JPH02236822A - Production of magnetic recording medium - Google Patents

Production of magnetic recording medium

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Publication number
JPH02236822A
JPH02236822A JP1058369A JP5836989A JPH02236822A JP H02236822 A JPH02236822 A JP H02236822A JP 1058369 A JP1058369 A JP 1058369A JP 5836989 A JP5836989 A JP 5836989A JP H02236822 A JPH02236822 A JP H02236822A
Authority
JP
Japan
Prior art keywords
electron beam
film
magnetic recording
evaporation source
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1058369A
Other languages
Japanese (ja)
Inventor
Kiyokazu Toma
清和 東間
Ryuji Sugita
龍二 杉田
Kazuyoshi Honda
和義 本田
Yasuhiro Kawawake
康博 川分
Tatsuro Ishida
達朗 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1058369A priority Critical patent/JPH02236822A/en
Publication of JPH02236822A publication Critical patent/JPH02236822A/en
Pending legal-status Critical Current

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  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、高密度記録特性に優れた金属薄膜型磁気記録
媒体の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a thin metal film type magnetic recording medium having excellent high-density recording characteristics.

従来の技術 従来、磁気記録媒体としては高分子フィルム等の非磁性
基板上に磁性粉を塗布した塗布型のものが使用されて来
たが、より高い記録密度を達成するために、非磁性基板
上に金属薄膜をスバッタ法や真空蒸着法で形成した薄膜
型が実用化されつつある。薄膜型磁気記録媒体の中でも
、特にCo基磁性薄膜を磁性層として形成した磁気記録
媒体が、優れた短波長記録特性のゆえに注目を集めてい
る。
Conventional technology Conventionally, coated magnetic recording media have been used, in which magnetic powder is coated on a non-magnetic substrate such as a polymer film, but in order to achieve higher recording density, a non-magnetic substrate A thin film type, in which a thin metal film is formed on top by a sputtering method or a vacuum evaporation method, is being put into practical use. Among thin film magnetic recording media, magnetic recording media in which a Co-based magnetic thin film is formed as a magnetic layer are attracting attention because of their excellent short wavelength recording characteristics.

Co基磁性薄膜はスパッタ法や真空蒸着法(イオンブレ
ーティング法のように蒸発原子の一部をイオン化して膜
を堆積する方法も含む)により作成ざれるが、特に後者
の方法によれば高い堆積速度が達成でき、量産に適して
いる。
Co-based magnetic thin films can be created by sputtering or vacuum deposition (including methods such as ion blating, which ionizes some of the evaporated atoms to deposit the film), but the latter method is particularly expensive. The deposition rate can be achieved and it is suitable for mass production.

非磁性基板として高分子フィルムを用いて、真空蒸着法
により金属蓮膜型磁気記録媒体を製造する方法としては
、高分子フィルムを円筒状キャンの局面に・沿わせて走
行させつつ磁性層を蒸着する方法が最も優れている。第
4図にこのような方法を用いた真空蒸着装置の内部構造
の概略を示す。
A method for manufacturing a metal lotus film type magnetic recording medium by vacuum deposition using a polymer film as a non-magnetic substrate involves depositing a magnetic layer while running the polymer film along the curve of a cylindrical can. The best way to do this is to FIG. 4 schematically shows the internal structure of a vacuum evaporation apparatus using such a method.

高分子フィルム1は円筒状キャン2の周面に沿って走行
する。この高分子フィルム1上に蒸発源5によって磁性
層が形成される。3、4は高分子フィルム1の供給ロー
ルあるいは巻き取りロールである。蒸発源5としては、
抵抗加熱蒸発源、誘導加熱蒸発源、電子ビーム蒸発源等
が考えられるが、高融点金属であるCo基合金を高速で
蒸発させるためには、電子ビーム蒸発源を採用する必要
がある。尚、量産用の大型蒸発源の場合にはピアス型の
電子銃を用いるのが一般的である。7はピアス型電子銃
よって発生される電子ビームを示している。蒸発sI5
と円筒状キャン2との間には、蒸発源5から蒸発する蒸
気が不要な部分に付着するのを防止するために、遮蔽板
6が配置されている。
The polymer film 1 runs along the circumferential surface of the cylindrical can 2. A magnetic layer is formed on this polymer film 1 by an evaporation source 5 . 3 and 4 are supply rolls or take-up rolls for the polymer film 1. As the evaporation source 5,
A resistance heating evaporation source, an induction heating evaporation source, an electron beam evaporation source, etc. are conceivable, but in order to evaporate the Co-based alloy, which is a high melting point metal, at high speed, it is necessary to employ an electron beam evaporation source. Incidentally, in the case of a large-scale evaporation source for mass production, a piercing type electron gun is generally used. 7 shows an electron beam generated by a Pierce type electron gun. Evaporation sI5
A shielding plate 6 is arranged between the can 2 and the cylindrical can 2 in order to prevent the vapor evaporated from the evaporation source 5 from adhering to unnecessary parts.

