JPH02236154A - Preparation of small-sized oxygen electrode - Google Patents
Preparation of small-sized oxygen electrodeInfo
- Publication number
- JPH02236154A JPH02236154A JP1056902A JP5690289A JPH02236154A JP H02236154 A JPH02236154 A JP H02236154A JP 1056902 A JP1056902 A JP 1056902A JP 5690289 A JP5690289 A JP 5690289A JP H02236154 A JPH02236154 A JP H02236154A
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- JP
- Japan
- Prior art keywords
- oxygen electrode
- gel
- substrate
- small
- electrolyte
- Prior art date
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔概要〕
小型酸素電極の製法に関し、電解液含有ゲルを基板上の
穴に注入することが容易な方法を提供することを目的と
し、半導体基板上に異方性エッチングにより溝(穴)を
形成し、該基板の表面を覆う絶縁゜膜を形成し、該大の
底部から該基板の表面に至る2本の電極を該絶縁膜を介
して形成し、該大の内部に電解液含有多孔性物質を満た
し、該基板上に該電解液含有多孔性物質を覆うガス透過
性膜を形成する小型酸素電極の製造法において、該大の
内部への該電解液含有多孔性物質充填をスクリーン印刷
法によりなすことにより小型酸素電極の製造法を構成す
る.
〔産業上の利用分野〕
本発明は小型酸素電極の製法に関し、特に小型かつ低価
格で大量生産可能な酸素電極の製造方法に関する.
小型酸素電極は、いろいろな分野において、溶存酸素濃
度の測定に有利に用いることができる.例えば、水質保
全の見地から水中の生化学的酸素要求量(BOD)の測
定が行われているが、この溶存酸素濃度の測定器として
この小型酸素電極を使用することができる.また、醗酵
工業において、効率良くアルコール醗酵を進めるために
は醗酵槽中の溶存酸素濃度の調整が必要であり、この測
定器として本発明の小型酸素電極を使用することができ
る.さらにまた、小型酸素電極は、酵素と組み合わせて
酵素電極を形成し、糖やビタミンなどの濃度測定に用い
ることもできる.例えば、グルコースはグルコースオキ
シダーゼという酵素を触媒とし、溶存酸素と反応してグ
ルコノラクトンに酸化するが、これにより酸素電極セル
の中に拡散してくる溶存酸素が減ることを利用し、溶存
酸素の消費量からグルコース濃度を測定することができ
る.
このように本発明の小型酸素電極は、環境計測、醗酵工
業、臨床医療など各種の分野で使用することができるが
、特に臨床医療分野においてカテーテルに装着し、体内
に挿入する用途においては、小型であるとともに使い捨
て可能で低価格であるので、非常に利用価値がある.
〔従来の技術〕
本発明者らは、従来のガラス製の酸素電極では、小型化
ができず大量生産も不可能であるので、リソグラフィー
技術及び異方性エッチング技術を利用した新しいタイプ
の小型酸素電極を開発し、特許出願した(特開昭63−
238548号) この酸素電極は、シリコン基板上
に異方性エッチングにより形成した穴の上に、絶縁膜を
介して2本の電極を形成し、さらにこの穴の内部に電解
液含有体を収容し、穴の上面をガス透過性膜で覆った構
造を有する酸素電極である.この酸素電極は、小型で、
特性のばらつきが少な《、また一括大量生産ができるた
めに低コストである.
上記したタイプの酸素電極において、電解液含有体は通
常電解液をしみこませたゲル、たとえばアガロースゲル
であった.しかし、アガロースゲルの場合には、シリコ
ン基板上の微小な多くの穴の中にマイクロピペットで1
回ずつ繰り返し注入しなければならなかった.本発明者
らはこの点をさらに改良し、ゲルとしてポリアクリルア
ミドゲルまたはアルギン酸カルシウムゲルを用い、シリ
コン基板上の穴以外の部分を溌水性を有するネガ型レジ
ストで覆い、ゲルのモノマー溶液もしくは可溶型ゲルの
溶液に浸漬し、親水性と疎水性の差を利用して穴の部分
のみにゲルを形成する方法を開発した(特願昭62−1
48221号.特願昭63−176978号).
