JPH02237012A - Aligner - Google Patents

Aligner

Info

Publication number
JPH02237012A
JPH02237012A JP1057498A JP5749889A JPH02237012A JP H02237012 A JPH02237012 A JP H02237012A JP 1057498 A JP1057498 A JP 1057498A JP 5749889 A JP5749889 A JP 5749889A JP H02237012 A JPH02237012 A JP H02237012A
Authority
JP
Japan
Prior art keywords
light
laser beam
laser
exposure apparatus
shaping member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1057498A
Other languages
Japanese (ja)
Other versions
JP2810400B2 (en
Inventor
Naoto Sano
直人 佐野
Masato Aketagawa
正人 明田川
Kazushi Nakano
一志 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP1057498A priority Critical patent/JP2810400B2/en
Publication of JPH02237012A publication Critical patent/JPH02237012A/en
Priority to US07/715,745 priority patent/US5121160A/en
Application granted granted Critical
Publication of JP2810400B2 publication Critical patent/JP2810400B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To contrive improvement in the utilization efficiency of a laser beam by a method wherein a photo-extraction part, with which the laser beam which is made incident on the circumference of the photo-transmitting section of a luminous flux shaping member is guided to a light-detector, is formed in the vicinity of the photo-transmitting part, and the unnecessary light which is not transmitted to the substrate to be exposed is guided to the light detector. CONSTITUTION:The title aligner is constituted in such a manner that the laser beam, which is extracted from the pinhole 29 formed on the circumference of the circular aperture 23A of a luminous flux shaping member 23 used to shape up the cross-sectional shape of the laser beam, is detected by a line sensor 27. As a result, the efficiency of utilization of the laser beam used for exposure of wafer can be enhanced, and also the exposure time when the wafer is exposed can be reduced. Also, as the light flux diameter, spreading angle and the like can always be monitored by a laser beam flux monitoring device 31, the change in luminous flux diameter and the spreading angle of the laser beam made incident on the optical system of illumination are detected, and necessary correction can be conducted automatically.

Description

【発明の詳細な説明】 (技術分野) 本発明は露光装置に関するものであり、特にエキシマレ
ーザー等のレーザーを露光用光源として用いる露光装置
に関する. 〔従来技術〕 近年、LSI等の集積回路の高集積化に伴い、1μm以
下の微細パターンを正確にウエハ上に形成する事ができ
る露光装置が使用されている。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to an exposure apparatus, and more particularly to an exposure apparatus that uses a laser such as an excimer laser as an exposure light source. [Prior Art] In recent years, as integrated circuits such as LSIs have become highly integrated, exposure apparatuses that can accurately form fine patterns of 1 μm or less on wafers have been used.

また、装置の解像線巾を更に細かくするために、遠紫外
域の大強度の光を放射するエキシマレーザーを露光用光
源として搭載した露光装置の開発も盛んに行なわれてい
る. この種の露光装置では、レーザー光の断面形状を整形し
た後、被露光基板に対する露光量制御或いはレーザー光
の位置ずれ等を補正するために、レーザー光の光路中に
淘ビームスブリッターを斜設し、このビームスブリツタ
を介してレーザー光の一部を光検出器に導くことがある
。しかしながら、このような方法でレーザー光を光検出
器に導くことは、露光に使用するレーザー光の利用効率
を下げることになり、好ましくない. く発明の概要〉 本発明は上述の問題に鑑みてなされたものであり、レー
ザー光の光路中にビームスブリッター等を斜設すること
なく、レーザー光の一部を光検出器へ導くことが可能な
露光装置を提供することを目的とする. この目的を達成するために、本発明の露光装置は、レー
ザー光の断面形状を整形する所定形状の光伝達部を備え
た光束整形部材と、該光束整形部材の光伝達部からのレ
ーザー光を該被露光基板に向ける光学系と、該光伝達部
の周囲に入射するレーザー光を光検出器に導くために該
光束整形部材の該光伝達部の近傍に形成した光抽出部と
を有することを特徴としており、光束整形部材の光伝達
部を介して被露光基板へ伝達されない不要な光を光検出
器へ導くように構成している。評、レーザー光の利用効
率を向上させることができ、ウエ八等の被露光基板を露
光する際の露光時間を短縮化することが可能になる。
Furthermore, in order to further refine the resolution line width of the equipment, there is active development of exposure equipment equipped with an excimer laser that emits high-intensity light in the far ultraviolet region as an exposure light source. In this type of exposure equipment, after shaping the cross-sectional shape of the laser beam, a beam splitter is installed obliquely in the optical path of the laser beam in order to control the exposure amount to the exposed substrate or correct positional deviation of the laser beam. However, a portion of the laser light may be guided to a photodetector via this beam splitter. However, guiding the laser light to the photodetector in this manner is undesirable because it reduces the utilization efficiency of the laser light used for exposure. Summary of the Invention The present invention has been made in view of the above-mentioned problems, and it is possible to guide a part of the laser beam to a photodetector without obliquely installing a beam splitter or the like in the optical path of the laser beam. The purpose is to provide a possible exposure device. In order to achieve this object, the exposure apparatus of the present invention includes a beam shaping member including a light transmitting section of a predetermined shape that shapes the cross-sectional shape of laser light, and a beam shaping member that controls the laser beam from the light transmitting section of the beam shaping member. It has an optical system directed toward the substrate to be exposed, and a light extraction section formed near the light transmission section of the light beam shaping member to guide laser light incident around the light transmission section to a photodetector. It is characterized by being configured so that unnecessary light that is not transmitted to the exposed substrate via the light transmission section of the light beam shaping member is guided to the photodetector. On the other hand, it is possible to improve the utilization efficiency of laser light, and it is possible to shorten the exposure time when exposing a substrate to be exposed such as a wafer.

