JPH0223680A - Manufacture of magnetoresistance effect thin film - Google Patents
Manufacture of magnetoresistance effect thin filmInfo
- Publication number
- JPH0223680A JPH0223680A JP63174742A JP17474288A JPH0223680A JP H0223680 A JPH0223680 A JP H0223680A JP 63174742 A JP63174742 A JP 63174742A JP 17474288 A JP17474288 A JP 17474288A JP H0223680 A JPH0223680 A JP H0223680A
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- JP
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- Prior art keywords
- film
- magnetic field
- ratio
- thin film
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 230000000694 effects Effects 0.000 title abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 5
- 230000005291 magnetic effect Effects 0.000 abstract description 52
- 239000010408 film Substances 0.000 abstract description 48
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 10
- 229910045601 alloy Inorganic materials 0.000 abstract description 8
- 239000000956 alloy Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 229910003266 NiCo Inorganic materials 0.000 abstract description 4
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 238000001514 detection method Methods 0.000 description 6
- 230000007847 structural defect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- TUBQDCKAWGHZPF-UHFFFAOYSA-N 1,3-benzothiazol-2-ylsulfanylmethyl thiocyanate Chemical compound C1=CC=C2SC(SCSC#N)=NC2=C1 TUBQDCKAWGHZPF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は強磁性磁気抵抗効果（以下、ＭＲ効果と略す）
を利用して磁界を検出する磁気抵抗効果素子（以下、Ｍ
Ｒ素子と略す）に用いる強磁性磁気抵抗効果薄膜（以下
、ＭＲ膜と略す）に関するものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to the ferromagnetic magnetoresistive effect (hereinafter abbreviated as MR effect).
A magnetoresistive element (hereinafter referred to as M
The present invention relates to a ferromagnetic magnetoresistive thin film (hereinafter abbreviated as MR film) used in an R element (abbreviated as R element).
（従来の技術）
周知の如＜、ＭＲ効果を用いて磁界を検出するＭＲ素子
は、磁気センサー、磁気ヘッド、回転検出素子、位置検
出素子などとして、現在盛んに用いられている。このＭ
Ｒ素子の主要部分であるＭＲ膜には、ＮｉＦｅまたはＮ
ｉＣｏ合金薄膜が広く用いられてきた。特に、Ｎ ｔ
Ｆ ｅは、異方性磁界が４０ｃ程度と小さく、非常に良
好な軟磁気特性を示すため、外部からの印加磁界に対す
る磁化の応答が良く、例えば、ＭＲ効果を用いて微弱な
信号磁界を読み出すＭＲヘッドには最適であるとされて
きた。(Prior Art) As is well known, MR elements that detect magnetic fields using the MR effect are currently widely used as magnetic sensors, magnetic heads, rotation detection elements, position detection elements, and the like. This M
The MR film, which is the main part of the R element, is made of NiFe or N.
iCo alloy thin films have been widely used. In particular, N t
Fe has a small anisotropic magnetic field of about 40c and exhibits very good soft magnetic properties, so the magnetization response to an externally applied magnetic field is good, and for example, a weak signal magnetic field can be read out using the MR effect. It has been considered optimal for MR heads.
（発明が解決しようとする課題）
ところで、現在、ＭＲ素子の高感度・高出力化が重要な
課題となっている。特に磁気記録の分野ニオいて、記録
密度の向上のためには、ＭＲヘッドの磁界感度を高め、
再生出方を大きくすることが急務である。このためには
、ＭＲ膜において、より大きなＭＲ比Δρ／ρ（最大比
抵抗変化量Δρと比抵抗の平均値の比）と良好な軟磁気
特性が必要とされる。特に、ＭＲヘッドにおいては、磁
界に対する線形応答性が必要とされるため、バイアス磁
界をＭＲ膜に印加するが、その際、バイアスのかかり易
さの点がら、ＭＲ膜の異方性磁界は約１００ｅ以下であ
ることが望ましい。(Problems to be Solved by the Invention) Currently, increasing the sensitivity and output of MR elements has become an important issue. Particularly in the field of magnetic recording, in order to improve recording density, it is necessary to increase the magnetic field sensitivity of the MR head.
