JPH02265149A - Microwave induction heating apparatus - Google Patents
Microwave induction heating apparatusInfo
- Publication number
- JPH02265149A JPH02265149A JP8535089A JP8535089A JPH02265149A JP H02265149 A JPH02265149 A JP H02265149A JP 8535089 A JP8535089 A JP 8535089A JP 8535089 A JP8535089 A JP 8535089A JP H02265149 A JPH02265149 A JP H02265149A
- Authority
- JP
- Japan
- Prior art keywords
- plane
- short circuiting
- waveguide
- short circuit
- guide tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Microwave Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
この発明は、矩形導波管の断面の長辺用法より十分小さ
い寸法の被処理物を加熱処理する導波管形マイクロ波加
熱装置に係り、特にその短絡器の改良に関する。[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) This invention is a waveguide-type microprocessor for heat-treating a workpiece whose size is sufficiently smaller than the long side of a rectangular waveguide cross section. The present invention relates to wave heating devices, and particularly to improvements in short circuits thereof.
(従来の技術)
従来より用いられている導波管形マイクロ波加熱装置は
、導波管中に定在波を発生せしめ、その最大電場強度部
に被処理物を置いて、効率的にマイクロ波電力を被処理
物に照射して、加熱処理を行なっている。(Prior art) Waveguide type microwave heating devices that have been used in the past generate a standing wave in a waveguide, place the object to be processed in the area of maximum electric field strength, and efficiently heat the microwave. Heat treatment is performed by irradiating the workpiece with wave power.
(発明が解決しようとする課題)
ところが、従来のマイクロ波加熱装置においては、短絡
器の短絡面は平面であることから、第3図に示すように
矩形導波管内における定在波の電場強度分布は、導波管
11の横断面の長辺壁即ち電界Eに対して直角な磁界面
壁12に平行な方向について導波管両側壁即ち電界Eと
平行な電界面壁13の壁面で電場強度0、導波管中央C
で最大電場強度となるような正弦波的に変化する分布と
なる。(Problem to be Solved by the Invention) However, in the conventional microwave heating device, since the shorting surface of the short circuit is a flat surface, the electric field strength of the standing wave in the rectangular waveguide is The distribution is such that the electric field intensity is 0 on both side walls of the waveguide, that is, on the wall surface of the electric interface wall 13 parallel to the electric field E, in a direction parallel to the long side wall of the cross section of the waveguide 11, that is, the magnetic interface wall 12, which is perpendicular to the electric field E. , waveguide center C
The distribution changes sinusoidally, with the maximum electric field strength at .
このため、被処理物が導波管11の磁界面壁12の幅寸
法に比べ小さい場合、導波管中を伝送されてきたマイク
ロ波電力の一部しか処理に用いられず、効率が低い。特
に、被処理物が非常に小さい場合、或いは非常に細い場
合、加熱処理することが困難で、非常に効率が悪い。Therefore, if the object to be processed is smaller than the width of the magnetic interface wall 12 of the waveguide 11, only a portion of the microwave power transmitted through the waveguide is used for processing, resulting in low efficiency. In particular, when the object to be treated is very small or very thin, heat treatment is difficult and very inefficient.
更に、誘電体損失係数の大きい被処理物を加熱処理する
場合、従来の短絡器では十分な定在波は形成されず、マ
イクロ波発振器側が加熱処理され易い傾向にあり、均一
な加熱処理の妨げとなっている。Furthermore, when heat-treating a workpiece with a large dielectric loss coefficient, conventional short circuits do not form sufficient standing waves, and the microwave oscillator side tends to be heated, which hinders uniform heat treatment. It becomes.
この発明は、上記事情に鑑みなされたもので、加熱効率
の向上、加熱処理不可能であった被処理物の加熱処理の
均一化を行なうことが出来るマイクロ波加熱装置を提供
することを目的とする。This invention was made in view of the above circumstances, and an object of the present invention is to provide a microwave heating device that can improve heating efficiency and uniformize the heat treatment of objects that cannot be heated. do.
[発明の構成]
(課題を解決するための手段)
この発明は、導波管の一端を閉鎖する短絡器が導体から
なり、その短絡面は中央突出部がら両側に対称に凹曲面
をなしているマイクロ波加熱装置である。[Structure of the Invention] (Means for Solving the Problems) In the present invention, the short circuit for closing one end of the waveguide is made of a conductor, and the short circuit surface thereof has a concave curved surface symmetrically on both sides of the central protrusion. This is a microwave heating device.
(作用)
この発明によれば、被処理物の位置に短絡器による反射
波を集中することが出来、その結果、被処理物の位置の
電場強度をより一層高めることが出来る。従って、加熱
効率か向上する。(Function) According to the present invention, the reflected waves from the short circuit can be concentrated at the position of the object to be processed, and as a result, the electric field strength at the position of the object to be processed can be further increased. Therefore, heating efficiency is improved.