遮蔽板6はSで示されるように開口している。この間口
部Sを通過した蒸気が高分子フィルムI上に付着し、磁
性層が形成されろ。
The shielding plate 6 is open as shown by S. The vapor that has passed through this opening S adheres to the polymer film I, forming a magnetic layer.

磁性層がCoとCrあるいはCoとN1とCrを主成分
である薄膜型磁気記録媒体を、第4図に示したような装
置にて、真空蒸着法によりCoとCrあるいはCoとN
1とCrを同一の蒸発源から蒸発させて形成すると、以
下の問題が生じる。
A thin film magnetic recording medium whose magnetic layer mainly consists of Co and Cr or Co and N1 and Cr is coated with Co and Cr or Co and N using a vacuum evaporation method using an apparatus such as the one shown in Fig. 4.
When 1 and Cr are evaporated from the same evaporation source, the following problems occur.

Crの蒸気圧がCoあるいはN1の蒸気圧に比べて高い
ために、時間的に組成が変化する。すなわち、第5図に
示すように蒸着初期においてはC1・を多く含んだ膜が
形成され、後期にはCrをあまり含まない膜が形成され
る。磁性層であるC o − C r膜及びCo−Ni
−Cr膜において、膜の組成が異なると磁気特性も変化
するので、均一な特性を有する長尺の磁気記録媒体を製
造することは困難である。
Since the vapor pressure of Cr is higher than that of Co or N1, the composition changes over time. That is, as shown in FIG. 5, a film containing a large amount of C1. is formed in the early stage of vapor deposition, and a film containing little Cr is formed in the latter stage. Co-Cr film and Co-Ni magnetic layer
In a -Cr film, the magnetic properties change if the composition of the film differs, so it is difficult to manufacture a long magnetic recording medium with uniform properties.

この問題を解決するために、Crを供給する。Crを供
給する方法としては、Cr材を直接蒸発源に供給する方
法と、Crと同時にCo,Niを供給する方法がある。
To solve this problem, Cr is supplied. Methods for supplying Cr include a method for directly supplying a Cr material to an evaporation source, and a method for supplying Co and Ni at the same time as Cr.

供給材の形態は元素単体や合金で粒状、棒状あるいは板
状である。
The feed material is in the form of a single element or an alloy, and is granular, rod-shaped, or plate-shaped.

発明が解決しようとする課題 しかし、蒸発源の高温溶融状態の溶湯中に材料を供給す
ると突沸現象を生じ、飛散した溶湯が基板に到達し、基
板を損僅することがある。基板に損傷があると記録再生
時のドロップアウトの原因となるので不都合である。
Problems to be Solved by the Invention However, when a material is supplied into the molten metal in the high temperature molten state of the evaporation source, a bumping phenomenon occurs, and the scattered molten metal may reach the substrate and damage the substrate. Damage to the substrate is inconvenient because it causes dropouts during recording and reproduction.

本発明は、このような従来技術の課題を解決することを
目的とする。
The present invention aims to solve the problems of the prior art.