There is an urgent need to increase the amount of playback. For this purpose, the MR film requires a larger MR ratio Δρ/ρ (ratio of the maximum specific resistance change Δρ to the average value of specific resistance) and good soft magnetic properties. In particular, in an MR head, linear response to a magnetic field is required, so a bias magnetic field is applied to the MR film, but in this case, due to the ease with which the bias is applied, the anisotropic magnetic field of the MR film is approximately It is desirable that it is 100e or less.
従来のＭＲ膜であるＮｉＦｅよりも大きなΔρ／ρを持
つ系としてはＮｉＣｏが知られている（フジツウ サイ
エンス アンド テクニカル ジャーナル、１９７４年
、１２３ページ）が、磁気異方性が強く（異方性磁界〜
２ｏｏｅ）、軟磁気特性がＮｉＦｅに較べてがなり劣っ
ているため、高感度・高出力のＭＲ材料としては利用で
きないという問題点があった。NiCo is known as a system with a larger Δρ/ρ than the conventional MR film NiFe (Fujitsu Science and Technical Journal, 1974, p. 123), but it has strong magnetic anisotropy (anisotropic magnetic field ~
2oooe), its soft magnetic properties are inferior to that of NiFe, so there was a problem that it could not be used as a high-sensitivity, high-output MR material.
本発明は、以上の点に鑑み、ＮｉＦｅよりも大きなＭＲ
比を持ち、しかも異方性磁界の値が小さく良好な軟磁気
特性を示し、高感度・高出力のＭＲ素子に適するＭＲ材
料を提供しようとするものである。In view of the above-mentioned points, the present invention provides a material with a larger MR than NiFe.
The present invention aims to provide an MR material that has a high magnetic field ratio, has a small anisotropic magnetic field value, exhibits good soft magnetic properties, and is suitable for a high-sensitivity, high-output MR element.
（課題を解決するための手段）
本発明のＭＲ膜においては、Ｎｉ１Ｆｅ１ｃＯを主成分
としＮ Ｎ ｒの組成比が８０重量％以上８３重量％以
下であり、しかもＣｏの組成比が６重量％以上９重量％
以下であることを特徴としている。(Means for Solving the Problems) The MR film of the present invention contains Ni1Fe1cO as the main component, the composition ratio of N N r is 80% by weight or more and 83% by weight or less, and the composition ratio of Co is 6% by weight or more. 9% by weight
It is characterized by the following:
また本発明のＭＲ膜の製造方法においては、ＮｌＮＦｅ
ＮＣｏを主成分とするＭＲ膜の作製時に、２００℃以上
４００℃以下の熱処理を行うことを特徴としている。Furthermore, in the method for manufacturing an MR film of the present invention, NlNFe
The method is characterized in that heat treatment is performed at a temperature of 200° C. or more and 400° C. or less when producing an MR film containing NCo as a main component.
（作用）
本発明において、Ｎｉ１Ｆｅ、Ｃｏを主成分とする合金
膜を採用し、組成範囲を上記の如く限定した理由、およ
びＭＲ膜に熱処理を施すことを指定した理由について述
べる。(Function) In the present invention, the reason why an alloy film containing Ni1Fe and Co as main components is adopted and the composition range is limited as described above, and the reason why the MR film is specified to be subjected to heat treatment will be described.
