JPH0227280A - Superconductor quantum interference element - Google Patents
Superconductor quantum interference elementInfo
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- JPH0227280A JPH0227280A JP63177703A JP17770388A JPH0227280A JP H0227280 A JPH0227280 A JP H0227280A JP 63177703 A JP63177703 A JP 63177703A JP 17770388 A JP17770388 A JP 17770388A JP H0227280 A JPH0227280 A JP H0227280A
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- coil
- wiring
- magnetic field
- superconducting
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Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は高感度な出力計として用いる超電導量子干渉
素子(Superconducting Quantu
mrnterrerence Device、略して5
QUIDと呼ぶ)中でも直流バイアス電流を用いて駆動
する[)C−8QUIDに関する本のである。[Detailed Description of the Invention] [Field of Industrial Application] This invention relates to a superconducting quantum interference device used as a highly sensitive output meter.
mrnterrerence Device, abbreviated as 5
This is a book about C-8QUID, which is driven using DC bias current.
第8図は従来のDC−8QUIDを示す平面図、 第9
図は上記第8図中に点線で囲んだジョセフソン素子形成
部分+11の拡大平面図、第10図は上記第8図中A−
B間の断面図である。これらの第8図から第10図にお
いて0例えば3iや5i02等で形成された基板(2)
の表面には以下のものが設けられている。即ち、(3)
は主コイル、(4)、(5)は上部電極。Figure 8 is a plan view showing the conventional DC-8QUID, Figure 9
The figure is an enlarged plan view of the Josephson element forming portion +11 surrounded by the dotted line in FIG. 8, and FIG. 10 is A- in FIG.
It is a sectional view between B. In these FIGS. 8 to 10, a substrate (2) formed of 0, for example, 3i, 5i02, etc.
The surface is provided with the following: That is, (3)
is the main coil, (4) and (5) are the upper electrodes.
(51、+71は主コイル+31と上部電極+41.
+51との間にそれぞれ形成されたジョセフソン素子で
ある。配線I Q3により互いに接続されているシャン
ト抵抗(8)。(51, +71 are the main coil +31 and the upper electrode +41.
These are Josephson elements formed between +51 and +51, respectively. Shunt resistors (8) connected to each other by wiring IQ3.
(9)の中央部分は共に第一の絶縁層aOによシ被覆さ
れている。そして上部電極(4)、(5)は接続層an
により配線1 f13に接続され、この配線!α1の先
端はボンディングパッドfi9となっている。主コイル
(3)と接続層C1υとの絶縁は第二の絶縁層α2によ
り実現されている。一方、主コイル(31の一部は配線
141として延びており、その先端はボンディングパッ
ドαeとなっている。ここに、シャント抵抗+81.
+91は例えばMOやAuなどから形成されており、又
、第一の絶縁層帥及び第二の絶縁層α2は例えばsio
。The central portions of (9) are both covered with a first insulating layer aO. The upper electrodes (4) and (5) are connected to the connection layer an
Connected to wiring 1 f13 by this wiring! The tip of α1 is a bonding pad fi9. Insulation between the main coil (3) and the connection layer C1υ is realized by the second insulating layer α2. On the other hand, a part of the main coil (31) extends as a wiring 141, and the tip thereof becomes a bonding pad αe.Here, a shunt resistance +81.
+91 is made of, for example, MO or Au, and the first insulating layer and the second insulating layer α2 are made of, for example, sio.
.
5j02 、 Nb2O5などの絶縁体により形成され
ている。さらに、主コイル(3)、上部電極141.1
51.接続層(Ill、配線■α3.配線1+14.ボ
ンデイングパツドロ9.αeはpb金合金Nb等の金属
系、あるいはY−Ba−Cu−0等のセラミクス系超電
導材料によシ形成されており、特に主コイル(31,上
部電極(41゜(5)、接続層aυ、配線1 +13は
単一の超電導リングを形成している。5j02, is made of an insulator such as Nb2O5. Furthermore, the main coil (3), the upper electrode 141.1
51. The connection layer (Ill, wiring ■ α3. Wiring 1 + 14. Bonding pad 9. αe is formed of a metal-based material such as PB gold alloy Nb, or a ceramic-based superconducting material such as Y-Ba-Cu-0, In particular, the main coil (31), the upper electrode (41° (5), the connection layer aυ, and the wiring 1+13 form a single superconducting ring.
