JPH022198A - Manufacture of multidimensional quantum well structure - Google Patents
Manufacture of multidimensional quantum well structureInfo
- Publication number
- JPH022198A JPH022198A JP14724088A JP14724088A JPH022198A JP H022198 A JPH022198 A JP H022198A JP 14724088 A JP14724088 A JP 14724088A JP 14724088 A JP14724088 A JP 14724088A JP H022198 A JPH022198 A JP H022198A
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- quantum
- layer
- active layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000000694 effects Effects 0.000 claims abstract description 11
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は多次元量子井戸構造の製造方法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for manufacturing a multidimensional quantum well structure.
（従来の技術）
近年、有機金属気相エピタキシー（ＭＯＣＶＤ）技術、
分子線エピタキシー（ＭＢＥ）技術などの薄膜結晶成長
技術の急速な進展に伴い、単原子層の厚さの精度で急峻
な組成変化を持った良質なペテロ接合界面が製作される
ようになった。これらへテロ接合によって形成されるポ
テンシャル井戸構造、超格子構造はバルク構造に比べて
特異な光学特性、電気特性を示しデバイス応用への研究
が活発化している。(Prior art) In recent years, metal organic vapor phase epitaxy (MOCVD) technology,
With the rapid progress of thin film crystal growth techniques such as molecular beam epitaxy (MBE) technology, high-quality petrojunction interfaces with steep compositional changes can now be fabricated with the thickness precision of a single atomic layer. The potential well structure and superlattice structure formed by these heterojunctions exhibit unique optical and electrical properties compared to bulk structures, and research into device applications is intensifying.
量子井戸層を活性層とする量子井戸構造半導体レーザは
このような量子サイズ効果によって生じる高い状態密度
をもつ量子準位間の電子遷移を利用したもので、従来の
ダブルへテロ接合半導体レーザに比べ（１）低発振しき
い電流（２）温度安定性（３）高い発光効率（４）緩和
振動周波数の増大（５）スペクトル線幅、チャーピング
の低減など、多くの特徴を有していることが例えば、ア
ラカワ
（Ｙ、ＡＲＡＫＡＷＡ）等によりアイ・トリプル・イー
ジャーナル、オブ、カンタム、エレクトロニクス（ＩＥ
ＥＥ。A quantum well structure semiconductor laser with a quantum well layer as an active layer utilizes electronic transitions between quantum levels with a high density of states caused by such a quantum size effect, and is more efficient than a conventional double heterojunction semiconductor laser. (1) Low oscillation threshold current (2) Temperature stability (3) High luminous efficiency (4) Increased relaxation oscillation frequency (5) Reduced spectral line width and chirping, etc. For example, Arakawa (Y, ARAKAWA) et al.
E.E.
Ｊ、Ｑｕａｎｔｕｍ Ｅｌｅｃｔｒｏｎｉｃｓ）誌ＱＥ
−２２巻（１９８６年）１８８７〜１８９０頁に、報告
されている。また、同報告にあるようにこれらの優れた
特性は２次元平面内に電子および正孔を局在させたため
に生じた量子力学的効果によるが、さらに量子化次元数
を上げた多次元量子井戸構造により、−層の特性の向上
が期待される。また、多次元母子井戸構造は、ＦＥＴの
超高速化や、ＨＥＭＴなと電子デバイスの高性能化にも
大きな効果が得られる。J, Quantum Electronics) magazine QE
-22 (1986), pp. 1887-1890. In addition, as stated in the same report, these excellent properties are due to the quantum mechanical effect caused by localizing electrons and holes within a two-dimensional plane, but multidimensional quantum wells that further increase the number of quantization dimensions Depending on the structure, it is expected that the characteristics of the − layer will be improved. Furthermore, the multidimensional mother-child well structure has great effects in increasing the speed of FETs and improving the performance of electronic devices such as HEMTs.
