JPH0225078A - Photovoltaic device and manufacture thereof - Google Patents
Photovoltaic device and manufacture thereofInfo
- Publication number
- JPH0225078A JPH0225078A JP63174603A JP17460388A JPH0225078A JP H0225078 A JPH0225078 A JP H0225078A JP 63174603 A JP63174603 A JP 63174603A JP 17460388 A JP17460388 A JP 17460388A JP H0225078 A JPH0225078 A JP H0225078A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- sic
- forming
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000007789 gas Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 （（）産業上の利用分野 本発明は光起電力装置及びその製造方法に関する。[Detailed description of the invention] (() Industrial application field The present invention relates to a photovoltaic device and a method for manufacturing the same.
（ロ）従来の技術
非晶質シリコン（ａ−Ｓｉ）を用いた光起電力装置は、
通常ｐ −ｊ、 −ｎ接合を備え、２層側がこのために
、ｐ層としては、できるだけ入射光を吸収することなく
透過させるのが好ましく、従って、非晶質シリコンカー
バイド（ａ−ＳｉＣ）が用いられる。(b) Conventional technology A photovoltaic device using amorphous silicon (a-Si)
Normally, p-j, -n junctions are provided, and for this reason, it is preferable for the p-layer to transmit as much incident light as possible without absorbing it. Therefore, amorphous silicon carbide (a-SiC) is used as the p-layer. used.
しかし乍ら、この場合、ａ−ＳｉＣからなるｐ層とａ−
Ｓｉからなるｉ層との界面で光キャリアの再結合が多く
発生し、光電変換効率の向上を妨げている。However, in this case, the p layer made of a-SiC and the a-
Many recombinations of photocarriers occur at the interface with the i-layer made of Si, which impedes improvement in photoelectric conversion efficiency.
そこで、Ｊｏｕｒｎａｌ＾ｐｐｌｉｅｄ Ｐｈｙｓｉｃ
ｓ ５６ （２）。Therefore, Journal＾pplied Physics
s 56 (2).
１５ ＪｕｌＦ １９８４のＰ５３８〜Ｐ５４２によ
れば、ａ−ＳｉＣからなるｐ層とａ−Ｓｉからなるｉ層
との間に、ｐ型からｉ層へ向かって炭素濃度が漸減する
グレイデッドなａ ＳｉＣからなるｐ型のバッファ層
を介在させることにより、光キｔハＪ＃ｌＰｇｅ力）解
法しぶつとＴる課題ところで、上述のバッファ層はａ−
ＳｔＣからなる２層を形成した後、引き続いて、同じ反
応室で形成されるために、必然的に少なくとも２×１０
′７（ａｔｍ／ｃｍ’）程度のホウ素原子を含有した
ｐ型となる。According to P538 to P542 of 15 JulF 1984, from graded a-SiC where the carbon concentration gradually decreases from the p-type to the i-layer between the p-layer made of a-SiC and the i-layer made of a-Si. By intervening a p-type buffer layer, the above-mentioned buffer layer can be solved by interposing a p-type buffer layer.
After forming two layers of StC, at least 2 × 10
It becomes a p-type containing about 7'(atm/cm') of boron atoms.
しかし乍ら、このホウ素原子が再結合中心となり、光電
変換効率が低下することがわかってきた。However, it has been found that this boron atom becomes a recombination center, resulting in a decrease in photoelectric conversion efficiency.
（ニ）課題を解決するための手段
本発明の光起電力装置は、ｐ型の非晶質ＳｉＣ層とｉ型
の非晶質Ｓｉ層との間に、ホウ素濃度がＩ Ｘ １０１
７（ａｔｍ／ａｍ’） 以下の非晶質ＳｉＣ層を介挿
したことを特徴とする。(d) Means for Solving the Problems The photovoltaic device of the present invention has a boron concentration of I x 101 between the p-type amorphous SiC layer and the i-type amorphous Si layer.
It is characterized by interposing an amorphous SiC layer of 7 (atm/am') or less.
更に、本発明の光起電力装置の製造方法は、ｐ型の非晶
質ＳｉＣ層を第１反応室で形成する工程と、ホウ素濃度
がＩ Ｘ １０ ′７（ａｔｅ／ｃｍ’）以下の非晶質
ＳｉＣ層を上記第１反応室と異なる第２反応室で形成す
る工程と、ｉ型の非晶質Ｓｉ層を上記第１反応室及び第
２反応室と異なる第３反応室で形成する工程とを備えた
ことを特徴とする。Furthermore, the method for manufacturing a photovoltaic device of the present invention includes a step of forming a p-type amorphous SiC layer in the first reaction chamber, and a step of forming a p-type amorphous SiC layer in a non-crystalline SiC layer with a boron concentration of I x 10'7 (ate/cm') or less. forming a crystalline SiC layer in a second reaction chamber different from the first reaction chamber; and forming an i-type amorphous Si layer in a third reaction chamber different from the first reaction chamber and the second reaction chamber. It is characterized by comprising a process.