以上の説明のように、DC−8QUIDは2個のジョセ
フソン素子を含む超電導リングを基本構造とする。ここ
に各部の寸法の一例を示すと、基板(2)の大きさh
4wx4m、主コイル(31の外径は300mX300
/Am、線幅は15μm、膜厚は200nmである。As described above, the basic structure of DC-8QUID is a superconducting ring including two Josephson elements. Here is an example of the dimensions of each part: The size h of the board (2)
4wx4m, main coil (outer diameter of 31 is 300mx300
/Am, line width is 15 μm, and film thickness is 200 nm.
ジョセフソン素子(4)、(5)の大きさは4JtmX
411rn。The size of Josephson elements (4) and (5) is 4JtmX
411rn.
配線■α3.配線104の線幅は50μm、膜厚は20
0nmである、又、ボンディングパッドα9.αeの大
きさは300IJrn×300μm、膜厚は300nm
である。Wiring■α3. The line width of the wiring 104 is 50 μm, and the film thickness is 20 μm.
0 nm, and the bonding pad α9. The size of αe is 300IJrn×300μm, and the film thickness is 300nm.
It is.
次に動作について説明する。素子全体を基板(2)ごと
液体ヘリウムに浸すなどして冷却し、超電導状態に転移
させる。超電導体内では電子クーパーペアと呼ばれる対
を形成している。このクーパーベアの往来により、ジョ
セフソン素子(61,(71にはそれぞれ位相差θ1.
θ2に依存した直流ジョセフソン電流11. I2が
それぞれ猾れる。ここでθ、。Next, the operation will be explained. The entire device, together with the substrate (2), is immersed in liquid helium to cool it and transform it into a superconducting state. Inside the superconductor, electrons form pairs called electron Cooper pairs. Due to the movement of this Cooper Bear, the Josephson elements (61, (71) each have a phase difference of θ1.
DC Josephson current depending on θ2 11. I2 can be examined respectively. Here θ,.
θ2はそれぞれ主コイル(31と上部電極(41を形成
する超電導体の位相差、主コイル+31と上部電極(5
)を形成する超電導体の位相差である。これより、ボン
ディングパッドfiター舖間に流すことの出来る超電導
電流Iは第+11式のようになる。θ2 is the phase difference between the superconductors forming the main coil (31) and the upper electrode (41), the main coil +31 and the upper electrode (5
) is the phase difference of the superconductor forming the superconductor. From this, the superconducting current I that can be passed between the bonding pads becomes as shown in equation +11.
1 = 11 + 12 = IC(sinθ1 +3
10#2 )ここでIcはジョセフソン素子+61.
(71それぞれの臨界電流値である。1 = 11 + 12 = IC(sinθ1 +3
10#2) Here, Ic is a Josephson element +61.
(These are the critical current values for each of 71.
一方、超電導リングにおけるフラクソイドの量子化条件
から、超電導リング(31に鎖交する磁束φと01.θ
2との間には第+21式のような関係が成立する。On the other hand, from the quantization conditions of fluxoid in the superconducting ring, it is found that the magnetic flux φ interlinking with the superconducting ring (31 and 01.θ
2, a relationship such as the +21st equation holds true.
φ+(”’)(#1−02)=n<Ilo (n:j
I数)−1212π
ただし、I0は8束量子であり、その大きさは2.07
X10 wbである。第+11式、第(2)式よりθ
1−02を消去すると。φ+(”')(#1-02)=n<Ilo (n:j
I number) -1212π However, I0 is an 8-bundle quantum, and its size is 2.07
It is X10 wb. From equation +11 and equation (2), θ
When 1-02 is deleted.
となる。これより、ボンディングパッドaターαθ間に
電位差を生じることなく流すことの出来る超電導電流の
最大値1mは第(4)式のようになり、鎖交6束φの関
数となる。becomes. From this, the maximum value 1 m of the superconducting current that can be passed without generating a potential difference between the bonding pads a and αθ is expressed by equation (4), which is a function of the six interlinkage bundles φ.