本発明の露光装置の具体的な形態や更なる特徴は後述す
る実施例に記載されている. (実施例) 第1図は本発明の露光装置の一実施例を示す全体の構成
図である.Aは露光装置本体を示す。1は波長λw24
8.4nmのレーザー光を放射するKrFエキシマレー
ザーであり、防振クッション4上のレーザ一定盤3上に
設置されたXYθステージ2上に固定されている。Bは
レーザー1からのレーザー光2oを露光装置本体1の光
学系へ伝送する伝送光学系であり、図示されたミラー5
を含む複数個の光学部品で構成されている。この伝送光
学系の詳細は後述する。6は照明光学系、9は半導体製
造用の回路パターンが描かれたレチクル、90はレチク
ルホルダ、1oはレチクル9の回路パターンを投影する
為の投影レンズ、11はレンズ支持台、12はウエハ(
被露光基板)、13はウエハ12を吸着固定するチャッ
ク、14はXYステージ、15はステッパ一定盤、16
は防振クッションである。エキシマレーザー1から射出
したレーザー光20は、伝送系光学Bを通過して露光装
置本体Aの照明光学系6に入射する。
The specific form and further features of the exposure apparatus of the present invention are described in the Examples described below. (Embodiment) FIG. 1 is an overall configuration diagram showing an embodiment of the exposure apparatus of the present invention. A indicates the main body of the exposure apparatus. 1 is the wavelength λw24
It is a KrF excimer laser that emits a laser beam of 8.4 nm, and is fixed on an XYθ stage 2 installed on a laser constant plate 3 on a vibration-proof cushion 4. B is a transmission optical system that transmits the laser beam 2o from the laser 1 to the optical system of the exposure apparatus main body 1, and the mirror 5 shown in the figure
It is composed of multiple optical components including. Details of this transmission optical system will be described later. 6 is an illumination optical system, 9 is a reticle on which a circuit pattern for semiconductor manufacturing is drawn, 90 is a reticle holder, 1o is a projection lens for projecting the circuit pattern of the reticle 9, 11 is a lens support, and 12 is a wafer (
13 is a chuck for suctioning and fixing the wafer 12, 14 is an XY stage, 15 is a stepper fixed plate, 16
is an anti-vibration cushion. Laser light 20 emitted from excimer laser 1 passes through transmission system optics B and enters illumination optical system 6 of exposure apparatus main body A.

そして照明光学系6でビーム径を拡大された後、レチク
ル9、投影レンズ10を経て、12のウェハ上に到達す
る.照明光学系6と投影レンズ1oから成る露光用光学
系は、ステッパ一定盤15に固定されたレンズ支持台1
1によって一体化されて固定されているため、露光装置
本体A内での各光学系の相対位置は実質的に不変である
。レチクル9上には前述のように回路パターンが描かれ
ており、レーザー光で回路パターンを照明することによ
り、投影レンズ10により1/5に縮小されたパターン
がウエハ12上に転写される。
After the beam diameter is expanded by the illumination optical system 6, the beam passes through the reticle 9 and the projection lens 10, and then reaches the wafer 12. An exposure optical system consisting of an illumination optical system 6 and a projection lens 1o is mounted on a lens support stand 1 fixed to a stepper fixed plate 15.
1, the relative positions of each optical system within the exposure apparatus main body A remain substantially unchanged. A circuit pattern is drawn on the reticle 9 as described above, and by illuminating the circuit pattern with laser light, the pattern reduced to 1/5 is transferred onto the wafer 12 by the projection lens 10.

ウエハl2は、ウエハチャック13上に真空吸着されて
おり、ウェハチャック13は、ステーツパ一定盤15上
に設けられた可動のXYス゜テージ4上に固定されてい
る.ウエハ12をNYステージ14により互いに直交す
るXおよびYの2方向に搬送することができ、縮小され
たパターンを、ウエハ上の任意の位置に転写することが
できる。
The wafer l2 is vacuum-adsorbed onto a wafer chuck 13, and the wafer chuck 13 is fixed on a movable XY stage 4 provided on a stage plate 15. The wafer 12 can be transported by the NY stage 14 in two mutually orthogonal directions, X and Y, and the reduced pattern can be transferred to any position on the wafer.

通常ウエハ12上には数十ショットの縮小パターンが転
写されるため、XYステージ14をXまたはY方向にス
テップ穆動させては、レチクル9と投影レンズ10を介
してレーザー光を各ショットに照射して、各ショットに
パターンの転写を行なうという動作をくり返し行うこと
になる. また、17はXYステージ14上に固設した光検出器か
ら成る照度計であり、XYステージ14を駆動すること
により、投影レンズ10の像面に位置付けられ、投影レ
ンズ10の像面における照度を測定する.この照度計1
7で測定される照度がウエハ12面上での照度として見
なされ、露光時の露光量制御のための制御データとして
用いられる。
Normally, several dozen shots of a reduced pattern are transferred onto the wafer 12, so by moving the XY stage 14 stepwise in the X or Y direction, laser light is irradiated onto each shot through the reticle 9 and the projection lens 10. Then, the process of transferring the pattern to each shot is repeated. Reference numeral 17 denotes an illuminance meter consisting of a photodetector fixed on the XY stage 14. By driving the XY stage 14, it is positioned on the image plane of the projection lens 10 and measures the illuminance on the image plane of the projection lens 10. Measure. This illumination meter 1
The illuminance measured in step 7 is regarded as the illuminance on the surface of the wafer 12, and is used as control data for controlling the exposure amount during exposure.

