JPH02238372A - Current detector - Google Patents
Current detectorInfo
- Publication number
- JPH02238372A JPH02238372A JP1060034A JP6003489A JPH02238372A JP H02238372 A JPH02238372 A JP H02238372A JP 1060034 A JP1060034 A JP 1060034A JP 6003489 A JP6003489 A JP 6003489A JP H02238372 A JPH02238372 A JP H02238372A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- current detector
- substrate
- current
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
被測定電流の流れる導体層を具えた基板に磁電変換素子
を搭載した電流検出器の構成に関し、大電流の検出を可
能にすると共に、プリント配線板等に実装可能に小型化
させることを目的とし、被測定電流の流れる導体層を有
する基板の上面に、該導体層に流す該被測定電流によっ
て該上面と平行方向に発生する被測定磁界を磁電変換す
る磁電変換素子を、該導体層と電気的絶縁状態で搭載し
、
該被測定磁界と直交方向のバイアス磁界を該磁電変換素
子に与えるバイアス磁界発生手段を配設し、
少なくとも該基板と磁電変換素子とバイアス磁界発生手
段とを、外部磁界遮断用シールドケースに収容してなる
ことを特徴とする構成とし、そして、前記導体層が金属
板であり、前記基板が該導体層金属板の上面に絶縁層を
設け、該絶縁層の上に少なくとも前記磁電変換素子を搭
載してなること、
または、前記導体層が前記被測定電流を流したとき前記
基板上面に対し平行方向の前記被測定磁界を発生せしめ
る一対のコイル部を具え、前記基板が絶縁板の上に一対
のコイル部を具えた該導体層を具え、
前記磁電変換素子が一対の該コイル部の対向間に搭載さ
れてなること、
さらに、前記磁電変換素子の形成基板に、該磁電変換素
子の出力を増幅する増幅器を少なくとも具えた回路素子
を形成してなることを特徴とし構成する。[Detailed Description of the Invention] [Summary] This invention relates to the configuration of a current detector in which a magnetoelectric transducer is mounted on a substrate provided with a conductor layer through which a current to be measured flows, and which enables detection of large currents and is suitable for printed wiring boards, etc. Aiming at miniaturization for mounting, a magnetic field to be measured generated in a direction parallel to the upper surface by the current to be measured flowing through the conductor layer is converted into magnetoelectricity on the upper surface of the substrate having a conductor layer through which the current to be measured flows. A magnetoelectric transducer is mounted in an electrically insulated state from the conductor layer, and bias magnetic field generating means is provided for applying a bias magnetic field in a direction perpendicular to the magnetic field to be measured to the magnetoelectric transducer, and at least the substrate and the magnetoelectric transducer are mounted. and a bias magnetic field generating means are housed in a shield case for shielding external magnetic fields, and the conductor layer is a metal plate, and the substrate has an insulating layer on the upper surface of the conductor layer metal plate. a layer, and at least the magnetoelectric transducer is mounted on the insulating layer, or the conductive layer generates the magnetic field to be measured in a direction parallel to the upper surface of the substrate when the current to be measured flows. further comprising a pair of coil portions arranged on the substrate, the substrate comprising the conductor layer having the pair of coil portions on an insulating plate, and the magnetoelectric conversion element being mounted between the pair of coil portions facing each other; , a circuit element comprising at least an amplifier for amplifying the output of the magneto-electric transducer is formed on the substrate on which the magneto-electric transducer is formed.
本発明は基板に被測定電流の流れる導体層を具え、該導
体層に被測定電流を流したとき基板上面と平行方向に発
生する磁界を検出する磁電変換素子を該基板に搭載し、
プリント配線板等に実装できる小型電流検出器の構成に
関する。The present invention includes a substrate having a conductor layer through which a current to be measured flows, and a magnetoelectric transducer that detects a magnetic field generated in a direction parallel to the upper surface of the substrate when the current to be measured is passed through the conductor layer.
This invention relates to the configuration of a small current detector that can be mounted on a printed wiring board, etc.
電流検出器は磁気ディスク装置やプリンタ等のモータ・
アクチュエータ制1卸用に用いられるが、近年のそれら
装置およびその周辺機器の小型化および構成回路部品の
表面実装化に伴って、プリント配線板等に表面実装可能
に小型化された電流検出器が、強く要望されるようにな
った。Current detectors are used for motors such as magnetic disk devices and printers.