第(4)式より1mはφ=nφ0の時に最大値2fc。From equation (4), 1m has a maximum value of 2fc when φ=nφ0.
φ=(n+1/2)I0の時に最小値0の値をとり。The minimum value is 0 when φ=(n+1/2)I0.
φに対して$束量子φ0を周期として変化することがわ
かる。ただしこれは超電導リングのインダクタンスが0
0場合の話であり、実際KFi有限のインダクタンスを
有すため、最小値は0とはならない。It can be seen that the $ flux quantum φ0 changes with respect to φ. However, this means that the inductance of the superconducting ring is 0.
This is a case of 0, and since KFi actually has a finite inductance, the minimum value will not be 0.
DC−8QUIDのこのような電流−電圧(1−v)特
性を示したのが第11図(a)であり、 r −v
特性はφ=nφ0.φ=(n+1/2)I0の時にそ
れぞれ第11図(al中の曲線0.曲線りのようになり
、φの値に応じてこの間をI0を周期として連続的に変
化する。そこでφ=nφ0の時の臨界電流値ICIより
も若干大きな直流バイアス電流Ibを配線!α3.配線
1ti4f通して流し、ボンディングパッドαS −a
S間の電位差Vを測定するとV#iφに対して研束量子
φot−周期として第11図(blOように変化する。Figure 11 (a) shows such current-voltage (1-v) characteristics of DC-8QUID, where r - v
The characteristic is φ=nφ0. When φ=(n+1/2)I0, each curve becomes like the curve 0 in FIG. A DC bias current Ib that is slightly larger than the critical current value ICI at the time of wiring! α3.
When the potential difference V between S is measured, it changes as shown in FIG.
そこでこのDC−8QUIDf被測定磁界中に配置し、
被測定田界の変化を超電導リングに鎖交する磁束の変化
として獲え、電圧に変換して出力する。Therefore, this DC-8QUIDf is placed in the magnetic field to be measured,
Changes in the field to be measured are captured as changes in the magnetic flux interlinking with the superconducting ring, converted to voltage, and output.
ところで超電導体はマイスナー効果と呼ばれる完全反磁
性の性質を有しておシ、外部田束は超電導体を貫通する
ことが出来ないことは周知の裏実である。このため9例
えば第8図中のX軸方向から紙面に対して斜め下に一8
f!被測定a界イが入射した場合、主コイル(3倉付近
の磁束密度(S界強度)分布を第8図中A−Hの断面に
そって図示すると第1a図のように歪む。これはバイア
ス電流「bを猜したり、又、超電導ループに発生する電
圧を検出するために用いる配線(1)’jや配線laJ
がマイスナー効果による完全反磁性の性質を持つからで
ある、
〔発明が解決しようとする!1題〕
従来のDC−8QUIDは上記のように被測定磁界を検
出する主コイル(31の近傍に超電導体から形成される
配@TO3,配線Iα4が配置されているために被測定
磁界を歪ませてしまい、高精度な8界検出が出来ないと
いう問題点があった。具体的には特に第8図X軸方向か
ら磁界が入射すると配線ff13で反射された磁束が超
電導リングに鎖交してしまい、感度が高まってしまうと
いう問題点があった。By the way, superconductors have a completely diamagnetic property called the Meissner effect, and it is a well-known fact that external flux cannot penetrate superconductors. For this reason, 9. For example, from the X-axis direction in FIG.
f! When the field A to be measured is incident, the magnetic flux density (S field strength) distribution near the main coil (3rd column) is distorted as shown in Fig. 1a, if shown along the cross section A-H in Fig. 8. Wiring (1)'j and wiring laJ used to increase the bias current "b" and to detect the voltage generated in the superconducting loop
This is because it has a completely diamagnetic property due to the Meissner effect. Problem 1] As mentioned above, in the conventional DC-8QUID, the wiring @TO3 and the wiring Iα4 made of superconductors are arranged near the main coil (31) that detects the magnetic field to be measured, which distorts the magnetic field to be measured. There was a problem in that highly accurate 8-field detection was not possible.Specifically, when a magnetic field is incident from the X-axis direction in Figure 8, the magnetic flux reflected by wiring ff13 interlinks with the superconducting ring. There was a problem in that the sensitivity increased.
