JPH02230708A - Solid-state electrolytic capacitor - Google Patents
Solid-state electrolytic capacitorInfo
- Publication number
- JPH02230708A JPH02230708A JP1051541A JP5154189A JPH02230708A JP H02230708 A JPH02230708 A JP H02230708A JP 1051541 A JP1051541 A JP 1051541A JP 5154189 A JP5154189 A JP 5154189A JP H02230708 A JPH02230708 A JP H02230708A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- conductive polymer
- metal plate
- polymer thin
- heterocyclic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 67
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 150000002391 heterocyclic compounds Chemical class 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000011810 insulating material Substances 0.000 claims abstract description 7
- 239000007787 solid Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 8
- 238000006116 polymerization reaction Methods 0.000 abstract description 8
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000003973 paint Substances 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 239000012212 insulator Substances 0.000 description 6
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000007784 solid electrolyte Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000003115 supporting electrolyte Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical class CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- -1 virol Chemical class 0.000 description 1
Landscapes
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はピロール、フラン、チ才フェン等の複素環式化
合物の導電性ポリマー薄膜層を電解質とする固体電解コ
ンデンサに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid electrolytic capacitor using a conductive polymer thin film layer of a heterocyclic compound such as pyrrole, furan, or thiophene as an electrolyte.
従来固体電解コンデンサには、二酸化マンガン（ Ｍ
ｎ Ｏ ＊ ）やＴＣＮＱ塩等を固体電解質としたもの
があるが、この二酸化マンガン（ＭｎＯ．）やＴＣＮＱ
塩等を固体電解質とする固体電解コンデンサはその製造
等に難点があった。Conventional solid electrolytic capacitors contain manganese dioxide (M
There are solid electrolytes made of manganese dioxide (MnO.), TCNQ salt, etc.
Solid electrolytic capacitors that use salt or the like as a solid electrolyte have some difficulties in manufacturing.
そこで本出願人は製造が容易でコンデンサ特性の優れた
複素環式化合物の導電性ボリマー層を固体電解質とする
新しい型の固体電解コンデンサを開発している（例えば
、特開昭６１−２３１５号公報、特開昭６０−２４４０
１７号公報、特願昭６２−７３７４１号等）。Therefore, the present applicant has developed a new type of solid electrolytic capacitor that uses a conductive polymer layer of a heterocyclic compound as a solid electrolyte, which is easy to manufacture and has excellent capacitor characteristics (for example, Japanese Patent Laid-Open No. 61-2315 , JP-A-60-2440
No. 17, Japanese Patent Application No. 1983-73741, etc.).
この固体電解コンデンサはアルミニュウム、タンタル、
チタン等の金属基体の表面に誘電体酸化皮膜層、ビロー
ル等の複素環式化合物の導電性ボノマー薄膜層及び電極
取り出しのための導電体層を順次形成したものである。This solid electrolytic capacitor is made of aluminum, tantalum,
A dielectric oxide film layer, a conductive bonomer thin film layer of a heterocyclic compound such as virol, and a conductive layer for electrode extraction are sequentially formed on the surface of a metal substrate such as titanium.
上記固体重解コンデンサにおいて、金属基体の表面に形
成された誘重体酸化皮膜の上にピロール等の複素環式化
合物の導電性ボリマー薄膜層を形成するには、金属基体
をビロール等の複素環式化合物及び支持電解質を含む電
解液中に浸し、金属体を陽極、電解液を陰極として所定
の直流電流を通電し、重解酸化重合により行なっている
。In the above-mentioned solid decomposition capacitor, in order to form a conductive polymer thin film layer of a heterocyclic compound such as pyrrole on the dielectric oxide film formed on the surface of the metal substrate, it is necessary to The metal body is immersed in an electrolytic solution containing a compound and a supporting electrolyte, and a predetermined direct current is passed through the metal body as an anode and the electrolyte as a cathode, thereby carrying out polymerization and oxidation polymerization.
