JPH02238433A - light modulator - Google Patents

light modulator

Info

Publication number
JPH02238433A
JPH02238433A JP5773189A JP5773189A JPH02238433A JP H02238433 A JPH02238433 A JP H02238433A JP 5773189 A JP5773189 A JP 5773189A JP 5773189 A JP5773189 A JP 5773189A JP H02238433 A JPH02238433 A JP H02238433A
Authority
JP
Japan
Prior art keywords
crystal
voltage
electro
optic
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5773189A
Other languages
Japanese (ja)
Inventor
Chuichi Miyazaki
忠一 宮崎
Hiroyuki Sugawara
弘之 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5773189A priority Critical patent/JPH02238433A/en
Publication of JPH02238433A publication Critical patent/JPH02238433A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電気光学結晶を使って光の位相を制御する光変
調装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light modulation device that uses an electro-optic crystal to control the phase of light.

〔従来の技術〕[Conventional technology]

従来の電気光学結晶を用いた光変調装置では、結晶の温
度特性を補償するためにO plus E 1987年
2月号(Na87)r光学結晶の使い方(大野豊・中山
厚)」等に記載のように、形状の等しい同一結晶2本を
用い光軸に対して結晶の軸を90”回転させるように構
成していた.このような従来例の一例を第3図に示す構
成において簡単に説明する。
In optical modulators using conventional electro-optic crystals, in order to compensate for the temperature characteristics of the crystals, the method described in O plus E February 1987 issue (Na87) How to Use Optical Crystals (Yutaka Ohno and Atsushi Nakayama), etc. As shown in FIG. do.

第3図において6は電気光学結晶、12は6に対して結
晶軸を90゜回転させた電気光学結晶で11は直線偏光
レーザ光である.電気光学結晶は、電圧を印加すること
により2つの結晶軸方向,つまり光軸(Y軸)に垂直な
2方向のうち印加電圧に平行な方向(Z軸)と、印加電
圧に垂直な方向(X軸)の屈折率を異なる割合で変える
ことが可能な結晶である。垂直方向と水平方向の屈折率
が異なり垂直方向の屈折率をnp,水平方向の屈折率を
nsとするとP偏光の結晶中の光路長Qp及びS偏光の
結晶中の光路長Qsは結晶の物理的長さをaとすると次
のようになる. Q p ” n p Q             ・
・・(1)Qs=nsQ             −
(2)これより明らかなようにレーザ光の光路長が異な
るとS偏光とP偏光との間に位相差が生じる。
In FIG. 3, 6 is an electro-optic crystal, 12 is an electro-optic crystal whose crystal axis is rotated by 90 degrees with respect to 6, and 11 is a linearly polarized laser beam. By applying a voltage, an electro-optic crystal can be moved in two crystal axis directions: one direction parallel to the applied voltage (Z-axis) out of two directions perpendicular to the optical axis (Y-axis), and the other direction perpendicular to the applied voltage (Z-axis). It is a crystal that can change the refractive index (X-axis) at different rates. If the refractive index in the vertical and horizontal directions is different, and the refractive index in the vertical direction is np and the refractive index in the horizontal direction is ns, the optical path length Qp in the crystal for P-polarized light and the optical path length Qs in the crystal for S-polarized light are determined by the physics of the crystal. Letting the target length be a, it becomes as follows. Q p ” n p Q ・
...(1) Qs=nsQ −
(2) As is clear from this, when the optical path lengths of the laser beams are different, a phase difference occurs between the S-polarized light and the P-polarized light.