課題を解決するための手段 本発明は、CoとCrあるいはCoとN1とCrを主成
分とする薄膜型磁気記録媒体を、電子ビーム蒸発源を用
いた真空蒸着法により、CoとCrあるいはCoとN1
とCrを同一の蒸発源から蒸発させて、移動しつつある
基板上に連続的に作製する際に、前記蒸発源に第1の電
子ビーム及び第2の電子ビームを照射し、それぞれの電
子ビーム照射領域から蒸発する原子の混合を防止する隔
壁を設け、前記第1の電子ビーム照射領域から蒸発する
原子を蒸着に供し、前記第2の電子ビーム照射領域の一
端よりCr,  Co−CrあるいはCo−Ni−Cr
を供給することを特徴とする磁気記録媒体の製造方法で
ある。
Means for Solving the Problems The present invention provides a thin-film magnetic recording medium whose main components are Co and Cr or Co, N1, and Cr by vacuum evaporation using an electron beam evaporation source. N1
When evaporating and Cr from the same evaporation source and continuously fabricating them on a moving substrate, the evaporation source is irradiated with a first electron beam and a second electron beam, and each electron beam is A partition wall is provided to prevent mixing of atoms evaporated from the irradiation area, and atoms evaporated from the first electron beam irradiation area are subjected to evaporation, and Cr, Co-Cr or Co is evaporated from one end of the second electron beam irradiation area. -Ni-Cr
This is a method of manufacturing a magnetic recording medium, characterized by supplying the following:

作用 第2の電子ビーム照射領域においてあらかじめ材料供給
による突沸現象を生じせしめ、第1の電子ビーム照射領
域における突沸現象の発生を抑制する。
Effect: A bumping phenomenon is caused in advance by material supply in the second electron beam irradiation area, and the occurrence of a bumping phenomenon in the first electron beam irradiation area is suppressed.

実施例 以下に、本発明の実施例について図面を参照しながら説
明する。
Examples Examples of the present invention will be described below with reference to the drawings.

第1図〜第3図を用いて本発明の実施例について説明す
る。
Embodiments of the present invention will be described using FIGS. 1 to 3.

第1図(a)、 (b)、(c)は、本発明の一実施例
における蒸発源の概略図である。10はるつぼ、l4は
溶湯、15は供給材、11は第1の電子ビーム、12は
第2の電子ビームである。ふたつの電子ビーム照射領域
からの蒸発原子が混合しないように隔壁l3が設けてあ
る。第1の電子ビームl1は蒸着に供され従来と同様で
ある。第2の電子ビーム12は蒸着用ではなく、材料供
給にともなう溶湯の突沸現象を積極的に生じせしめるも
のである。ここで問題となる突沸現象について説明する
。原因については明確ではないが、供給材に含有されて
いる不純物ガスあるいは特に供給材の表面に存在する酸
化物が原因ではないかと考えられる。不純物ガスがある
場合には供給材が溶湯に溶け込むと同時に突沸し比較的
短時間に消滅するものと考えられる。一方、酸化物の場
合にはこれ自身が突沸現象の原因となるとは考えにくい
。しかし、酸化物が溶湯表面を浮遊し、浮遊さんか物に
熱源である電子ビームが照射されると突沸現象の原因に
なり得る。即ち、酸化物自身が回りの溶湯温度よりも高
温になり酸化物のごく近傍の溶湯共々飛んでしまうミク
ロな突沸現象が考えられる。また、突沸現象とは言えな
いが、電子ビーム照射により酸化物が帯電し飛散するこ
とも考えられる。いずれの場合も酸化物に電子ビームが
照射されて発生する現象であり消滅するまでにはかなり
の時間を要することが予想される。この時閘を短縮する
ためには、浮遊酸化物に電子ビームが照射される確率を
高める工夫が必要である。第1図(b)、 (c)のよ
うに第2の電子ビームl2を走査すると浮遊酸化物に電
子ビームが照射される確率が高まる。更に、第3図に示
すように、第2の電子ビーム12を複数にして照射する
と酸化物への電子ビーム照射確率が高まる。また、第3
図に示すように複数ある電子ビーム照射部分の間に遮蔽
物l6によるるつぼの絞り込みを設けることも効果があ
る。第2図(a)、 (b)に真空蒸着装置の概略を示
す。第2図(a)は蒸発源として第1図(a)あるいは
(b)を用いた場合であり、第2図(b)は蒸発源とし
て第1図(c)を用いた場合である。隔壁13により第
2の電子ビームによって蒸発する原子や飛散される酸化
物及び溶湯が成膜部に到達するのを防止している。
FIGS. 1(a), (b), and (c) are schematic diagrams of an evaporation source in one embodiment of the present invention. 10 is a crucible, l4 is a molten metal, 15 is a supply material, 11 is a first electron beam, and 12 is a second electron beam. A partition wall l3 is provided to prevent evaporated atoms from the two electron beam irradiation regions from mixing. The first electron beam l1 is used for vapor deposition and is similar to the conventional one. The second electron beam 12 is not used for vapor deposition, but is used to actively cause the bumping phenomenon of the molten metal as the material is supplied. Here, the problem of bumping phenomenon will be explained. Although the cause is not clear, it is thought that impurity gases contained in the feed material or oxides particularly present on the surface of the feed material may be the cause. If impurity gas is present, it is considered that the feed material melts into the molten metal and simultaneously bumps and disappears in a relatively short time. On the other hand, in the case of oxides, it is unlikely that they themselves cause the bumping phenomenon. However, if oxides float on the surface of the molten metal and the floating particles are irradiated with an electron beam, which is a heat source, it can cause bumping. That is, a microscopic bumping phenomenon can be considered in which the oxide itself becomes hotter than the temperature of the surrounding molten metal and the molten metal in the immediate vicinity of the oxide is blown away. Furthermore, although this cannot be said to be a bumping phenomenon, it is also possible that the oxide is charged and scattered due to electron beam irradiation. In either case, the phenomenon occurs when the oxide is irradiated with an electron beam, and it is expected that it will take a considerable amount of time to disappear. In order to shorten this time delay, it is necessary to devise ways to increase the probability that floating oxides are irradiated with the electron beam. When the second electron beam l2 is scanned as shown in FIGS. 1(b) and 1(c), the probability that the floating oxide will be irradiated with the electron beam increases. Furthermore, as shown in FIG. 3, when a plurality of second electron beams 12 are irradiated, the probability of irradiating the oxide with the electron beam increases. Also, the third
As shown in the figure, it is also effective to narrow down the crucible using a shield 16 between a plurality of electron beam irradiation parts. Figures 2(a) and 2(b) schematically show the vacuum evaporation apparatus. FIG. 2(a) shows the case where either FIG. 1(a) or (b) is used as the evaporation source, and FIG. 2(b) shows the case when FIG. 1(c) is used as the evaporation source. The partition wall 13 prevents atoms evaporated by the second electron beam, oxides scattered, and molten metal from reaching the film forming portion.