〔本発明が解決しようとする課題〕
上記した特願昭62−148221号,特願昭63−1
76978号に記載された方法は、非常に小型の酸素電
極を大量に生産できるという点で画期的な製造方法であ
る.しかし、この方法を詳細に検討してみると、実用化
にいたるために解決しなければならない問題があること
がわかった.ゲル溶液の注入はネガ型レジスト被覆部分
と未被覆部分との疎水性・親水性の差を利用し゜ている
.疎水性には問題ないが、親木性は未被覆部分の表面の
清浄さのみに依存している.このため、極僅かな汚れ、
特に微小な油の粒子等により汚染されると、疎水性部分
との差が少なくなり、異方性エッチングにより形成した
穴にゲル溶液が入り難かった.これは小型酸素電極の歩
留まりを低下させる要因となる.さらに、親水性と疎水
性との差が少なくなることにより、疎水性の部分へのゲ
ル溶液の付着も発生した.これは、ガス透過膜と酸素電
極本体の間にゲルがはさまることにより、ガス透過膜の
密着性を悪化させる要因となり、酸素電極の特性のばら
つき、ガス透過膜の剥離、あるいは絶縁性の低下による
ノイズの増大等が発生していた.これらの点は、酸素電
極の再現性・信頼性の点で大変不利である.
本発明の目的は、小型で大量生産可能な酸素電極を製造
するにあたって、製造時の歩留まりの向上と、測定時に
おける再現性,・信頼性の低下の問題を解決することで
ある.
〔課題を解決するための手段〕
本発明は、半導体基板上に異方性エッチングにより溝(
穴)を形成し、該基板の表面を覆う絶縁膜を形成し、該
大の底部から該基板の表面に至る2本の電極を該絶US
を介して形成し、該大の内部に電解液含有多孔性物質を
満たし、該基板上に該電解液含有多孔性物質を覆うガス
透過性膜を形成する小型酸素電極の製造法において、該
大の内部への該電解液含有多孔性物質充填をスクリーン
印刷法によりなす小型酸素電極の製造法により達成され
る.
上記電解液含有多孔性物質として、アルギン酸ゲル、ポ
リアクリルアミドゲルもしくはアガロースゲルを用いる
ことができる.
本発明者らは、ゲル溶液が穴の部分のみに入らない原因
が、穴の部分の親水性の不完全性にあることを見出した
.これを解決するためには、ゲル溶液を必要な部分のみ
に「置くJ方法をとることが有利である.しかし、アガ
ロースゲルの場合の様にマイクロピペットを使用する事
は、生産性および品質の均一性からも望ましくない.そ
こで本発明は、ゲル溶液の注入にスクリーン印刷を利用
することにより、前記の問題点を解決しようとするもの
である.
本発明によれば、親水性と疎水性の差がなくとも、必要
な部分のみにゲル溶液を注入できる.このことは、ゲル
の注入用に疎水性レジスト皮膜が必ずしも必要ではない
ことを示しており、製造工程の一部省略が可能である.
しかも、従来の方法ではゲル溶液は、水とほぼ同等の粘
度が必要であり、界面活性剤およびそれと同じ働きをす
る物質の含有は許されていなかった.しかし、本発明に
よりこれらの制限が大きく緩められ、高濃度のゲル溶液
または従来の方法では使用できなかった種類および組成
のゲルの使用も可能となる.〔実施例〕
本発明による小型酸素電極の製造法の一例を説明する.
第1図は、本発明による小型酸素電極の一例を示した斜
視図である.図示の酸素電極は直方体の形状を有してい
て、感応部がガス透過性膜7で覆われるとともに、付属
のデバイスに接続するため、電極3A、3Bの一部が露
出している.電極3A,3Bは、本例の場合、ポーラロ
型とするために両電極とも金電極で構成した.