第2図は第1図に示した伝送光学系の具体的な構成を示
す拡大図であり、本露光装置の特徴となる構成が描かれ
ている.また、第2図において、第1図に描かれた部材
と同一の部材には第1図と同じ符号が符してある。21
は凹レンズ、22は凸レンズで、レンズ21と22でア
ナモフイックビームエキスパンダー系を構成する.23
は円形開口(光伝達部)を有する光束整形部材で、第3
図に示すように光束整形部材23の光伝達部23Aの周
囲の所定位置に2個のピンホール29が形成されている
。24は光束整形部材23の円形間口23Aを通過した
断面形状が円形のレーザー光を受ける像回転プリズムで
あり、不図示の回転機構により伝送光学系Bの光軸を回
転軸として回転可能(図中矢印W参照)に設置してある
。25は光束整形部材29のピンホール29を通過した
レーザー光を像回転プリズム24を介して受ける小型反
射鏡で、ピンホール29からのレーザー光を集光レンズ
26に向けて反射する.集光レンズ26は反射鏡25で
反射したレーザー光をラインセンサ27上に集光する.
ラインセンサ27からの光電変換信号は信号線30を介
してレーザー光束モニター装置31に入力される.28
はビームエキスパンダー系であり、光束整形部材23の
円形開口23A及び像回転プリズム24を通過したレー
ザー光を受けて、このレーザー光の光束径を拡大した後
、露光装置本体Aの照明光学系6へ指向する. エキシマレーザー1から射出したレーザー光は反射鏡5
で反射され、凹レンズ21と凸レンズ22から成るビー
ムエキスパンダー系に入射する.エキシマレーザー1か
らのレーザー光の断面形状は、レーザーの放電部の形状
に応じて決まり、通常長方形の形状を有する.本実施例
ではレーザー光の断面形状を長方形から略正方形にする
ために凹レンズ2lと、凸レンズ21を各々トーリック
レンズで構成し、アナモフィックなビームエキスパンダ
ー系としている.従ってこのビームエキスパンダー系(
21.22)を通過したレーザー光の断面形状は略正方
形となる.ビームエキスパンダー系(21.22)から
のレーザー光は反射鏡5で反射され、光束整形部材23
に入射する.光束整形部材23の円形開口23Aの直径
は、入射するレーザー光の正方形断面の一辺の長さより
小さく設定されており、円形開口23Aの中心とレーザ
ー光の中心は伝送光学系Bの光軸上に位置する.従って
、光束整形部材23の円形開口23Aによりレーザー光
の断面形状が円形に変換され、しかもレーザー光の中心
付近の比較的パワー密度が一様な部分が取り出される。
FIG. 2 is an enlarged view showing the specific configuration of the transmission optical system shown in FIG. 1, and depicts the characteristic configuration of the present exposure apparatus. Further, in FIG. 2, the same members as those depicted in FIG. 1 are designated by the same reference numerals as in FIG. 21
is a concave lens, and 22 is a convex lens. Lenses 21 and 22 constitute an anamorphic beam expander system. 23
is a light beam shaping member having a circular aperture (light transmission part);
As shown in the figure, two pinholes 29 are formed at predetermined positions around the light transmission section 23A of the light beam shaping member 23. Reference numeral 24 denotes an image rotation prism that receives laser light having a circular cross-sectional shape after passing through the circular opening 23A of the beam shaping member 23, and is rotatable about the optical axis of the transmission optical system B by a rotation mechanism (not shown). (see arrow W). A small reflecting mirror 25 receives the laser beam that has passed through the pinhole 29 of the beam shaping member 29 via the image rotation prism 24, and reflects the laser beam from the pinhole 29 toward the condenser lens 26. A condensing lens 26 condenses the laser beam reflected by the reflecting mirror 25 onto a line sensor 27.
A photoelectric conversion signal from the line sensor 27 is input to a laser beam monitor device 31 via a signal line 30. 28
is a beam expander system, which receives the laser beam that has passed through the circular aperture 23A of the beam shaping member 23 and the image rotation prism 24, expands the beam diameter of this laser beam, and then sends it to the illumination optical system 6 of the exposure apparatus main body A. Direct. The laser beam emitted from the excimer laser 1 is reflected by the reflecting mirror 5.
The beam is reflected by the beam and enters a beam expander system consisting of a concave lens 21 and a convex lens 22. The cross-sectional shape of the laser beam from the excimer laser 1 is determined depending on the shape of the discharge part of the laser, and usually has a rectangular shape. In this embodiment, in order to change the cross-sectional shape of the laser beam from a rectangle to a substantially square, the concave lens 2l and the convex lens 21 are each constructed of toric lenses, creating an anamorphic beam expander system. Therefore, this beam expander system (
The cross-sectional shape of the laser beam that has passed through 21.22) is approximately square. The laser beam from the beam expander system (21, 22) is reflected by the reflecting mirror 5, and the beam shaping member 23
is incident on . The diameter of the circular aperture 23A of the beam shaping member 23 is set smaller than the length of one side of the square cross section of the incident laser beam, and the center of the circular aperture 23A and the center of the laser beam are on the optical axis of the transmission optical system B. To position. Therefore, the circular aperture 23A of the beam shaping member 23 converts the cross-sectional shape of the laser beam into a circular shape, and moreover, a portion near the center of the laser beam where the power density is relatively uniform is extracted.