(実施例)
以下、図面を参照して、この発明の一実施例を詳細に説
明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
この発明によるマイクロ波加熱装置は、第1図及び第2
図に示すように構成され、導波管11の一端の図示しな
いマイクロ波発振器側11aとは反対側11bが短絡器
14にて電気的に閉鎖されている。この短絡器14は導
体からなっているが、図から明らかなように、その短絡
面15は中央突出部16aから両側の電界面壁13の方
に互いに対称に凹曲面16bで形成されている。この凹
曲面16bは好ましくは放物面であり、磁界面壁12に
垂直な面になっている。The microwave heating device according to the present invention is shown in FIGS. 1 and 2.
It is configured as shown in the figure, and one end of the waveguide 11 on the opposite side 11b from the unillustrated microwave oscillator side 11a is electrically closed by a short circuit 14. This short circuit 14 is made of a conductor, and as is clear from the figure, its short circuit surface 15 is formed with a concave curved surface 16b symmetrically extending from the central protrusion 16a toward the electric surface walls 13 on both sides. This concave curved surface 16b is preferably a paraboloid, and is perpendicular to the magnetic interface wall 12.
更に、この短絡器14には支持棒17が取付けられ、こ
の支持棒17を駆動して、短絡器14を矢印F方向に導
波管11内で移動出来るように構成されている。つまり
、短絡器14は導波管11の長手方向に移動可能になっ
ている。Further, a support rod 17 is attached to the short circuit 14, and the support rod 17 is driven to move the short circuit 14 within the waveguide 11 in the direction of arrow F. That is, the short circuit 14 is movable in the longitudinal direction of the waveguide 11.
尚、初号18は被処理物であり、導波管11内に発生し
た定在波の最大電場強度部となる中央に置かれて加熱処
理される。そのため、導波管11の相対向する幅広面即
ち、電界面壁13の中央に、それぞれ透孔19が設けら
れ、細長物の被処理物18を幅広面中央に挿入或いは搬
送出来るようになっている。Incidentally, the first object 18 is the object to be treated, and is placed at the center where the electric field intensity of the standing wave generated in the waveguide 11 is maximum, and is heated. Therefore, a through hole 19 is provided in each of the opposing wide surfaces of the waveguide 11, that is, in the center of the electric interface wall 13, so that an elongated object 18 to be processed can be inserted or transported into the center of the wide surface. .
さて次に、加熱処理について述べるが、加熱処理効果が
上がり難い場合、もしくは、処理が不可能な場合の極端
な例として、糸状被処理物の加熱処理について述べる。Next, we will discuss heat treatment, and as an extreme example where the effect of heat treatment is difficult to increase or where treatment is impossible, we will discuss heat treatment of filamentous objects.
尚、マイクロ波加熱、或いはマイクロ波によってプラズ
マ発生を行なう場合、T E 、、モードを用いるのが
普通であるので、ここでの説明もこのTE1oモードに
ついて記述することにする。Note that when microwave heating or plasma generation is performed using microwaves, the T E mode is usually used, so the explanation here will also be based on the T E1o mode.
矩形導波管11中を伝播するマイクロ波は、第1図に一
点鎖線矢印で示すように、導波管内壁を反射しながら進
行する一組の平面波に分解出来る。The microwave propagating in the rectangular waveguide 11 can be decomposed into a set of plane waves that propagate while reflecting off the inner wall of the waveguide, as shown by the dashed-dotted line arrows in FIG.
その際の平面波進行方向と導波管内壁との角度θは、簡
単に計算出来る。即ち、導波管内径か長辺(磁界面壁)
:96mm、短辺(電界面壁):27mmの場合、角度
θは約39.6°となる。The angle θ between the plane wave traveling direction and the inner wall of the waveguide at this time can be easily calculated. In other words, the inner diameter of the waveguide or the long side (magnetic interface wall)
: 96 mm, short side (electrode surface wall): 27 mm, the angle θ is approximately 39.6°.
そこで、この発明のように2つの平面波を、2つの放物
面を形成した短絡面3を用いることにより、はぼ中央の
被処理物の位置に大部分を集中することが出来る。その
ため、僅かな損失を伴うが、従来例よりは格段に高効率
である。このに部分に被処理物を置いているので、マイ
クロ波のほぼ全部が、少なくとも1回は被処理物に入射
することとなり、効率の向上が期待出来る。Therefore, by using the two plane waves and the short-circuiting surface 3 formed with two paraboloids as in the present invention, most of the waves can be concentrated at the position of the object to be processed at the center. Therefore, although there is a slight loss, the efficiency is much higher than that of the conventional example. Since the object to be processed is placed in this area, almost all of the microwaves will be incident on the object to be processed at least once, and an improvement in efficiency can be expected.
