JPH02260449A - Hybrid integrated circuit device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

Detailed Description of the Invention (Industrial Field of Application) The present invention relates to hybrid integrated circuit devices, particularly high-frequency power amplifier circuits (high-frequency power amplifier modules). GaAsFET power hybrid I for type car phone
This article relates to techniques that are effective when applied to C.

[Conventional technology]

A UHF band high frequency power amplifier hybrid IC (high frequency power amplifier module) generally has a structure in which a wiring board such as a ceramic board or a glass epoxy resin board (Glaevo base 1) is bonded to a heat sink made of copper or the like. An example of a car phone that incorporates a high frequency power amplifier module is a car phone. As a high-frequency power amplifier module for a car phone, for example, "GAIN J" published by Hitachi, Ltd. Semiconductor Division Technology Division
As described in pages 23 to 25 of the September 1988 issue, a high frequency power MO3FET module (high frequency amplification module) is known.

This high frequency amplification module is a 1.5μm process horizontal power MOSFET (Metal Oxid
eSemiconductor Ffeld-Effe
In addition to incorporating three stages of CT-Transistors, high efficiency is achieved by making full use of W4 (Cu) thick film wiring technology.

Conventional high frequency power amplifier modules of this type have a fifth
The structure is as shown in the cross-sectional view in the figure and the plan view in FIG. The high frequency power amplifier module 1 is
In appearance, the heat sink 2 is made of a rectangular metal plate with good thermal conductivity, the rectangular case 3 made of resin is attached to the main surface of the heat sink 2, and the case 3 is made of a rectangular metal plate with good thermal conductivity.
It consists of four rods 4 protruding from one side.

The heat sink 2 has a structure in which both ends thereof protrude from the case 3, and a mounting groove 5 consisting of a 0-shaped notch is provided at the center of the tip. This mounting groove 5 is used when mounting the power amplifier module 1 using screws.

Further, the lead 4 is connected to an input terminal (P) from left to right.
IN), gain control terminal (VARC).

It serves as a power supply terminal (Vem) and an output terminal (Poua).

In the high frequency power amplifier module 1, as shown in FIG.
A high frequency circuit board 6 is fixed to the main surface of. This high frequency circuit board 6 is made of a ceramic substrate, and has a wiring layer formed on its main surface (not shown). Three power MO3FETs 7, 8.9, a capacitor 10, etc. are fixed to predetermined portions. The power MO3FE
T7.8.9 is connected to the 1st stage, 2nd stage, final stage and 3rd stage. Also, the power MOSFET? , 8.9, each electrode is connected to the wiring layer by a wire 11. As a result, the high frequency power amplifier module 1
A three-stage amplifier circuit is constructed, and the output is highly efficient.

[Problem to be solved by the invention]

Car phone services are expanding, and in the future there will be a demand for small, lightweight, handheld phones. Therefore, there is a demand for a high frequency power amplifier module incorporated in a car telephone to have an even smaller external size.

By the way, the applicant uses a band of 900MHz.
We are planning to develop a GaAs-FET power amplifier module as a high frequency power amplifier module for Z car telephones. Power amplifiers using GaAs-FETs require a negative power supply at the gate. For this reason, it becomes necessary to incorporate a negative power supply circuit into the high frequency circuit board, but in the conventional structure, the size of the high frequency circuit board is minimized in order to miniaturize the high frequency power amplifier module. There is no space to incorporate a power supply circuit. Therefore, in a structure in which the negative power supply circuit is directly incorporated on the top surface of the high-frequency circuit board, the high-frequency circuit board would be larger than the current one, and the dimensions of the high-frequency power amplifier module would also be large. turn into.

The purpose of the present invention is to provide a hybrid integrated circuit device with high circuit packaging density;
That is, the objective is to provide a high frequency power amplifier module.

Another object of the present invention is to provide a high frequency power amplifier module that can improve circuit packaging density and have at least the same external dimensions as current products.