一方、光束整形部材23の円形開口23Aの周囲に入射
して光束整形部材23で遮光されるレーザー光の一部は
、2つのピンホール29を通過する.光束整形部材23
の円形間口23Aを通過したレーザー光と2つのピンホ
ール29を通過した2本のレーザー光は像回転プリズム
24に入射し、円形間口23Aを通過したレーザー光は
ビームエキスパンダー系28へ向けられ、ピンホール2
9を通過した2本のレーザー光は反射鏡25へ向けられ
る. 像回転プリズム24を前述の回転機構により回転させる
と、円形開口23Aを通過したレーザー光とピンホール
29を通過した2本のレーザー光が回転し、像回転プリ
ズム24の光射出側からレーザー光を観察すると、第4
図に示すような形状となる.第4図において、41は光
束整形部材23の円形開口23Aを通過したレーザー光
の断面であり、42はピンホール29を通過したレーザ
ー光の軌跡を示している.像回転プリズム24を回転さ
せると、第4図に示すように、ピンホール2・9を通過
した2本のレーザー光がリング状の軌跡を描いて回転す
るので、反射鏡25は2木のレーザー光の軌跡(光路)
上の所定位置に2本レーザー光を同時に反射できるよう
に設置される.また、2本のレーザー光の軌跡を一致さ
せるために、本実施例では光束整形部材23の円形開口
23Aの中心から互いに等しい距離だけ離れた位置に2
つのピンホールを形成した。
On the other hand, a portion of the laser light that enters around the circular opening 23A of the beam shaping member 23 and is blocked by the beam shaping member 23 passes through the two pinholes 29. Luminous flux shaping member 23
The laser beam that has passed through the circular opening 23A and the two laser beams that have passed through the two pinholes 29 are incident on the image rotation prism 24, and the laser beam that has passed through the circular opening 23A is directed to the beam expander system 28 and pinned. hall 2
The two laser beams that have passed through 9 are directed toward a reflecting mirror 25. When the image rotation prism 24 is rotated by the aforementioned rotation mechanism, the laser beam that passed through the circular aperture 23A and the two laser beams that passed through the pinhole 29 are rotated, and the laser beam is emitted from the light exit side of the image rotation prism 24. When observed, the fourth
The shape will be as shown in the figure. In FIG. 4, 41 is a cross section of the laser beam that has passed through the circular aperture 23A of the beam shaping member 23, and 42 is the locus of the laser beam that has passed through the pinhole 29. When the image rotating prism 24 is rotated, the two laser beams that have passed through the pinholes 2 and 9 rotate while drawing a ring-shaped trajectory, as shown in FIG. Trajectory of light (light path)
It is installed at a predetermined position on the top so that two laser beams can be reflected at the same time. In order to match the trajectories of the two laser beams, in this embodiment, two laser beams are placed at positions that are the same distance apart from the center of the circular aperture 23A of the beam shaping member 23.
Two pinholes were formed.

本実施例においてレーザー光の光路中に回転可能な像回
転プリズムを設けたのは、光束整形部材23の円形開口
23Aを通過した露光に使用するレーザー光の断面強度
分布を均一化するためである.即ち、光束整形部材23
でレーザー1から射出したレーザー光の中心部付近の光
を取り出すことにより、比較的パワー密度が均一なレー
ザー光を得ることができるが、レーザー光の断面強度分
布が完全に均一なものではない。とりわけ、エキシマレ
ーザー1から射出するレーザー光は光軸に関して非対称
な強度分布をもつので、この強度分布を少なくとも光軸
に関して対称にしてやる必要がある。そこで、光束整形
部材23の円形開口23Aを通過したレーザー光を像回
転プリズム24に入射させ、像回転プリズム24を光軸
を回転軸として回転させることによりレーザー光を光軸
の回りで回転させ、光軸に関して対称でほぼ均一な断面
強度分布をもつレーザー光を形成するのである.従って
、第1図に示す本実施例の露光表面では、ウエハ12を
レーザー光で露光する時、像回転プリズム24が回転せ
しめられ、そして断面強度分布がほぼ均一なレーザー光
が照明光学系6で拡大されてレチクル9に向けられる。
In this embodiment, the rotatable image rotation prism is provided in the optical path of the laser beam in order to equalize the cross-sectional intensity distribution of the laser beam used for exposure that passes through the circular aperture 23A of the beam shaping member 23. .. That is, the light beam shaping member 23
By extracting the light near the center of the laser beam emitted from the laser 1, a laser beam with relatively uniform power density can be obtained, but the cross-sectional intensity distribution of the laser beam is not completely uniform. In particular, since the laser beam emitted from the excimer laser 1 has an asymmetric intensity distribution with respect to the optical axis, it is necessary to make this intensity distribution at least symmetrical with respect to the optical axis. Therefore, the laser beam that has passed through the circular aperture 23A of the beam shaping member 23 is incident on the image rotation prism 24, and the image rotation prism 24 is rotated about the optical axis to rotate the laser beam around the optical axis. It forms a laser beam that is symmetrical about the optical axis and has a nearly uniform cross-sectional intensity distribution. Therefore, on the exposure surface of this embodiment shown in FIG. 1, when exposing the wafer 12 with laser light, the image rotation prism 24 is rotated, and the laser light with a substantially uniform cross-sectional intensity distribution is emitted by the illumination optical system 6. It is enlarged and directed towards the reticle 9.