第1図の小型酸素電極の構造を、そのI−1411に沿
った断面図である第2図に示す.シリコン基板1は、異
方性エッチングにより形成された溝(穴)を有するとと
もに、その全面にシリコン酸化I1l!2が絶縁膜とし
て被着せしめられている.さらに基板裏面は破れに《い
疎水性絶縁膜5で覆われている.シリコン基Filの穴
には、2本の金電極3Aおよび3Bが対をなして被着せ
しめられている.金電極3Aおよび3Bは、第1図で示
したように、それぞれの一部分が溝の外側にまで延在し
ている.また、シリコン基板lの穴には電解液含有ゲル
6が満たされている.さらに、穴の上部には、基板1の
上部の全面(第1図の露出部を除く)を覆う形で、ガス
透過性l!′7が被覆されておりこれは絶縁膜として側
面および裏面にも覆われている.
第1図および第2図に示した小型酸素電極は、例えば、
第3図に順を追って示す製造プロセスで脊利に製造する
ことができる.なお、以下の説明では、理解を容易なら
しめるため、1枚のウェハーに1個だけ酸素電極を形成
する場合について記載するけれども、実際には1枚のウ
ェハーに多数個の小型酸素電極が同時に形成されるとい
うことを理解されたい.
(1) ウエハー洗浄
250〜500 u■厚(100)面シリコンウェハー
1を用意し、これを過酸化水素とアンモニアの混合溶液
および鴻硝酸で良く洗浄した.
(2) S i O t IIの形成ウエハーをウエ
ット熱酸化し、その全面に0.5〜1μ■厚のSins
膜を形成した.
(3) エッチング用パターンの形成フォトレジスト
にて、ウエハー上にエッチング用パターンを形成した.
ウェハーの裏面にもフォトレジストを塗布し、ポストベ
ークを施した.(4) S i O t @のエッチ
ングフッ化水素酸・フッ化アンモニウム水溶液にウ?ハ
ーを浸漬し、露出部分のSingをエッチングにより除
去し、さらにレジストを除去した.(5) シリコン
の異方性エッチング水酸化カリウム水溶液中にてシリコ
ンの異方性エッチングを行い、200〜400 μ腫の
溝をmウた.異方性エッチングの完了後、エッチング時
に使用したSSOx膜を(4)の溶液で除去した.(6
) SiO震膜の形成
ウエハー表面にSiO■膜を成長させるため、(1)と
同様の洗浄工程に引き続きウェハーをウェット熱酸化し
、0.5〜1,us+厚のSing膜2を形成した.(
7) クロムおよび金薄膜の形成
金と基板間の密着性を良くするクロム薄膜(100〜5
00人)に引き続き、金薄膜( 3000 〜5000
人)を真空蒸着により形成した.
(8) 電極形成用パターンの形成
フォトレジストにて、ウエハー上に電極形成用レジスト
パターンを形成した.
(9》 金およびクロムのエッチング 第3図(A)
ウエハーを金用エッチング液およびクロム用エッチンダ
液にこの順に浸漬し、露出した金およびクロムの部分を
エッチングにより除去し、金電極3A、3Bを得た.さ
らに、レジストを除去した.OI 疎水化処理
ウエハー表面にフォトレジストを塗布しブリベータ後に
露光及び現像を行い、ウェハー表面の穴4以外のところ
をレジストで覆い、疎水性レジスト膜8を作製した.な
お、この工程は必ずしも必要ないが、ウエハー表面の疎
水化およびレジスト皮膜による段差によりゲル溶液の流
出防止の意味で行った.
01) 基板裏面に疎水性絶縁膜形成基板裏面にシリ
コーン樹脂等の疎水性絶縁膜5を一様に塗布し、指定の
温度( 1 5 0 ”C )で硬化させた.
0ク アルギン酸カルシウムゲルの充填(第3図(B)
)
電解液含有ゲルの形成用として、次のような2種類の溶
液を調製した.
A液: アルギン酸ナトリウムを0.1〜IMの塩化カ
リウム、塩化ナトリウム、硫酸ナトリウム等の水溶液中
に溶解したもの.アルギン酸ナトリウム濃度0.05〜
0.5%.
B液: 塩化カルシウムを上記の塩溶液(0.1〜IM
の塩化カリウム、塩化ナトリウム、硫酸ナトリウム等の
水溶液)中に溶解したもの.塩化カルシウム濃度1〜5
%.