（発明が解決しようとする課題）
多次元量子井戸構造としては、２次元量子井戸（量子井
戸細線）構造、３次元量子井戸（量子箱）構造があるが
、現状のリングラフィや電子ビーム等を用いた、プロセ
ス技術では１００ＯＡ（０，１層ｍ）程度が限界であり
、また、微４［ｎ領域への結晶成長も既存の技術では不
可能であることなど、微細加工技術、結晶成長技術など
の困難さのためにその実現は難しかった。(Problems to be Solved by the Invention) Multidimensional quantum well structures include two-dimensional quantum well (quantum well thin wire) structures and three-dimensional quantum well (quantum box) structures. The process technology used has a limit of about 100 OA (0.1 layer m), and crystal growth to the micro 4[n region is also impossible with existing technology. This was difficult to achieve due to such difficulties.
本発明の目的は、容易にかつ再現性良く実現することの
できる多次元量子井戸構造を提供することにある。An object of the present invention is to provide a multidimensional quantum well structure that can be easily realized with good reproducibility.
（課題を解決するための手段）
本発明では、半導体基板上に形成された微細な凹凸上に
量子効果の現われる程度に薄い半導体層を気相成長法に
より形成し、前記半導体層の一部の組成を前記凹凸の山
と谷とで変化させることによって前記半導体層を量子効
果の現われる程微細な大きさの領域に分割することによ
り、多次元量子井戸構造を実現する構成となっている。(Means for Solving the Problems) In the present invention, a semiconductor layer thin enough to produce a quantum effect is formed on fine irregularities formed on a semiconductor substrate by a vapor phase growth method, and a part of the semiconductor layer is By changing the composition between the peaks and valleys of the unevenness, the semiconductor layer is divided into regions so small that a quantum effect appears, thereby realizing a multidimensional quantum well structure.
（作用）
本発明では、半導体基板上に形成した微細な凹凸上に量
子効果の現われる程度に薄い半導体層を気相成長法によ
り形成し、前記半導体層の一部の組成を前記凹凸の山と
谷とで変化させることによって、前記半導体層を量子効
果の現われる程微細な大きさの領域に分割することがで
き、多次元量子井戸構造を容易にかつ再現性良く実現す
ることが可能である。以下にこの原理について第１図を
参照して詳細に説明する。(Function) In the present invention, a semiconductor layer thin enough to produce a quantum effect is formed on fine irregularities formed on a semiconductor substrate by a vapor phase growth method, and the composition of a part of the semiconductor layer is adjusted to match the peaks of the irregularities. By making a change between valleys and valleys, the semiconductor layer can be divided into regions of a size so small that a quantum effect appears, and a multidimensional quantum well structure can be easily realized with good reproducibility. This principle will be explained in detail below with reference to FIG.
第１図（Ａ）は、ＩｎＰ基板上に三光束干渉露光法によ
りその周期が１０００人の回折格子を形成したときの断
面図である。この上に気相成長法により、ＩｎＧａＡｓ
Ｐガイド層、ＩｎＧａＡｓ／ＩｎＧａＡｓＰ量子井戸構
造活性層を成長させると第１図（Ｂ）の断面図に示すよ
うに回折格子の谷の上の成長部分の組成が変化し活性層
が分断される。これは、主にＩＩＩ族の原子が谷の部分
に集まるためであり、組成が変化する部分の幅は谷の深
さ、ガイド層の厚さなどに依存する。よって、グレーテ
ィングの深さおよびガイド層厚を適度にすることにより
活性層として有効な領域の大きさを制御することが可能
である。したがって、量子井戸構造の活性層を成長させ
ることにより２次元量子井戸（量子細線）構造が得られ
る。FIG. 1(A) is a cross-sectional view of a diffraction grating having a period of 1000 people formed on an InP substrate by a three-beam interference exposure method. On top of this, InGaAs was deposited by vapor phase growth.