It is used for actuator systems, but in recent years, with the miniaturization of these devices and their peripheral equipment and the surface mounting of component circuit parts, current detectors have been miniaturized so that they can be surface mounted on printed wiring boards, etc. , has become strongly requested.
導体を流れる被測定電流が作り出す磁界を測定し、その
測定値から該電流の強さを知る電流検出器は公知である
。2. Description of the Related Art Current detectors are known that measure the magnetic field created by a current to be measured flowing through a conductor and determine the strength of the current from the measured value.
第9図は従来の電流検出器の基本構成を示す斜視図、第
lO図は他の従来技術による電流検出器の基本構成を示
す斜視図である。FIG. 9 is a perspective view showing the basic structure of a conventional current detector, and FIG. 10 is a perspective view showing the basic structure of another conventional current detector.
第9図は、導線1に流れる電流iが作る磁界をカットコ
ア2で受け、磁電変換素子3により該磁界の強さを測定
し、その測定から導線1に流れる電流iの強さを知るこ
とができる。FIG. 9 shows that the cut core 2 receives the magnetic field created by the current i flowing through the conductor 1, the strength of the magnetic field is measured by the magnetoelectric transducer 3, and the strength of the current i flowing through the conductor 1 is determined from the measurement. I can do it.
第10図は、導体4に電流iを流したとき、コ字形に形
成した導体4の中間部4aに生じる磁界を磁電変換素子
5が直接に受ける構成であり、該磁界の強さから導体4
に流れる電流iの強さを知る構成であり、コ字形中間部
4aおよび磁電変換素子5は、外部磁界に影響されない
ように破線で示すシールドケース6に収容される。FIG. 10 shows a configuration in which, when a current i is passed through the conductor 4, the magnetoelectric transducer 5 directly receives the magnetic field generated in the middle part 4a of the conductor 4 formed in a U-shape.
The U-shaped intermediate portion 4a and the magnetoelectric transducer 5 are housed in a shield case 6 shown by broken lines so as not to be affected by external magnetic fields.
〔発明が解決しようとする課題]
前述の従来技術において、カットコア2を使用するもの
は、被測定電流iの流れる導線1がカットコア2をを貫
通する構成であるため、プリント配線板に表面実装でき
ないという問題点があり、中間部4aをコ字形に形成し
た導綿4に被測定電流iが流れるようにしたものは、カ
ットコア2を使用したものより小形化できるが、表面実
装用としては他の実装回路部品より大形になるという問
題点があり、表面実装用の小型電流検出器にはかかる問
題点の解決が必要である。[Problem to be Solved by the Invention] In the above-mentioned conventional technology, the one using the cut core 2 has a configuration in which the conductor 1 through which the current to be measured passes through the cut core 2, so that the printed wiring board has no surface area. There is a problem that it cannot be mounted, and the one in which the current to be measured i flows through the conductor 4 whose intermediate part 4a is formed into a U-shape can be made smaller than the one using the cut core 2, but it is not suitable for surface mounting. There is a problem in that the current detector is larger than other mounted circuit components, and it is necessary to solve this problem in a small current detector for surface mounting.
第1図は本発明による電流検出器の基本構成図である。 FIG. 1 is a basic configuration diagram of a current detector according to the present invention.
第1図において、電流検出器11は被測定電流iが所定
方向に流れる導体層を有する基仮12の上面の絶縁層1
3の上に、該導体層に流す被測定電流iによって該上面
と平行方向に発生する被測定磁界Hkを磁電変換する磁
電変換素子14を、該導体層と電気的絶縁状態で搭載し
、
被測定磁界Hkと直交方向のバイアス磁界Hbを磁電変
換素子14に与えるバイアス磁界発生手段15を配設し
、
少なくとも基仮l2と磁電変換素子14とバイアス磁界
発生手段15とを、外部磁界遮断用シールドケース16
に収容してなることを特徴とし、そして、前記導体層が
金属板であり、基板12が該金属板の上面に絶縁層13
を設け、絶縁層13の上に少なくとも磁電変換素子14
を搭載してなることを特徴とする、
または、前記導体層が被測定電流iを流したとき前記基
板上面に対し平行方向の被測定磁界Hkを発生せしめる
一対のコイル部を具え、基板12が絶縁板の上に一対の
該コイル部を具えた該導体層を具え、
磁電変換素子14が一対の該コイル部の対向間に搭載さ
れてなることを特徴とする、
さらに、磁電変換素子14の形成基板に、磁電変換素子
14の出力を増幅する増幅器を少なくとも具えた回路素
子を形成してなることを特徴とし構成する。In FIG. 1, a current detector 11 includes an insulating layer 1 on the upper surface of a substrate 12 having a conductor layer through which a current i to be measured flows in a predetermined direction.
