JPH02281704A - Thin film platinum temperature sensor - Google Patents

Thin film platinum temperature sensor

Info

Publication number
JPH02281704A
JPH02281704A JP1103869A JP10386989A JPH02281704A JP H02281704 A JPH02281704 A JP H02281704A JP 1103869 A JP1103869 A JP 1103869A JP 10386989 A JP10386989 A JP 10386989A JP H02281704 A JPH02281704 A JP H02281704A
Authority
JP
Japan
Prior art keywords
thin film
platinum
temperature sensor
film resistor
platinum temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1103869A
Other languages
Japanese (ja)
Inventor
Kazuhiro Onaka
和弘 尾中
Kazuo Ogata
一雄 緒方
Kazuhisa Matsumoto
和久 松本
Hideyuki Tanigawa
秀之 谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1103869A priority Critical patent/JPH02281704A/en
Publication of JPH02281704A publication Critical patent/JPH02281704A/en
Pending legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、自動車用、家庭電化製品用、及び工業計器等
に使用される薄膜白金温度センサに関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film platinum temperature sensor used in automobiles, household appliances, industrial instruments, and the like.

従来の技術 従来の温度センサは、高精度ではあるが、高価で取扱が
煩わしいものと、簡便で大量に使用できるが、精度が悪
いものとに大別でき、用途に応じて使い分けられている
。
BACKGROUND OF THE INVENTION Conventional temperature sensors can be broadly divided into those that have high accuracy but are expensive and cumbersome to handle, and those that are simple and can be used in large quantities but have poor accuracy, and are used depending on the purpose.

しかしながら、最近のエレクトロニクスの急激な進歩に
より、堅牢で大量に使用ができかつ高精度な温度センサ
が要求されるようになってきた。
However, recent rapid advances in electronics have created a need for temperature sensors that are robust, can be used in large quantities, and have high accuracy.

特に、自動車用の精密温度センサについては、安価でか
つ小型で精度が高く、温度範囲が広く、直線的な抵抗値
変化をし、また振動に対して強く、熱応答性の良いもの
が要求されている。従来よシ。
In particular, precision temperature sensors for automobiles are required to be inexpensive, compact, highly accurate, have a wide temperature range, have linear resistance changes, be resistant to vibration, and have good thermal response. ing. Traditionally.

精密温度センサとしては、白金測温抵抗対が用いられて
いるが、白金線を使用するため抵抗値は、60Ω、10
0Ωと低く、そのため周辺回路が複雑になり、また周辺
回路の雑音などの影響をうけやすいという問題があった
。併せて形状も大きく。
A platinum resistance thermometer pair is used as a precision temperature sensor, but since platinum wire is used, the resistance value is 60Ω, 10Ω.
This has the problem of complicating peripheral circuits and being susceptible to noise from peripheral circuits. The shape is also large.

更に振動及び衝撃に弱く、更に白金線を細くすることに
は限界があるので、高価な白金線を1本ずつセラミック
ボビンなどに巻き付けて作成するため大量生産は不可能
であって、相当高価なものとなっていた。
Furthermore, it is susceptible to vibration and shock, and there is a limit to how thin the platinum wire can be made, so mass production is impossible because expensive platinum wire is wound one by one around a ceramic bobbin, etc., and it is quite expensive. It had become a thing.

このような問題点を解決するために、白金線の代わりに
白金の厚膜や薄膜を用いた温度センサが開発されている
。しかし、厚膜白金温度センサは。
In order to solve these problems, temperature sensors using thick or thin platinum films instead of platinum wires have been developed. However, thick film platinum temperature sensors.

スクリーン印刷技術によるため100μm以下の微細\
パターンが困難、製造上のばらつきが大きいなどの欠点
を有している。
Fine print of less than 100 μm due to screen printing technology
It has drawbacks such as difficulty in patterning and large manufacturing variations.

一方、薄膜白金温度センサは、パターンの微細化が容易
なため小型化でき、また高抵抗化による高感度化を図れ
、更に機械的強度が強く、ウニノー−処理によってばら
つきが小さくでき、量産に適し、低価格化が可能である
等の長所を有する。
On the other hand, thin-film platinum temperature sensors can be miniaturized because the pattern can be made finer, and have higher sensitivity due to higher resistance.Also, they have strong mechanical strength and can reduce variations through Uni-No treatment, making them suitable for mass production. It has advantages such as low cost.