The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

[Means to solve the problem]

A brief overview of typical inventions disclosed in this application is as follows.

That is, in the high frequency power amplifier module of the present invention, a high frequency circuit board is fixed to the top surface of the heat sink, and three GaAs-FETs are mounted on the top surface of the high frequency circuit board.
It is a highly efficient power amplifier module because it is arranged in stages. In addition, in this Mosier, the first and second stages have low heat generation
The heat sink area facing the area where the As-FET is fixed is hollowed out, and the back side of the high frequency circuit board exposed in the hollow space is connected to the wiring layer on the top surface of the high frequency circuit board and an organic layer through the through hole. A negative power circuit wiring connected to the negative power circuit is provided, and electronic components constituting the negative power circuit are mounted on this negative power circuit wiring.

The negative power circuit component is located within the hollow space without protruding from the lower surface of the heat sink, and (
The hollow space is sealed with resin.

[Effect]

According to the above means, the high frequency power amplifier of the present invention
Since the module has a part of the heat sink hollowed out and a negative power supply circuit built into the hollowed out space, the external dimensions do not increase and can be made similar to conventional products, improving circuit packaging density. Furthermore, the hollowed out portions of the heat sink are arranged in the first and second stages.
This is a heat sink area facing the area where the aAs-FET is arranged. In a high-frequency power amplifier module composed of three stages of GaAs-FETs, the final stage transistor accounts for 80% of the total heat generated. Therefore, the GaAs-F in the first and second stages
In the case of this structure in which the heat sink part facing the fixed part of the ET is hollowed out, there is no particular problem with heat dissipation, and the high frequency power amplifier module operates stably.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a high frequency power amplifier according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view showing the main parts of the module; Fig. 2 is a schematic plan view of the module with the case removed;
The same figure is a perspective view showing the external appearance, and FIG. 4 is the same (a bottom view showing the negative power supply circuit portion of the module of the present invention).

As shown in FIG. 3, the high frequency power amplifier circuit (power amplifier module) 1 of this embodiment has a heat sink 2, more specifically, is made of a rectangular metal plate with high thermal conductivity such as copper. a heat sink 2, a rectangular case 3 made of resin attached to the main surface of the heat sink 2, and a case 4 protruding from one side (front side) of the case 3.
It consists of 4 parts of book glue. This power amplifier module l has, for example, a length of 60 mm and a width of 14 mm.

The thickness is approximately 6 mm. Further, the thickness of the heat sink 2 is 2.3 mm.

Both ends of the heat sink 2 are structured to protrude from the case 3, and a mounting groove 5 consisting of a U-shaped notch is provided at the center of the tip. This mounting groove 5 is used when mounting the power amplifier module 1 using screws. Further, the lead 4 is connected from left to right to input terminal (PIN) + gain control terminal (Va
pc), a power supply terminal (Vsa), and an output terminal (Po.).

As shown in FIG. 1, the power amplifier module 1 has a structure in which a high frequency circuit board 6 is fixed to the main surface of a heat sink 2 within a case 3. This high frequency circuit board 6 is made of a ceramic substrate, and a wiring layer for forming a circuit is provided on its main surface, although not shown. Then, three GaAs-FETs (G
aAs-FET) 15, 16, 17, a capacitor 10, etc. are fixed. Each electrode of the GaAs-FETL 5, 16° 17 is connected to the wiring layer by a wire 11. As a result, power amplifier module 1
constitutes a three-stage amplifier circuit. This power amplifier module 1 uses a band of 800 to 900 MHz, and can convert an input of about 1 mW to an output of about 2 W.