ウエハーをスクリーン印刷機のステージ上に置き、穴の
部分のみを印刷するマスクを用い、A液をウエハー上に
印刷した.ウェハーを印刷機から取り出し、B液中に浸
漬するか、B液を噴霧するとA液は瞬時にゲル化した.
O湯 基板の切り出し
基板上に形成された酸素電極をチップ状に切り出した.
(ロ) ガス透過性膜の被覆(第3図(C))電解液含
有ゲル6上にそのゲルを覆うようにしてガス透過性膜7
を被覆した.ガス透過性膜として、疎水性のネガ型フォ
トレジスト、シリコン樹脂、フッ素樹脂等をディップコ
ーティングにより塗布した.レジストは露光して硬化さ
せた.ガス透過性膜および側壁用絶縁膜を完成させた。[Detailed Description of the Invention] [Summary] The purpose of the present invention is to provide a method for manufacturing a small oxygen electrode, in which an electrolyte-containing gel is easily injected into a hole on a substrate, and an anisotropic etching process is performed on a semiconductor substrate. to form a groove (hole), form an insulating film covering the surface of the substrate, form two electrodes from the bottom of the substrate to the surface of the substrate via the insulating film, and In a method for producing a small oxygen electrode, the inside of which is filled with an electrolyte-containing porous material, and a gas permeable membrane is formed on the substrate to cover the electrolyte-containing porous material, A method for manufacturing small oxygen electrodes is constructed by filling the oxygen electrode with a screen printing method. [Industrial Application Field] The present invention relates to a method for manufacturing a small-sized oxygen electrode, and particularly to a method for manufacturing an oxygen electrode that is small, inexpensive, and can be mass-produced. Small oxygen electrodes can be advantageously used to measure dissolved oxygen concentration in various fields. For example, biochemical oxygen demand (BOD) in water is measured from the standpoint of water quality conservation, and this small oxygen electrode can be used as a measuring device for dissolved oxygen concentration. Furthermore, in the fermentation industry, in order to efficiently proceed with alcohol fermentation, it is necessary to adjust the dissolved oxygen concentration in the fermenter, and the small oxygen electrode of the present invention can be used as a measuring device for this purpose. Furthermore, the small oxygen electrode can be combined with an enzyme to form an enzyme electrode, which can be used to measure the concentration of sugars, vitamins, etc. For example, glucose is oxidized to gluconolactone by reacting with dissolved oxygen using the enzyme glucose oxidase as a catalyst. Glucose concentration can be measured from the amount consumed. As described above, the small oxygen electrode of the present invention can be used in various fields such as environmental measurement, fermentation industry, and clinical medicine. It is also disposable and inexpensive, making it very useful. [Prior Art] Since conventional glass oxygen electrodes cannot be miniaturized and cannot be mass-produced, the present inventors developed a new type of small oxygen electrode using lithography technology and anisotropic etching technology. Developed an electrode and filed a patent application (Japanese Unexamined Patent Publication No. 1983-
(No. 238548) This oxygen electrode has two electrodes formed on a hole formed by anisotropic etching on a silicon substrate with an insulating film interposed therebetween, and an electrolyte-containing body is housed inside the hole. This is an oxygen electrode with a structure in which the top surface of the hole is covered with a gas-permeable membrane. This oxygen electrode is small and
There is little variation in characteristics, and it is low cost because it can be mass-produced at once. In the above-mentioned types of oxygen electrodes, the electrolyte-containing body is usually a gel impregnated with an electrolyte, such as an agarose gel. However, in the case of agarose gel, one micropipette is used to fill many tiny holes on a silicon substrate.
I had to inject it repeatedly. The present inventors have further improved this point, using polyacrylamide gel or calcium alginate gel as the gel, and covering the parts other than the holes on the silicon substrate with a water-repellent negative resist. We developed a method of forming a gel only in the holes by immersing it in a mold gel solution and utilizing the difference between hydrophilicity and hydrophobicity (Patent Application No. 1982-1).