When the P guide layer and the InGaAs/InGaAsP quantum well structure active layer are grown, the composition of the grown portion above the valleys of the diffraction grating changes and the active layer is divided, as shown in the cross-sectional view of FIG. 1(B). This is because group III atoms mainly gather in the valley portion, and the width of the portion where the composition changes depends on the depth of the valley, the thickness of the guide layer, etc. Therefore, by adjusting the depth of the grating and the thickness of the guide layer, it is possible to control the size of the area effective as the active layer. Therefore, by growing an active layer having a quantum well structure, a two-dimensional quantum well (quantum wire) structure can be obtained.
さらに、たとえば二度の干渉露光法によって第２図（Ｂ
）に示すようにドツト状の凹凸を基板に形成しこの基板
上に量子井戸活性層を成長させることによって、３次元
量子井戸（量子箱）構造３４を実現できる。Further, for example, by using a double interference exposure method, as shown in FIG.
), a three-dimensional quantum well (quantum box) structure 34 can be realized by forming dot-like irregularities on a substrate and growing a quantum well active layer on this substrate.
（実施例）
本 発 明 に よ る５ＣＨ（Ｓｅｌｆ Ｃｏｎｆｉ
ｎｅｍｅｎｔＨｅｔｅｒｏｓｔｒｕｃｔｕｒｅ）構造の
２次元量子井戸半導体レーザの製造方法を第１図を参照
して詳細に説明する。成長法としては有機金属気相成長
（ＭＯＶＰＥ）法を用いた。第１図（Ａ）はｎ−ＩｎＰ
基板１ｏ上にＨｅ−Ｃｄレーザ光（波長３２５ｎｍ）を
用いた三光束干渉露光法によりパターニングし、Ｂｒ−
メタノール系エッチャントを用い約１０００人の周期で
断面が正弦波状、深さが５０ＯＡの微細な溝を形成した
断面図である。この後、ＭＯＶＰＥ法により、ｎ−Ｉｎ
ＧａＡｓＰガイド層２０（１，１５ｐｍ組成；厚さ〜０
．１５ｐｍ）、さらにアンドープＩｎＧａＡｓ Ｍ子井
戸層（厚さ７５人）およびアンドープＩｎＧａＡｓ量子
井戸層（厚さ７５人）およびアンドープＩｎＧａＡｓＰ
バリア層（１，１５ｐｍ組成；厚さ２００ん３層から成
る多重量子井戸層５５を成長させ、その後にアンドープ
ＩｎＧａＡｓＰガイド層６０（１，１５ｐｍ組成；厚さ
５００人）、ｐ−ＩｎＧａＡｓＰガイド層６２（１，１
５ｐｍ組成；厚さ５００人） 、ｐＪｎＰクラシト層７
０層厚０２層ｍ） 、ｐ＋−ＩｎＧａＡｓＰコンタクト
層８０（厚さ０．２１１ｍ）を形成した。(Example) 5CH (Self Confidence) according to the present invention
A method for manufacturing a two-dimensional quantum well semiconductor laser having a (nementheterostructure) structure will be described in detail with reference to FIG. As the growth method, metal organic vapor phase epitaxy (MOVPE) was used. Figure 1 (A) is n-InP
Patterning was performed on the substrate 1o by a three-beam interference exposure method using He-Cd laser light (wavelength 325 nm), and Br-
This is a cross-sectional view in which fine grooves with a sinusoidal cross section and a depth of 50 OA are formed using a methanol-based etchant at a period of approximately 1000 times. After this, by MOVPE method, n-In
GaAsP guide layer 20 (1,15 pm composition; thickness ~ 0
．． 15 pm), and further undoped InGaAs M quantum well layer (75 pm thick) and undoped InGaAs quantum well layer (75 pm thick) and undoped InGaAsP
A barrier layer (composition of 1.15 pm; thickness of 200 mm) A multi-quantum well layer 55 consisting of 3 layers is grown, followed by an undoped InGaAsP guide layer 60 (composition of 1.15 pm; thickness of 500 mm) and a p-InGaAsP guide layer 62. (1,1
5pm composition; thickness 500 layers), pJnP cracito layer 7
A p + -InGaAsP contact layer 80 (thickness: 0.211 m) was formed.
