JPH0223678A - Magnetoresistance effect element - Google Patents
Magnetoresistance effect elementInfo
- Publication number
- JPH0223678A JPH0223678A JP63174739A JP17473988A JPH0223678A JP H0223678 A JPH0223678 A JP H0223678A JP 63174739 A JP63174739 A JP 63174739A JP 17473988 A JP17473988 A JP 17473988A JP H0223678 A JPH0223678 A JP H0223678A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ferromagnetic
- layer
- metal thin
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims description 5
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 11
- 230000005291 magnetic effect Effects 0.000 abstract description 26
- 229910045601 alloy Inorganic materials 0.000 abstract description 13
- 239000000956 alloy Substances 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 11
- 229910000889 permalloy Inorganic materials 0.000 abstract description 9
- 239000000654 additive Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 3
- 229910020630 Co Ni Inorganic materials 0.000 abstract description 2
- 229910002440 Co–Ni Inorganic materials 0.000 abstract description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 2
- 229910034327 TiC Inorganic materials 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910003266 NiCo Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 101100345589 Mus musculus Mical1 gene Proteins 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は磁気抵抗効果を利用した磁界センサに係わり、
特に磁界検出用センサ、磁気ヘッドに好適な磁気抵抗効
果型素子に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a magnetic field sensor using magnetoresistive effect,
In particular, the present invention relates to a magnetoresistive element suitable for magnetic field detection sensors and magnetic heads.
（従来の技術）
周知のように、磁気抵抗効果を利用した磁気抵抗効果型
素子は高感度で比較的大きな出力が得られるため、磁界
センサ、磁気ヘッドとして広く利用されている。このよ
うな磁界センサ、磁気ヘッドにおいては感度を高めるた
め及び線形応答に近づけるためにバイアスとして直流磁
界を印加している。従来、磁気抵抗効果型素子には２％
程度の磁気抵抗変化率を示し、膜の磁化のし易さの目安
となる異方性磁界が５０ｅ程度と小さくバイアスがかか
り易いパーマロイ合金薄膜が広く用いられている。(Prior Art) As is well known, magnetoresistive elements that utilize magnetoresistive effects have high sensitivity and can provide a relatively large output, and are therefore widely used as magnetic field sensors and magnetic heads. In such magnetic field sensors and magnetic heads, a DC magnetic field is applied as a bias in order to increase the sensitivity and approximate linear response. Conventionally, 2% for magnetoresistive elements
Permalloy alloy thin films are widely used because they exhibit a magnetoresistance change rate of about 100 µm and have a small anisotropic magnetic field of about 50 e, which is a measure of the ease of magnetization of the film, and are easily biased.
（発明が解決しようとする課題）
しかし、パーマロイ合金薄膜の磁気抵抗変化率は微弱な
磁界を測定するためには充分ではなく、磁界センサ、磁
気ヘッドの感度を高めるためにはさらに磁気抵抗変化率
の大きい材料が必要である。このような材料に一つとし
て、ＮｉＣｏ合金薄膜は４％程度の大きな磁気抵抗変化
率を示しくフジツウサイエンスアンドテクニカルジャー
ナル、ＦｕｊｉｔｕＳｃｉｅｎｃｅ ａｎｄ Ｔｅｃｈ
ｎｉｃａｌ Ｊｏｕｒｎａｌ 、 １９７４年、１２３
ページ）注目されている。しかしながら、ＮｉＣｏ合金
薄膜の異方性磁界は２００ｅ以上とパーマロイに比べて
大きいため、直流バイアス磁界がかかりにくいという問
題点があった。(Problem to be solved by the invention) However, the rate of change in magnetoresistance of the permalloy alloy thin film is not sufficient to measure weak magnetic fields, and the rate of change in magnetoresistance of the permalloy alloy thin film is not sufficient to measure weak magnetic fields. A large amount of material is required. One such material is NiCo alloy thin film, which exhibits a large magnetoresistance change rate of about 4%. Fujitsu Science and Technical Journal, Fujitsu Science and Tech
nical Journal, 1974, 123
page) is attracting attention. However, since the anisotropic magnetic field of the NiCo alloy thin film is 200 e or more, which is larger than that of permalloy, there is a problem in that it is difficult to apply a direct current bias magnetic field.