（ホ）作 用
ａ−ＳｉＣからなる９層とａ−Ｓｉからなる１屑との間
に介挿されたホウ素濃度がｌ ｘ ｌ Ｑ １７（ａｔ
１／ｃｍ’） 以下のａ−ＳｉＣ層は、この部分での
光キャリアの再結合を減少させる６
（へ）実施例
第１図は本発明の一実施例を示す断面図である。（１）
はガラス基板、（２）はＩｎｚＯｓ、ＳｎＯ２゜ＩＴＯ
等の透光性導電酸化物からなる透明電極、（３）はＰ型
ａ−ＳｉＣ層、（４）はホウ素濃度がＩＸ １０ ”
（ａｔｍ／ｃｍ３） 以下のａ−ＳｉＣバッファ層、
（５）はｉ型ａ−Ｓｉ層、（６）はｎ型ａ−Ｓｉ層、（
７）は金属電極であり、これらはガラス基板（１）上に
積層されている。(E) Effect The boron concentration inserted between the nine layers of a-SiC and one scrap of a-Si is l x l Q 17 (at
1/cm') The following a-SiC layer reduces the recombination of photocarriers in this part.6 (f) Embodiment FIG. 1 is a sectional view showing an embodiment of the present invention. (1)
is a glass substrate, (2) is InzOs, SnO2゜ITO
(3) is a P-type a-SiC layer, and (4) is a transparent electrode made of a translucent conductive oxide such as IX 10''.
(atm/cm3) the following a-SiC buffer layer,
(5) is an i-type a-Si layer, (6) is an n-type a-Si layer, (
7) are metal electrodes, which are laminated on the glass substrate (1).
第２図は本発明の光起電力装置を製造するための製造装
置を示す概略図である。（１０）は予め透明電極が形成
された基板（１）を仕込む仕込み室、（１１）はｐ型ａ
−ＳｉＣ層（３ンを形成するための第１形成室、（１２
）はａ−ＳｉＣバッファ層（４）を形成するための第２
形成室、（１３）はｉ型ａ−Ｓｉ層（５）を形成するた
めの第３形成室、（１４）はｎ型ａこれら各層の形成条
件の一例は以下の通りである。FIG. 2 is a schematic diagram showing a manufacturing apparatus for manufacturing the photovoltaic device of the present invention. (10) is a preparation chamber for preparing the substrate (1) on which a transparent electrode has been formed in advance, and (11) is a p-type a
- a first formation chamber for forming a SiC layer (3), (12
) is the second layer for forming the a-SiC buffer layer (4).
A formation chamber (13) is a third formation chamber for forming an i-type a-Si layer (5), and (14) is an n-type a-Si layer. An example of the conditions for forming each of these layers is as follows.
〜（■５）を排気する排気口、（１６）は各室（１０）
〜（１５）の隔壁に設けられた開閉自在なシャッタ、（
１７）（１８）は第１〜第４形成室（１１）〜（１４）
内に配された平行平板電極、（１９）は平行平板型［！
（１７）夕（１８）に高周波電力を供給する高周波電
源、（２０）は第１形成室（１１）にＳ ｉ Ｈ４、Ｃ
Ｉ−（４、Ｂ （ＣＨ３）・、及びＨ２の混合ガスを供
給する第１ガス供給源、（２１）は第２形成室（１２）
にＳｉＨ４、ＣＨａ、及びＨ２の混合ガスを供給する第
２ガス供給源、（２２）は第３形成室（１３）にＳｉＨ
４ガスを供給する第３ガス供給源、（２３）は第４形成
室（１４）に、Ｓ ｉ Ｈ４、ＰＨ，及びＨ２の混合ガ
スを供給する第４ガス供給源である。~(■5) Exhaust port for exhausting air, (16) is for each room (10)
~ (15) A shutter that can be opened and closed provided on the partition wall, (
17) (18) are the first to fourth forming chambers (11) to (14)
The parallel plate electrodes (19) arranged inside the parallel plate type [!
(17) High-frequency power source that supplies high-frequency power at evening (18), (20) is S i H4, C in the first formation chamber (11)
A first gas supply source that supplies a mixed gas of I-(4, B (CH3), and H2, (21) is a second forming chamber (12)
A second gas supply source (22) supplies a mixed gas of SiH4, CHa, and H2 to the third formation chamber (13).
A third gas supply source (23) that supplies four gases is a fourth gas supply source that supplies a mixed gas of S i H4, PH, and H2 to the fourth formation chamber (14).