A magnetoelectric conversion element 14 for magnetoelectrically converting a magnetic field to be measured Hk generated in a direction parallel to the upper surface by a current to be measured i flowing through the conductor layer is mounted on the conductor layer in an electrically insulated state from the conductor layer. A bias magnetic field generating means 15 is provided to apply a bias magnetic field Hb in a direction orthogonal to the measurement magnetic field Hk to the magnetoelectric transducer 14, and at least the base 12, the magnetoelectric transducer 14, and the bias magnetic field generating means 15 are protected by a shield for blocking external magnetic fields. case 16
The conductor layer is a metal plate, and the substrate 12 has an insulating layer 13 on the upper surface of the metal plate.
is provided, and at least a magnetoelectric transducer 14 is provided on the insulating layer 13.
Alternatively, the conductor layer includes a pair of coil portions that generate a magnetic field to be measured Hk in a direction parallel to the upper surface of the substrate when the current to be measured i flows therethrough, and the substrate 12 is The conductive layer having the pair of coil portions is provided on an insulating plate, and the magnetoelectric conversion element 14 is mounted between the pair of coil portions facing each other. The structure is characterized in that a circuit element including at least an amplifier for amplifying the output of the magnetoelectric conversion element 14 is formed on the formation substrate.
上記手段によれば、基板に設けた導体層に被測定電流を
流し、該被測定電流によって該基板の上面と平行方向に
発生する被測定磁界を、該基板の上面に搭載した磁電変
換素子で検出する構成したことにより、各種回路素子と
同等にプリント配線板へ搭載可能な小型電流検出器を実
現し、各種回路に電流検出器の組み込みが可能になった
。According to the above means, a current to be measured is passed through a conductor layer provided on a substrate, and a magnetic field to be measured generated by the current to be measured is generated in a direction parallel to the top surface of the substrate using a magnetoelectric transducer mounted on the top surface of the substrate. By adopting a detection configuration, we have realized a compact current detector that can be mounted on printed wiring boards in the same way as various circuit elements, making it possible to incorporate the current detector into various circuits.
以下に、図面を用いて本発明による電流検出器を説明す
る.
第2図は本発明の第1の実施例による電流検出器の主要
構成を模式的に示す断面図(イ)と該電流検出器の基板
に搭載した搭載素子の配置を示す平面図(0)、第3図
は第2図に示す電流検出器の回路図、第4図は第2図に
示す電流検出器の主要製造工程を説明するための図であ
る。The current detector according to the present invention will be explained below using the drawings. FIG. 2 is a cross-sectional view (A) schematically showing the main structure of the current detector according to the first embodiment of the present invention, and a plan view (0) showing the arrangement of mounted elements mounted on the substrate of the current detector. , FIG. 3 is a circuit diagram of the current detector shown in FIG. 2, and FIG. 4 is a diagram for explaining the main manufacturing process of the current detector shown in FIG. 2.
第1図と共通部分に同一符号を使用した第2図の電流検
出器21において、基板12は金属板(導体層)22の
上面に絶縁層13を形成し、絶縁層13の上に導体パタ
ーン23と外部接続用の端子24と搭載ステージ25と
を形成してなり、一対の搭載ステージ25の上に磁電変
換素子14,磁電変換素子14の出力を増幅する回路素
子27が搭載される。In the current detector 21 shown in FIG. 2, in which the same reference numerals are used for parts common to those in FIG. 23, an external connection terminal 24, and a mounting stage 25, and a magnetoelectric transducer 14 and a circuit element 27 for amplifying the output of the magnetoelectric transducer 14 are mounted on the pair of mounting stages 25.
要部が表呈するように絶縁JllW26の形成された導
体パターン23と磁電変換素子14.要部が表呈するよ
うに絶縁層26の形成された端子24と回路素子27と
は、金属ワイヤ28によってそれぞれ接続したのち、磁
電変換素子14等を封止材29にて封止し、次いで金属
板22の下面に配設したバイアス磁界Hb印加用の永久
磁石(バイアス磁・界発生手段)15と共にモールド部
材30にて封止し、それらは磁性材料にてなるシールド
ケース31に収容される。The conductor pattern 23 with the insulating JllW 26 formed thereon and the magnetoelectric transducer 14. The terminal 24 on which the insulating layer 26 is formed and the circuit element 27 are connected to each other by a metal wire 28 so that the main parts are exposed, and then the magnetoelectric transducer 14 etc. are sealed with a sealing material 29, and then the metal It is sealed with a mold member 30 together with a permanent magnet (bias magnetic/field generating means) 15 for applying a bias magnetic field Hb disposed on the lower surface of the plate 22, and these are housed in a shield case 31 made of a magnetic material.