本発明の目的は上記従来技術の欠点をなくし、磁気抵抗
変化率が太きくしかも異方性磁界の小さい、高感度な磁
気抵抗変化型素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art described above, and to provide a highly sensitive variable magnetoresistive element that has a large magnetoresistive rate and a small anisotropic magnetic field.
（課題を解決するための手段）
上記問題点を解決するために、本発明では非磁性基板上
にＣｏまたはＣｏを主成分とする第１の強磁性金属薄膜
とＮｉまたはＮｉを主成分とする第２の強磁性金属薄膜
とを交互に積層した多層膜を用る。この時、第１の強磁
性金属薄膜と第２の強磁性金属薄膜との積層周期が５０
Å以下とすると特に良好な特性が得られる。(Means for Solving the Problems) In order to solve the above problems, in the present invention, a first ferromagnetic metal thin film mainly composed of Co or Co and a first ferromagnetic metal thin film mainly composed of Co or Ni are formed on a non-magnetic substrate. A multilayer film in which second ferromagnetic metal thin films and second ferromagnetic metal thin films are alternately laminated is used. At this time, the stacking period of the first ferromagnetic metal thin film and the second ferromagnetic metal thin film is 50.
Particularly good characteristics can be obtained when the thickness is Å or less.
以下、図面を参照して本発明をさらに詳細に説明する。Hereinafter, the present invention will be explained in more detail with reference to the drawings.
第１図は本発明の磁気抵抗効果素子の一例を示す部分断
面構造図である。非磁性基板１と、その上に交互に積層
されたＣｏまたはＣｏを主成分とする強磁性層２とＮｉ
またはＮｉを主成分とする強磁性層３との多層構造体を
含む。第１図では基板上にまずＣｏ層を形成し、次にＮ
ｉ層を形成し最後の層もＮｉ層で終わるように記しであ
るが、本発明の磁気抵抗変化型素子の特性はこれらの層
の積層順序には依らない。FIG. 1 is a partial cross-sectional structural diagram showing an example of the magnetoresistive element of the present invention. A non-magnetic substrate 1, ferromagnetic layers 2 consisting mainly of Co or Co and Ni which are alternately laminated on the non-magnetic substrate 1.
Alternatively, it includes a multilayer structure including a ferromagnetic layer 3 mainly composed of Ni. In FIG. 1, a Co layer is first formed on the substrate, and then a N layer is formed on the substrate.
Although the description is such that the i-layer is formed and the last layer ends with the Ni layer, the characteristics of the variable magnetoresistive element of the present invention do not depend on the lamination order of these layers.
本発明に係わる非磁性基板１の材料にはガラス、Ｓｉ、
Ａｌ２Ｏ３、ＴＩＣ，ＳＩＣ，Ａｌ２Ｏ３とＴｉＣとの
焼結体、フェライト等を用いることが出来、また第１の
強磁性層２にはＣｏまたはＣｏ−Ｆｅ、 Ｃｏ−Ｎｉ等
の強磁性合金、あるいはこれらに添加物を加えたものを
用いることが出来る。また、本発明に係わる第２の強磁
性層３の材料としてはＮｉまたはＮｉ−Ｆｅ、 Ｎｉ−
Ｃｏ等の強磁性合金、あるいはこれらに添加物を加えた
ものを用いることが出来る。The materials of the non-magnetic substrate 1 according to the present invention include glass, Si,
Al2O3, TIC, SIC, a sintered body of Al2O3 and TiC, ferrite, etc. can be used, and the first ferromagnetic layer 2 can be made of Co or a ferromagnetic alloy such as Co-Fe or Co-Ni, or a ferromagnetic alloy thereof. It is possible to use a mixture containing additives. Further, as the material of the second ferromagnetic layer 3 according to the present invention, Ni, Ni-Fe, Ni-
A ferromagnetic alloy such as Co or a mixture thereof with additives can be used.