つまり電気光学結晶6は印加する電圧によってP,S間
偏光の間の位相差を制御することができる光学素子であ
る.このとき印加電圧Vにより発生する位相差φは ・・・(3) と表わされる。ここで式(3)の第一項は自然屈折で消
光比の劣化をきたし、温度による出方の変動をもたらす
ので除去する必要がある.これを補償するために結晶軸
を90゜回転させた電気光学結晶12にレーザ光を通す
ことにより位相差φは自然複屈折による位相を打ち消し
て次のようになる.λ             λ d 2π  a      s     Qλ      
        d このように、電気光学結晶に電圧を印加するとその大き
さに比例して、偏光面が互いに直交する2つのレーザ光
の間の位相差を変化させることができ、例えば正弦波状
の電圧を印加するとその振幅及び周波数に応じて光の位
相差に変調をかけることができる6 電気光学結晶の感度は、一般には位相差πを発生させる
のに必要な電圧Vπ(これを半波長電圧とよぶ)で表わ
し、第3図の構成においてはVπは 2(neraa−norzg)Q で表わされる.(5)式から明らかようにVπは結晶の
形状、つまり光軸方向の長さQと、印加電圧方向の厚さ
dに依存するほか,参考文献中の表3に示すように結晶
の使い方、つまり光軸及び電圧印加軸の選び方でも大き
く異なる。第3図の構成はいくつかある使い方のうちで
も最も感度の高い使用例である. 〔発明が解決しようとする課題〕 上記従来技術においては、印加電圧に比例して直交する
2つの直線偏光間の位相差を変化させられることを示し
たが、最も高感度の使い方である第3図の例でさえ、π
程度の位相差を発生させるのに一般には高い電圧が必要
であり、例えば結晶寸法として の場合でも■πは数百ボルトにも及び、高電圧の結晶駆
動増幅器で必要となっていた。
In other words, the electro-optic crystal 6 is an optical element that can control the phase difference between P and S polarized light by applying a voltage. At this time, the phase difference φ generated by the applied voltage V is expressed as (3). Here, the first term in equation (3) must be removed because it degrades the extinction ratio due to natural refraction and causes variations in the output depending on temperature. To compensate for this, by passing the laser beam through the electro-optic crystal 12 whose crystal axis has been rotated by 90 degrees, the phase difference φ cancels out the phase due to natural birefringence and becomes as follows. λ λ d 2π a s Qλ
d In this way, when a voltage is applied to an electro-optic crystal, the phase difference between two laser beams whose polarization planes are orthogonal to each other can be changed in proportion to the magnitude of the voltage. For example, when a sinusoidal voltage is applied, Then, the phase difference of light can be modulated according to its amplitude and frequency.6 The sensitivity of an electro-optic crystal is generally determined by the voltage Vπ required to generate a phase difference π (this is called a half-wave voltage). In the configuration shown in FIG. 3, Vπ is expressed as 2(neraa-norzg)Q. As is clear from equation (5), Vπ depends on the shape of the crystal, that is, the length Q in the optical axis direction and the thickness d in the applied voltage direction. In other words, the selection of the optical axis and voltage application axis also differs greatly. The configuration shown in Figure 3 is the most sensitive usage example out of several. [Problems to be Solved by the Invention] In the above-mentioned conventional technology, it has been shown that the phase difference between two orthogonal linearly polarized lights can be changed in proportion to the applied voltage. Even in the example in the figure, π
In general, a high voltage is required to generate a phase difference of a certain degree; for example, even in terms of crystal size, ■π can reach several hundred volts, which is necessary for high-voltage crystal drive amplifiers.

本発明の目的は、増幅器等を使用せずに発振器や電源な
どの電圧レベルでπ〜2π程度の振幅の位相変調゛を可
能にする高感度の電気光学結晶を提供することにある. 〔課題を解決するための手段〕 上記目的を達成するために、電気光学結晶を電圧印加軸
方向に薄くカットし、交互に軸方向を逆にしてさらに電
極を正負交互に配置した積層型構造としたものである。
An object of the present invention is to provide a highly sensitive electro-optic crystal that enables phase modulation with an amplitude of about π to 2π at the voltage level of an oscillator or power supply without using an amplifier or the like. [Means for solving the problem] In order to achieve the above object, we created a stacked structure in which an electro-optic crystal is cut thinly in the direction of the voltage application axis, the axial direction is alternately reversed, and electrodes are arranged alternately between positive and negative. This is what I did.

〔作用〕[Effect]

電気光学結晶の感度、つまり半波長電圧Vπは結晶内の
電界強度及び有効長さによって決まる。
The sensitivity of an electro-optic crystal, ie the half-wave voltage Vπ, is determined by the electric field strength and effective length within the crystal.

従って光軸方向の結晶長さQが長いほど、また電圧印加
方向の厚さdがうすいほど感度は高くなる。
Therefore, the longer the crystal length Q in the optical axis direction and the thinner the thickness d in the voltage application direction, the higher the sensitivity.