発明が解決しようとする課題 薄膜白金温度センサの製造方法としては、真空蒸着法、
スパッタリング法、CVD法等によシ絶縁基板上に数千
オングストローム膜厚の白金薄膜抵抗体を形成させ、湿
式エツチング法、スパッタエツチング法等の方法で微細
パターン化する。さらに、大気中で900〜1ooo℃
の高温で熱処理を行う。その後、トリミングによる抵抗
値調整、リード線取り出し、保護膜コーティングを行う
。
Problems to be Solved by the Invention Methods for manufacturing thin film platinum temperature sensors include vacuum evaporation,
A platinum thin film resistor having a thickness of several thousand angstroms is formed on an insulating substrate by sputtering, CVD, or the like, and then finely patterned by wet etching, sputter etching, or the like. Furthermore, 900~1ooo℃ in the atmosphere
Heat treatment is performed at high temperatures. After that, the resistance value is adjusted by trimming, the lead wire is taken out, and a protective film is coated.

この際、絶縁基板としては、アルミナ基板などが用いら
れる。しかし、アルミナ基板上の片側のみに白金薄膜抵
抗体を形成させる現在の方式では、基体の表面積に限シ
があるため、感温部である白金膜の放熱効果の向上に限
界があり、熱応答性の向上が困難であった。更に白金固
有の比抵抗は決まっているため、高抵抗化による高感度
化は白金パターンを細かくするか、白金膜の厚みを薄く
するか、または基板を大きくする方法しかなかった。
At this time, an alumina substrate or the like is used as the insulating substrate. However, with the current method of forming a platinum thin film resistor on only one side of an alumina substrate, the surface area of the substrate is limited, so there is a limit to improving the heat dissipation effect of the platinum film, which is the temperature sensing part, and the thermal response It was difficult to improve sexual performance. Furthermore, since the specific resistance of platinum is fixed, the only way to increase sensitivity by increasing resistance is to make the platinum pattern finer, the platinum film thinner, or the substrate larger.

このため機械的強度と抵抗温度特性の低下が著しく、ま
た超微細パターンを形成すると、パターン切れ発生など
の恐れがあった。さらに流体の温度を測定する際、流体
の流れてくる方向と、パターンの方向との組合せによっ
て、応答速度にばらつきが生じる恐れがあり、多方向の
流れを持つ流体の測定は困難であった。
As a result, mechanical strength and resistance-temperature characteristics deteriorate significantly, and when ultra-fine patterns are formed, there is a risk of pattern breakage. Furthermore, when measuring the temperature of a fluid, there is a risk that the response speed may vary depending on the combination of the direction in which the fluid flows and the direction of the pattern, making it difficult to measure fluids that flow in multiple directions.

以上のように、従来の白金薄膜の付着方法では多くの問
題があった。
As described above, the conventional method of depositing a platinum thin film has many problems.

本発明は、これらの問題点を鑑み、熱応答速度が早く、
測定精度が良く、形状を小型化した薄膜白金温度センサ
を提供することを目的とするものである。
In view of these problems, the present invention has a fast thermal response speed,
The object of the present invention is to provide a thin film platinum temperature sensor that has good measurement accuracy and is compact in size.

課題を解決するための手段 上記目的を達成するために、本発明は、絶縁基板の両面
に各々白金薄膜抵抗体と電極を有し、各白金薄膜抵抗体
をスルーホールにて導通させ、前記白金薄膜抵抗体のパ
ターンはそれぞれ異なった方向に配設されたことを特徴
とするものである。
Means for Solving the Problems In order to achieve the above object, the present invention has a platinum thin film resistor and an electrode on both sides of an insulating substrate, each platinum thin film resistor is electrically connected through a through hole, and the platinum The thin film resistor patterns are characterized in that they are arranged in different directions.

作用 本発明は、上記した基板の両面に感温部の白金薄膜抵抗
体を形成し、基板を大きく、またパターンを細かくする
ことなく感温部の白金薄膜抵抗体の面積を増加させて放
熱効果を向上させると共に、センサ自身の精度と熱応答
速度の向上を図る。さらに両面の白金薄膜抵抗体パター
ンの方向を変えて流体の方向に対する熱応答速度のばら
つきの減少もできる。
Function The present invention forms the platinum thin film resistor of the temperature sensitive part on both sides of the above-mentioned substrate, and increases the area of the platinum thin film resistor of the temperature sensitive part without making the board large or the pattern fine. In addition to improving the accuracy and thermal response speed of the sensor itself. Furthermore, by changing the direction of the platinum thin film resistor patterns on both sides, it is possible to reduce variations in thermal response speed with respect to the direction of the fluid.

実施例 以下、本発明の一実施例を添付の図面を用いて説明する
。
Embodiment Hereinafter, one embodiment of the present invention will be described with reference to the accompanying drawings.