ＭＲ材料として用いられるＮ１Ｆｅ（Ｎｉ：８０〜８３
重量％）合金は、比較的大きなＭＲ比と、低磁歪および
良好な軟磁気特性を有している。一方Ｎ Ｎ ｔとＣＯ
が同様の組成比を持っＮｉＣ０合金は、非常に大きなＭ
Ｒ比を示すが、軟磁気特性はＮｉＦｅに較べてかなり劣
っている。それ故、Ｎｉｓ Ｆｅ１Ｃｏを主成分とし、
Ｎ １の組成比が８０〜８３重量％である合金薄膜にお
いては、ｃｏ７ｊ１度を選択することによって、Ｎ Ｉ
Ｆ ｅの持つ良好な軟磁気特性を保ちつつ、ＮｉＣ０
の持つ大きなＭＲ比を実現する可能性が考えられる。N1Fe (Ni: 80-83
wt%) alloy has a relatively large MR ratio, low magnetostriction and good soft magnetic properties. On the other hand, N N t and CO
NiC0 alloys with similar composition ratios have very large M
Although it exhibits a high R ratio, its soft magnetic properties are considerably inferior to that of NiFe. Therefore, with Nis Fe1Co as the main component,
In an alloy thin film in which the composition ratio of N1 is 80 to 83% by weight, by selecting co7j1 degree, the N1
While maintaining the good soft magnetic properties of Fe, NiC0
It is possible to realize the large MR ratio of
第１図に、この三元合金膜におけるＣ ｏ ９１１度と
ＭＲ比Δρ／ρとの関係を示す。各ＣＯ濃度の膜におい
て、熱処理後のΔρ／ρ（○）は、熱処理前のΔρ／ρ
（・）よりも大きくなっている。また、熱処理後の膜に
おいては、ｃｏ濃度が６重量％以上では、Δρ／ρはほ
とんど変化しないことがわかる。なお、熱処理温度に関
しては２００℃から４００℃の間で、はとんど同じ処理
効果が得られる。一般に蒸着直後の膜においては、多分
に含まれる構造欠陥によって、ＭＲ比の値は、本来膜が
持っている値よりも小さくなっているが、アニールする
ことによって構造欠陥が解消し、本来の値に戻ると考え
られている。よって、Ｃｏ 濃度、が６重量％以上の膜
では、本来のＭＲ比には、はとんど差がみられないと結
論できる。FIG. 1 shows the relationship between C o 911 degrees and the MR ratio Δρ/ρ in this ternary alloy film. For the film with each CO concentration, Δρ/ρ (○) after heat treatment is equal to Δρ/ρ before heat treatment.
It is larger than (・). Furthermore, it can be seen that in the film after heat treatment, Δρ/ρ hardly changes when the co concentration is 6% by weight or more. Regarding the heat treatment temperature, almost the same treatment effect can be obtained between 200°C and 400°C. Generally, in a film immediately after deposition, the MR ratio value is smaller than the original value of the film due to many structural defects contained in it, but by annealing, the structural defects are eliminated and the MR ratio is returned to the original value. It is believed that it will return to Therefore, it can be concluded that in films with a Co concentration of 6% by weight or more, there is almost no difference in the original MR ratio.
次に、第２図に、ｃｏ濃度と異方性磁界との関係を示す
。異方性磁界はＣＯ濃度の増加とともに増大する。特に
、ｃｏ濃度が９重量％あたりで増加の割合が大きくなっ
ており、それ以上のＣｏ１１４度の膜においては、異方
性磁界はＮ ｉ Ｆ’ ｅの３倍以上の大きな値となっ
ており、ＭＲ材料には適さないことがわかる。なお、異
方性磁界の値は熱処理によって変化せず、熱処理は磁気
異方性に悪影響を及ぼさないことがわかる。Next, FIG. 2 shows the relationship between co concentration and anisotropic magnetic field. The anisotropy field increases with increasing CO concentration. In particular, the rate of increase becomes large when the Co concentration is around 9% by weight, and in films with a Co of 114 degrees higher than that, the anisotropic magnetic field becomes a large value, more than three times that of N i F' e. , it can be seen that it is not suitable for MR materials. Note that the value of the anisotropic magnetic field does not change due to the heat treatment, indicating that the heat treatment does not adversely affect the magnetic anisotropy.
以上の実験事実から、Ｎｉ１Ｆｅ１Ｃｏを主成分とし、
Ｎｉの組成比が８０重量％以上８３重量％以下の合金薄
膜において、ｃｏ濃度を６重量％以上８重量％以下とす
ることによって、ＮｉＣ０と同程度の大きなＭＲ比を持
ち、しかも異方性磁界の値がＮｉＦｅと同程度であって
良好な軟磁気特性を示し、高感度・高出力のＭＲ素子に
適するＭＲ材料を得ることがきる。また、成膜直後の、
多くの構造欠陥を含むＭＲ膜に熱処理を施すことによっ
て、異方性磁界の値に悪影響を及ぼすことなく、膜本来
のＭＲ比を得ることができる。From the above experimental facts, with Ni1Fe1Co as the main component,
By setting the Co concentration to 6% to 8% by weight in an alloy thin film with a Ni composition ratio of 80% to 83% by weight, it has a large MR ratio comparable to that of NiC0, and an anisotropic magnetic field. It is possible to obtain an MR material whose value is comparable to that of NiFe, exhibits good soft magnetic properties, and is suitable for high-sensitivity, high-output MR elements. In addition, immediately after film formation,
By subjecting an MR film containing many structural defects to heat treatment, the original MR ratio of the film can be obtained without adversely affecting the value of the anisotropic magnetic field.