しかしこのために長さdをかせぐと、変調器自体の大き
さが大きくなり過ぎて使い勝手が悪くなるので限度があ
り、また厚さdをうずくするにはレーザのビームが通る
程度という限界がある。そこで本発明による見かけ上う
ずくで電界強度の大きな結晶を複数重ね合わせて有効面
積も損うことなしに高感度の電気光学結晶を実現するこ
とができる。
However, if the length d is increased for this purpose, there is a limit because the modulator itself becomes too large and becomes inconvenient to use, and there is also a limit to the extent to which the laser beam can pass through the thickness d. . Therefore, according to the present invention, a highly sensitive electro-optic crystal can be realized without deteriorating the effective area by stacking a plurality of apparently tingling crystals with large electric field strength.

〔実施例〕〔Example〕

以下、本発明の一実施例を第1図及び第2図を用いて説
明する. 第1図は本発明の概要を示す構成図であり、第2図は第
1図の組み立て方を説明するための分解図である.両図
とも構成部品は全く同一で次に示すとおりである.1は
結晶に電界(電圧)を印加するための結晶駆動電源.2
,3,4.5は電気光学結晶、6,7,8,9.10は
電圧印加用の電極、11は変調をかけるためのレーザ光
である。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is a configuration diagram showing an overview of the present invention, and FIG. 2 is an exploded view for explaining how to assemble the device shown in FIG. The components in both figures are exactly the same and are shown below. 1 is a crystal driving power supply for applying an electric field (voltage) to the crystal. 2
, 3, 4.5 are electro-optic crystals, 6, 7, 8, 9.10 are electrodes for voltage application, and 11 is a laser beam for modulation.

まず第2図により,本発明を実現するにあたっての組み
立て方を説明する.本実施例の場合には図に示すように
結晶のY軸方向に光を通し、Z軸方向に電圧を印加する
高感度の使用例である。本実施例では電気光学結晶を電
圧印加方向に4分割にスライスした使用例であり、それ
ぞれの結晶を2〜5としている。それぞれの結晶はまた
元のように積層して組み立てて使用するが、このとき、
交互に電圧印加軸方向を逆にして重ね合わせる.つまり
結晶2,4はZ軸の正方向が図中で上方を向いているの
に対し、結晶3,5ではZ軸の正方向が下方を向くよう
に配置してある。さらに、各結晶の間及び両端には電極
をやはり正負交互に配置する。電極6,8.10は正電
極,電極7,9は負電極である。本実施例の場合は電極
として薄板にリード線を付けて結晶の間にはさんで使用
しているが、例えばこのような構成でなく結晶の両側に
銅や金などの金属を蒸着してその端部にリード線を付け
るような構成でもよい.いずれにしても、この構成によ
り全ての(4本の)結晶には、Z軸の正から負の向きに
等しい電圧を印加することができ,さらに全ての結晶の
厚さを等しく加工することにより全ての結晶のZ軸の正
から負の向きに等しい電界を発生させることができる。
First, with reference to Figure 2, we will explain how to assemble the device to realize the present invention. In the case of this embodiment, as shown in the figure, light is passed through the crystal in the Y-axis direction and a voltage is applied in the Z-axis direction, which is a high-sensitivity usage example. In this example, an electro-optic crystal is sliced into four parts in the direction of voltage application, and each crystal is divided into 2 to 5 parts. The individual crystals are then stacked and assembled in the same way as before, but at this time,
Alternately overlap each other with the voltage application axis direction reversed. That is, the crystals 2 and 4 are arranged so that the positive direction of the Z axis points upward in the figure, whereas the crystals 3 and 5 are arranged so that the positive direction of the Z axis points downward. Further, electrodes are alternately arranged between positive and negative electrodes between each crystal and at both ends thereof. Electrodes 6, 8, 10 are positive electrodes, and electrodes 7, 9 are negative electrodes. In this example, a lead wire is attached to a thin plate as an electrode and used by sandwiching it between the crystals, but instead of this configuration, for example, a metal such as copper or gold is deposited on both sides of the crystal. It may also be configured with a lead wire attached to the end. In any case, with this configuration, it is possible to apply an equal voltage to all (four) crystals from the positive to the negative direction of the Z axis, and by processing all the crystals to have the same thickness. An equal electric field can be generated in the positive to negative direction of the Z-axis of all crystals.