このような電流検出器21は、第2図(口)に示すよう
に被測定電流iを金属板22の左端から右端に向けて流
すと、基板12の上面には該上面と平行かつ基板12の
幅方向の被測定磁界Hkが発生し、磁界Hkと同方向の
磁界を検出するように搭載し永久磁石15によって磁界
Hkと直交方向のバイアス磁界Hbの与えられた磁電変
換素子14が磁界Hkを検出し、回路素子27に増幅さ
れた磁電変換素子14の出力は、出力端子24より取り
出されるようになる。In such a current detector 21, when a current to be measured i is passed from the left end to the right end of the metal plate 22 as shown in FIG. A magnetic field Hk to be measured in the width direction is generated, and the magnetoelectric transducer 14, which is mounted so as to detect a magnetic field in the same direction as the magnetic field Hk and is given a bias magnetic field Hb in a direction perpendicular to the magnetic field Hk by a permanent magnet 15, converts the magnetic field Hk. The output of the magnetoelectric conversion element 14 detected and amplified by the circuit element 27 is taken out from the output terminal 24.
第3図において、フルブリッジに構成しバイアス磁界H
bの与えられた磁電変換素子14の出力端子は、差動増
幅器32等を具えた回路素子27に接続し、磁電変換素
子l4の一対の入力端子33の間には、定電流源,電流
計が接続される。バイアス磁界Hbと直角方向の被測定
磁界Hvが与えられて発生する磁電変換素子14の出力
は、回路素子27を通って例えば100倍に増幅され、
出力端子24に接続されたデジタルマルチメータやX−
Yレコーダ等にて、測定および記録されるようになる。In Figure 3, the bias magnetic field H is configured as a full bridge.
The output terminal of the magnetoelectric conversion element 14 given b is connected to a circuit element 27 including a differential amplifier 32, etc., and a constant current source and an ammeter are connected between the pair of input terminals 33 of the magnetoelectric conversion element l4. is connected. The output of the magnetoelectric transducer 14 generated by applying the magnetic field to be measured Hv in the direction perpendicular to the bias magnetic field Hb is amplified by a factor of 100, for example, through the circuit element 27.
A digital multimeter or X- connected to the output terminal 24
It will be measured and recorded using a Y recorder or the like.
第4図(イ)〜(二)において、金属板22の上面に絶
縁層13と導体膜34を被着したのち、導体膜34の不
要部をエッチング除去して導体パターン23と端子24
とステージ25とを形成し、導体パターン23と端子2
4は金属ワイヤ28の接続部を残し絶縁層26にて被覆
する。次いで、一対のステージ25に磁電変換素子14
と回路素子27とを搭載したのち、各導体パターン23
の一端と磁電変換素子17および、各導体パターン23
の他端と回路素子27ならびに、端子24と回路素子2
7とを金属ワイヤ28にて接続する。4(a) to (2), after the insulating layer 13 and the conductor film 34 are deposited on the upper surface of the metal plate 22, unnecessary parts of the conductor film 34 are removed by etching, and the conductor pattern 23 and the terminal 24 are removed.
and a stage 25, and a conductive pattern 23 and a terminal 2.
4, the connecting portion of the metal wire 28 is left and covered with an insulating layer 26. Next, the magnetoelectric transducer 14 is mounted on the pair of stages 25.
After mounting the and circuit elements 27, each conductor pattern 23
one end, the magnetoelectric conversion element 17 and each conductor pattern 23
The other end and the circuit element 27 and the terminal 24 and the circuit element 2
7 with a metal wire 28.
しかるのち、金属板22の上面に封止材29を形成し、
金属板22の下面に永久磁石(または薄膜構成の磁石)
15を接着したのち、それらは第2図に示すようにモー
ルド部材30で覆われるようになる。After that, a sealing material 29 is formed on the upper surface of the metal plate 22,
A permanent magnet (or a magnet with a thin film structure) is attached to the bottom surface of the metal plate 22.
After gluing 15, they are covered with a mold member 30 as shown in FIG.