On the other hand, which is one of the characteristics of the present invention, the heat sink 2 is partially hollowed out, and a negative power supply circuit is incorporated in the hollowed out space 20. That is, as shown in FIGS. 1 and 2, the hollow space 20 faces an area extending from the area where the first-stage GaAs-FET 15 is attached to the area where the second-tier GaAs-FET 16 is attached. A portion of the heat sink 2 is hollowed out. A power circuit wiring 21 for configuring a negative power circuit as shown in FIG. 4 is provided on the back side of the high frequency circuit board 6 facing the hollow space 20. 21 is shown as a white pattern.And around this power supply circuit wiring 21, as shown by hatching, there is a ground wiring 22.
is provided. Due to the presence of this ground wiring 22, the front IN surface of the high frequency circuit board 6 is magnetically shielded.

The power supply circuit wiring 21 is electrically connected to a predetermined portion of wiring (not shown) on the upper surface of the heat sink 2 via a conductor filled in a through hole 23. An IC 24 and a capacitor 25 are mounted on the power supply circuit wiring 21 in a surface-attached manner. Further, the hollow space 20 is filled with an insulating resin 26 as shown in FIG.
24, capacitor 25, etc. are sealed. This insulating resin 26 is provided only in the hollow space 20 and does not protrude from the bottom surface (back surface) of the heat sink 2, so that when the high frequency power amplifier module l is mounted, the bottom surface of the heat sink 2 is separated from the mounting surface. It is designed to fit tightly without floating up. As a result, each GaAs-FET15,
The heat generated by 16, 17, etc. is transferred and radiated from the entire surface of the heat sink 2 to the support plate supporting the high frequency power amplifier module 1 through the heat sink 2.

Note that the heat generated by the GaAs-FETI 7 in the final stage accounts for 80% of the total amount of heat generated. Therefore, in this embodiment, the heat transfer (heat radiation) path of the final stage GaAs-FET 17 is avoided, and a hollow space 20 is provided on the side of the first stage GaAs-FET 15, which is as far away as possible. As a result, even if heat sink 2 is partially hollowed out, the final stage G
The heat generated in the aAs-FET 17 is directly dissipated via the heat sink 2, and the heat generated in the first and second stage GaAs-FETs 15 and 16 is dissipated through the heat sink portion around the hollowed out portion, Since it is dissipated through the insulating resin 26 embedded in the hollow space 20, the operation of the high frequency power amplifier module 1 is not particularly hindered.

According to such an embodiment, the following effects can be obtained.

(1) In addition to mounting electronic components on a high-frequency circuit board fixed to the top surface of a heat sink, the high-frequency power amplifier module of the present invention has a heat sink partially hollowed out, and the high-frequency circuit board in the hollowed out part is mounted on the high-frequency circuit board. Since electronic components are also mounted on the back side, the effect of improving circuit packaging density can be obtained.

(2) According to the above (1), according to the present invention, since electronic components are mounted in the hollowed out portion of the heat sink, a high frequency power amplifier module can be assembled without changing the existing external dimensions. Effects can be obtained.

(3) According to (1) and (2) above, the present invention has the effect that it is possible to provide a high-frequency power amplifier module using GaAs-FET incorporating a negative power supply circuit without changing the current external dimensions. is obtained.

Therefore, it is possible to provide a high frequency power amplifier module suitable for small and lightweight hand-held car telephones.

(4) In the high frequency power amplifier module of the present invention, the high frequency circuit board is partially hollowed out and a negative power supply circuit is built into this hollowed out part, but the entire circumference of the power supply circuit wiring for this negative power supply circuit is Since the ground wiring is provided, it is possible to shield the front and back sides of the high-frequency circuit board, making it difficult for high-frequency signals on the front side of the board to leak to the back side, preventing IC malfunctions caused by high frequencies, and ensuring stable operation. The effect is that the operation is guaranteed.

(5) The high-frequency power amplifier module of the present invention has a high-frequency circuit board partially cut out.
Since it is provided in a corresponding area that is outside the fixed area of the s-FET, it is possible to obtain the effect that it does not particularly interfere with the operation of the high frequency power amplifier module.