本実施例によれば、結晶内では均一な強い電界が発生し
、例えばレーザビーム11を通してやれば、レーザ光は
その断面において4本の結晶中を分かれて進むが全ての
結晶においてレーザ光は全く同じ量の位相変調を受ける
ので、この結晶を通った光はあたかも均一の結晶を通っ
た1つの光とみなせる.但しこの場合にある印加電圧に
対して従来例の4倍(結晶の分割数倍)の電界強度が得
られるので、本発明の構成の電気光学結晶では従来のも
のに比較して4倍(結晶の分割数倍)の感度が得られる
効果がある。
According to this embodiment, a uniform strong electric field is generated within the crystal, and for example, when the laser beam 11 is passed through, the laser beam separates and travels through four crystals in its cross section, but the laser beam does not pass through all the crystals at all. Since it receives the same amount of phase modulation, the light passing through this crystal can be regarded as one light passing through a uniform crystal. However, in this case, an electric field strength four times (times the number of crystal divisions) as in the conventional example can be obtained for a given applied voltage, so the electro-optic crystal with the configuration of the present invention has an electric field strength four times as large as that in the conventional example (the number of crystal divisions). This has the effect of obtaining a sensitivity of (multiple the number of divisions).

〔発明の効果〕〔Effect of the invention〕

本発明によれば、従来の電気光学結晶の電圧印加方向の
寸法をn分割(n:整数)することにより結晶内部の電
界強度をn倍にすることができるので、この結晶を使っ
た光変調器の感度をn倍に大きくする効果がある。つま
りある位相景を発生させるのに1 / nの電圧で済む
ことになる。
According to the present invention, by dividing the dimension of a conventional electro-optic crystal in the voltage application direction into n parts (n: an integer), the electric field strength inside the crystal can be increased by n times. This has the effect of increasing the sensitivity of the instrument by n times. In other words, a voltage of 1/n is required to generate a certain phase scene.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は本発明の実施例の概要を示す構成図
,第3図は従来例を示す構成図である61・・・結晶駆
動電源、2,3,4,5.12・・・電気光学結晶、6
,7,8,9.10・・・電極、11・・・レーザビー
ム。
1 and 2 are block diagrams showing an outline of an embodiment of the present invention, and FIG. 3 is a block diagram showing a conventional example. 61...Crystal drive power supply, 2, 3, 4, 5. ...Electro-optic crystal, 6
, 7, 8, 9. 10... Electrode, 11... Laser beam.

Claims (1)

【特許請求の範囲】[Claims] 1、電気光学効果を有する電気光学結晶と、この結晶に
電圧を印加するための電極と電源とからなる光変調器に
おいて、電気光学結晶の電圧印加、方向の寸法を等分割
に切り分け、電圧印加方向の結晶が持つ固有軸の向き(
正、負)が全て互いに対向するように並べ、また各結晶
をはさむようにかつ極性を交互に電極を配置してこれら
を密着させることにより、結晶の感度をその分割数倍化
したことを特徴とする光変調器。
1. In an optical modulator consisting of an electro-optic crystal having an electro-optic effect, electrodes and a power source for applying a voltage to this crystal, applying a voltage to the electro-optic crystal, dividing the dimension into equal parts in the direction, and applying the voltage. The orientation of the eigenaxis of the crystal in the direction (
The sensitivity of the crystal is doubled by the number of divisions, by arranging the positive and negative electrodes so that they all face each other, and placing electrodes with alternating polarity between each crystal, and bringing them into close contact. optical modulator.
JP5773189A 1989-03-13 1989-03-13 light modulator Pending JPH02238433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5773189A JPH02238433A (en) 1989-03-13 1989-03-13 light modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5773189A JPH02238433A (en) 1989-03-13 1989-03-13 light modulator

Publications (1)

Publication Number Publication Date
JPH02238433A true JPH02238433A (en) 1990-09-20

Family

ID=13064069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5773189A Pending JPH02238433A (en) 1989-03-13 1989-03-13 light modulator

Country Status (1)

Country Link
JP (1) JPH02238433A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011197554A (en) * 2010-03-23 2011-10-06 Dainippon Screen Mfg Co Ltd Optical modulation device and exposure device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011197554A (en) * 2010-03-23 2011-10-06 Dainippon Screen Mfg Co Ltd Optical modulation device and exposure device

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