第5図は本発明の第2の実施例による電流検出器の主要
構成を模式的に示す断面図、第6図は第3の実施例に係
わる基板の平面図(イ)とその断面図(Iff)、第7
図は第4の実施例に係わる基板の平面図(イ)とその断
面図(口)である。FIG. 5 is a sectional view schematically showing the main structure of a current detector according to a second embodiment of the present invention, and FIG. 6 is a plan view (A) and a sectional view (A) of a substrate according to a third embodiment. If), 7th
The figures are a plan view (a) and a cross-sectional view (opening) of a substrate according to the fourth embodiment.
前出図と共通部分に同一符号を使用した第5図において
、電流検出器41の基板12は金属板22の上面に絶縁
板42を接着し、絶縁Jli42の上に導体パターン2
3と外部接続用の端子24と搭載ステージ25とを形成
してなり、一対の搭載ステージ25の上に磁電変換素子
14,磁電変換素子14の出力を増幅する回路素子27
が搭載される。In FIG. 5, in which the same reference numerals are used for parts common to the previous figure, the substrate 12 of the current detector 41 has an insulating plate 42 glued to the upper surface of the metal plate 22, and a conductive pattern 2 on the insulating Jli 42.
3, a terminal 24 for external connection, and a mounting stage 25. On the pair of mounting stages 25, there is a magnetoelectric transducer 14 and a circuit element 27 for amplifying the output of the magnetoelectric transducer 14.
will be installed.
要部が表呈するように絶縁層26の形成された導体パタ
ーン23と磁電変換素子14,要部が表呈するように絶
縁層26の形成された端子24と回路素子27とは、金
属ワイヤ28によってそれぞれ接続したのち、磁電変換
素子14等を封止材29にて封止し、次いで磁電変換素
子14の上方にバイアス磁界HbO印加用永久磁石(ま
たは薄膜磁石)15を位置せしめてモールド部材30を
形成し、それらは磁性材料にてなるシールドケース31
に収容される。The conductor pattern 23 and the magnetoelectric transducer 14 on which the insulating layer 26 is formed so that the main part is exposed, and the terminal 24 and the circuit element 27 on which the insulating layer 26 is formed so that the main part is exposed are connected by a metal wire 28. After each connection is made, the magnetoelectric transducer 14 and the like are sealed with a sealing material 29, and then a permanent magnet (or thin film magnet) 15 for applying a bias magnetic field HbO is positioned above the magnetoelectric transducer 14, and the mold member 30 is sealed. A shield case 31 made of a magnetic material is formed.
be accommodated in.
第6図において、基仮12は絶縁板45の上面に導体層
46を形成してなる。導体層46は一対のコイル部46
a,46bと端子46c, 46dを具えてなる。絶縁
層47をその厚さ方向に挟むように形成されたコイル部
46a.46bは、絶縁層47の下部に形成された導体
パターン46eと、絶縁層47の上部に形成された導体
パターン46fおよび端子46c, 46dとは、パイ
アホール46’gにより接続されている。In FIG. 6, the base 12 is formed by forming a conductor layer 46 on the upper surface of an insulating plate 45. As shown in FIG. The conductor layer 46 has a pair of coil parts 46
a, 46b and terminals 46c, 46d. A coil portion 46a is formed to sandwich the insulating layer 47 in its thickness direction. 46b, a conductive pattern 46e formed on the lower part of the insulating layer 47, a conductive pattern 46f formed on the upper part of the insulating layer 47, and the terminals 46c, 46d are connected through a via hole 46'g.
このような導体層46を具えた基仮12は、導体層46
に被測定電流iを流したとき、電流iにより発生する被
測定磁界Hkは、コイル部46a , 46b間に一点
鎖線で示す磁電変換素子搭載領域48において、基板1
2の上面と平行かつ基仮12の幅方向に発生し、その磁
界}{kは前述の金属板22のそれよりも大きくなる。The base 12 provided with such a conductor layer 46 is
When a current to be measured i is passed through the current i, a magnetic field to be measured Hk generated by the current i is applied to the substrate 1 in the magnetoelectric transducer mounting area 48 shown by the dashed line between the coil portions 46a and 46b.
2 and in the width direction of the base 12, and its magnetic field {k is larger than that of the metal plate 22 described above.