No. 48221. (Patent Application No. 176978/1983). [Problems to be solved by the present invention] The above-mentioned Japanese Patent Application No. 148221/1982 and Japanese Patent Application No. 1983/1983
The method described in No. 76978 is an innovative manufacturing method in that it allows for mass production of extremely small oxygen electrodes. However, when this method was examined in detail, it was found that there were problems that needed to be resolved in order to put it into practical use. Injecting the gel solution takes advantage of the difference in hydrophobicity and hydrophilicity between the negative resist coated area and the uncoated area. There is no problem with hydrophobicity, but wood-philicity depends only on the cleanliness of the uncoated surface. For this reason, very slight dirt,
In particular, when contaminated with minute oil particles, etc., the difference between the hydrophobic part and the hydrophobic part decreased, making it difficult for the gel solution to enter the holes formed by anisotropic etching. This is a factor that reduces the yield of small oxygen electrodes. Furthermore, as the difference between hydrophilicity and hydrophobicity decreased, the gel solution also adhered to the hydrophobic areas. This is caused by the gel being caught between the gas permeable membrane and the oxygen electrode body, which deteriorates the adhesion of the gas permeable membrane, resulting in variations in the characteristics of the oxygen electrode, peeling of the gas permeable membrane, or a decrease in insulation. An increase in noise was occurring. These points are very disadvantageous in terms of reproducibility and reliability of the oxygen electrode. The purpose of the present invention is to improve the yield during manufacturing and solve the problem of decreased reproducibility and reliability during measurement when manufacturing oxygen electrodes that are small and can be mass-produced. [Means for Solving the Problems] The present invention provides grooves (
A hole) is formed, an insulating film is formed to cover the surface of the substrate, and two electrodes are connected from the bottom of the substrate to the surface of the substrate.
In a method for manufacturing a small oxygen electrode, the electrode is formed through a large electrode, the inside of the electrode is filled with an electrolyte-containing porous material, and a gas permeable membrane is formed on the substrate to cover the electrolyte-containing porous material. This is achieved by manufacturing a small oxygen electrode by filling the inside of the electrode with a porous material containing the electrolyte using a screen printing method. As the electrolyte-containing porous material, alginate gel, polyacrylamide gel, or agarose gel can be used. The present inventors have discovered that the reason why the gel solution does not enter only the holes is due to the incomplete hydrophilicity of the holes. In order to solve this problem, it is advantageous to apply the gel solution only to the necessary areas.However, using a micropipette as in the case of agarose gel is a problem in terms of productivity and quality. This is also undesirable from the viewpoint of uniformity.Therefore, the present invention attempts to solve the above problem by utilizing screen printing for injection of gel solution.According to the present invention, the hydrophilic and hydrophobic Even if there is no difference, the gel solution can be injected only to the necessary areas. This shows that a hydrophobic resist film is not necessarily necessary for gel injection, and it is possible to omit part of the manufacturing process. ..
Moreover, in the conventional method, the gel solution must have a viscosity almost equivalent to that of water, and the inclusion of surfactants and substances that perform the same function was not allowed. However, the present invention greatly relaxes these limitations and allows the use of highly concentrated gel solutions or gels of types and compositions that cannot be used with conventional methods. [Example] An example of a method for manufacturing a small oxygen electrode according to the present invention will be explained. FIG. 1 is a perspective view showing an example of a small oxygen electrode according to the present invention. The illustrated oxygen electrode has the shape of a rectangular parallelepiped, and the sensitive part is covered with a gas permeable membrane 7, and part of the electrodes 3A and 3B are exposed for connection to an attached device. In this example, the electrodes 3A and 3B were both made of gold electrodes in order to have a polaro type. The structure of the small oxygen electrode shown in FIG. 1 is shown in FIG. 2, which is a cross-sectional view taken along I-1411. The silicon substrate 1 has a groove (hole) formed by anisotropic etching, and silicon oxide I1l! is formed on the entire surface thereof. 2 is deposited as an insulating film. Furthermore, the back surface of the substrate is covered with a tear-resistant hydrophobic insulating film 5. Two gold electrodes 3A and 3B are deposited in pairs in the holes of the silicon-based Fil. As shown in FIG. 1, a portion of each of the gold electrodes 3A and 3B extends to the outside of the groove. Further, the hole in the silicon substrate l is filled with an electrolyte-containing gel 6. Furthermore, the upper part of the hole has a gas permeability l! which covers the entire upper part of the substrate 1 (excluding the exposed part in FIG. 1). '7 is coated, and this is also covered on the side and back surfaces as an insulating film. The small oxygen electrode shown in FIGS. 1 and 2 is, for example,
It can be manufactured conveniently using the manufacturing process shown step by step in Figure 3. In the following explanation, in order to make it easier to understand, we will describe the case where only one oxygen electrode is formed on one wafer, but in reality, many small oxygen electrodes are formed on one wafer at the same time. Please understand that this will be done. (1) Wafer cleaning A silicon wafer 1 with a thickness of 250 to 500 μm (100) was prepared and thoroughly cleaned with a mixed solution of hydrogen peroxide and ammonia and nitric acid. (2) Formation of SiOtII The wafer is wet thermally oxidized, and a 0.5 to 1μ thick Sins layer is deposited on the entire surface.