(6) According to (1) to (5) above, according to the present invention, a high-frequency power amplifier for a car phone using a GaAs-FET with a built-in negative power supply circuit and stable operating characteristics while maintaining the current external dimensions. A synergistic effect can be obtained in that modules can be provided.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor.

The above explanation has mainly been about the application of the invention made by the present inventor to a high frequency power amplifier module incorporating GaAs-FETs in multiple stages, which is the field of application in which the invention was made by the present inventor, but the invention is not limited to this. It can also be applied to high-frequency power amplifier modules incorporating MOSFETs.

The present invention is applicable at least to hybrid integrated circuit devices.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

The high frequency power amplifier module of the present invention has three G on the top surface of the high frequency circuit board fixed on the top surface of the heat sink.
Since the aAs-FETs are arranged in three stages, high output efficiency can be achieved. In addition, a portion of the heat sink is hollowed out, and components constituting the negative power supply circuit are disposed in the hollowed out part, so that the negative power supply circuit can be incorporated without increasing the external dimensions. The circuit packaging density is improved.In addition, the hollowed out portion is provided corresponding to the area where the first and second stage GaAs-FETs are installed, and the final stage GaAs-FET, which accounts for 80% of the total heat generation, is provided. -Since the location is outside the area where the FET is installed, there is no particular problem with heat dissipation and stable operation can be achieved.Furthermore, the ground wiring is provided around the power circuit wiring of the negative power circuit. Since this is provided, magnetic shielding between the front and back surfaces of the high frequency circuit board is also possible.

[Brief explanation of drawings]

FIG. 1 shows a high frequency power amplifier according to an embodiment of the present invention.
FIG. 2 is a schematic plan view of the module with the case removed. FIG. 3 is a perspective view of the module according to the present invention. FIG. 4 is a schematic cross-sectional view showing the main parts of the module. Figure 5 is a schematic cross-sectional view showing an overview of a conventional high-frequency power amplifier module; Figure 6 is the same; <A schematic plan view of the module with the case removed. be. 1...High frequency power amplifier module, 2...Heat sink, 3...Case, 4...Lead, 5...
・Mounting groove, 6... High frequency circuit board, 7, 8.9 Kawa power MO3FET, 10... Capacitor, 11... Wire, 15, 16.17 = GaAs-FET, '20
- (hollow space, 21... power supply circuit wiring, 22...
Earth wiring, 23...Through hole part, 24...r
c, 25... Capacitor, 26... Insulating resin. 2- Heaton jig 3- Case 20-
θ poem 1 5 y-G, As-FET 25-ko/di! ν
'7 26-! J beg 64 (arc o k (noisy also APc Lν P6wa.

Claims (1)

[Claims] 1. A heat sink, a high-frequency circuit board fixed to the top surface of the heat sink, an FET and a capacitor arranged on the top surface of the high-frequency circuit board, and a structure that covers the FET and high-frequency circuit board. A hybrid integrated circuit device comprising: a case attached to the upper surface of the heat sink; and a lead having an outer end protruding outside the case and an inner end attached to the high frequency circuit board, the heat sink being An electronic component electrically connected to the top surface of the high-frequency circuit board is disposed on the back surface of the high-frequency circuit board exposed to the hollow space, and the hollow space is filled with an insulating resin. A hybrid integrated circuit device, characterized in that the electronic component is sealed with a sealant. 2. The FET is made of GaAs-FET, and
2. The hybrid integrated circuit device according to claim 1, wherein the hollowed out portion is provided with a negative power supply circuit. 3. The hybrid integrated circuit device according to claim 1, wherein the hollowed out portion is provided in an area as far away as possible from the area where the final stage GaAs-FET is attached. 4. A ground wiring is provided on the back surface of the high frequency circuit board on which the negative power circuit is formed so as to surround the power circuit wiring for forming the negative power circuit. The hybrid integrated circuit device described.