以下に、Co−Crの場合を例にして更に具体的に説明
する。
A more specific explanation will be given below, taking the case of Co-Cr as an example.

実施例1 第2図(a)に示した装置にてC o − C rを蒸
着した.基板としてl!@ 5 0 c m、膜厚8μ
mのボリイミドフィルムを用いた。ポリイミドフィルム
の走行速度は50m/分とし、膜厚200nmのC o
 − C r膜を5000mにわたって蒸着した。尚、
蒸発源としては、ポリイミドフィルムの幅方向の長さが
8 0 c m,ポリイミドフィルムの走行方向の長さ
が15cm、深さが10cmのものを用いた。第1の電
子ビーム11は、加速電圧30kVのピアス型電子銃を
用いて発生させ、電子電流は3Aとした。蒸発源5にお
いて輻5 0 c ms  周波数600Hzで走査し
た。第2の電子ビームl2は、加速電圧30kVのピア
ス型電子銃を用いて発生させ、電子電流1Aとし、走査
は行なわなかった。作製したC o − C r膜の組
成は、蒸着初期から終期まで長手方向において、Cr組
成が22±0.3wt%の範囲内になっており、長尺に
わたり安定し十分実用可能な膜が得られていることがわ
かった。
Example 1 Co-Cr was deposited using the apparatus shown in Figure 2(a). As a board! @50cm, film thickness 8μ
A polyimide film of m was used. The running speed of the polyimide film was 50 m/min, and the film thickness was 200 nm.
- Cr film was deposited over 5000 m. still,
As the evaporation source, a polyimide film having a length in the width direction of 80 cm, a length in the running direction of the polyimide film of 15 cm, and a depth of 10 cm was used. The first electron beam 11 was generated using a Pierce type electron gun with an accelerating voltage of 30 kV, and the electron current was 3 A. The evaporation source 5 was scanned with a radiation of 50 cm s and a frequency of 600 Hz. The second electron beam l2 was generated using a Pierce type electron gun with an accelerating voltage of 30 kV, an electron current of 1 A, and no scanning was performed. The composition of the produced Co-Cr film was such that the Cr composition was within the range of 22 ± 0.3 wt% in the longitudinal direction from the initial stage to the final stage of vapor deposition, and a film that was stable over a long length and sufficiently usable for practical use was obtained. I found out that it was.