第6図と共通部分に同一符号を使用した第7図において
、基板12は絶縁板45の上面に導体N50を形成して
なる.導体層50は、絶縁板45の上面に形成した絶縁
層51の上に形成した一対の端子50a,50bと渦巻
状コイル部50c. 50dを具え、一対のコイル部5
0c. 50dの中心端は、絶It ii 51の下部
に形成した導体パターン50eによって接続される。In FIG. 7, in which the same reference numerals are used for parts common to those in FIG. 6, the substrate 12 has a conductor N50 formed on the upper surface of an insulating plate 45. The conductor layer 50 includes a pair of terminals 50a and 50b formed on an insulating layer 51 formed on the upper surface of an insulating plate 45, and a spiral coil portion 50c. 50d, a pair of coil parts 5
0c. The center end of 50d is connected by a conductor pattern 50e formed at the bottom of the bottom part 51.
このような導体Ji50を具えた基仮12は、導体層5
0に被測定電流iを流したとき、コイル部50cと50
dの中心部は極性(NとS)が逆になり、従ってコイル
部50bと50cの間に一点鎖線で示す磁電変換素子搭
載領域48において、基板12の上面と平行かつ基板1
2の幅方向に被測定磁界Hkが発生し、その磁界Hkは
前述の導体層46のそれより大きくすることが可能であ
る。The base 12 having such a conductor Ji 50 has a conductor layer 5
When the current to be measured i is passed through the coil parts 50c and 50
The polarity (N and S) is reversed in the central part of d, so that in the magnetoelectric transducer mounting area 48 shown by the dashed line between the coil parts 50b and 50c, the center part is parallel to the upper surface of the substrate 12 and is parallel to the upper surface of the substrate 12.
A magnetic field Hk to be measured is generated in the width direction of the conductor layer 2, and the magnetic field Hk can be made larger than that of the conductor layer 46 described above.
第8図は本発明の第5の実施例に係わり磁電変換素子と
回路素子を一体化した構成を模式的に示す平面図であり
、基板12に搭載される素子60は、シリコン等にてな
る素子基板61の上に、第3図に示すフルブリッジ構成
の磁電変換素子(磁気抵抗素子)14と、差動増幅器を
含む回路素子27とを形成し、磁電変換素子14と回路
素子27が導体パターン62で接続された構成である。FIG. 8 is a plan view schematically showing a configuration in which a magnetoelectric conversion element and a circuit element are integrated according to a fifth embodiment of the present invention, and an element 60 mounted on the substrate 12 is made of silicon or the like. On the element substrate 61, a magnetoelectric conversion element (magnetoresistive element) 14 with a full bridge configuration shown in FIG. This is a configuration in which they are connected in a pattern 62.
このような素子60は、磁電変換素子14と回路素子2
7を別々に構成したものより小型であり、従って第2図
および第5図の磁電変換素子14と回路素子27に変え
て素子60を搭載した電流検出器、第6図および第7図
の素子搭載領域48に素子60を搭載した電流検出器は
、磁電変換素子14と回路素子27を搭載したものより
小型となり、かつ、基vi12に搭載させる手間が少な
くて済む利点を有する。Such an element 60 is a combination of the magnetoelectric transducer 14 and the circuit element 2.
The current detector is smaller than the one in which the elements 7 are configured separately, and is therefore equipped with an element 60 in place of the magnetoelectric transducer 14 and circuit element 27 in FIGS. 2 and 5, and the element in FIGS. 6 and 7. The current detector in which the element 60 is mounted in the mounting area 48 has the advantage that it is smaller than one in which the magnetoelectric conversion element 14 and the circuit element 27 are mounted, and requires less effort to mount it on the base vi12.
以上説明したように本発明の電流検出器は、基板に設け
た導体層に被測定電流を流し、該被測定電流によって該
基板の上面と平行方向に発生する被測定磁界を、該基板
の上面に搭載した磁電変換素子で検出する構成したこと
により、プリント配線板に搭載可能な小型電流検出器を
実現し、各種回路への組み込みを可能にした効果を有す
る。As explained above, in the current detector of the present invention, a current to be measured is passed through a conductor layer provided on a substrate, and a magnetic field to be measured generated by the current to be measured is generated in a direction parallel to the top surface of the substrate. By configuring the current detector to be detected using a magneto-electric transducer mounted on the sensor, a compact current detector that can be mounted on a printed wiring board has been realized, making it possible to incorporate it into various circuits.
