is advantageously suited for uniformly forming a film of a high-melting point metal on a wide, large-area substrate.
The purpose is to propose a flat plasma beam generator.
(課題を解決するための手段)
この発明は、ホローカソードガンとこのホローカソード
ガンから照射されるプラズマビームの幅を拡大してへん
平化する磁場発生器とをそなえ、ボローカソードガンの
中空陰極は内側に中実の柱状体を同心配置してなること
を特徴とするプラズマビーム発生装置である。(Means for Solving the Problems) The present invention includes a hollow cathode gun and a magnetic field generator that expands the width and flattens the plasma beam irradiated from the hollow cathode gun. is a plasma beam generating device characterized by having solid columnar bodies arranged concentrically inside.
また実施に当たり、中空陰極はTa、、、W、およびL
aBhのうちから選ばれる1種以上からなることが有利
に適合する。In addition, in implementation, the hollow cathodes are Ta, ..., W, and L.
It is advantageously suitable to consist of one or more types selected from aBh.
ところで電子銃にて発生させた電子ビームを磁場制御に
より線状に走査することは可能でかつ、一般に高電圧、
低電流の特徴から蒸発量は大きくできるが、蒸発粒子と
電子との衝突確率が低くなって蒸発粒子のイオン化が不
十分となる。これは亜鉛を蒸発源とする場合はとくに問
題とはならないが、蒸発させたTiをNZと反応させて
TiNを形成するような反応を伴なう場合は、イオン化
率が低いと反応性も低下し被膜欠陥が発生し易くなる。By the way, it is possible to linearly scan the electron beam generated by an electron gun by controlling the magnetic field, and it is generally possible to scan the electron beam generated by an electron gun in a linear manner.
Although the amount of evaporation can be increased due to the low current characteristics, the probability of collision between evaporated particles and electrons becomes low, resulting in insufficient ionization of evaporated particles. This is not a particular problem when zinc is used as the evaporation source, but when evaporated Ti is reacted with NZ to form TiN, the reactivity decreases if the ionization rate is low. However, coating defects are more likely to occur.
したがって蒸発に供する熱源としては電流量の大きいビ
ーム、すなわちホローカソード方式のプラズマビームを
用いることが好ましい。Therefore, it is preferable to use a beam with a large amount of current, that is, a hollow cathode plasma beam, as the heat source for evaporation.
さてこの発明に従うプラズマビーム発生装置は、ホロー
カソードガンの中空陰極の内側に中実の柱状体を同心配
置したもので、例えば第1図(a)〜(c)に示す構造
の中空陰極が有利に適合する。同図(a)〜(c)の中
空陰極lはそれぞれ断面が円、だ円および矩形の筒IA
の内側に同様の断面の柱状体IBを同心配置したもので
、いずれもプラズマ発生部の断面形状を環状にしたこと
を特徴とする。Now, the plasma beam generator according to the present invention has a solid columnar body concentrically arranged inside the hollow cathode of a hollow cathode gun. For example, a hollow cathode having the structure shown in FIGS. 1(a) to (c) is advantageous. Compatible with The hollow cathodes l in the same figure (a) to (c) are cylinders IA whose cross sections are circular, oval, and rectangular, respectively.
A columnar body IB having a similar cross section is arranged concentrically inside the plasma generating part, and both are characterized in that the cross-sectional shape of the plasma generating part is annular.
また磁場発生装置は、平板状の磁石を水平に、一定の間
隔を開け、同一極を対向させて配置するなど石n力線を
水平に形成させるような装置を使用することができる。Further, as the magnetic field generating device, a device that forms the magnetic lines of force horizontally can be used, such as by arranging flat plate magnets horizontally at regular intervals with the same poles facing each other.
両磁石の中間にビームを通過させることでビームをへん
平化することができる。By passing the beam between the two magnets, the beam can be flattened.