尚、高周波電界の方向は導波管の幅広面に対して垂直で
あり、従って被処理物と平行な方向であり、均一加熱作
用がある。Note that the direction of the high-frequency electric field is perpendicular to the wide surface of the waveguide, and therefore parallel to the object to be processed, and has a uniform heating effect.
又、上記実施例と同様の考え方で、他モード及び成る特
定の場所に電場を集中せしめたり、希望の電場分布を作
ることが可能である(例えば、TE2oモードを用いる
、曲面を球面とするなど)。Also, using the same concept as in the above embodiment, it is possible to concentrate the electric field in other modes and specific locations, or to create a desired electric field distribution (for example, using the TE2o mode, making the curved surface a spherical surface, etc.) ).
更に、誘電体損失係数の大きな被処理物を加熱処理する
場合、マイクロ波発振器に近い側が加熱処理され易い傾
向にあったが、これも回避可能である。Furthermore, when a workpiece having a large dielectric loss coefficient is heat-treated, the side closer to the microwave oscillator tends to be more easily heat-treated, but this can also be avoided.
又、この発明はガスをプラズマ活性化する励起装置とし
ても好敵し、被処理物の位置にガス管を装着して用いる
。The present invention is also suitable as an excitation device for activating gas into plasma, and is used by attaching a gas pipe to the position of the object to be treated.
[発明の効果]
この発明によれば、短絡器は、その短絡面か中央突出部
から両側に対称な凹曲面をなす導体からなっているので
、被処理物の位置に短絡器による反射波を集中出来て、
電場強度をより一層高めることが出来る。従って、加熱
効率の向上を図ることが出来る。[Effects of the Invention] According to the present invention, since the short circuit is made of a conductor that forms a symmetrical concave curved surface on both sides from the short circuit surface or the central protrusion, the wave reflected by the short circuit is not transmitted to the position of the object to be processed. I can concentrate,
The electric field strength can be further increased. Therefore, it is possible to improve heating efficiency.
第1図はこの発明の一実施例に係るマイクロ波加熱装置
を示す軸方向断面図、第2図は同じく一部を切り欠いて
示す斜視図、第3図は導波管中の定在波の電場強度分布
を示す斜視図である。
1・・・導波管、2・・・短絡器、3・・・短絡面、5
・・・被処理物。
出願人代理人 弁理士 鈴江武彦
第
図FIG. 1 is an axial sectional view showing a microwave heating device according to an embodiment of the present invention, FIG. 2 is a partially cutaway perspective view, and FIG. 3 is a standing wave in a waveguide. FIG. 2 is a perspective view showing the electric field strength distribution of FIG. 1... Waveguide, 2... Short circuit, 3... Short circuit surface, 5
...Object to be processed. Applicant's agent Patent attorney Takehiko Suzue
Claims (1)
発生した定在波の中央部最大電場強度部に被処理物が置
かれて加熱処理されるマイクロ波加熱装置において、 上記短絡器は、その短絡面が中央突出部から両側に対称
に凹曲面をなす導体からなることを特徴とするマイクロ
波加熱装置。[Scope of Claims] A microprocessor in which one end of a rectangular waveguide is closed with a short circuit, and the object to be processed is placed in the central part of the maximum electric field strength of the standing wave generated in the waveguide, and the object is heated. In the microwave heating device, the short circuit is comprised of a conductor whose short circuit surface forms a concave curved surface symmetrically on both sides from the central protrusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8535089A JPH02265149A (en) | 1989-04-04 | 1989-04-04 | Microwave induction heating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8535089A JPH02265149A (en) | 1989-04-04 | 1989-04-04 | Microwave induction heating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02265149A true JPH02265149A (en) | 1990-10-29 |
Family
ID=13856234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8535089A Pending JPH02265149A (en) | 1989-04-04 | 1989-04-04 | Microwave induction heating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02265149A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6087642A (en) * | 1997-03-07 | 2000-07-11 | Industrial Microwave Systems, Inc. | Electromagnetic exposure chamber for improved heating |
| US6265702B1 (en) | 1999-04-28 | 2001-07-24 | Industrial Microwave Systems, Inc. | Electromagnetic exposure chamber with a focal region |
| US6797929B2 (en) | 1999-12-07 | 2004-09-28 | Industrial Microwave Systems, L.L.C. | Cylindrical reactor with an extended focal region |
-
1989
- 1989-04-04 JP JP8535089A patent/JPH02265149A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6087642A (en) * | 1997-03-07 | 2000-07-11 | Industrial Microwave Systems, Inc. | Electromagnetic exposure chamber for improved heating |
| US6265702B1 (en) | 1999-04-28 | 2001-07-24 | Industrial Microwave Systems, Inc. | Electromagnetic exposure chamber with a focal region |
| US6797929B2 (en) | 1999-12-07 | 2004-09-28 | Industrial Microwave Systems, L.L.C. | Cylindrical reactor with an extended focal region |
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