実施例2 次に、蒸発−gE5として第1図(b)を用いて蒸着を
行った。第2電子ビーム12を周波数600Hzでるつ
ぼ10の15cmの幅方向に輻10cmで走査した。他
は実施例1と同様である。作製したCo−Cr膜の組成
は、蒸着初期から終期まで長手方向において、Cr組成
が22±0.3wt%の範囲内になっており、実施例1
と同様に長尺にわたり安定し十分実用可能な膜が得られ
ていることがわかった。
Example 2 Next, vapor deposition was carried out using FIG. 1(b) as evaporation-gE5. The second electron beam 12 was scanned at a frequency of 600 Hz in the 15 cm width direction of the crucible 10 with a radius of 10 cm. The rest is the same as in Example 1. The composition of the produced Co-Cr film was such that the Cr composition was within the range of 22 ± 0.3 wt% in the longitudinal direction from the initial stage to the final stage of vapor deposition, which was the same as that of Example 1.
Similarly, it was found that a film that was stable over a long length and was sufficiently usable for practical use was obtained.

実施例3 次に、蒸発源5として第!図(c)を用い、第2図(b
)に示す真空蒸着装置にて蒸着を行なった。尚、蒸発源
の大きさは、ポリイミドフィルムの幅方向の長さが6 
0 c ms  ポリイミドフイルムの走行方向の長さ
が3 0 c m, 深さが10cmのものを用いた。
Example 3 Next, as the evaporation source 5! Using figure (c), figure 2 (b)
) Vapor deposition was carried out using a vacuum evaporation apparatus shown in . The size of the evaporation source is such that the length in the width direction of the polyimide film is 6.
A 0 cms polyimide film having a length in the running direction of 30 cm and a depth of 10 cm was used.

第1の電子ビームl1は、加速電圧30kVのピアス型
電子銃を用いて発生させ、電子電流は5Aとした。蒸発
源5において幅50cm,  周波数600Hzで走査
した。第2の電子ビームl2は、加・速電圧30kVの
ピアス型電子銃を用いて発生させ、電子電流2Aとし、
第1電子ビームと同様に走査した.他は実施例lと同様
である。作製したCo−Cr膜の組成は、蒸着初門から
終期まで長手方向において、Cr組成が22±0.2w
t%の範囲内になっており、実施例1及び実施例2に比
べて紺成がより安定になった。
The first electron beam l1 was generated using a Pierce type electron gun with an accelerating voltage of 30 kV, and the electron current was 5 A. The evaporation source 5 was scanned with a width of 50 cm and a frequency of 600 Hz. The second electron beam l2 is generated using a Pierce-type electron gun with an acceleration/acceleration voltage of 30 kV, and an electron current of 2 A.
Scanning was performed in the same manner as the first electron beam. The rest is the same as in Example 1. The composition of the produced Co-Cr film was such that the Cr composition was 22±0.2w in the longitudinal direction from the initial stage to the final stage of evaporation.
It was within the range of t%, and the navy blue formation was more stable than in Examples 1 and 2.

実施例4 次に、蒸発源5として第3図を用いて蒸着を行った。第
2電子ビーム12をふたつにしそれぞれをるつぼ10の
15cmの幅方向に幅10cmで周波数600Hzで走
査した。第2電子ビーム12のそれぞれは加速電圧3 
0 k V、電子電流は0.5八とした。他は実施例1
と同様である。作製したCo−Cr膜の組成は、蒸着初
期から終期まで長手方向において、Cr組成が22±0
.3wt%の範囲内になっており、実施例1と同様に長
尺にわたり安定し十分実用可能な膜が得られていること
がわかった。
Example 4 Next, evaporation was performed using FIG. 3 as the evaporation source 5. Two second electron beams 12 were used, and each was scanned in the 15 cm width direction of the crucible 10 with a width of 10 cm and a frequency of 600 Hz. Each of the second electron beams 12 has an accelerating voltage of 3
The voltage was 0 kV and the electron current was 0.58. Others are Example 1
It is similar to The composition of the produced Co-Cr film was such that the Cr composition was 22±0 in the longitudinal direction from the initial stage to the final stage of evaporation.
.. It was found that the amount was within the range of 3 wt%, and as in Example 1, a film that was stable over a long length and was sufficiently usable for practical use was obtained.