第1図は本発明の電流検出器の基本構成図、第2図は本
発明の第1の実施例による電流検出器、
第3図は第2図に示す電流検出器の回路図、第4図は第
2図に示す電流検出器の主要製造工程の説明図、
第5図は本発明の第2の実施例による電流検出器、
第6図は第3の実施例に係わる電流検出器の基板、
第7図は第4の実施例に係わる電流検出器の基板、
第8図は本発明の第5の実施例に係わる電流検出器の搭
載素子、
第9図は従来の電流検出器の基本構成図、第10図は他
の従来技術による電流検出器の基本構成図、
である.
図中において、
11は電流検出器、 l2は基板、
13は絶縁層、 14は磁電変換素子、15は磁
界発生手段(永久磁石)、
16はシールドケース、
22.46.50は導体層(金属板)、27は回路素子
、 45は絶縁板、46a, 46b, 50b,
50cはコイル部、61は素子基板、
Hbはバイアス磁界、
HKは被測定磁界、 iは被測定電流、を示す。
ワ
不発e月の電流検出器の蟇濠槙威図
% 1 図
多村2 5コCS 爪τ 彎シえ倹出器の5D玲図舅
3 図
杢発明の第1
の炙杷19リに二3電鷹検出器
メ
?
図
$発明ノIFl2 ノ’lt例I(よ!e流横1外第
5 回
男3の寒杷例に係わ1劃t検出器の蔓販纂 6 図
程の名免a8図
第
図
第
口
集
図FIG. 1 is a basic configuration diagram of the current detector of the present invention, FIG. 2 is a current detector according to the first embodiment of the present invention, FIG. 3 is a circuit diagram of the current detector shown in FIG. 2, and FIG. The figure is an explanatory diagram of the main manufacturing process of the current detector shown in Figure 2, Figure 5 is a current detector according to the second embodiment of the present invention, and Figure 6 is an illustration of the current detector according to the third embodiment. 7 shows the substrate of the current detector according to the fourth embodiment, FIG. 8 shows the mounted elements of the current detector according to the fifth embodiment of the present invention, and FIG. 9 shows the components of the conventional current detector. Basic configuration diagram. Figure 10 is a basic configuration diagram of a current detector according to another conventional technology. In the figure, 11 is a current detector, 12 is a substrate, 13 is an insulating layer, 14 is a magnetoelectric conversion element, 15 is a magnetic field generating means (permanent magnet), 16 is a shield case, 22, 46, 50 are conductor layers (metallic 27 is a circuit element, 45 is an insulating plate, 46a, 46b, 50b,
50c is a coil portion, 61 is an element substrate, Hb is a bias magnetic field, HK is a magnetic field to be measured, and i is a current to be measured. Wa unexploded e month's current detector's toad moat box map % 1 Figure Tamura 2 5 CS nail τ curvature detector's 5D Rei map
3. The first loquat 19 and 23 electric hawk detector method of the figure heather invention? Figure $ Invention IFl2 ノ'lt Example I (Yo! e style horizontal 1 outside number
5 General sales compilation of 1-t detector related to the loquat case of Otoko 3
Claims (4)
50)を有する基板(12)の上面に、該導体層(22
、46、50)に流す該被測定電流(i)によって該上
面と平行方向に発生する被測定磁界(HK)を磁電変換
する磁電変換素子(14)を、該導体層(22、46、
50)と電気的絶縁状態で搭載し、 該被測定磁界(Hk)と直交方向のバイアス磁界(Hb
)を該磁電変換素子(14)に与えるバイアス磁界発生
手段(15)を配設し、 少なくとも該基板(12)と磁電変換素子(14)とバ
イアス磁界発生手段(15)とを、外部磁界遮断用シー
ルドケース(16)に収容してなることを特徴とする電
流検出器。(1) Conductor layer (22, 46,
on the top surface of the substrate (12) having the conductor layer (22).
, 46, 50) is connected to the conductor layer (22, 46, 50).
50), and a bias magnetic field (Hb) in the direction perpendicular to the magnetic field to be measured (Hk).
) to the magnetoelectric transducer (14), and isolates at least the substrate (12), the magnetoelectric transducer (14), and the bias magnetic field generator (15) from external magnetic fields. A current detector characterized in that the current detector is housed in a shield case (16).
12)が該金属板導体層(22)の上面に絶縁層(13
)を設け、該絶縁層(13)の上に少なくとも前記磁電
変換素子(14)を搭載してなることを特徴とする前記
請求項1に記載の電流検出器。(2) The conductor layer (22) is a metal plate, and the substrate (
12) is an insulating layer (13) on the top surface of the metal plate conductor layer (22).
), and at least the magnetoelectric conversion element (14) is mounted on the insulating layer (13).