この電解酸化重合による複素環式化合物の導里性ポリマ
ー薄膜滑の形成において、該導電性ボリマー薄膜は第６
図（ａ），（ｂ）．（ｃ）に示すように金属体の外周部
から中央に向かって成長して行く。従って、金属体の面
積が小さい場合は、この導電性ボリマー薄膜は金属体の
全面に略均等に形成されるが、第７図（ａ），（ｂ）に
示すように金属体の面積が大きい場合は中央部の導電性
ポリマー薄膜の厚さが外周部のそれより薄くなるか、或
るは中央部に形成されないという問題がある。In the formation of a conductive polymer thin film of a heterocyclic compound by electrolytic oxidative polymerization, the conductive polymer thin film is
Figures (a), (b). As shown in (c), it grows from the outer periphery of the metal body toward the center. Therefore, when the area of the metal body is small, this conductive polymer thin film is formed almost uniformly over the entire surface of the metal body, but as shown in FIGS. 7(a) and (b), the area of the metal body is large. In this case, there is a problem that the thickness of the conductive polymer thin film in the central part is thinner than that in the outer peripheral part, or it is not formed in the central part.
また、誘電体酸化皮膜の形成電圧が高くなると、複素環
式化合物の導電性ポリマー薄膜層の形成が困難になると
いう問題もあった。Furthermore, when the voltage for forming the dielectric oxide film becomes high, there is also the problem that it becomes difficult to form a conductive polymer thin film layer of a heterocyclic compound.
そしてこれらの問題は完成した固体電解コンデンサの容
量にバラツキ等を生じ製品の品質向上の障害となるとい
う欠点があった。These problems have the disadvantage that they cause variations in the capacitance of completed solid electrolytic capacitors and become an obstacle to improving the quality of the product.
本発明は上述の点に鑑みてなされたもので金属体の面積
の大／ＪＸにかかわらず複素環式化合物の導電性ボリマ
ー薄膜層が略均一に形成でき容量のバラツキ等の少ない
品質の優れた固体電解コンデンサを提供することにある
。The present invention has been made in view of the above-mentioned points, and it is possible to form a conductive polymer thin film layer of a heterocyclic compound almost uniformly regardless of the large area of the metal body, and to achieve excellent quality with less variation in capacitance. Our objective is to provide solid electrolytic capacitors.
上記課題を解決するため本発明は、金属基体の表面に誘
電体酸化皮膜層、複素環式化合物の導電性ポリマー薄膜
層及び電極取り出しのための導電体層を順次形成してな
る固体電解コンデンサにおいて、金属基体の複素環式化
合物の導電性ボリマー薄膜層を形成する部分の所定個所
に一個又は複数の穴を形成するか或いは絶縁物を被覆し
てなる絶縁物被覆部を形成したことを特徴とする。In order to solve the above problems, the present invention provides a solid electrolytic capacitor in which a dielectric oxide film layer, a conductive polymer thin film layer of a heterocyclic compound, and a conductive layer for electrode extraction are sequentially formed on the surface of a metal substrate. , characterized in that one or more holes are formed in a predetermined position of the portion of the metal substrate on which the conductive polymer thin film layer of the heterocyclic compound is to be formed, or an insulating material coating portion is formed by coating the metal substrate with an insulating material. do.
上記の如く金属基体の複素環式化合物の導電性ポリマー
薄膜層を形成する部分の所定個所に一個又は複数の穴を
形成するか或いは絶縁物の被覆部を形成することにより
、金属体と電解液容器との間に直流電圧を印加して電解
酸化重合を行なった場合、ｔ流密度が金属基体の外周部
及び穴或いは絶縁物の被覆部周辺が大きくなるため、複
素環式化合物の導電性ボリマー薄膜はこの金属基体の外
周部及び穴或いは絶縁物の被覆部の周辺から成長してい
くため、導電性ポリマー薄膜は金属基体の全表面に略均
一に形成されると共に、その形成時間も短くなる。As described above, by forming one or more holes at a predetermined location in the portion of the metal substrate where the conductive polymer thin film layer of the heterocyclic compound is to be formed, or by forming an insulating coating, the metal body and the electrolyte can be connected to each other. When electrolytic oxidation polymerization is performed by applying a DC voltage between the container and the container, the t-flow density increases around the outer periphery of the metal substrate and around the hole or insulator coating, so the conductive polymer of the heterocyclic compound Since the thin film grows from the outer periphery of the metal substrate and around the hole or insulating coating, the conductive polymer thin film is formed almost uniformly over the entire surface of the metal substrate, and the formation time is shortened. .