(作 用)
従来のホローカソードガンの筒状中空陰極にて発生させ
たプラズマビームの端面ば第2図(a)に示すように円
形で、このビームを磁場発生器でへん平化すると、同図
(b)に示すようにビームの端面は円形から長だ円形に
変化する。端面形状、すなわちビーム照射痕が長だ円の
プラズマビームは、プラズマ密度が中央部に比べ両端部
で低く、そのプラズマ密度分布はうようど凸レンズ状に
なる。(Function) The end face of the plasma beam generated by the cylindrical hollow cathode of a conventional hollow cathode gun is circular as shown in Fig. 2 (a), and when this beam is flattened by a magnetic field generator, it becomes the same. As shown in Figure (b), the end face of the beam changes from circular to oval. A plasma beam whose end face shape, that is, the beam irradiation trace is an elongated oval, has a plasma density lower at both ends than at the center, and the plasma density distribution is shaped like a convex lens.
したがってこのプラズマビームを蒸発源に照射する七、
蒸発量は中央部に比べ両端部で少なく、製品の膜厚は不
均一になる。Therefore, the evaporation source is irradiated with this plasma beam.
The amount of evaporation is smaller at both ends than in the center, resulting in uneven product film thickness.
これに対してこの発明に従うホローカソードガンにて発
生させたプラズマビームの端面ば第3図(a)に示すよ
うに環状で中心部のプラズマ密度は低く、したがってこ
のビームを磁場発生器でへん平化すると、同図(b)に
示すようにビームの端面ば長方形状となりそのプラズマ
密度分布を均一にすることができる。On the other hand, the end face of the plasma beam generated by the hollow cathode gun according to the present invention has an annular shape as shown in FIG. When this happens, the end face of the beam becomes rectangular, as shown in FIG. 5(b), and the plasma density distribution can be made uniform.
(実施例)
第4図にこの発明に従うプラズマビーム発生装置の好適
例を示す。(Example) FIG. 4 shows a preferred example of a plasma beam generator according to the present invention.
図中1はホローカソードガンの中空陰極で、円筒IAと
円柱IBとからなり、2はこの中空陰極1にて発生させ
たプラズマビーム、3は磁場発生器で、所定の間隙を隔
て対向配置とした磁石3Aおよび3Bからなり、4は磁
場発生器3にてへん平化されたプラズマビーム、5はる
つぼ、そして6は蒸発源である。In the figure, 1 is a hollow cathode of a hollow cathode gun, which is composed of a cylinder IA and a cylinder IB, 2 is a plasma beam generated by this hollow cathode 1, and 3 is a magnetic field generator, which are arranged facing each other with a predetermined gap. 4 is a plasma beam flattened by a magnetic field generator 3, 5 is a crucible, and 6 is an evaporation source.
中空陰極1で発生させたプラズマビーム2は、図示のよ
うに磁場発生器3にて発生させた磁場を通過させること
によってへん平化されて板状のプラズマビーム4となり
、次いでこのプラズマビーム4を基板の幅方向に延びる
るつぼ5に照射してビーム形状と相似の蒸発流を形成さ
せれば、基板の幅方向に均一な厚さの被膜を蒸着できる
。A plasma beam 2 generated by a hollow cathode 1 is flattened into a plate-shaped plasma beam 4 by passing a magnetic field generated by a magnetic field generator 3 as shown in the figure, and then this plasma beam 4 is By irradiating the crucible 5 extending in the width direction of the substrate to form an evaporation flow similar to the beam shape, a film having a uniform thickness can be deposited in the width direction of the substrate.
次に同図に示したプラズマビーム発生装置を用いて、板
幅500 mm、板厚0.3mmのステンレス鋼帯の基
板上に、下記の条件にてTiNの被膜を中央の厚さ0.
5μm目標で形成し、得られた製品の板幅方向のTiN
膜厚分布を調べた。また比較として、中空陰極を従来の
円筒状としたプラズマビーム発生装置を用いて、同様の
条件での処理も行った。Next, using the plasma beam generator shown in the figure, a TiN film was deposited on a stainless steel strip substrate with a width of 500 mm and a thickness of 0.3 mm under the following conditions to a thickness of 0.0 mm in the center.