本発明によるＮ ｌ １Ｆ ｅｌＣｏを主成分とする合
金薄膜においては、適度な量のＣｏ添加によって伝導電
子散乱の異方性が極大化し、ＮｉＣｏと同程度のＭＲ比
を持つに至ったものと考えられる。また、構造欠陥を多
く含む膜においては、熱処理が施されることにより、構
造欠陥が解消され、本来のＭＲ比を示すことになると考
えられる。さらに、本発明において軟磁気特性が良好で
ある理由について考察するため、膜の磁気特性に大きな
影響を与える結晶粒の状態を、ＦＥ−８ＦＭを用いて観
察した。第１表に、ｃｏ濃度と結晶粒径の関係を示す。It is thought that in the alloy thin film of the present invention whose main component is Nl 1F elCo, the anisotropy of conduction electron scattering is maximized by adding an appropriate amount of Co, resulting in an MR ratio comparable to that of NiCo. It will be done. Further, in a film containing many structural defects, it is thought that by applying heat treatment, the structural defects are eliminated and the film exhibits the original MR ratio. Furthermore, in order to consider the reason why the soft magnetic properties are good in the present invention, the state of crystal grains, which greatly affects the magnetic properties of the film, was observed using FE-8FM. Table 1 shows the relationship between co concentration and crystal grain size.
一般に、薄膜を構成する結晶粒が小さいほど、結晶磁気
異方性が抑制され、軟磁気特性は良好となると考えられ
ている。ＮｉＣｏ膜においては、結晶粒径はＮｉＦｅ膜
と較べて非常に大きくなっており、第２図に示したよう
に異方性磁界が非常に大きくなってしまうことが理解で
きる。一方、Ｃｏ６重量％の膜においては、結晶粒径は
ＮｉＦｅと同程度である。その結果、磁気異方性が小さ
く、軟磁気特性がほとんど劣化しないものと考えられる
。Generally, it is believed that the smaller the crystal grains constituting the thin film, the more suppressed the magnetocrystalline anisotropy and the better the soft magnetic properties. It can be seen that in the NiCo film, the crystal grain size is much larger than that in the NiFe film, and as shown in FIG. 2, the anisotropic magnetic field becomes very large. On the other hand, in a film containing 6% by weight of Co, the crystal grain size is comparable to that of NiFe. As a result, it is thought that the magnetic anisotropy is small and the soft magnetic properties hardly deteriorate.
このように、本発明によるＭＲ膜は、良好な軟磁気特性
を保ちつつ、大きなＭＲ比を示し、ＭＲ材料として優れ
た特性を発揮するにいたる。As described above, the MR film according to the present invention exhibits a large MR ratio while maintaining good soft magnetic properties, and exhibits excellent properties as an MR material.
（実施例１） 第３図に、本発明の一実施例を示す。(Example 1) FIG. 3 shows an embodiment of the present invention.
第３図において、ガラス基板１上に、ＭＲ成膜として膜
厚１５００人のＮｉｓ。Ｆｅｔ。Ｃｏｅ （重量％）
膜を蒸着した。その後真空中（５Ｘ１０−７Ｔｏ ｒ
ｒ）にて熱処理（３２０℃−２時間）を行った。次に、
この膜上にＡｕ３を蒸着した（膜厚は２４０ＯＡ）。さ
らに、このＡｕ蒸着膜上にフォトレジストパターンを形
成し、Ａ ｒガス雰囲気中でイオンエツチングを行い、
感磁部分である矩形状のパターン４およびセンス電流を
供給するための電極パターン５に加工した。ここで、エ
ツチング条件は、加速電圧：５００Ｖ、Ａｒガス圧カニ
ｌＸ１０”’Ｔｏｒｒである。さらに、このパターン上
にマスクとなるフォトレジストパターンを形成し、選択
化学エツチングを行うことによって、ＭＲ膜を長さ２ｍ
ｍＮ幅５０μｍの矩形状のパターンに露出させ、ＭＲ素
子を作製した。In FIG. 3, Ni is deposited on a glass substrate 1 to a thickness of 1500 as an MR film. Fet. Coe (weight%)
A film was deposited. After that, it was placed in a vacuum (5X10-7 Tor
Heat treatment (320°C for 2 hours) was performed at r). next,
Au3 was deposited on this film (film thickness: 240 OA). Furthermore, a photoresist pattern is formed on this Au vapor deposited film, and ion etching is performed in an Ar gas atmosphere.