以下、本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第１図（ａ）．（ｂ）はそれぞれ本発明の固体電解コン
デンサに用いる金属基の形状を示す区である。第１図（
ａ）に示すものは、コンデンサの金属基体となる金属板
１の表面所定位置に絶縁塗料を塗布して絶縁層２を形成
し、該絶縁層２で区分された部分の一方の略中央部分に
１個の穴３を形成したものである。また、第１図（ｂ）
に示すものは、絶縁層２で区分された一方の部分に複数
個の穴４を形成したものである。この金属板１に用いる
金属としてはアルミニウム、チタン、タンタル等表面に
誘電体酸化皮膜を形成できる金属を用いる。前記絶縁層
２及び穴３，４の形成は金届板１の表面に誘電体酸化皮
膜を形成する前に行なってもよいし、また、反対に金属
板１の表面に誘電体酸化皮膜を形成してから形成しても
よい。Figure 1(a). (b) is a section showing the shape of the metal group used in the solid electrolytic capacitor of the present invention. Figure 1 (
In the case shown in a), an insulating paint is applied to a predetermined position on the surface of a metal plate 1, which serves as a metal base of the capacitor, to form an insulating layer 2, and approximately in the center of one of the parts divided by the insulating layer 2. One hole 3 is formed. Also, Fig. 1(b)
In the example shown in FIG. 1, a plurality of holes 4 are formed in one portion divided by an insulating layer 2. The metal used for this metal plate 1 is a metal capable of forming a dielectric oxide film on its surface, such as aluminum, titanium, or tantalum. The insulating layer 2 and the holes 3 and 4 may be formed before forming the dielectric oxide film on the surface of the metal plate 1, or conversely, forming the dielectric oxide film on the surface of the metal plate 1. It may be formed after that.
前記金属板１の絶縁層２で区分され、穴３，４が形成さ
れた部分をピローノ呟フラン、チ才フェン等の複素環式
化合物及び支持電解質を含む電解液中に浸し、金属板１
を陽極、Ｔ解液を収容した容器を陰極として所定の直流
電流を通電し電解酸化重合により、複素環式化合物の導
電性ポリマー薄膜を形成する。The part of the metal plate 1 that is divided by the insulating layer 2 and in which the holes 3 and 4 are formed is immersed in an electrolytic solution containing a supporting electrolyte and a heterocyclic compound such as pyronofuran or chisaifen.
A predetermined direct current is applied using the T solution as an anode and the container containing the T solution as a cathode, and electrolytic oxidative polymerization is performed to form a conductive polymer thin film of a heterocyclic compound.
金属板１を上記形状にすることにより、電解酸化重合を
行なうと、第１図（ａ）に示す金属板１の場合は、金属
板１の外周部及び穴３の周囲の寛流密度が大きくなるた
め、第２図（ａ）．（ｂ），（Ｃ）に示すように、金属
板１の外周部及び穴３の周囲から複素環式化合物の導電
性ボリマー薄膜５が成長する。その結果、金属板１の穴
３が形成されない金属板の場合に比較し、表面に略均一
の複素環式化合物の導電性ポリマー薄膜５が短時間に形
成される。When electrolytic oxidative polymerization is performed by forming the metal plate 1 into the above shape, in the case of the metal plate 1 shown in FIG. Therefore, Fig. 2(a). As shown in (b) and (C), a conductive polymer thin film 5 of a heterocyclic compound grows from the outer periphery of the metal plate 1 and around the hole 3. As a result, a substantially uniform conductive polymer thin film 5 of a heterocyclic compound is formed on the surface in a shorter time than in the case of a metal plate 1 without holes 3 formed therein.
また、第１図（ｂ）に示す金属板１の場合は、金属板１
の外周部及び穴４の周囲の電流密度が大きくなるため、
第３図（ａ），（ｂ）．（Ｃ）に示すように、金属板１
の外周部及び穴４の周囲から複素環式化合物の導電性ボ
リマー薄膜５が成長し、表面に略均一の複素環式化合物
の導電性ポリマー薄膜５が短時間に形成される。In addition, in the case of the metal plate 1 shown in FIG. 1(b), the metal plate 1
Since the current density around the outer periphery of and around hole 4 increases,
Figure 3 (a), (b). As shown in (C), metal plate 1
A conductive polymer thin film 5 of a heterocyclic compound grows from the outer periphery of the hole 4 and around the hole 4, and a substantially uniform conductive polymer thin film 5 of a heterocyclic compound is formed on the surface in a short time.