比較例 次に、従来例として第2図(a)に示した装置において
第2電子ビーム12及び隔壁13を使用せずに蒸着を行
なった。即ち、第4図に示した従来の装置と材料供給を
除いてはほぼ同等な状態で蒸着を行なった。その他の条
件は実施例1と同様である。作製したCo−Cr膜の組
成は、蒸着初期から終期まで長平方向において、Cr’
A成が22±0.3wt%の範囲内になっており、長尺
にわたり安定した膜が得られていることがわかった。
Comparative Example Next, as a conventional example, vapor deposition was carried out using the apparatus shown in FIG. 2(a) without using the second electron beam 12 and the partition wall 13. That is, vapor deposition was carried out under substantially the same conditions as the conventional apparatus shown in FIG. 4, except for the material supply. Other conditions are the same as in Example 1. The composition of the produced Co-Cr film was Cr' in the longitudinal direction from the initial stage to the final stage of deposition.
It was found that the A composition was within the range of 22±0.3 wt%, and a stable film was obtained over a long length.

以との4実施例及び1従来例で作製したCo一Cr膜を
8mm幅のテープ状にスリットし、市販の8ミリデッキ
にて評価した。評価項目はドロップアウトである。ドロ
ップアウトはドロップアウトカウンターで評価し、出力
が10dB以上低下し、かつその出力低下が30μs以
上にわたる場合の数を計測した。第1表にドロップアウ
トの個数を1分間の平均として示した。
The Co-Cr films produced in the following four examples and one conventional example were slit into tapes with a width of 8 mm, and evaluated using a commercially available 8 mm deck. The evaluation item is dropout. Dropout was evaluated using a dropout counter, and the number of cases where the output decreased by 10 dB or more and the output decreased for 30 μs or more was measured. Table 1 shows the number of dropouts as an average per minute.

(以下余白) 第1表から明らかなように本発明によれば従来例に比べ
てドロップアウト個数において顕著な改善効果がある.
この結果は、前述した突沸現象の抑制の効果と考えられ
る。
(The following is a blank space) As is clear from Table 1, the present invention has a significant improvement effect on the number of dropouts compared to the conventional example.
This result is considered to be the effect of suppressing the bumping phenomenon described above.

以上の具体的な実施例ではCo−Crについてのみの説
明であったがCo−Ni−Crの場合でも全く同様であ
る。また、種々の供給材を用いてもほぼ同様の結果が得
られた。更に、基板としてポリイミドフィルム以外の高
分子フイルムを用いても同様の結果が得られた。
In the above specific examples, only Co--Cr was described, but the same applies to Co--Ni--Cr. Also, almost similar results were obtained using various feed materials. Furthermore, similar results were obtained even when a polymer film other than polyimide film was used as the substrate.