斯る製造装置を用いて、基板（コ）は仕込室＜ＩＯＪに
仕込まれた後、第１形成室（１１）から順次箱２、第３
及び第４形成室＋１２） （１３＋ ＋１４）を搬送さ
せることにより、各形成室で個別に、ｐ型ａ−ＳｉＣ層
（３）、ａ−ＳｉＣバッファ層（４）、ｉ型ａ−Ｓｉ層
（５）及びｎ型ａ−Ｓｉ層（６）が順次形成される。Using such manufacturing equipment, the substrates (1) are loaded into the preparation chamber <IOJ, and then sequentially transferred from the first formation chamber (11) to the boxes 2 and 3.
By transporting the fourth forming chamber +12) (13+ +14), the p-type a-SiC layer (3), the a-SiC buffer layer (4), and the i-type a-Si layer ( 5) and an n-type a-Si layer (6) are sequentially formed.
第３図はａ−９ｉＣバッファ層（４）のホウ素濃度と光
起電力装置の変換効率との関係を示す特性図である。な
お、同図における変換効率は、従来例であるホウ素濃度
（２Ｘ’ｌ Ｏ１７（ａｔｍ／ｃｍ’）フを有する装置
の変換効率を１として規格化したものである。FIG. 3 is a characteristic diagram showing the relationship between the boron concentration of the a-9iC buffer layer (4) and the conversion efficiency of the photovoltaic device. The conversion efficiency in the figure is normalized by setting the conversion efficiency of a conventional device having a boron concentration (2X'l O17 (atm/cm')) as 1.
同図から明らかなように、ａ−ＳｉＣバッファ層（４）
内のホウ素濃度をＩ Ｘ １０１７（ａｔｍ／ｃｍ３）
以下とすることによって、光電変換効率を向上させるこ
とができる。As is clear from the figure, the a-SiC buffer layer (4)
The boron concentration in I x 1017 (atm/cm3)
The photoelectric conversion efficiency can be improved by setting it as follows.
このように、ａ−ＳｉＣバッファ層（４）内に含まれる
ホウ素濃度をＩ Ｘ １０ ” （ａｔｍ／ｃｎ’）以
下とするべく、本発明では、上述のように、ｐ型ａ−Ｓ
ｉＣ層（３）を形成する第１形成室（１１）とは異なる
第２形成室（１２）でａ−ＳｉＣバッファ層（４）を形
成している。これにより、基板（１）を搬送するために
用いているトレイ（図示せず）付着して＾
いるＢ（ＣＨ３）１ガスやｐ型ａ−ＳｉＣ層（３）から
の熱拡散等の影響によって、ａ−ＳｉＣバッファ層（４
）内に若干のホウ素が混入することは、免れないものの
、ａ−ＳｉＣバッファ層（４）内のホウ素濃度をＩ Ｘ
１０ ” （ａｔｍ／ｃｍ’）以下とすることが可能
である。In this way, in order to keep the boron concentration contained in the a-SiC buffer layer (4) below I x 10''(atm/cn'), the present invention uses p-type a-S
The a-SiC buffer layer (4) is formed in a second formation chamber (12) different from the first formation chamber (11) in which the iC layer (3) is formed. As a result, due to the effects of heat diffusion from the B(CH3)1 gas adhering to the tray (not shown) used to transport the substrate (1) and the p-type a-SiC layer (3), , a-SiC buffer layer (4
) Although it is inevitable that some boron will be mixed in the a-SiC buffer layer (4), the boron concentration in the a-SiC buffer layer (4) is
10''(atm/cm') or less.
なお、上記実施例では、ａ−ＳｉＣバッファ層（４）は
、炭素濃度を均一にしているが、炭素濃度をｐ型ａ−Ｓ
ｉＣ層（３）側から１型ａ−Ｓｉ層（５）側へ向かって
漸減させたグレイプツトな層としても良い。In the above example, the a-SiC buffer layer (4) has a uniform carbon concentration, but the carbon concentration is
It may also be a grape-like layer that gradually decreases from the iC layer (3) side to the type 1 a-Si layer (5) side.
（ト）発明の効果
本発明によれば、ｐ型ａ−ＳｉＣ層とｉ型ａ−Ｓｉ層と
の間に、ホウ素濃度が１×１０′７（ａｔｅ／ｃｍ’）
以下のａ−ＳｉＣ層を介挿したので、この部分にお
ける光キャリアの再結合を抑制することができ、従って
、光電変換効率を向上させることができる。(g) Effects of the invention According to the invention, the boron concentration is 1×10'7 (ate/cm') between the p-type a-SiC layer and the i-type a-Si layer.
Since the following a-SiC layer is inserted, recombination of photocarriers in this portion can be suppressed, and therefore, photoelectric conversion efficiency can be improved.