この発明は上記のような課題を解消するためになされた
もので、被測定磁界を歪ませることなく精度良く測定出
来るDC−8QUIDを得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to obtain a DC-8QUID that can accurately measure a magnetic field to be measured without distorting it.
この発明に係る超電導量子干渉素子はバイアス電流を供
給し、又、出力電圧を検出するために超電導リングに接
続した配線を非磁性の常電導材料で形成したものである
。In the superconducting quantum interference device according to the present invention, wiring connected to a superconducting ring for supplying a bias current and detecting an output voltage is formed of a non-magnetic normal conductive material.
この発明に係る超電導量子干渉素子は超電導リングに接
続した配線を非磁性の常電導材料によシ形成したため、
マイスナー効果などの被測定磁界を歪める要因がなく、
被測定磁界を精度良く測定することが出来る。In the superconducting quantum interference device according to the present invention, the wiring connected to the superconducting ring is formed of a non-magnetic normal conductive material.
There are no factors that distort the magnetic field to be measured, such as the Meissner effect.
The magnetic field to be measured can be measured with high precision.
以下、この発明の一実施例を図について説明する。第1
図はこの発明の一実施例であるDC−5QU10を示す
平面図、第2図は上記第1図における点線で囲んだジョ
セフノン素子形成部分αnの拡大図、第3図は上記第1
図ないし第2図における点線E−F間の断面図である。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a plan view showing DC-5QU10 which is an embodiment of the present invention, FIG. 2 is an enlarged view of the Josephnon element forming portion αn surrounded by the dotted line in FIG.
FIG. 3 is a sectional view taken along dotted line E-F in FIGS.
(2)〜0は上記従来の実例で説明したものである。a
Sは例えばAu、 Cu。(2) to 0 are those explained in the conventional example above. a
S is, for example, Au or Cu.
A/等の非出性常電導材料により形成した配線!。Wiring formed from non-conductive normal conductive materials such as A/! .
isは同じく非缶性常電導材料により形成した配線Iで
ある。ここでは主コイル(3)を覆う第二の絶縁層側の
一部を従来の実施例と比べて縮少させて主コイル13+
の一部?無出させ、配線1(llif主コイル(31に
接続した場合を示している、第2図においてCl5Fi
接続電極であり、従来の実施例における配線■α5と同
様、シャント抵抗(8)、(9)、及び接続層a9と接
続している。この接続電極123はシャント抵抗+81
. +91との接続を確実にするため主コイル(3)と
同じ超電導薄膜により形成されている。配線1 aSは
上記接続電極■に接続している。■、 1211はそれ
ぞれ配線tns、配線璽【9の先端に接続したボンディ
ングパッドである、−例として、配線1tlll、配線
1 (19の線幅は50μm、膜厚は900nmであり
、ボンディングパッド■、 crtの大きさは300μ
mX300μm、膜厚は300nmである。is is a wiring I formed of a non-conductive normal conductive material. Here, a part of the second insulating layer side covering the main coil (3) is reduced compared to the conventional embodiment, and the main coil 13+
Part of? Cl5Fi in Figure 2 shows the case where it is connected to the wiring 1 (llif main coil (31).
This is a connection electrode, and is connected to the shunt resistors (8), (9) and the connection layer a9, similar to the wiring (2) α5 in the conventional embodiment. This connection electrode 123 has a shunt resistance of +81
.. In order to ensure the connection with +91, it is made of the same superconducting thin film as the main coil (3). Wiring 1 aS is connected to the above connection electrode (3). ■, 1211 are the bonding pads connected to the ends of the wiring tns and wiring [9], respectively. - For example, the wiring 1tll and the wiring 1 (the line width of 19 is 50 μm and the film thickness is 900 nm, and the bonding pads ■, The size of crt is 300μ
m×300 μm, and the film thickness is 300 nm.
次にこの発明によるDC−8QUIDの動作について駁
明する。素子全体を基板(2)ごと液体ヘリウムに浸す
などして冷却し、超電導材料によシ形成されている部分
を超電導状態に転移させる。従来と同様に、主コイル(
3)、上部電極(41,(51,接続層all。Next, the operation of the DC-8QUID according to the present invention will be explained. The entire device, together with the substrate (2), is cooled by immersing it in liquid helium, etc., and the portion formed of the superconducting material is transformed into a superconducting state. As before, the main coil (
3), upper electrode (41, (51, connection layer all).