A film was formed. (3) Formation of etching pattern An etching pattern was formed on the wafer using photoresist.
Photoresist was also applied to the back side of the wafer and post-bake was performed. (4) S i O t @ etching Hydrofluoric acid/ammonium fluoride aqueous solution with u? The exposed portion of Sing was removed by etching, and the resist was further removed. (5) Anisotropic etching of silicon Anisotropic etching of silicon was performed in an aqueous solution of potassium hydroxide to form grooves of 200 to 400 μm. After the anisotropic etching was completed, the SSOx film used during etching was removed using the solution (4). (6
) Formation of SiO film In order to grow a SiO* film on the wafer surface, the wafer was subjected to wet thermal oxidation following the same cleaning process as in (1) to form a Sing film 2 with a thickness of 0.5 to 1 μs+. (
7) Formation of chromium and gold thin film Chromium thin film (100-5
00 people), followed by gold thin film (3000 ~ 5000 people)
(person) was formed by vacuum evaporation. (8) Formation of pattern for electrode formation A resist pattern for electrode formation was formed on the wafer using photoresist. (9) Etching of gold and chromium Figure 3 (A)
The wafer was immersed in an etching solution for gold and an etching solution for chromium in this order, and the exposed gold and chromium portions were removed by etching to obtain gold electrodes 3A and 3B. Furthermore, the resist was removed. A photoresist was applied to the surface of the OI hydrophobized wafer, exposed and developed after blebbing, and the resist was used to cover areas other than the holes 4 on the wafer surface to form a hydrophobic resist film 8. Although this step is not necessarily necessary, it was performed to make the wafer surface hydrophobic and to prevent the gel solution from flowing out due to the step created by the resist film. 01) Formation of a hydrophobic insulating film on the back side of the substrate A hydrophobic insulating film 5 made of silicone resin or the like was uniformly applied to the back side of the substrate and cured at a specified temperature (150"C). Filling (Figure 3 (B)
) The following two types of solutions were prepared for forming electrolyte-containing gels. Solution A: Sodium alginate dissolved in an aqueous solution of 0.1-IM potassium chloride, sodium chloride, sodium sulfate, etc. Sodium alginate concentration 0.05~
0.5%. Solution B: Add calcium chloride to the above salt solution (0.1 to IM
dissolved in an aqueous solution of potassium chloride, sodium chloride, sodium sulfate, etc.). Calcium chloride concentration 1-5
%. The wafer was placed on the stage of a screen printer, and using a mask that printed only the holes, liquid A was printed on the wafer. When the wafer was taken out of the printing press and immersed in or sprayed with liquid B, liquid A instantly gelled. Cutting out the O-water substrate The oxygen electrode formed on the substrate was cut into chips. (B) Covering the gas-permeable membrane (Fig. 3 (C)) The gas-permeable membrane 7 is coated on the electrolyte-containing gel 6 so as to cover the gel.
covered. Hydrophobic negative photoresist, silicone resin, fluororesin, etc. were applied as a gas permeable membrane by dip coating. The resist was exposed to light and cured. Completed gas permeable membrane and sidewall insulation membrane.