さて、反射鏡25に入射するピンホール29からの2本
のレーザー光は反射鏡25で反射されて集、光レンズ2
6を介してラインセンサ27上に各々集光する.レーザ
ー1から射出するレーザー光は平行光束又は所定の角度
で拡がった(若しくは収斂した)光であり、アナモフイ
ツクビームエキスパンダー系(21.22)はこのレー
ザー光を拡大するのみならず平行光束として射出するよ
うに構成される.従って、光束整形部材23に入射する
レーザー光はレーザー1が正常に動作している限り平行
光束であり、光束整形部材23の円形間口23Aとピン
ホール29、及び像回転プリズム24を通過した後の各
レーザー光も同様に平行光束となる。本実施例では、ラ
インセンサ27の受光面が集光レンズ26の焦点位置に
くるように両者の位置関係を定めており、集光レンズ2
6が反射鏡25で反射された2本の各々が平行光束から
成るレーザー光を受けるため、レーザー1が正常に動作
しており、各部材(5,21,22,23.24)が正
確にセッティングしてあれば、この2本のレーザー光は
集光レンズ26によりラインセンサ27の受光面上の同
一位置に集光する.この時のラインセンサ27の受光面
上で照度分布が第5図(A)に図示してある。第5図(
A)では照度をラインセンサ27の出力レベルとしてグ
ラフの縦軸に、レーザー光の受光面上の入射位置をグラ
フの横軸にとり、ラインセンサ27の受光面上での照度
分布が描かれている。
Now, the two laser beams from the pinhole 29 that enter the reflecting mirror 25 are reflected by the reflecting mirror 25 and converged, and the optical lens 2
6 and converge onto the line sensor 27, respectively. The laser beam emitted from the laser 1 is a parallel beam or a beam spread (or converged) at a predetermined angle, and the anamorphic beam expander system (21.22) not only expands this laser beam but also converts it into a parallel beam. Configured to eject. Therefore, the laser light incident on the beam shaping member 23 is a parallel beam as long as the laser 1 is operating normally, and after passing through the circular opening 23A of the beam shaping member 23, the pinhole 29, and the image rotation prism 24, Each laser beam also becomes a parallel beam of light. In this embodiment, the positional relationship between the two is determined so that the light receiving surface of the line sensor 27 is at the focal point of the condensing lens 26, and the condensing lens 26
6 is reflected by the reflecting mirror 25 and each receives a laser beam consisting of a parallel beam, so the laser 1 is operating normally and each member (5, 21, 22, 23, 24) is accurately If set, these two laser beams are focused by the condensing lens 26 onto the same position on the light receiving surface of the line sensor 27. The illuminance distribution on the light receiving surface of the line sensor 27 at this time is shown in FIG. 5(A). Figure 5 (
In A), the illuminance is plotted as the output level of the line sensor 27 on the vertical axis of the graph, and the incident position of the laser beam on the light receiving surface is plotted on the horizontal axis of the graph, and the illuminance distribution on the light receiving surface of the line sensor 27 is drawn. .

また、前述のようにラインセンサ27からの出力信号は
信号線30を介してレーザー光束モニター装置31に入
力される.本実施例では、レーザー光束モニター装置3
1内のメモリー内に、第5図(A)に示す状態によける
ラインセンサ27の受光面上での最大照度(ラインセン
サ27からの出力信号のピーク値)と最大照度を示す受
光面上の位置(出力信号のピーク位置を各々基準強度及
び基準位置として記憶している。そして、ラインセンサ
27からの出力信号のピーク値とピーク位置の基準強度
と基準位置からのずれを検出することにより、レーザー
光の光束系の変動や拡がり角(平行度)の変動をモニタ
ーしている。例えば、レーザー1の動作特性の変動又は
部材(5.21.22)のセッティング位置の変動によ
り光束整形部材23に入射するレーザー光の拡がり角が
大きくなると、2つのピンホール29に入射するレーザ
ー光の入射角も変化するので、ラインセンサ27からの
出力信号は第5図(B)に示すようになる。また、同様
の原因で光束整形部材23に入射するレーザー光の光束
径が大きくなると(但し、レーザーの出力が一定、レー
ザー光は平行光束)、2つのピンホール29に入射する
レーザー光の強度が小さくなるので、ラインセンサ27
からの出力信号は第5図(C)に示すようになる. このように、レーザー光の断面形状を整形する光束整形
部材23の円形開口23Aの周囲に形成したピンホール
29で抽出したレーザー光をラインセンサ27で検出す
るように構成すれば、レーザー光のウエハ12の露光の
ための利用効率を高めることができ、ウエハ12を露光
する時の露光時間を短縮することが可能になる。また、
レーザー光束モニター装置31でレーザー光の光束径や
拡がり角等を常時モニターすることができるので、照明
光学系6へ入射するレーザー光の光束径や拡がり角の変
動を検出して自動的に修正することも可能になる。特に
、本実施例の如く、レーザー1と露光装置本体Aを異な
る基台上に設置して、レーザーからのレーザー光を比較
的光路が長い伝送光学系Bを介して露光装置本体Aに導
く場合、伝送光学系Bのセッティングを高精度に行わな
ければならないので、伝送光学系Bの調整等にラインセ
ンサの出力信号を利用すると有効である。また、レーザ
ー1自身の動作特性の変動も検出可能であるため、レー
ザー1の異常を早期発見できるという利点も生じる。
Furthermore, as described above, the output signal from the line sensor 27 is input to the laser beam monitor device 31 via the signal line 30. In this embodiment, the laser beam monitor device 3
The maximum illuminance on the light receiving surface of the line sensor 27 (peak value of the output signal from the line sensor 27) and the maximum illuminance on the light receiving surface in the state shown in FIG. (The peak position of the output signal is stored as the reference intensity and reference position, respectively.Then, by detecting the peak value and the deviation of the output signal from the line sensor 27 from the reference intensity and reference position, , monitors changes in the beam system and spread angle (parallelism) of the laser beam.For example, changes in the operating characteristics of the laser 1 or changes in the setting position of the member (5.21.22) may cause the beam shaping member to change. As the spread angle of the laser beam incident on the pinhole 23 increases, the incident angle of the laser beam incident on the two pinholes 29 also changes, so the output signal from the line sensor 27 becomes as shown in FIG. 5(B). Furthermore, when the beam diameter of the laser beam incident on the beam shaping member 23 increases due to the same reason (however, the laser output is constant and the laser beam is a parallel beam), the intensity of the laser beam incident on the two pinholes 29 increases. becomes smaller, so the line sensor 27
The output signal from is shown in Figure 5 (C). In this way, if the line sensor 27 detects the laser beam extracted through the pinhole 29 formed around the circular aperture 23A of the beam shaping member 23 that shapes the cross-sectional shape of the laser beam, the wafer of the laser beam can be detected. The utilization efficiency for exposing the wafer 12 can be increased, and the exposure time when exposing the wafer 12 can be shortened. Also,
Since the laser beam monitor device 31 can constantly monitor the beam diameter and divergence angle of the laser beam, fluctuations in the beam diameter and divergence angle of the laser beam incident on the illumination optical system 6 are detected and automatically corrected. It also becomes possible. Particularly, as in this embodiment, when the laser 1 and the exposure apparatus main body A are installed on different bases, and the laser beam from the laser is guided to the exposure apparatus main body A via the transmission optical system B, which has a relatively long optical path. Since the transmission optical system B must be set with high precision, it is effective to use the output signal of the line sensor for adjusting the transmission optical system B. Furthermore, since fluctuations in the operating characteristics of the laser 1 itself can be detected, there is also the advantage that abnormalities in the laser 1 can be detected early.