なお、上記実施例では金属板１に穴３又は穴４を形成す
る例を示したが、この穴３又は穴４を形成する部分を絶
縁物で被覆し、穴３又は穴４と同形状の絶縁物被覆部を
形成してもよい。このように金属板に１個又は複数の絶
縁物被覆部を形成した場合も、竃解酸化重合に際して金
属板１の外周部及び絶縁物被覆部の周辺の電流密度は大
きくなり、この部分から複素環式化合物の導電性ボリマ
ー薄膜が成長するから、上記穴３又は複数の穴４を形成
した金属板１の場合と略同様となる。In addition, in the above embodiment, an example was shown in which holes 3 or 4 are formed in the metal plate 1, but the part where the holes 3 or 4 are formed is covered with an insulating material, and a hole 3 or 4 having the same shape as the hole 3 or 4 is An insulator coating may also be formed. Even when one or more insulator coatings are formed on a metal plate in this way, the current density around the outer periphery of the metal plate 1 and the insulator coating increases during the furnace oxidation polymerization, and complex Since a conductive polymer thin film of a cyclic compound is grown, the result is substantially the same as in the case of the metal plate 1 in which the hole 3 or a plurality of holes 4 are formed.
上記複素環式化合物の導電性ポリマー薄膜５の上に電極
取り出しのための導電体層として、グラファイト層及び
銀ペースト層を順次形成し、金属板１の絶縁層２で区分
された他方の部分（穴３，４が形成されない部分）に陽
極端子、前記銀ぺ一スト層に陰極端子をそれぞれ取り付
けることにより固体電解コンデンサが完成する。また、
場合によっては樹脂等の外装を施す。A graphite layer and a silver paste layer are sequentially formed on the conductive polymer thin film 5 of the heterocyclic compound as a conductive layer for taking out the electrode, and the other portion of the metal plate 1 separated by the insulating layer 2 ( A solid electrolytic capacitor is completed by attaching an anode terminal to the portion where holes 3 and 4 are not formed and a cathode terminal to the silver paste layer. Also,
In some cases, an exterior coating such as resin is applied.
なお、上記複素環式化合物の導電性ポリマー薄膜の形成
方法の詳細は、本出願人が先に出願した特願昭６２−２
２７６４７号に開示しており、本発明に直接関係がない
ので説明は省略する。The details of the method for forming the conductive polymer thin film of the above-mentioned heterocyclic compound can be found in Japanese Patent Application No. 1983-2 previously filed by the present applicant.
No. 27647, and since it is not directly related to the present invention, a description thereof will be omitted.
第４図（ａ），（ｂ）はそれぞれ金属板１に穴３を設け
ない場合と設けた場合の固体電解コンデンサの容量分布
状態を示す図である。ここで用いた金属板１は同図（ｃ
）に示すように絶縁層２で区分さ・れた一方の部分の寸
法が、ｗ．１４ｍ、横１０＝、穴３を設ける場合はこの
穴３の直径を１．７ｍとし、この金属板１を用いて定格
電圧１６ＷＶ及び定格容量３３μＦの固体電解コンデン
サをそれぞれ１０個（ｎ−１０）製造し、その容量分布
状態を示している。FIGS. 4(a) and 4(b) are diagrams showing the capacitance distribution state of the solid electrolytic capacitor when no hole 3 is provided in the metal plate 1 and when it is provided, respectively. The metal plate 1 used here is shown in the same figure (c
), the dimensions of one portion divided by the insulating layer 2 are w. 14 m, width 10 =, if hole 3 is provided, the diameter of this hole 3 is 1.7 m, and using this metal plate 1, 10 solid electrolytic capacitors (n-10) each with a rated voltage of 16 WV and a rated capacity of 33 μF are installed. manufactured and its capacity distribution state is shown.
金属板１に穴３を設けない場合は、第４図（ａ）に示す
ように容量は３０乃至３６μＦの範囲に分布するのに対
して、穴３を設けた場合は第４図（ｂ）に示すように、
容量は３２乃至３６μＦの範囲に分布することになる。When the hole 3 is not provided in the metal plate 1, the capacitance is distributed in the range of 30 to 36 μF as shown in FIG. As shown in
The capacitance will be distributed in the range of 32 to 36 μF.