このように形成した２次元量子井戸構造を高分解能電子
顕微鏡で観察したところ、幅がおよそ１００人に分割さ
れた量子細線が形成されていた。またフォトルミネッセ
ンス・スペクトルを測定したところ、量子細線がらの波
長１．５３ｐｍの発光と組成変化領域からのブロードな
発光（中心波長１．２ｐｍ）が観察された。When the two-dimensional quantum well structure thus formed was observed using a high-resolution electron microscope, it was found that quantum wires with a width of about 100 were formed. Furthermore, when photoluminescence spectra were measured, light emission at a wavelength of 1.53 pm from the quantum wires and broad light emission (center wavelength 1.2 pm) from the compositional change region were observed.
上記の方法により形成した５ＣＨ２次元量子井戸構造を
用いて、二重チャネル形埋め込み構造分布帰還形（ＤＣ
−ＰＢＨ−ＤＦＢ）半導体レーザを製作した。共振器長
を３００１１ｍとして襞間して素子特性を評価したとこ
ろ、初めて室温においてＣＷ全発振、その発振しきい値
は３０〜４０ｍＡが得られた。基板に凹凸をより精度良
く、均一に形成するプロセス技術の改善や結晶成長の改
良により、より急峻な界面をもつ量子井戸構造を形成す
ることなどによりさらに低しきい値での発振が十分可能
であると考えられる。Using the 5CH two-dimensional quantum well structure formed by the above method, a double channel buried structure distributed feedback type (DC
-PBH-DFB) semiconductor laser was manufactured. When the device characteristics were evaluated with a resonator length of 30011 m between the folds, full CW oscillation at room temperature and an oscillation threshold of 30 to 40 mA were obtained for the first time. Improvements in process technology to more accurately and uniformly form irregularities on the substrate and improvements in crystal growth have made it possible to oscillate at even lower thresholds by forming quantum well structures with steeper interfaces. It is believed that there is.
また特性温度として１８０Ｋが得られ極めて良好な温度
安定性が認められた。発振スペクトルとしては２次元量
子井戸からの発光による波長１．５５μｍの強く鋭いス
ペクトルが観察された。このスペクトルの線幅を測定し
たところ、線幅・先出力積として３ＭＨｚ−ｍＷ、最小
線幅は５ｍＷ出力時で０．６ＭＨｚが得られた。また緩
和振動周波数とし２Ｉ、ｈにおいて１５ＧＨｚと従来の
２倍程度の高い値が得られた。基板に凹凸をより精度良
く、均一に形成するプロセス技術の改善や結晶成長の改
良により、より急峻な界面をもつ量子井戸構造を形成す
ることなどによりさらに特性の向上が望める。Further, a characteristic temperature of 180K was obtained, indicating extremely good temperature stability. As for the oscillation spectrum, a strong and sharp spectrum with a wavelength of 1.55 μm due to light emission from the two-dimensional quantum well was observed. When the linewidth of this spectrum was measured, the linewidth/prior power product was 3MHz-mW, and the minimum linewidth was 0.6MHz at 5mW output. In addition, a relaxation vibration frequency of 15 GHz at 2I, h was obtained, which is about twice as high as that of the conventional method. Further improvements in properties can be expected by improving process technology to more accurately and uniformly form irregularities on the substrate and by improving crystal growth to form quantum well structures with steeper interfaces.
このような良好な特性を有する上記多次元量子構造半導
体レーザは、高速コヒーレント伝送用光源などに十分応
用可能である。The multidimensional quantum structure semiconductor laser having such good characteristics is fully applicable to a light source for high-speed coherent transmission.