接続型5cizから構成される超電導リングくフラクソ
イドの量子化条件が成立し、超電導リングに電位差を生
じることなく流すことの出来る超電導電流の大きさは第
(4)式のように鎖交6束φの関数となり、TB東量子
φ0を周期として変化する。これに対応してH−v特性
もφ0を周期として変化する。第4図(alけこの発明
によるDC−8QUIDのボンディングパッドクー12
9間のI−V%性であり1曲線G1曲線Hはそれぞれφ
=nφ0.φ=(n+1/2 )φ0の時の1−v特性
に相当する。第11図に示した従来の場合と異なり、I
(IC,又はI<IC2の範囲で抵抗が存在している。The quantization conditions for the superconducting ring fluxoid composed of connected 5ciz are satisfied, and the magnitude of the superconducting current that can flow through the superconducting ring without creating a potential difference is the interlinking 6 flux φ as shown in equation (4). It becomes a function of , and changes with the period of TB East quantum φ0. Correspondingly, the H-v characteristic also changes with the period φ0. FIG. 4 (Bonding pad 12 of DC-8QUID according to the invention of al.
The I-V% characteristics between 9 and 1 curve G1 curve H are each φ
=nφ0. This corresponds to the 1-v characteristic when φ=(n+1/2)φ0. Unlike the conventional case shown in FIG.
(Resistance exists in the range of IC or I<IC2.
これは配線1tll、配線(1)9を常電導材料で形成
しているためであり、この抵抗値は高々1Ω糧度である
。1b> IC1なる直流バイアス電流11)を流すこ
とにより、従来と同様に鎖交磁束φに対しφ0を周期と
した出力電圧を取り出す。次に一例として第1図中のX
軸方向から紙面に対して斜め下に−様な被測定缶外イが
入射した場合の主コイル(3)付近の田束密度(磁界強
度)分布を第3図に示す。配線!α9.配線1a!Iが
非母性の常電導材料により形成されているため、素子を
被測定磁界中に置いても磁界を歪めることなく精度良く
測定することが出来る。ここで被測定磁界の強度をB、
主コイル(31,上部電極(41゜(51,接続層a1
1.接続電極■から構成される超電導リングの面積をS
、この超電導リングを含む平面。This is because the wiring 1tll and the wiring (1) 9 are formed of a normal conductive material, and the resistance value thereof is at most 1Ω. 1b> By flowing a DC bias current 11) IC1, an output voltage having a period of φ0 for the interlinkage magnetic flux φ is obtained as in the conventional case. Next, as an example,
FIG. 3 shows the field flux density (magnetic field strength) distribution in the vicinity of the main coil (3) when the outside of the can to be measured is incident diagonally downward from the axial direction with respect to the plane of the paper. wiring! α9. Wiring 1a! Since I is made of a non-maternal normally conducting material, even if the element is placed in a magnetic field to be measured, the magnetic field can be accurately measured without distorting it. Here, the strength of the magnetic field to be measured is B,
Main coil (31, upper electrode (41° (51, connection layer a1
1. The area of the superconducting ring composed of the connecting electrodes is S
, the plane containing this superconducting ring.
すなわち基板(2)と被測定磁界とがなす角度θを第5
図のように定めると、φとBとの間には第(51式のよ
うな関係が成立し、DC−8QUIDは外部磁界に対し
てベクトルセンサとして動作する。In other words, the angle θ between the substrate (2) and the magnetic field to be measured is
When determined as shown in the figure, a relationship such as the formula (51) is established between φ and B, and the DC-8QUID operates as a vector sensor with respect to an external magnetic field.