第１図乃至第３図は本発明の一実施例を示し、第１図は
光起電力装置の断面図、第２図光起電力装置の製造装置
の概略図、第３図はホウ素濃度と光電変換効率との関係
図である。
（３１−ｐ型ａ−ＳｉＣＪｉ、（４１−ａ−ＳｉＣバッ
ファ層、（５）・ ｉ型ａ−Ｓｉ層、（１１）−・・第
１形成室、（１２）・・・第２形成室、 （１３）・・
・第３形成室。Figures 1 to 3 show an embodiment of the present invention, with Figure 1 being a cross-sectional view of a photovoltaic device, Figure 2 being a schematic diagram of a photovoltaic device manufacturing device, and Figure 3 showing boron concentration and It is a relationship diagram with photoelectric conversion efficiency. (31-p-type a-SiCJi, (41-a-SiC buffer layer, (5)・i-type a-Si layer, (11)--first formation chamber, (12)--second formation chamber , (13)...
・Third formation chamber.
Claims (2)
間に、ホウ素濃度が１×１０＾１＾７（ａｔｍ／ｃｍ＾
３）以下の非晶質ＳｉＣ層を介挿したことを特徴とする
光起電力装置。(1) The boron concentration is 1×10^1^7 (atm/cm^7) between the p-type amorphous SiC layer and the i-type amorphous Si layer.
3) A photovoltaic device characterized by interposing the following amorphous SiC layer.
程と、ホウ素濃度が１×１０＾１＾７（ａｔｍ／ｃｍ＾
３）以下の非晶質ＳｉＣ層を上記第１反応室と異なる第
２反応室で形成する工程と、ｉ型の非晶質Ｓｉ層を上記
第１反応室及び第２反応室と異なる第３反応室で形成す
る工程とを備えたことを特徴とする光起電力装置の製造
方法。(2) The process of forming a p-type amorphous SiC layer in the first reaction chamber and the step of forming a p-type amorphous SiC layer with a boron concentration of 1×10^1^7 (atm/cm^
3) Forming the following amorphous SiC layer in a second reaction chamber different from the first reaction chamber, and forming an i-type amorphous Si layer in a third reaction chamber different from the first reaction chamber and the second reaction chamber. 1. A method for producing a photovoltaic device, comprising a step of forming it in a reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174603A JPH0225078A (en) | 1988-07-13 | 1988-07-13 | Photovoltaic device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174603A JPH0225078A (en) | 1988-07-13 | 1988-07-13 | Photovoltaic device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0225078A true JPH0225078A (en) | 1990-01-26 |
Family
ID=15981463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63174603A Pending JPH0225078A (en) | 1988-07-13 | 1988-07-13 | Photovoltaic device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0225078A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419783A (en) * | 1992-03-26 | 1995-05-30 | Sanyo Electric Co., Ltd. | Photovoltaic device and manufacturing method therefor |
| JP2010135415A (en) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | Method of manufacturing thin-film solar cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030182A (en) * | 1983-07-28 | 1985-02-15 | Fuji Electric Corp Res & Dev Ltd | Manufacture of amorphous photovoltaic element |
| JPS6050973A (en) * | 1983-08-31 | 1985-03-22 | Agency Of Ind Science & Technol | Semiconductor device |
| JPS60152076A (en) * | 1984-01-20 | 1985-08-10 | Mitsui Toatsu Chem Inc | Amorphous silicon solar cell |
| JPS6193673A (en) * | 1984-10-12 | 1986-05-12 | Sanyo Electric Co Ltd | photovoltaic element |
| JPS62159475A (en) * | 1986-01-08 | 1987-07-15 | Hitachi Ltd | Amorphous Si solar cell |
-
1988
- 1988-07-13 JP JP63174603A patent/JPH0225078A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030182A (en) * | 1983-07-28 | 1985-02-15 | Fuji Electric Corp Res & Dev Ltd | Manufacture of amorphous photovoltaic element |
| JPS6050973A (en) * | 1983-08-31 | 1985-03-22 | Agency Of Ind Science & Technol | Semiconductor device |
| JPS60152076A (en) * | 1984-01-20 | 1985-08-10 | Mitsui Toatsu Chem Inc | Amorphous silicon solar cell |
| JPS6193673A (en) * | 1984-10-12 | 1986-05-12 | Sanyo Electric Co Ltd | photovoltaic element |
| JPS62159475A (en) * | 1986-01-08 | 1987-07-15 | Hitachi Ltd | Amorphous Si solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419783A (en) * | 1992-03-26 | 1995-05-30 | Sanyo Electric Co., Ltd. | Photovoltaic device and manufacturing method therefor |
| JP2010135415A (en) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | Method of manufacturing thin-film solar cell |
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