JPH02267956A - Semiconductor device package - Google Patents

Abstract

PURPOSE:To enable a high output semiconductor device to be mounted in a simple structure by providing a conductor layer on an aluminum nitride substrate through the intermediary of a polyimide film. CONSTITUTION:Through-holes are made in an aluminum nitride substrate 1 comprising an aluminum nitride sintered body so as to insert metallic terminal pins 2. Next, a polyimide film 3 is formed on the surface of the aluminum nitride substrate 1. Through-holes are made in specific positions on the polyimide film 3 to expose the parts of the terminal pins 2 on the through-hole parts. Accordingly, the defective bond-ability can be avoided by laying the polyimide film 3 between a conductor layer 4 and the aluminum substrate 1 so that a semiconductor chip 5 may be diebonded onto the aluminum nitride substrate 1 in excellent thermal conductivity to improve the heat dissipation of the semiconductor device. Through these procedures, a high output integrated circuit can be directly mounted due to the excellent heat dissipation from the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor device packages, and more particularly to integrated circuit packages.

[Conventional technology]

Traditional integrated circuit packages are made of alumina (Aη203)
Those using multilayer wiring boards and plastic pin grid array packages were common.

[Problem to be solved by the invention]

With the conventional integrated circuit packages using alumina substrates and plastics, these materials have low thermal conductivity and heat dissipates only from the substrate, making it impossible to directly mount high-power integrated circuits. Ta.

[Means to solve the problem]

The semiconductor device package of the present invention includes a terminal pin provided protruding from the back surface of an aluminum nitride substrate, a polyimide film provided on the front surface of the aluminum nitride substrate except for a chip mounting area, and a through-hole provided on the polyimide film. and a conductor layer connected to the terminal pin via a hole.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

The first section is a cross-sectional view of an integrated circuit package according to an embodiment of the present invention.

First, a through hole is formed in an aluminum nitride substrate 1 made of an aluminum nitride sintered body, and a metal terminal pin 2 is inserted thereinto.Next, a polyimide film 3 is formed on the surface of the aluminum nitride substrate 1. A through hole is formed at a predetermined position in the polyimide film 3, and a portion of the terminal pin 2 is exposed at the through hole. Such a polyimide film is formed by the following procedure. First, Photonice U made by Toshisha
A photosensitive polyimide precursor face coating film such as R314 (trade name) is coated on the surface of the aluminum nitride substrate 1. A glass mask is used to expose a predetermined portion of the photosensitive polyimide precursor face coating film. After exposure, when it is developed with a predetermined developer containing alcohol as a main component, the unexposed portion is dissolved in the developer and the other portion remains, resulting in a through-hole pattern. Next, the polyimide precursor is imidized by heating to obtain a polyimide film. During this heating, the photosensitive component evaporates and does not remain in the polyimide film. In this way, a polyimide film 3 having through holes at predetermined positions is formed.

Next, a gold or copper conductor layer 4 is formed by etching or selective plating. The integrated circuit package of the present invention is manufactured through the steps described above.

FIG. 1 also shows a state in which a semiconductor chip 5 is mounted on the integrated circuit package of the present invention. The terminals (ponding pads) of the semiconductor chip 5 and the conductor layer 4 are connected by a process such as wire bonding. Finally, the semiconductor chip, bonding wires, and conductor layers are coated and protected with synthetic resin. Note that the semiconductor chip is die-bonded to the chip mounting portion on the surface of the aluminum nitride substrate using a highly thermally conductive adhesive such as silver paste.

Although it is not practical to provide a conductor layer directly on an aluminum nitride substrate because of problems with adhesion, poor adhesion can be avoided by providing a polyimide film therebetween. Furthermore, since the semiconductor chip can be die-bonded to an aluminum nitride substrate with good thermal conductivity, the heat dissipation of the semiconductor device is improved.

〔Effect of the invention〕

As explained above, the present invention makes it possible to realize a semiconductor device package whose main body is an aluminum nitride substrate with good heat dissipation by providing a conductor layer on an aluminum nitride substrate via a polyimide film, thereby simplifying the production of high-power semiconductor devices. It has the advantage that it can be realized with a simple structure. Furthermore, since a polyimide film is used for the insulating layer, it is advantageous for mounting high-frequency integrated circuits.

5 Kin 1a Te.../F.

[Brief explanation of drawings]

FIG. 1 is a sectional view of an embodiment of the present invention. 1... Aluminum nitride substrate, 2... Terminal pin, 3
... Polyimide film, 4... Conductor layer, 5... Semiconductor chip, 6... Bonding wire. M1 figure

Claims (1)

[Claims] A terminal pin provided protruding from the back surface of the aluminum nitride substrate, a polyimide film provided on the surface of the aluminum nitride substrate excluding the chip mounting area, and a through hole provided on the polyimide film to the terminal pin. A semiconductor device package characterized by having a conductor layer to be connected.