また、ＩｎＰ系の材料に限らず、ＧａＡｓ系の材料でも
全く同様な効果が期待される。Furthermore, not only InP-based materials but also GaAs-based materials are expected to have exactly the same effect.
以上の実施例では三光束干渉露光法による凹凸基板を用
いた場合を例に説明したが他の方法、例えば、電子ビー
ム露光、Ｘ線露光、イオンビーム露光などの方法によっ
てさらに微細でかつ均一で精度の高い凹凸基板を用いる
ことにより各量子井戸構造の大きさの不均一性を数％程
度以下に抑えることによってより高性能な多次元量子構
造を製作することが可能である。In the above embodiments, a case where a convex-concave substrate was used by three-beam interference exposure method was explained as an example, but other methods such as electron beam exposure, X-ray exposure, ion beam exposure, etc. By using a highly accurate uneven substrate, it is possible to suppress the non-uniformity of the size of each quantum well structure to about several percent or less, thereby making it possible to manufacture a multidimensional quantum structure with higher performance.
以上では、多次元量子構造を半導体レーザに応用した場
合について説明したが、他の半導体デバイス、例えば共
鳴トンネル・ホットエレクトロントランジスタ（ＲＨＥ
Ｔ）のトンネリング部分や、電界効果形トランジスタ（
ＦＥＴ）や高移動度トランジスタ（ＨＥＭＴ）等のチャ
ネル領域に量子井戸構造を採用するなど電子デバイスに
ついても容易に応用可能である。Above, we have explained the application of multidimensional quantum structures to semiconductor lasers, but other semiconductor devices, such as resonant tunnel hot electron transistors (RHE), have been described.
T) tunneling part and field effect transistor (
It can also be easily applied to electronic devices such as adopting a quantum well structure in the channel region of FET) and high mobility transistor (HEMT).
また、ＭＯＶＰＥ法を例に説明したが、ハイドライドＶ
ＰＥ法、ＭＢＥ法など他の気相成長法でも可能である。In addition, although the MOVPE method was explained as an example, the hydride V
Other vapor phase growth methods such as PE method and MBE method are also possible.
（発明の効果）
以上述べてきたように、本発明によれば従来のプロセス
技術によって容易にしかも再現性良く多次元量子井戸構
造を実現することができる。(Effects of the Invention) As described above, according to the present invention, a multidimensional quantum well structure can be easily realized with good reproducibility using conventional process technology.
第１図は本発明の第１の実施例を示す説明図である。第
２図は第１の実施例を示す説明図である。
１０はｎ−ＩｎＰ基板、１５はグレーティング、２０は
ｎ−ＩｎＧａＡｓＰガイド層、３０は量子井戸構造、３
３は２次元量子井戸（量子細線）構造、３４は３次元量
子井戸（量子箱）構造、３５は組成変化領域、６０はＩ
ｎＧａＡｓＰガイド層である。
第１図FIG. 1 is an explanatory diagram showing a first embodiment of the present invention. FIG. 2 is an explanatory diagram showing the first embodiment. 10 is an n-InP substrate, 15 is a grating, 20 is an n-InGaAsP guide layer, 30 is a quantum well structure, 3
3 is a two-dimensional quantum well (quantum wire) structure, 34 is a three-dimensional quantum well (quantum box) structure, 35 is a composition change region, and 60 is an I
This is an nGaAsP guide layer. Figure 1
Claims (1)
われる程度に薄い半導体層を気相成長法により形成し、
前記半導体層の一部の組成を前記凹凸の山と谷とで変化
させることによって前記半導体層を量子効果の現われる
程微細な大きさの領域に分割することを特徴とする多次
元量子井戸構造の製造方法。A semiconductor layer thin enough to produce a quantum effect is formed on fine irregularities formed on a semiconductor substrate using a vapor phase growth method.