A rectangular pattern 4, which is a magnetically sensitive part, and an electrode pattern 5, which is used to supply a sense current, were formed. Here, the etching conditions are acceleration voltage: 500 V, Ar gas pressure 1 x 10'' Torr.Furthermore, a photoresist pattern is formed as a mask on this pattern, and selective chemical etching is performed to form the MR film. length 2m
An MR element was fabricated by exposing it to a rectangular pattern with a mN width of 50 μm.
このように作製したＭＲ素子において、磁界印加を永久
磁石によって行い、電気抵抗を４端子法によって測定す
ることにより、ＭＲ比Δρ／ρを測定したところ、５．
１％という高い値が得られた。また、試料振動型磁力計
を用いて測定した異方性磁界の値は７．８０ｅであり、
バイアスのがかり易さおよび磁界検出感度の点から望ま
しい値となっていることがわかった。In the MR element manufactured in this manner, the MR ratio Δρ/ρ was measured by applying a magnetic field using a permanent magnet and measuring the electrical resistance using a four-terminal method.
A high value of 1% was obtained. In addition, the value of the anisotropic magnetic field measured using a sample vibrating magnetometer was 7.80e,
It was found that this is a desirable value in terms of ease of bias application and magnetic field detection sensitivity.
このように、本実施例において作製されたＭＲ素子は、
非常に大きなＭＲ比および良好な軟磁気特性を示すこと
がわかった。そこで、この素子に数Ｏｅのオーダーで変
化する外部磁界を印加したところ、従来に較べて、より
高い磁界検出感度と、より高い出力を得ることができた
。In this way, the MR element fabricated in this example is
It was found that it exhibited a very large MR ratio and good soft magnetic properties. Therefore, when an external magnetic field varying on the order of several Oe was applied to this element, higher magnetic field detection sensitivity and higher output could be obtained than in the past.
（実施例２）
第３図において、ＭＲ成膜を５Ｘ１０−３ＴｏｒｒのＡ
ｒガス中、放電電力５．０Ｗ／ｃｍ２スパッタ法で成膜
し、他は、実施例１と全く同様にしてＭＲ素子を作製し
た。本実施例においても実施例１と同様に、大きなＭＲ
比および良好な軟磁気特性が得られ、高磁界検出感度と
高出力を得ることができた。(Example 2) In Fig. 3, MR film formation was performed at A of 5X10-3 Torr.
An MR element was produced in the same manner as in Example 1 except that the film was formed by sputtering in r gas with a discharge power of 5.0 W/cm2. In this example, as in Example 1, a large MR
It was possible to obtain high magnetic field detection sensitivity and high output with good magnetic field ratio and soft magnetic properties.
（実施例３）
第３図において、ＭＲ成膜を成膜後、熱処理を行わずに
Ａｕ膜３を成膜し、矩形状のパターン４および電極パタ
ーン５を加工し、選択化学エツチングを行うことによっ
てＭＲ膜を露出させた後、真空中（５Ｘ １０−’Ｔｏ
ｒ ｒ）にて熱処理（３２０℃−２時間）を行いＭＲ
素子を作製した。本実施例においても実施例１と同様に
、大きなＭＲ比および良好な軟磁気特性が得られ、高磁
界検出感度と高出力を得ることができた。(Example 3) In FIG. 3, after forming the MR film, an Au film 3 is formed without heat treatment, a rectangular pattern 4 and an electrode pattern 5 are processed, and selective chemical etching is performed. After exposing the MR film by
Heat treatment (320°C for 2 hours) at
The device was fabricated. In this example, as in Example 1, a large MR ratio and good soft magnetic properties were obtained, and high magnetic field detection sensitivity and high output were obtained.
（発明の効果）
以上のように、本発明の磁気抵抗効果薄膜は、ＮＩＮ
Ｆｅ１Ｃｏを主成分とし、Ｎｉの組成比を８０重量％以
上８３重量％以下とし、しかもＣＯの組成比が６重量％
以上９重量％以下とすることによって、ＮｉＣ０と同程
度の大きなＭＲ比を示し、しかも異方性磁界の値はＮｉ
Ｆｅと同程度に小さくなり、高感度・高出力のＭＲ素子
に適したものである。(Effects of the Invention) As described above, the magnetoresistive thin film of the present invention has NIN
The main component is Fe1Co, the Ni composition ratio is 80% by weight or more and 83% by weight or less, and the CO composition ratio is 6% by weight.