穴３を設けることにより、容量のバラッキが小さくなる
ことが確認できる。It can be confirmed that by providing the hole 3, the variation in capacity is reduced.
第５図（ａ），（ｂ）はそれぞれ金属板１に穴３を設け
ない場合と設けた場合の複素環式化合物の導電性ポリマ
ー薄膜の厚さの測定結果を示す図である。ここでは第４
図（Ｃ）に示すものと同じ寸法形状の金属板１を用い、
測定点ｎ＝２０における複素環式化合物の導電性ボリマ
ー薄膜の厚さを測定した結果を示す。FIGS. 5(a) and 5(b) are diagrams showing the measurement results of the thickness of a conductive polymer thin film of a heterocyclic compound when holes 3 are not provided in metal plate 1 and when holes 3 are provided, respectively. Here, the fourth
Using a metal plate 1 having the same dimensions and shape as shown in Figure (C),
The results of measuring the thickness of a conductive polymer thin film of a heterocyclic compound at measurement points n=20 are shown.
金属板１に穴３を設けない場合は、第５図（ａ）に示す
ように複素環式化合物の導電性ボリマー薄膜の厚さは１
０乃至７５μｍの範囲に分布するのに対して、穴３を設
けた場合は第５図（ｂ）に示すように３０乃至５５μｍ
の範囲に分布することになる。即ち、穴３を設けること
により、導電性ポリマー薄膜の厚さが略均一になること
が確認できる。When the hole 3 is not provided in the metal plate 1, the thickness of the conductive polymer thin film of the heterocyclic compound is 1 as shown in FIG. 5(a).
The diameter ranges from 0 to 75 μm, whereas when hole 3 is provided, the diameter ranges from 30 to 55 μm as shown in Figure 5(b).
The distribution will be within the range of . That is, it can be confirmed that by providing the holes 3, the thickness of the conductive polymer thin film becomes approximately uniform.
なお、上記実施例ではコンデンサの金属基体として金属
板１を絶縁層２で区分しその一方に穴３又は穴４或いは
絶縁物被覆部を形成したものを示したが、金属基体はこ
れに限定されるものでなく、例えば金属基体の寸法形状
、穴及び絶縁物被覆部の形状寸法等には特別な限定はな
い。In the above embodiments, the metal plate 1 is divided by the insulating layer 2 and the hole 3 or 4 or the insulating material coating is formed on one side as the metal base of the capacitor, but the metal base is not limited to this. For example, there are no particular limitations on the size and shape of the metal base, the shape and size of the hole and the insulator coating, etc.
以上説明したように本発明によれば、金属基体の複素環
式化合物の導電性ボリマー薄膜層を形成する部分の所定
個所に一個又は複数の穴を形成するか或いは一個又は複
数の絶縁物被覆部を形成することにより、下記のような
優れた効果が得られる。As explained above, according to the present invention, one or more holes are formed at predetermined locations in the portion of the metal substrate where the conductive polymer thin film layer of the heterocyclic compound is to be formed, or one or more insulating coating portions are formed. By forming this, the following excellent effects can be obtained.
（１〉複素環式化合物の導電性ボリマー薄膜は金属基体
の全表面に略均一に形成できるためコンデンサ容量のバ
ラッキが少なく製品の品質が向上する。(1) Since the conductive polymer thin film of the heterocyclic compound can be formed substantially uniformly over the entire surface of the metal substrate, there is less variation in capacitor capacity and the quality of the product is improved.
（２）複素環式化合物の導電性ボリマー薄膜は金属基体
の外周部からのみではなく、一個又は複数の穴或いは絶
縁物の被覆部周辺からも成長するから、導竃性ポリマー
薄膜の形成時間の短縮が可能となる。(2) Since the conductive polymer thin film of the heterocyclic compound grows not only from the outer periphery of the metal substrate but also from the vicinity of one or more holes or the insulator coating, the formation time of the conductive polymer thin film can be reduced. Shortening is possible.