上記の第１の強磁性材料と第２の強磁性材料とを２基の
蒸発源を持つ真空蒸着装置、もしくは２基のターゲット
を持つスパッタリング装置で蒸発させ、２基の蒸発源の
シャッターを交互に開閉したり、あるいは基板を２基の
蒸発源上を交互に通過させることによって、基板上に２
種類の材料を交互に積層させることが出来る。The first ferromagnetic material and the second ferromagnetic material are evaporated using a vacuum evaporation device with two evaporation sources or a sputtering device with two targets, and the shutters of the two evaporation sources are alternately operated. two evaporation sources on the substrate, or by passing the substrate alternately over two evaporation sources.
Different types of materials can be layered alternately.
（実施例） 以下に本発明の詳細を実施例により説明する。(Example) The details of the present invention will be explained below using examples.
２基のターゲットを用いたＡｒガス中でのｒｆマグネト
ロンスパッタリングにより、２００°Ｃに保持したサフ
ァイア基板上にＣｏ層とＮｉ層とを交互に連続的に積層
した多層膜を作成した。この時Ｃｏ層とＮｉ層との厚さ
は等しく、成膜速度はＣｏ、 Ｎｉ共に１人１秒であっ
た。また、スパッタ電力は１．３Ｗ／ｃｍ２）スパッタ
圧力は５×１Ｏ−３Ｔｏｒｒであった。同一条件下でシ
ャッターの開閉時間だけを変えて、第１表に示すように
積層周期を１０人から１０００人まで変化させた試料１
〜７を成膜した。ここで、膜全体の厚さは全て第１表
次に試料１〜７と同一成膜条件で、Ｆｅ２Ｏ重量％、Ｎ
ｉ８０重量％の合金をターゲットとして厚さ１０００人
のパーマロイ合金薄膜試料８を成膜した。A multilayer film in which Co layers and Ni layers were alternately and continuously laminated on a sapphire substrate maintained at 200°C was created by RF magnetron sputtering in Ar gas using two targets. At this time, the thickness of the Co layer and the Ni layer were equal, and the film forming speed was 1 second per person for both Co and Ni layers. The sputtering power was 1.3 W/cm2) and the sputtering pressure was 5 x 10-3 Torr. Sample 1 in which the stacking period was varied from 10 to 1000 people as shown in Table 1 by changing only the opening and closing time of the shutter under the same conditions.
~7 was deposited. Here, the thickness of the entire film is shown in Table 1.Then, under the same film forming conditions as Samples 1 to 7, Fe2O weight %, N
A Permalloy alloy thin film sample 8 having a thickness of 1000 layers was formed using an alloy containing 80% i by weight as a target.
これらの試料の磁気抵抗変化率を１ｋＯｅの回転磁場中
での４端子法によって測定した。また、異方性磁界は試
料振動型磁力計で測定した膜面内でのＢ−Ｈヒステリシ
スループから求めた。第２図に結果をまとめた。The rate of change in magnetoresistance of these samples was measured by a four-terminal method in a rotating magnetic field of 1 kOe. Further, the anisotropic magnetic field was determined from the B-H hysteresis loop within the film plane measured with a sample vibrating magnetometer. Figure 2 summarizes the results.
第２図から明かなように、Ｃｏ層とＮｉ層とを交互に積
層した多層膜においては、特に積層周期５０人以“下の
範囲において、従来材料であるパーマロイ合金薄膜の２
倍以上の磁気抵抗変化率が得られ、しかも異方性磁界は
パーマロイ合金薄膜と同等の小さな値となっている。な
お強磁性層としてＣｏ、 Ｎｉ以外に前記他の材料を用
いても第２図に示すような特性が得られた。As is clear from Fig. 2, in a multilayer film in which Co layers and Ni layers are alternately laminated, especially when the lamination period is 50 or less, the permalloy thin film, which is a conventional material,
The rate of change in magnetoresistance is more than twice as high, and the anisotropic magnetic field is as small as that of a permalloy alloy thin film. Note that even when other materials than Co and Ni were used for the ferromagnetic layer, the characteristics shown in FIG. 2 were obtained.