By setting the content to 9% by weight or less, it exhibits a large MR ratio comparable to that of NiC0, and the value of the anisotropic magnetic field is lower than that of NiC0.
It is as small as Fe and is suitable for high-sensitivity, high-output MR elements.
また本発明のＭＲ膜の製造方法においては、Ｎｉｓ Ｆ
ｅ１Ｃｏを主成分とするＭＲ膜の作製時に、２００℃以
上４００℃以下の熱処理を行うことによって、成膜直後
に多く含まれる構造欠陥を解消し、膜本来のＭＲ比を引
き出すことができる。Furthermore, in the method for manufacturing an MR film of the present invention, Nis F
By performing heat treatment at 200° C. or higher and 400° C. or lower when producing an MR film containing e1Co as a main component, it is possible to eliminate many structural defects immediately after film formation and bring out the original MR ratio of the film.
を図である・阜３圓＋７７１一番帽め一諭Ｆ６１１４ｉ
）幻１′ある。
図において、
１ニガラス基板、２：ＭＲ膜、３：Ａｕ膜、５：感磁部
分である矩形状パターン、６：電極。This is a diagram of F3 + 771 Ichiban Hatsuke F6114i
) There is an illusion 1'. In the figure, 1: glass substrate, 2: MR film, 3: Au film, 5: rectangular pattern which is a magnetically sensitive part, 6: electrode.
Claims (2)
膜において、Ｎｉの組成比が８０重量％以上８３重量％
以下であり、しかもＣｏの組成比が６重量％以上９重量
％以下であることを特徴とする磁気抵抗効果薄膜。(1) In a magnetoresistive thin film whose main components are Ni, Fe, and Co, the composition ratio of Ni is 80% by weight or more and 83% by weight.
A magnetoresistive thin film characterized in that the composition ratio of Co is 6% by weight or more and 9% by weight or less.
膜の製造方法において、２００℃以上４００℃以下の熱
処理の工程を含むことを特徴とする磁気抵抗効果薄膜の
製造方法。(2) A method for manufacturing a magnetoresistive thin film containing Ni, Fe, and Co as main components, which comprises a step of heat treatment at 200° C. or higher and 400° C. or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174742A JP2545935B2 (en) | 1988-07-12 | 1988-07-12 | Magnetoresistive thin film and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174742A JP2545935B2 (en) | 1988-07-12 | 1988-07-12 | Magnetoresistive thin film and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0223680A true JPH0223680A (en) | 1990-01-25 |
| JP2545935B2 JP2545935B2 (en) | 1996-10-23 |
Family
ID=15983883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63174742A Expired - Lifetime JP2545935B2 (en) | 1988-07-12 | 1988-07-12 | Magnetoresistive thin film and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2545935B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283735A (en) * | 1996-04-10 | 1997-10-31 | Nec Corp | Integrated magnetic sensor and its manufacture |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4890891B2 (en) | 2006-03-10 | 2012-03-07 | 山梨日本電気株式会社 | Magnetic sensor, manufacturing method thereof, and electronic apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927587A (en) * | 1982-08-05 | 1984-02-14 | Akai Electric Co Ltd | Manufacture of thin magnetic film for magneto-resistance element |
| JPS60200935A (en) * | 1984-03-23 | 1985-10-11 | Hitachi Ltd | Magnetoresistive alloy film and its manufacturing method |
| JPS61144893A (en) * | 1984-12-18 | 1986-07-02 | Aichi Tokei Denki Co Ltd | magnetoresistive element |
-
1988
- 1988-07-12 JP JP63174742A patent/JP2545935B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927587A (en) * | 1982-08-05 | 1984-02-14 | Akai Electric Co Ltd | Manufacture of thin magnetic film for magneto-resistance element |
| JPS60200935A (en) * | 1984-03-23 | 1985-10-11 | Hitachi Ltd | Magnetoresistive alloy film and its manufacturing method |
| JPS61144893A (en) * | 1984-12-18 | 1986-07-02 | Aichi Tokei Denki Co Ltd | magnetoresistive element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283735A (en) * | 1996-04-10 | 1997-10-31 | Nec Corp | Integrated magnetic sensor and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2545935B2 (en) | 1996-10-23 |
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