本実施例では、レーザー1からのレーザー光を更に効率
良く露光装置本体Aへ導くために、伝送光学系Bを構成
するレンズ(21,22.28)及び像回転プリズム2
9をSin2で構成している。また、露光装置本体Aの
照明光学系6中のレンズや投影レンズ10もSin.等
のレーザー光に対して透過率の良い硝材から成る。
In this embodiment, in order to more efficiently guide the laser light from the laser 1 to the exposure apparatus main body A, the lenses (21, 22, 28) and the image rotation prism 2 constituting the transmission optical system B are used.
9 is made up of Sin2. Further, the lenses in the illumination optical system 6 of the exposure apparatus main body A and the projection lens 10 are also in the Sin. It is made of a glass material that has good transmittance to laser light such as.

第2図において、反射鏡25は2つのピンホール29か
らのレーザー光を同時に反射し、集光レンズ2へ向けて
いるが、反射ut25の大きさを更に小さくし、2つの
ピンホール29からのレーザー光を順次反射鏡25で反
射して集光レンズ26へ向けラインセンサで交互に受光
するように構成することもできる.また、光束整形部材
23は円形開口23Aによりレーザー光を伝達するもの
であるが、円形開口23Aの代りに楕円形の反射面を不
透明基板上に形成して、反射型の光束整形部材とするこ
ともできる.この場合も楕円形反射面で入射レーザー光
の中央部付近を反射して、断面形状が円形のレーザー光
を照明光学系6へ向けて、反射面の周囲に設けた少なく
とも1個のピンホールからのレーザー光をラインセンサ
26に向ける.反射型の光束整形部材は、例えば、第2
図中のビームエキスパンダー系(21.22)と像回転
プリズム24の間にある反射鏡5の位置にレーザー光を
像回転プリズム24の方向に反射するように斜設すれば
良く、光束整形部材のピンホールを通過したレーザー光
を直接集光レンズで集光し、ラインセンサ等の光検出器
へ向けることが可能になる。従って、第2図に示す反射
鏡25の如き光路を折り曲げるための部材が不要になる
In FIG. 2, the reflecting mirror 25 simultaneously reflects the laser beams from the two pinholes 29 and directs them toward the condensing lens 2. However, the size of the reflection ut25 is further reduced, and the laser beams from the two pinholes 29 are directed to the condensing lens 2. It is also possible to configure the laser beam to be sequentially reflected by the reflecting mirror 25, directed toward the condenser lens 26, and received alternately by the line sensor. Furthermore, although the beam shaping member 23 transmits the laser beam through the circular aperture 23A, an elliptical reflective surface may be formed on the opaque substrate instead of the circular aperture 23A to make it a reflective beam shaping member. You can also. In this case as well, the elliptical reflective surface reflects near the center of the incident laser beam, and the laser beam with a circular cross section is directed toward the illumination optical system 6 through at least one pinhole provided around the reflective surface. Aim the laser beam at the line sensor 26. The reflective light beam shaping member is, for example, a second
It is sufficient to obliquely install the reflecting mirror 5 located between the beam expander system (21, 22) and the image rotation prism 24 in the figure so as to reflect the laser beam in the direction of the image rotation prism 24. It becomes possible to directly collect the laser light that has passed through the pinhole with a condenser lens and direct it to a photodetector such as a line sensor. Therefore, a member for bending the optical path, such as the reflecting mirror 25 shown in FIG. 2, becomes unnecessary.