φ=B・ sinθ ・・・・・・・・・
(5)なお、φ0の何周期分圧も相当する広い入力6束
範囲に渡って入出力間の線形性を維持出来ればa力計と
して便利であるが、入出力間の線形を維持するためKD
C−8QUIDを磁力計として使用する際には第6図に
示すような駆動回路が用いられる場合が多い。この駆動
回路けFlux−LockedLOOp回路と呼ばね9
例えばReview of ScientificIn
strument Vol、 55.19114年の第
952頁〜第957頁等に詳細な説明が記載されている
公知のものである。第6図においてのは直流電流源、Q
aFi発揚器、■は前置増幅器、■は位相検波器、■は
積分器、■は帰還抵抗、019は主コイル(3)と磁気
的に結合した変調帰還コイルである。次に第6図に示し
た駆動回路の動作について述べる。直流電流源■からバ
イアス電流よりを流し9次に発振器@から変調帰還コイ
ル■を介して例えば周波数f=IQOKHzの正弦波変
調磁束を加える。ここでφ=nφ0でDC−8QUID
の動作点が第4図(b)中の工又は1点に設定されてい
るとボンディングパッド■。φ=B・sinθ ・・・・・・・・・
(5) It would be convenient as an a-force meter if linearity between input and output could be maintained over a wide range of 6 inputs, which corresponds to many cycles of partial pressure of φ0, but it is necessary to maintain linearity between input and output. KD
When using the C-8QUID as a magnetometer, a drive circuit as shown in FIG. 6 is often used. This drive circuit is called the Flux-LockedLOOp circuit9.
For example, Review of ScientificIn
This is a well-known method whose detailed explanation is described in pages 952 to 957 of Strument Vol. 55.19114. In Figure 6, it is a direct current source, Q
aFi oscillator, ■ is a preamplifier, ■ is a phase detector, ■ is an integrator, ■ is a feedback resistor, and 019 is a modulation feedback coil magnetically coupled to the main coil (3). Next, the operation of the drive circuit shown in FIG. 6 will be described. A bias current is passed from a DC current source (2), and then a sinusoidal modulated magnetic flux of, for example, frequency f=IQOKHz is applied from an oscillator @ via a modulation feedback coil (2). Here, φ=nφ0 and DC-8QUID
If the operating point of is set to 1 or 1 in FIG. 4(b), the bonding pad ■.
l2f1間に発生する出力電圧の周波数は2fになる。The frequency of the output voltage generated between l2f1 is 2f.
又、動作点かに点にあれば変調信号と同相で周波数がf
の電圧が出力される。逆に動作点がL点にあれば変調信
号と逆相で周波数がfの電圧が出力される。このような
性質を持つ出力電圧を前電増幅器■で増幅した後0位相
検波器■を用いて周波数fで位相検波する。位相検波器
■の出力は積分器■によシ積分され、帰還抵抗■を流れ
る帰還電iffとして変調帰還コイル■からDC−8Q
UIDに負帰還される。この負帰還によシ動作点は常に
工点又FiJ点、すなわち極大又は極小の位置に固定さ
れ、被測定磁界の変化量に比例した出力を帰還抵抗のに
発生する電位差として得ることが出来る。以上がこの駆
動回路の動作原理であるが、ここで変調帰還コイル■を
例えば第7図に示すように主コイル+31を覆う第二の
絶縁層αり上にストリップラインとして一体化して形成
すれば振動などの外乱に対して主コイル(3:との位置
関係が常に一定に保たれ、主コイル(3)と変調帰還コ
イル■との相互インダクタンスの値が安定し、測定系の
信頼性が向上する。Also, if the operating point is at the point, it is in phase with the modulation signal and the frequency is f.
voltage is output. Conversely, if the operating point is at the L point, a voltage with a frequency of f and a phase opposite to the modulation signal is output. The output voltage having such characteristics is amplified by a preamplifier (2) and then phase detected at a frequency f using a 0-phase detector (2). The output of the phase detector ■ is integrated by the integrator ■, and the feedback voltage iff flowing through the feedback resistor ■ is sent from the modulation feedback coil ■ to DC-8Q.
Negative feedback is given to UID. Due to this negative feedback, the operating point is always fixed at the working point or FiJ point, that is, the maximum or minimum position, and an output proportional to the amount of change in the magnetic field to be measured can be obtained as a potential difference generated across the feedback resistor. The above is the operating principle of this drive circuit. For example, if the modulation feedback coil (2) is formed integrally as a strip line on the second insulating layer (α) covering the main coil +31 as shown in FIG. The positional relationship with the main coil (3) is always kept constant against disturbances such as vibration, and the mutual inductance between the main coil (3) and the modulation feedback coil ■ is stabilized, improving the reliability of the measurement system. do.