このガス透遇性膜は裏面にも形成されるが、これはより
絶縁性を向上させるのに有利に作用する。This gas-permeable film is also formed on the back surface, which has an advantageous effect in further improving insulation.
本発明の他の実施例として上記の工程の各部分を次のよ
うに変更したものを挙げる.
Oク゜ポリアルリルアミドゲルの充填(第3図(B電解
液含有ゲルの形成用として、0.1 −IMの塩化カリ
ウム、塩化ナトリウム、硫酸ナトリウム等の水溶液中に
0.5〜5%アクリルアミド、0〜5%メチレンビスア
クリルアミド、反応開始剤等を溶解したA′溶液を用意
する.
ウエハーをスクリーン印刷機のステージ上に置き、穴の
部分のみを印刷するマスクを用い、このA′溶液をウエ
ハー上に印刷した.ウェハーに紫外線を照射してゲル化
した.
021”アガロースゲルの充填(第3図(B))電解液
含有ゲルの形成用として、0.1 −LMの塩化カリウ
ム、塩化ナトリウム、硫酸ナトリウム等の水溶液中に0
.5〜2%アガロースを溶解したA″″溶液を用意する
.このA“溶液を100゜Cに加熱しアガロースを完全
に溶かした後、50〜60’Cに保温する.
ウエハーをスクリーン印刷機のステージ上に置き、穴の
部分のみを印刷するマスクを用い、このA″溶液液をウ
エハー上に印刷する.冷えればゲル化する.
なお、上記例で異方性エッチング可能な半導体基板とし
てシリコン基板を用いる例を上げたが、砒化ガリウム、
ゲルマニウム等の基板を用いても良い。As another example of the present invention, each part of the above steps is modified as follows. Filling of polyallylamide gel (Figure 3) (B) For the formation of electrolyte-containing gel, 0.5-5% acrylamide was added in an aqueous solution of 0.1-IM potassium chloride, sodium chloride, sodium sulfate, etc. , 0 to 5% methylene bisacrylamide, a reaction initiator, etc. are dissolved in A' solution. Place the wafer on the stage of a screen printing machine and use a mask that prints only the holes to print this A' solution. The wafer was printed on the wafer. The wafer was irradiated with ultraviolet light to form a gel. Filling of 021" agarose gel (Fig. 3 (B)) To form an electrolyte-containing gel, 0.1 -LM of potassium chloride, chloride 0 in aqueous solutions of sodium, sodium sulfate, etc.
.. Prepare solution A'' in which 5-2% agarose is dissolved. Heat this solution A to 100°C to completely dissolve the agarose, then keep it warm at 50-60°C. Place the wafer on the stage of a screen printer, and use a mask to print only the holes. Print this A″ solution onto a wafer. When it cools down, it turns into a gel. Although the above example uses a silicon substrate as a semiconductor substrate that can be anisotropically etched, gallium arsenide,
A substrate made of germanium or the like may also be used.
第1図は、本発明による小型酸素電極の一例を示した斜
視図、
第2図は、第1図の電極の線分1−1に沿った断面図、
第3図(A)〜(C)は、第1図および第2図に示した
小型酸素電極の製造プロセスの後半を順を追って示した
断面図である.
〔発明の効果〕
本発明によれば、基板上の親水性と疎水性の差に係わら
ず、電解液含有ゲルを注入することができるため、生産
の歩留まり向上、およびガス透過膜の密着性の向上によ
る、長期間の安定性、ノイズの低減等を達成できる.