一方、第2図の構成を若干変更することにより反射鏡2
5と集光レンズ26を省略することができる。即ち、光
束整形部材23のピンホール29からのレーザー光を像
回転プリズム24に向けることなく直接CCD等の2次
元センサアレイで受光し、このセンサアレイの出力をレ
ーザー光束モニター装置31に入力すれば良い。
On the other hand, by slightly changing the configuration of FIG.
5 and the condenser lens 26 can be omitted. That is, if the laser beam from the pinhole 29 of the beam shaping member 23 is directly received by a two-dimensional sensor array such as a CCD without directing it to the image rotation prism 24, and the output of this sensor array is input to the laser beam monitor device 31. good.

上述したいずれの構成であっても、第1図及び第2図が
示す露光装置と同様の効果を得ることができ、第1図に
示すように投影レンズを用いてレチクルの回路パターン
をウエハ上に投影する形態の露光装置に限らず、被露光
基板をレーザー光で走査してパターンを描くような形態
を含む種々の露光装置に本発明は適用できる. 以上説明した実施例は、光検出器としてラインセンサや
2次元センサアレイを使用してレーザー光の光束径の変
動や拡がり角の変動を検出するものであったが、本発明
は光検出器をこのような用途に使用する形態に限定され
ない.例えば、光束整形部材のピンホールからのレーザ
ー光を光電変換素子で受光し、光電変換素子からの出力
信号を積算露光計へ入力し、露光量制御を行うような形
態としても良い。この場合も、光束整形部材でけられて
照明光学系へ向けられ槃ないレーザー光を検出するので
、露光に使用するレーザー光の利用効率を向上させるこ
とが可能になる。
Regardless of the configuration described above, it is possible to obtain the same effect as the exposure apparatus shown in FIGS. 1 and 2, and as shown in FIG. The present invention is applicable to various types of exposure apparatuses, including not only an exposure apparatus that projects a pattern onto a substrate to be exposed, but also one that scans a substrate to be exposed with a laser beam to draw a pattern. The embodiments described above use a line sensor or a two-dimensional sensor array as a photodetector to detect variations in the beam diameter and divergence angle of laser light, but the present invention uses a photodetector. It is not limited to the form used for such purposes. For example, a configuration may be adopted in which a photoelectric conversion element receives laser light from a pinhole in a beam shaping member, and an output signal from the photoelectric conversion element is input to an integrating exposure meter to control the exposure amount. In this case as well, since the laser beam that is cut off by the beam shaping member and directed toward the illumination optical system is detected, it is possible to improve the utilization efficiency of the laser beam used for exposure.

また、光検出器へレーザー光を導くために光束整形部材
にピンホールを形成する代りに、微小反射面を光束整形
部材の開口の周囲の所定箇所に形成し、この微小反射面
によりレーザー光を反射して抽出し、光検出器へ向ける
ことも可能である。
Also, instead of forming a pinhole in the beam shaping member to guide the laser beam to the photodetector, a minute reflective surface is formed at a predetermined location around the aperture of the beam shaping member, and this minute reflective surface guides the laser beam. It is also possible to extract it by reflection and direct it to a photodetector.

(発明の効果〕 以上、本発明によれば、光束整形部材の光伝達部の周囲
に入射するレーザー光を光検出器に導く光抽出部を光伝
達部の近傍に形成しているため、レーザー光の光路中に
ビームスブリッター等を斜設することなく、クエ八等の
被露光基板へ伝達されない不要な光を光検出器へ導くこ
とができ、レーザー光の利用効率を向上させた露光装置
を提供することが可能になる。従って、被露光基板を露
光する時の露光時間を短縮することができ、スルーブッ
トの高い露光装置となる.
(Effects of the Invention) As described above, according to the present invention, since the light extraction part is formed near the light transmission part to guide the laser light incident around the light transmission part of the light flux shaping member to the photodetector, the laser Exposure equipment that improves laser light usage efficiency by guiding unnecessary light that is not transmitted to the substrate to be exposed, such as Kuehashi, to a photodetector without installing a beam splitter or the like in the optical path of the light. Therefore, the exposure time when exposing the substrate to be exposed can be shortened, resulting in an exposure apparatus with high throughput.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る露光装置の一実施例を示す全体構
成図。 第2図は第1図に示す伝送光学系の具体的構成を示す拡
大図。 第3図は光束整形部材の平面図。 第4図は回転している,像回転プリズムから射出するレ
ーザー光の状態を示す模式図。 第5図(A)〜(C)はラインセンサからの出力例を示
すグラフ図。 1・・・レーザー      6・・・照明光学系、9
・・・レチクル、     10・・・投影レンズ、1
2・・・ウエハ、      20・・・レーザー光、
23轡光束整形部材、  23A・・・円形開口、2 
4−・・像回転プリズム、  26・・・ラインセンサ
、29・・・ピンホール 2q lヴ日 (Aフ ζβ)
FIG. 1 is an overall configuration diagram showing an embodiment of an exposure apparatus according to the present invention. FIG. 2 is an enlarged view showing a specific configuration of the transmission optical system shown in FIG. 1. FIG. 3 is a plan view of the beam shaping member. FIG. 4 is a schematic diagram showing the state of laser light emitted from a rotating image rotating prism. FIGS. 5(A) to 5(C) are graphs showing examples of output from the line sensor. 1... Laser 6... Illumination optical system, 9
... Reticle, 10... Projection lens, 1
2... Wafer, 20... Laser light,
23 Luminous flux shaping member, 23A... circular aperture, 2
4--Image rotation prism, 26--Line sensor, 29--Pinhole 2q lv day (Afu ζβ)