)を流したとき前記基板上面に対し平行方向の前記被測
定磁界を発生せしめる一対のコイル部(46a、46b
、50c、50d)を具え、 前記基板(12)が絶縁板(45)の上に一対の該コイ
ル部(46a、46b、50c、50d)を具えた該導
体層(46、50)を具え、 前記磁電変換素子(14)が一対の該コイル部(46a
、46b、50c、50d)の対向間に搭載されてなる
ことを特徴とする前記請求項1に記載の電流検出器。(3) The conductor layer (46, 50)
), which generates the magnetic field to be measured in a direction parallel to the upper surface of the substrate (46a, 46b).
, 50c, 50d), the substrate (12) comprising the conductor layer (46, 50) having the pair of coil portions (46a, 46b, 50c, 50d) on an insulating plate (45), The magnetoelectric transducer (14) is connected to the pair of coil portions (46a).
, 46b, 50c, 50d). 46b, 50c, 50d).
、該磁電変換素子(14)の出力を増幅する増幅器を少
なくとも具えた回路素子(27)を形成してなることを
特徴とする前記請求項1または2または3に記載の電流
検出器。(4) A circuit element (27) comprising at least an amplifier for amplifying the output of the magnetoelectric transducer (14) is formed on the substrate (61) on which the magnetoelectric transducer (14) is formed. The current detector according to claim 1, 2 or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1060034A JPH02238372A (en) | 1989-03-13 | 1989-03-13 | Current detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1060034A JPH02238372A (en) | 1989-03-13 | 1989-03-13 | Current detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02238372A true JPH02238372A (en) | 1990-09-20 |
Family
ID=13130385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1060034A Pending JPH02238372A (en) | 1989-03-13 | 1989-03-13 | Current detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02238372A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006514283A (en) * | 2003-02-11 | 2006-04-27 | アレグロ・マイクロシステムズ・インコーポレーテッド | Integrated sensor |
| JP2006112813A (en) * | 2004-10-12 | 2006-04-27 | Canon Electronics Inc | Current sensor and current detection unit using the same |
| JP2010256316A (en) * | 2009-04-27 | 2010-11-11 | Kohshin Electric Corp | Current sensor |
| JP2016537629A (en) * | 2013-11-15 | 2016-12-01 | エプコス アクチエンゲゼルシャフトEpcos Ag | Apparatus, arrangement and method for measuring current intensity in a primary conductor through which current flows |
| US9859489B2 (en) | 2006-01-20 | 2018-01-02 | Allegro Microsystems, Llc | Integrated circuit having first and second magnetic field sensing elements |
| US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
| US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
| US11994541B2 (en) | 2022-04-15 | 2024-05-28 | Allegro Microsystems, Llc | Current sensor assemblies for low currents |
-
1989
- 1989-03-13 JP JP1060034A patent/JPH02238372A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006514283A (en) * | 2003-02-11 | 2006-04-27 | アレグロ・マイクロシステムズ・インコーポレーテッド | Integrated sensor |
| US7518354B2 (en) | 2003-02-11 | 2009-04-14 | Allegro Microsystems, Inc. | Multi-substrate integrated sensor |
| JP2006112813A (en) * | 2004-10-12 | 2006-04-27 | Canon Electronics Inc | Current sensor and current detection unit using the same |
| US9859489B2 (en) | 2006-01-20 | 2018-01-02 | Allegro Microsystems, Llc | Integrated circuit having first and second magnetic field sensing elements |
| US10069063B2 (en) | 2006-01-20 | 2018-09-04 | Allegro Microsystems, Llc | Integrated circuit having first and second magnetic field sensing elements |
| JP2010256316A (en) * | 2009-04-27 | 2010-11-11 | Kohshin Electric Corp | Current sensor |
| JP2016537629A (en) * | 2013-11-15 | 2016-12-01 | エプコス アクチエンゲゼルシャフトEpcos Ag | Apparatus, arrangement and method for measuring current intensity in a primary conductor through which current flows |
| US10018656B2 (en) | 2013-11-15 | 2018-07-10 | Epcos Ag | Device, arrangement, and method for measuring a current intensity in a primary conductor through which current flows |
| US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
| US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
| US11994541B2 (en) | 2022-04-15 | 2024-05-28 | Allegro Microsystems, Llc | Current sensor assemblies for low currents |
| US12235294B2 (en) | 2022-04-15 | 2025-02-25 | Allegro MicroSystem, LLC | Current sensor assemblies for low currents |
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