TiN in the width direction of the resulting product was formed with a target of 5 μm.
The film thickness distribution was investigated. For comparison, processing was also carried out under similar conditions using a conventional plasma beam generator with a cylindrical hollow cathode.
それぞれの調査結果を、第1表に示す。The results of each survey are shown in Table 1.
第 1 表
第1表において、銅帯通板速度3m/min、ビーム電
流量は1000 A 、へん平後のビーム幅は300
mmである。Table 1 In Table 1, the copper strip passing speed is 3 m/min, the beam current is 1000 A, and the beam width after flattening is 300 A.
It is mm.
上記のように発明例においては、板幅の端部から中央の
範囲において良好な膜厚分布が得られている。As described above, in the invention examples, a good film thickness distribution is obtained in the range from the ends to the center of the plate width.
(発明の効果)
この発明はとくに幅広の長尺物に対する連続的な蒸着処
理を存利に適合し、すなわちこの発明を用いれば、幅広
の基板であっても幅方向に均質な被膜を形成することが
できる。(Effects of the Invention) This invention is particularly suitable for continuous vapor deposition processing on wide and elongated objects, that is, by using this invention, a uniform coating can be formed in the width direction even on a wide substrate. be able to.
第1図(a)〜(c)は中空陰極の構造を示す端面図、
第2図(a) 、 (b)および第3図(a) 、 (
b)はプラズマビームの照射痕を示す模式図、
第4図はこの発明に従うプラズマビーム発生装置を示す
模式図である。
1−中空陰極 2.4・−プラズマビーム3
磁場発生器 5−るつぼ
6−蒸発源
第1図
第2図
(a)
(b)Figures 1 (a) to (c) are end views showing the structure of the hollow cathode;
Figure 2 (a), (b) and Figure 3 (a), (
b) is a schematic diagram showing irradiation marks of a plasma beam, and FIG. 4 is a schematic diagram showing a plasma beam generator according to the present invention. 1-Hollow cathode 2.4・-Plasma beam 3
Magnetic field generator 5- Crucible 6- Evaporation source Figure 1 Figure 2 (a) (b)
Claims (1)
照射されるプラズマビームの幅を拡大してへん平化する
磁場発生器とをそなえ、ホローカソードガンの中空陰極
は内側に中実の柱状体を同心配置してなることを特徴と
するプラズマビーム発生装置。 2、中空陰極は、Ta、W、およびLaB_6のうちか
ら選ばれる1種以上からなることを特徴とする請求項1
に記載のプラズマビーム発生装置。[Claims] 1. It is equipped with a hollow cathode gun and a magnetic field generator that expands the width and flattens the plasma beam irradiated from the hollow cathode gun, and the hollow cathode of the hollow cathode gun is solid inside. A plasma beam generator characterized by having columnar bodies arranged concentrically. 2. Claim 1, wherein the hollow cathode is made of one or more selected from Ta, W, and LaB_6.
The plasma beam generator described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3734689A JPH02217465A (en) | 1989-02-18 | 1989-02-18 | Plasma beam generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3734689A JPH02217465A (en) | 1989-02-18 | 1989-02-18 | Plasma beam generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02217465A true JPH02217465A (en) | 1990-08-30 |
Family
ID=12495018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3734689A Pending JPH02217465A (en) | 1989-02-18 | 1989-02-18 | Plasma beam generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02217465A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100684736B1 (en) * | 2005-11-30 | 2007-02-20 | 삼성에스디아이 주식회사 | Deposition device |
-
1989
- 1989-02-18 JP JP3734689A patent/JPH02217465A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100684736B1 (en) * | 2005-11-30 | 2007-02-20 | 삼성에스디아이 주식회사 | Deposition device |
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