発明の効果 本発明の製造方法を用いることにより、ドロップアウト
の少なく、しかも長手方向及び幅方向に特性が一定の長
尺の磁気記録媒体を、真空蒸着法により安定に生産でき
る。
Effects of the Invention By using the manufacturing method of the present invention, it is possible to stably produce a long magnetic recording medium with little dropout and constant characteristics in the longitudinal and width directions by vacuum evaporation.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例における磁気記録媒体の製造
方法に用いる蒸発源の概略を示す断面図、第2図は本発
明の実施例における磁気記録媒体の製造方法に用いる蒸
発源と膜形成部との位置関係の概略を示す断面図、第3
図は本発明の実施例における磁気記録媒体の製造方法に
用いる蒸発源の概略を示す断面図、第4図は従来例の一
実施例における真空蒸着装置の内部構造の概略を示す断
面図、第5図はCrを供給せずに同一蒸発源からCoと
Crを蒸発させて長尺のC o − C r膜を作製し
た場合の、蒸着時間と膜の組成との関係を示すグラフで
ある。 1・・・基板、2・・・円筒状キャン、3、4・ ・供
給ロールあるいは巻き取りロール、5・・・蒸発源、6
・・・遮蔽板、7・・・電子ビーム、lO・・・るつぼ
、11・・・第1の電子ビーJ1、12・・・第2の電
子ビーム、l3・・・隔壁、 14・ ・ ・溶湯、 
15・ ・ ・供給材、 l6・・・遮蔽物、S・・・
開口部。 代理人の氏名 弁理士 粟野重孝はか1名瘍 図 /θ l4 第 図
FIG. 1 is a cross-sectional view schematically showing an evaporation source used in a method of manufacturing a magnetic recording medium in an embodiment of the present invention, and FIG. 2 is a sectional view showing an evaporation source and a film used in a method of manufacturing a magnetic recording medium in an embodiment of the present invention. Cross-sectional view showing the outline of the positional relationship with the forming part, 3rd
4 is a sectional view schematically showing an evaporation source used in a method for manufacturing a magnetic recording medium according to an embodiment of the present invention; FIG. FIG. 5 is a graph showing the relationship between vapor deposition time and film composition when a long Co-Cr film is produced by evaporating Co and Cr from the same evaporation source without supplying Cr. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Cylindrical can, 3, 4... Supply roll or take-up roll, 5... Evaporation source, 6
... Shielding plate, 7... Electron beam, lO... Crucible, 11... First electron beam J1, 12... Second electron beam, l3... Partition wall, 14... Molten metal,
15... Supply material, l6... Shielding object, S...
Aperture. Name of agent: Patent attorney Shigetaka Awano (1 person) / θ l4 Figure

Claims (3)

【特許請求の範囲】[Claims] (1)CoとCrあるいはCoとNiとCrを主成分と
する薄膜型磁気記録媒体を、電子ビーム蒸発源を用いた
真空蒸着法により、CoとCrあるいはCoとNiとC
rを同一の蒸発源から蒸発させて、移動しつつある基板
上に連続的に作製する際に、前記蒸発源に第1の電子ビ
ーム及び第2の電子ビームを照射し、それぞれの電子ビ
ーム照射領域から蒸発する原子の混合を防止する隔壁を
設け、前記第1の電子ビーム照射領域から蒸発する原子
を蒸着に供し、前記第2の電子ビーム照射領域の一端よ
りCr、Co−CrあるいはCo−Ni−Crを供給す
ることを特徴とする磁気記録媒体の製造方法。
(1) A thin film magnetic recording medium containing Co and Cr or Co and Ni and Cr as main components is prepared using a vacuum evaporation method using an electron beam evaporation source.
When evaporating r from the same evaporation source and continuously fabricating it on a moving substrate, the evaporation source is irradiated with a first electron beam and a second electron beam, and each electron beam irradiation A partition wall is provided to prevent mixing of atoms evaporated from the region, and atoms evaporated from the first electron beam irradiation region are subjected to evaporation, and Cr, Co-Cr or Co- A method for manufacturing a magnetic recording medium, comprising supplying Ni-Cr.
(2)第2の電子ビームを走査させることを特徴とする
請求項1記載の磁気記録媒体の製造方法。
(2) The method for manufacturing a magnetic recording medium according to claim 1, characterized in that the second electron beam is scanned.
(3)第2の電子ビームが複数であることを特徴とする
請求項1または2記載の磁気記録媒体の製造方法。
(3) The method of manufacturing a magnetic recording medium according to claim 1 or 2, wherein the second electron beam is plural.
JP1058369A 1989-03-10 1989-03-10 Production of magnetic recording medium Pending JPH02236822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1058369A JPH02236822A (en) 1989-03-10 1989-03-10 Production of magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1058369A JPH02236822A (en) 1989-03-10 1989-03-10 Production of magnetic recording medium

Publications (1)

Publication Number Publication Date
JPH02236822A true JPH02236822A (en) 1990-09-19

Family

ID=13082413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1058369A Pending JPH02236822A (en) 1989-03-10 1989-03-10 Production of magnetic recording medium

Country Status (1)

Country Link
JP (1) JPH02236822A (en)

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