第１図（ａ）．（ｂ）はそれぞれ本発明の固体電解コン
デンサに用いる金属基体の形状を示す図、第２図（ａ）
，（ｂ），（ｃ）は第１図（ａ）に示す金属板の表面に
複素環式化合物の導電性ポリマー薄膜が形成されていく
状態を示す図、第３図（ａ），（ｂ），（Ｃ）は第１図
（ｂ）に示す金属板の表面に複素環式化合物の導電性ポ
リマー薄膜が形成詐れていく状態を示す図、第４図（ａ
）．（ｂ）はそれぞれ金属板に穴を設けない場合と設け
た場合の固体電解コンデンサの容量分布状態を示す図、
同図（Ｃ）はそれに用いる金属板の形状を示す図、第５
図＃（ａ），（ｂ）はそれぞれ金属板に穴を設けない場
合と設けた場合の複素環式化合物の導電性ボリマー薄膜
の厚詐の測定結果を示す図、第６図（ａ），（ｂ），（
ｃ）及び第７図（ａ），（ｂ）は従来の金属板に複素環
式化合物の導電性ボリマー薄膜が形成されていく状態を
示す図である。
図中、１・・・・金属板、２・・・・絶縁層、３，４・
・・・穴、５・・・・複素環式化合物の導電性ボリマー
薄膜。Figure 1(a). (b) is a diagram showing the shape of the metal substrate used in the solid electrolytic capacitor of the present invention, and FIG. 2 (a)
, (b) and (c) are diagrams showing the state in which a conductive polymer thin film of a heterocyclic compound is formed on the surface of the metal plate shown in Figure 1 (a), and Figures 3 (a) and (b). ), (C) are diagrams showing the state in which a conductive polymer thin film of a heterocyclic compound is formed on the surface of the metal plate shown in Figure 1 (b), and Figure 4 (a).
). (b) is a diagram showing the capacitance distribution state of a solid electrolytic capacitor with and without holes in the metal plate, respectively;
Figure 5 (C) is a diagram showing the shape of the metal plate used for it.
Figures #6 (a) and (b) show the results of measuring the thickness of a conductive polymer thin film of a heterocyclic compound when holes are not provided and when holes are provided in the metal plate, respectively. (b), (
c) and FIGS. 7(a) and 7(b) are diagrams showing the state in which a conductive polymer thin film of a heterocyclic compound is formed on a conventional metal plate. In the figure, 1...metal plate, 2...insulating layer, 3, 4...
... Hole, 5 ... Conductive polymer thin film of heterocyclic compound.
Claims (1)
導電性ポリマー薄膜層及び電極取り出しのための導電体
層を順次形成してなる固体電解コンデンサにおいて、前
記金属基体の複素環式化合物の導電性ポリマー薄膜層を
形成する部分の所定個所に一個又は複数の穴を形成する
か或いは絶縁物を被覆してなる一個又は複数個の絶縁物
被覆部を形成したことを特徴とする固体電解コンデンサ
。A solid electrolytic capacitor in which a dielectric oxide film layer, a conductive polymer thin film layer of a heterocyclic compound, and a conductive layer for taking out an electrode are sequentially formed on the surface of a metal substrate, wherein A solid electrolytic capacitor characterized in that one or more holes are formed in a predetermined location of a portion where a conductive polymer thin film layer is formed, or one or more insulating material coating portions are formed by coating with an insulating material. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1051541A JPH02230708A (en) | 1989-03-03 | 1989-03-03 | Solid-state electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1051541A JPH02230708A (en) | 1989-03-03 | 1989-03-03 | Solid-state electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02230708A true JPH02230708A (en) | 1990-09-13 |
Family
ID=12889886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1051541A Pending JPH02230708A (en) | 1989-03-03 | 1989-03-03 | Solid-state electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02230708A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012191178A (en) * | 2011-02-22 | 2012-10-04 | Sanyo Electric Co Ltd | Electrolytic capacitor and manufacturing method of the same |
| JPWO2021153749A1 (en) * | 2020-01-30 | 2021-08-05 |
-
1989
- 1989-03-03 JP JP1051541A patent/JPH02230708A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012191178A (en) * | 2011-02-22 | 2012-10-04 | Sanyo Electric Co Ltd | Electrolytic capacitor and manufacturing method of the same |
| JPWO2021153749A1 (en) * | 2020-01-30 | 2021-08-05 |
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