一例として、このストリップラインの構造は。As an example, this stripline structure.
主コイル(31の線幅が15μm、膜厚が200nm、
第二絶縁層13の膜厚が5QQnm、変調帰還コイ
ル四の線幅が5μm、膜厚が900nmである。Main coil (line width of 31 is 15 μm, film thickness is 200 nm,
The second insulating layer 13 has a thickness of 5QQnm, the modulation feedback coil 4 has a line width of 5 μm, and a thickness of 900 nm.
なお、■、 C3nは変調帰還コイル■の先端に接続し
て配管したボンディングパッドである。−例として、そ
の大きさは300μmX300μm、膜厚は300 n
mである。製造プロセスを容易にする目的で従来は変調
帰還コイル■を保線部anと同じ超電導材料で形成して
いた。このため、マイスナー効果による完全反磁性によ
シ主コイル(3)に鎖交する被測定磁界を歪ませてしま
うという問題点があった、そこでこの変調帰還コイルを
配線IQII、配線109と共に例えばCu、 A/、
Auなどの非母性の常電導金属で形成すれば、被測定
磁界を精度よく測定出来る。Note that 2 and C3n are bonding pads connected to the tip of the modulation feedback coil 2. - As an example, its size is 300 μm x 300 μm, and the film thickness is 300 nm.
It is m. Conventionally, the modulation feedback coil (2) was formed of the same superconducting material as the wire maintenance part (an) in order to facilitate the manufacturing process. For this reason, there was a problem in that the magnetic field to be measured interlinked with the main coil (3) was distorted due to the complete diamagnetism caused by the Meissner effect. , A/,
If it is made of a non-maternal normally conducting metal such as Au, the magnetic field to be measured can be measured with high accuracy.
またさらに、製造プロセスを容易にする目的で従来はボ
ンディングパッドaS、αe、及び■、any超電導材
料で形成していた。このためマイスナー効果による完全
反磁性の性質を有するボンディングパッドが例えば4(
1)m ×4 flの基板(2)上で主コイル(3)の
近くに配置され、配線!α3や配線iaaと同\
じように被測定磁界を歪ませていた。これらのボンデイ
ングパッドを例えばCu、 A/、 Auなどの非母
性の常電導金属により形成すればマイスナー効果の影響
がなくなり、被測定磁界を歪めることなく精度よく測定
することが出来る。Furthermore, for the purpose of facilitating the manufacturing process, bonding pads aS, αe, and ■, have conventionally been formed of any superconducting material. For this reason, a bonding pad with completely diamagnetic properties due to the Meissner effect, for example 4 (
1) Placed near the main coil (3) on the m x 4 fl board (2) and wired! It distorted the magnetic field to be measured in the same way as α3 and wiring iaa. If these bonding pads are made of a non-maternal normally conducting metal such as Cu, Al/Au, etc., the influence of the Meissner effect is eliminated, and the magnetic field to be measured can be measured with high accuracy without being distorted.
以上の説明のように、この発明に係るDC−8QUID
は、DC−8QUIDの超電導リングに接続した配aを
例えばAJ +CuやAu等の非母性の常電導物質で形
成したため、被測定磁界を歪めることなく精度よく測定
出来るという効果がある。なお。As explained above, the DC-8QUID according to this invention
Since the wiring a connected to the superconducting ring of the DC-8QUID is formed of a non-maternal normal conductive material such as AJ+Cu or Au, the magnetic field to be measured can be measured accurately without being distorted. In addition.
超電導リングに磁気的に結合した変調帰還コイル。Modulating feedback coil magnetically coupled to a superconducting ring.
上記配線や変調帰還コイルの先端に配電したボンディン
グパッドを同様に非母性の常電導物質で形成すればさら
に精度良く測定を行なえるという効果がある。If the wiring and the bonding pad for distributing power to the tip of the modulation feedback coil are similarly made of a non-maternal normal conductive material, there is an effect that measurement can be carried out with even higher accuracy.