3A
3B
第1図
第2図
1:シリコン基仮 5:疎水性垣鉾尉漠2:絶緑膜
6 : tif!含有ケル3A,38:電極
7:ガス透過膜4:六 8:疎水性レジ
スト膜tJ哩酸素電極の製造プロセス
第3図FIG. 1 is a perspective view showing an example of a small oxygen electrode according to the present invention, FIG. 2 is a sectional view taken along line 1-1 of the electrode in FIG. 1, and FIGS. ) are sectional views sequentially showing the latter half of the manufacturing process of the small oxygen electrode shown in FIGS. 1 and 2. [Effects of the Invention] According to the present invention, the electrolyte-containing gel can be injected regardless of the difference between hydrophilicity and hydrophobicity on the substrate, which improves production yield and improves the adhesion of the gas permeable membrane. Through this improvement, long-term stability and noise reduction can be achieved. 3A 3B Figure 1 Figure 2 Figure 1: Silicon base 5: Hydrophobic barrier 2: Green film
6: tif! Containing Kel 3A, 38: Electrode
7: Gas permeable membrane 4: Six 8: Hydrophobic resist film tJ 哚 Oxygen electrode manufacturing process Figure 3
Claims (1)
形成し、該基板の表面を覆う絶縁膜を形成し、該穴の底
部から該基板の表面に至る2本の電極を該絶縁膜を介し
て形成し、該穴の内部に電解液含有多孔性物質を満たし
、該基板上に該電解液含有多孔性物質を覆うガス透過性
膜を形成する小型酸素電極の製造法において、該穴の内
部への該電解液含有多孔性物質充填をスクリーン印刷法
によりなすことを特徴とする小型酸素電極の製造法。1. Form a groove (hole) on a semiconductor substrate by anisotropic etching, form an insulating film covering the surface of the substrate, and connect two electrodes from the bottom of the hole to the surface of the substrate through the insulating film. In a method for producing a small oxygen electrode, the hole is formed through a hole, the inside of the hole is filled with an electrolyte-containing porous material, and a gas permeable membrane is formed on the substrate to cover the electrolyte-containing porous material. 1. A method for manufacturing a small-sized oxygen electrode, characterized in that the electrolyte-containing porous material is filled into the inside of the electrode by a screen printing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1056902A JPH02236154A (en) | 1989-03-09 | 1989-03-09 | Preparation of small-sized oxygen electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1056902A JPH02236154A (en) | 1989-03-09 | 1989-03-09 | Preparation of small-sized oxygen electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02236154A true JPH02236154A (en) | 1990-09-19 |
Family
ID=13040384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1056902A Pending JPH02236154A (en) | 1989-03-09 | 1989-03-09 | Preparation of small-sized oxygen electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02236154A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5281323A (en) * | 1991-03-20 | 1994-01-25 | Fujitsu Limited | Electrolyte composition for screen printing and miniaturized oxygen electrode and production process thereof |
| US5326450A (en) * | 1991-03-20 | 1994-07-05 | Fujitsu Limited | Miniaturized oxygen electrode |
| US5492611A (en) * | 1991-03-20 | 1996-02-20 | Fujitsu Limited | Miniaturized oxygen electrode |
| US5573649A (en) * | 1991-03-20 | 1996-11-12 | Fujitsu Limited | Miniaturized oxygen electrode and process of producing same |
| CN111205102A (en) * | 2020-01-20 | 2020-05-29 | 广东施彩新材料科技有限公司 | Porous painted pottery micro-bead based on ceramic waste and preparation method thereof |
-
1989
- 1989-03-09 JP JP1056902A patent/JPH02236154A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5281323A (en) * | 1991-03-20 | 1994-01-25 | Fujitsu Limited | Electrolyte composition for screen printing and miniaturized oxygen electrode and production process thereof |
| US5326450A (en) * | 1991-03-20 | 1994-07-05 | Fujitsu Limited | Miniaturized oxygen electrode |
| US5468408A (en) * | 1991-03-20 | 1995-11-21 | Fujitsu Limited | Electrolyte composition for screen printing and miniaturized oxygen electrode and production process thereof |
| US5478460A (en) * | 1991-03-20 | 1995-12-26 | Fujitsu Limited | Electrolyte composition for screen printing and miniaturized oxygen electrode and production process thereof |
| US5492611A (en) * | 1991-03-20 | 1996-02-20 | Fujitsu Limited | Miniaturized oxygen electrode |
| US5573649A (en) * | 1991-03-20 | 1996-11-12 | Fujitsu Limited | Miniaturized oxygen electrode and process of producing same |
| CN111205102A (en) * | 2020-01-20 | 2020-05-29 | 广东施彩新材料科技有限公司 | Porous painted pottery micro-bead based on ceramic waste and preparation method thereof |
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