Claims (7)

【特許請求の範囲】[Claims] (1)レーザーからのレーザー光で被露光基板を露光す
る露光装置において、該レーザー光の断面形状を整形す
る所定形状の光伝達部を備えた光束整形部材と、該光束
整形部材の光伝達部からのレーザー光を該被露光基板に
向ける光学系と、該光伝達部の周囲に入射するレーザー
光を光検出器に導くために該光束整形部材の該光伝達部
の近傍に形成した光抽出部とを有することを特徴とする
露光装置。
(1) In an exposure apparatus that exposes a substrate to be exposed with laser light from a laser, a light beam shaping member includes a light transmission section of a predetermined shape that shapes the cross-sectional shape of the laser light, and a light transmission section of the light flux shaping member. an optical system that directs the laser beam from the substrate toward the exposed substrate; and a light extractor formed near the light transmission section of the beam shaping member to guide the laser beam incident around the light transmission section to a photodetector. An exposure apparatus comprising:
(2)前記光抽出部がピンホールから成り、更に、該ピ
ンホールを通過した光を前記光検出器に導く反射鏡を有
することを特徴とする特許請求の範囲第(1)項記載の
露光装置。
(2) Exposure according to claim (1), characterized in that the light extraction section is made of a pinhole, and further includes a reflecting mirror that guides the light that has passed through the pinhole to the photodetector. Device.
(3)前記レーザーがエキシマレーザーであり、前記光
伝達部を円形の開口で構成したことを特徴とする特許請
求の範囲第(2)項記載の露光装置。
(3) The exposure apparatus according to claim (2), wherein the laser is an excimer laser, and the light transmission section is configured with a circular aperture.
(4)前記光検出器がセンサアレイから成り、更に、該
センサアレイと前記反射鏡の間に前記反射鏡が反射した
光を該センサアレイ上に集光する集光レンズを有するこ
とを特徴とする特許請求の範囲第(2)項記載の露光装
置。
(4) The photodetector is composed of a sensor array, and further includes a condenser lens between the sensor array and the reflector that focuses the light reflected by the reflector onto the sensor array. An exposure apparatus according to claim (2).
(5)前記光学系は前記光学系の光軸を回転軸として回
転可能な像回転プリズムを有し、前記反射鏡が該像回転
プリズムを介して前記ピンホールからの光を受けること
を特徴とする特許請求の範囲第(2)項記載の露光装置
(5) The optical system has an image rotating prism that is rotatable about the optical axis of the optical system, and the reflecting mirror receives light from the pinhole via the image rotating prism. An exposure apparatus according to claim (2).
(6)前記光検出部が複数個のピンホールから成ること
を特徴とする特許請求の範囲第(2)項記載の露光装置
(6) The exposure apparatus according to claim (2), wherein the photodetecting section is comprised of a plurality of pinholes.
(7)更に、前記光検出器で光電変換して得られた信号
を受け、該信号の大きさに応じて前記レーザー光の光束
径の変動を検出する検出手段を有することを特徴とする
特許請求の範囲第(1)項記載の露光装置。
(7) The patent further comprises a detection means for receiving a signal obtained by photoelectric conversion by the photodetector and detecting a variation in the beam diameter of the laser beam according to the magnitude of the signal. An exposure apparatus according to claim (1).
JP1057498A 1989-03-09 1989-03-09 Exposure equipment Expired - Fee Related JP2810400B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1057498A JP2810400B2 (en) 1989-03-09 1989-03-09 Exposure equipment
US07/715,745 US5121160A (en) 1989-03-09 1991-06-18 Exposure method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1057498A JP2810400B2 (en) 1989-03-09 1989-03-09 Exposure equipment

Publications (2)

Publication Number Publication Date
JPH02237012A true JPH02237012A (en) 1990-09-19
JP2810400B2 JP2810400B2 (en) 1998-10-15

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194600A (en) * 2005-12-21 2007-08-02 Asml Netherlands Bv Lithography device, and device manufacturing method
WO2012017783A1 (en) * 2010-08-02 2012-02-09 株式会社ニコン Transmission optical system, illumination optical system, exposure device, and device manufacturing method
JP2022544924A (en) * 2019-08-14 2022-10-24 アプライド マテリアルズ インコーポレイテッド A Hybrid Wafer Dicing Method Using Uniform Rotating Beam Laser Scribing and Plasma Etching

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194600A (en) * 2005-12-21 2007-08-02 Asml Netherlands Bv Lithography device, and device manufacturing method
WO2012017783A1 (en) * 2010-08-02 2012-02-09 株式会社ニコン Transmission optical system, illumination optical system, exposure device, and device manufacturing method
JP2012033787A (en) * 2010-08-02 2012-02-16 Nikon Corp Transmission optical system, illumination optical system, exposure apparatus, and device manufacturing method
US9122170B2 (en) 2010-08-02 2015-09-01 Nikon Corporation Transmission optical system, illumination optical system, exposure apparatus, and device manufacturing method
JP2022544924A (en) * 2019-08-14 2022-10-24 アプライド マテリアルズ インコーポレイテッド A Hybrid Wafer Dicing Method Using Uniform Rotating Beam Laser Scribing and Plasma Etching

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