第1図はこの発明の一実施例であるDC−8QUIDを
示す平面図、第2図は上記第1図におけるジョセフソン
素子形成部分aηの拡大平面図、第3図は上記第1図に
おけるE−1間の断面図とE−1間の被測定出界強変分
布図、第4図は上記実施例におけるDC−8QUIDの
wi−it電圧特性 及び出力電圧特性の例示図、第5
図は上記実施例における被測定磁界の入射角度の例示図
、第6図けFlux−Locked LQOT)駆動回
路の構成図、第7図はこの発明のさらに仲の発明による
DC−8QUID の平面図、第8図は従来のDC−5
QUIDの平面図、 第9図は上記第8図におけるジョ
セフソン素子形成部分+11の拡大平面図、第10図は
第8図におけるA−B間の断面図とA−B間の被測定缶
外強度分布図、第11図は従来のDC−8QUIDの電
流−電圧特性、及び出力電圧特性の例示図である。
図において、(3)は主コイル、 141.151は上
部電極。
161、 +71はジョセフソン素子、α9は接続層、
■は接続電極、α・は配線!、α9は配線璽、■、 2
+1はボンディングパッド、■は変調帰還コイル、 3
m、 (Illはボンディングパッドである。
図中、同一符号は同−又は相当部分を示す。FIG. 1 is a plan view showing a DC-8QUID which is an embodiment of the present invention, FIG. 2 is an enlarged plan view of the Josephson element forming portion aη in FIG. -1 to E-1 and the measured output field strong variation distribution diagram to E-1.
The figures show an example of the incident angle of the magnetic field to be measured in the above embodiment, Fig. 6 is a configuration diagram of the Flux-Locked LQOT (Flux-Locked LQOT) drive circuit, and Fig. 7 is a plan view of the DC-8QUID according to the further invention of the present invention. Figure 8 shows the conventional DC-5
A plan view of the QUID, FIG. 9 is an enlarged plan view of the Josephson element forming portion +11 in FIG. 8, and FIG. 10 is a sectional view between A and B in FIG. The intensity distribution diagram, FIG. 11, is an illustrative diagram of the current-voltage characteristics and output voltage characteristics of the conventional DC-8QUID. In the figure, (3) is the main coil, and 141 and 151 are the upper electrodes. 161, +71 is a Josephson element, α9 is a connection layer,
■ is the connection electrode, α・ is the wiring! , α9 is the wiring seal, ■, 2
+1 is bonding pad, ■ is modulation feedback coil, 3
m, (Ill is a bonding pad. In the figures, the same reference numerals indicate the same or corresponding parts.
Claims (3)
上記超電導リングに接続された非磁性の常電導物質で形
成してなる配線とを具備したことを特徴とする超電導量
子干渉素子。(1) A superconducting ring including two Josephson elements,
A superconducting quantum interference device comprising: a wiring formed of a non-magnetic normal conductive material connected to the superconducting ring.
導物質より形成してなる変調帰還コイルとを具備したこ
とを特徴とする特許請求の範囲第(1)項記載の超電導
量子干渉素子。(2) A superconducting quantum interference element according to claim (1), comprising: a modulation feedback coil formed from a non-magnetic normal conductive material magnetically coupled to a superconducting ring. .
の先端に接続した非磁性の常電導材料で形成してなるボ
ンディングパッドを備えたことを特徴とする特許請求の
範囲第(1)項又は第(2)項記載の超電導量子干渉素
子。(3) A bonding pad formed of a non-magnetic normal conductive material connected to a wiring connected to a superconducting ring or a tip of a modulation feedback coil is provided. The superconducting quantum interference device described in (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63177703A JPH067155B2 (en) | 1988-07-16 | 1988-07-16 | Superconducting quantum interference device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63177703A JPH067155B2 (en) | 1988-07-16 | 1988-07-16 | Superconducting quantum interference device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0227280A true JPH0227280A (en) | 1990-01-30 |
| JPH067155B2 JPH067155B2 (en) | 1994-01-26 |
Family
ID=16035628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63177703A Expired - Fee Related JPH067155B2 (en) | 1988-07-16 | 1988-07-16 | Superconducting quantum interference device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH067155B2 (en) |
-
1988
- 1988-07-16 JP JP63177703A patent/JPH067155B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH067155B2 (en) | 1994-01-26 |
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