（発明の効果）
本発明は磁気抵抗効果型素子において、非磁性基板上に
ＣｏまたはＣｏを主成分とする第１の強磁性金属薄膜と
ＮｉまたはＮｉを主成分とする第２の強磁性金属薄膜と
を交互に積層した多層膜構造を利用することによって、
磁気抵抗変化率が太きくしかも異方性磁界の小さい、高
感度な磁気抵抗変化型素子が得られることを初めて見出
したものであり、実用上非常に有意義なものである。(Effects of the Invention) The present invention provides a magnetoresistive element in which a first ferromagnetic metal thin film mainly composed of Co or Co and a second ferromagnetic metal thin film mainly composed of Ni or Ni are formed on a nonmagnetic substrate. By using a multilayer film structure in which thin films are laminated alternately,
This is the first discovery that a highly sensitive variable magnetoresistive element with a large magnetoresistive rate and a small anisotropic magnetic field can be obtained, and is of great practical significance.
第１図は本発明の磁気抵抗効果型素子の構造を示す部分
断面図である。
第２図は試料１〜７の磁気抵抗変化率と異方性磁界の積
層周期依存性を示す図である。
１・・・非磁性基板、２．・、第１の強磁性層、３・・
・第２の強磁性層。FIG. 1 is a partial sectional view showing the structure of the magnetoresistive element of the present invention. FIG. 2 is a diagram showing the dependence of the magnetoresistance change rate and the anisotropic magnetic field on the stacking period of Samples 1 to 7. 1...Nonmagnetic substrate, 2. , first ferromagnetic layer, 3...
-Second ferromagnetic layer.
Claims (2)
１の強磁性金属薄膜と、ＮｉまたはＮｉを主成分とする
第２の強磁性金属薄膜とを交互に積層した多層膜からな
ることを特徴とする磁気抵抗効果型素子。(1) Consists of a multilayer film in which Co or a first ferromagnetic metal thin film containing Co as a main component and a second ferromagnetic metal thin film containing Ni or Ni as a main component are alternately laminated on a nonmagnetic substrate. A magnetoresistive element characterized by:
において、第１の強磁性金属薄膜と第２の強磁性金属薄
膜との積層周期が５０Å以下であることを特徴とする磁
気抵抗効果型素子。(2) The magnetoresistive element according to claim 1, characterized in that the stacking period of the first ferromagnetic metal thin film and the second ferromagnetic metal thin film is 50 Å or less. Effect type element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174739A JPH0223678A (en) | 1988-07-12 | 1988-07-12 | Magnetoresistance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174739A JPH0223678A (en) | 1988-07-12 | 1988-07-12 | Magnetoresistance effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0223678A true JPH0223678A (en) | 1990-01-25 |
Family
ID=15983827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63174739A Pending JPH0223678A (en) | 1988-07-12 | 1988-07-12 | Magnetoresistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0223678A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991018424A1 (en) * | 1990-05-21 | 1991-11-28 | Ube Industries, Ltd. | Magnetoresistance effect element |
| US5598308A (en) * | 1991-08-26 | 1997-01-28 | International Business Machines Corporation | Magnetoresistive sensor having multilayer thin film structure |
| JP2011249812A (en) * | 2010-05-28 | 2011-12-08 | Headway Technologies Inc | Microwave assisted magnetic recording structure, magnetic random access memory structure, hard-bias structure, perpendicular magnetic medium and method for manufacturing magnetic device |
| WO2014091874A1 (en) * | 2012-12-14 | 2014-06-19 | 日本電気株式会社 | Magnetic material and method for producing same |
-
1988
- 1988-07-12 JP JP63174739A patent/JPH0223678A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991018424A1 (en) * | 1990-05-21 | 1991-11-28 | Ube Industries, Ltd. | Magnetoresistance effect element |
| US5598308A (en) * | 1991-08-26 | 1997-01-28 | International Business Machines Corporation | Magnetoresistive sensor having multilayer thin film structure |
| JP2011249812A (en) * | 2010-05-28 | 2011-12-08 | Headway Technologies Inc | Microwave assisted magnetic recording structure, magnetic random access memory structure, hard-bias structure, perpendicular magnetic medium and method for manufacturing magnetic device |
| WO2014091874A1 (en) * | 2012-12-14 | 2014-06-19 | 日本電気株式会社 | Magnetic material and method for producing same |
| JPWO2014091874A1 (en) * | 2012-12-14 | 2017-01-05 | 日本電気株式会社 | Magnetic material and manufacturing method thereof |
| US10706996B2 (en) | 2012-12-14 | 2020-07-07 | Tohoku University | Magnetic material and method of manufacturing the same |
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