A multidimensional quantum well structure characterized in that the semiconductor layer is divided into regions with a size so small that a quantum effect appears by changing the composition of a part of the semiconductor layer between the peaks and valleys of the unevenness. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14724088A JPH022198A (en) | 1988-06-14 | 1988-06-14 | Manufacture of multidimensional quantum well structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14724088A JPH022198A (en) | 1988-06-14 | 1988-06-14 | Manufacture of multidimensional quantum well structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH022198A true JPH022198A (en) | 1990-01-08 |
Family
ID=15425747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14724088A Pending JPH022198A (en) | 1988-06-14 | 1988-06-14 | Manufacture of multidimensional quantum well structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH022198A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296719A (en) * | 1991-07-22 | 1994-03-22 | Matsushita Electric Industrial Co., Ltd. | Quantum device and fabrication method thereof |
| JP2017017279A (en) * | 2015-07-06 | 2017-01-19 | 三菱電機株式会社 | Semiconductor device |
| DE112007000358B4 (en) | 2006-02-15 | 2019-07-04 | Toyota Jidosha Kabushiki Kaisha | The fuel cell system |
| US10689599B2 (en) | 2015-09-28 | 2020-06-23 | Ecolab Usa Inc. | DEA-free pot and pan cleaner for hard water use |
-
1988
- 1988-06-14 JP JP14724088A patent/JPH022198A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296719A (en) * | 1991-07-22 | 1994-03-22 | Matsushita Electric Industrial Co., Ltd. | Quantum device and fabrication method thereof |
| DE112007000358B4 (en) | 2006-02-15 | 2019-07-04 | Toyota Jidosha Kabushiki Kaisha | The fuel cell system |
| JP2017017279A (en) * | 2015-07-06 | 2017-01-19 | 三菱電機株式会社 | Semiconductor device |
| US10689599B2 (en) | 2015-09-28 | 2020-06-23 | Ecolab Usa Inc. | DEA-free pot and pan cleaner for hard water use |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5313484A (en) | Quantum box or quantum wire semiconductor structure and methods of producing same | |
| US4748132A (en) | Micro fabrication process for semiconductor structure using coherent electron beams | |
| JPH07221392A (en) | Quantum wire manufacturing method, quantum wire, quantum wire laser, quantum wire laser manufacturing method, diffraction grating manufacturing method, and distributed feedback semiconductor laser | |
| US5037776A (en) | Method for the epitaxial growth of a semiconductor structure | |
| JP2000012961A (en) | Semiconductor laser | |
| JP2779056B2 (en) | Electrically tunable semiconductor laser | |
| US5040032A (en) | Semiconductor superlattice heterostructures on non-planar substrates | |
| US4974036A (en) | Semiconductor superlattice heterostructures on nonplanar substrates | |
| JPH022198A (en) | Manufacture of multidimensional quantum well structure | |
| JPH0590636A (en) | Quantum effect device | |
| US6933159B2 (en) | Fabrication method of a semiconductor laser device | |
| JPH08236857A (en) | Long wavelength semiconductor laser and its manufacture | |
| JPH04350988A (en) | Light-emitting element of quantum well structure | |
| JP3382309B2 (en) | Semiconductor device | |
| JP3278035B2 (en) | Quantum box structure with current confinement structure and its fabrication method | |
| US5360763A (en) | Method for fabricating an optical semiconductor device | |
| JP3191669B2 (en) | Semiconductor distributed feedback laser device and method of manufacturing the same | |
| JPH04280629A (en) | Manufacturing method of film stepwise structure and semiconductor device using the same | |
| DE69219688T2 (en) | Semiconductor device and method of manufacturing the same | |
| JP2682474B2 (en) | Semiconductor laser device | |
| JPH01248586A (en) | Manufacture of optical semiconductor device | |
| JPH02101784A (en) | Manufacture of quantum well fine wire and quantum well box and quantum well fine wire laser | |
| JPH05167187A (en) | Semiconductor laser | |
| JPH0231479A (en) | Manufacture of semiconductor quantum box structure | |
| JPH06283803A (en) | Semiconductor light emitting device |