第1図において、1は幅3mn、長さ10+++m、厚
さ0.5mのアルミナ基板である。2!L 、2bはC
VD法により白金を約0.6μm着膜しスパッタエツチ
ング法によりパターン形成された白金薄膜抵抗体で、ア
ルミナ基板1の両面に形成されており、一方の面の白金
薄膜抵抗体2&はアルミナ基板1の短手方向に、他方の
面の白金薄膜抵抗体2bはアルミナ基板1の長手方向に
平行なパターンとなっている。3はこの白金薄膜抵抗体
2と接続されるリード線引き出し用の電極、4は基板の
両面に設けた白金薄膜抵抗体2を導通させるスルーホー
ル、5は白金薄膜抵抗体2を被覆するSiO□からなる
保護膜である。また6は電極3に接続されるリード線で
ある。
In FIG. 1, 1 is an alumina substrate having a width of 3 mm, a length of 10+++ m, and a thickness of 0.5 m. 2! L, 2b is C
The platinum thin film resistor is formed by depositing platinum to a thickness of approximately 0.6 μm using the VD method and patterning it using the sputter etching method, and is formed on both sides of the alumina substrate 1. The platinum thin film resistor 2b on the other side has a pattern parallel to the longitudinal direction of the alumina substrate 1. Reference numeral 3 denotes an electrode for leading out a lead wire connected to this platinum thin film resistor 2, 4 a through hole provided on both sides of the substrate for making the platinum thin film resistor 2 conductive, and 5 a SiO□ covering the platinum thin film resistor 2. It is a protective film consisting of. Further, 6 is a lead wire connected to the electrode 3.

本実施例における温度センサの熱時定数として。As the thermal time constant of the temperature sensor in this example.

温度センサを20℃から100℃の雰囲気に移した時の
20℃と100℃の温度差との63.2 %に相当する
抵抗値に達するまでの時間を測定したところ1片面のみ
に白金抵抗膜を付けたものに比べ約1/4となり、熱応
答性が大幅に改善された。さらに流体の方向性による熱
応答速度のばらつきは、表裏同一方向にパターンを配設
したものと比較して、最大値で約1/2となった。
When the temperature sensor was moved from 20°C to 100°C, we measured the time it took to reach a resistance value equivalent to 63.2% of the temperature difference between 20°C and 100°C. The thermal response was approximately 1/4 of that of the one with . Furthermore, the maximum variation in thermal response speed due to the directionality of the fluid was about 1/2 compared to the case where patterns were arranged in the same direction on the front and back sides.

発明の効果 以上のように、本発明によれば、基板の両面に白金薄膜
抵抗体を形成し、さらに表裏異なった白金薄膜抵抗体パ
ターンの方向に配設することにより、薄膜白金温度セン
サとしては、アルミナ基板の大きさを大きくすることな
く熱応答性が速く、放熱効果が向上し、測定精度に優れ
、流体の方向による測定ばらつきが少ない温度センサを
実現できるものである。
Effects of the Invention As described above, according to the present invention, by forming platinum thin film resistors on both sides of a substrate and arranging the platinum thin film resistor patterns in different directions on the front and back sides, a thin film platinum temperature sensor can be used. , it is possible to realize a temperature sensor with fast thermal response, improved heat dissipation effect, excellent measurement accuracy, and less measurement variation depending on the direction of fluid without increasing the size of the alumina substrate.

【図面の簡単な説明】[Brief explanation of drawings]

第1図a、b、cは本発明の一実施例による薄膜白金温
度センサの表面図、裏面図及び断面図である。 1・・・・・・アルミナ基板、2N、2b・・・・・・
白金薄膜抵抗体、3・・・・・・電極、4・・・・・・
スルーホール、6・・・・・・保護膜、6・・・・・・
リード線。 代理人の氏名 弁理士 粟 野 重 孝 ほか1名菓 
l 図 /−フルミツ鼻環え ム、 Zb−臼企簿頃尽坑体 3− 電極 4−−−ス)レーホーンレ 5− 保接り爽 乙−・−シード碌
Figures 1a, b, and c are a front view, a back view, and a sectional view of a thin film platinum temperature sensor according to an embodiment of the present invention. 1...Alumina substrate, 2N, 2b...
Platinum thin film resistor, 3... Electrode, 4...
Through hole, 6...Protective film, 6...
Lead. Name of agent: Patent attorney Shigetaka Awano and one other name
l Diagram/-Furumitsu nose rings, Zb-Usukikichokorojin body 3-Electrode 4--S) Lehhornre 5-Hosetsuri Sootsu--Seed 碌

Claims (1)

【特許請求の範囲】[Claims] 絶縁基板の両面に各々白金薄膜抵抗体と電極を有し、各
白金薄膜抵抗体をスルーホールにて導通させ、かつ前記
白金薄膜抵抗体のパターンをそれぞれ異なった方向に配
設したことを特徴とする薄膜白金温度センサ。
A platinum thin film resistor and an electrode are provided on both sides of an insulating substrate, each platinum thin film resistor is electrically connected through a through hole, and the patterns of the platinum thin film resistor are arranged in different directions. thin film platinum temperature sensor.
JP1103869A 1989-04-24 1989-04-24 Thin film platinum temperature sensor Pending JPH02281704A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1103869A JPH02281704A (en) 1989-04-24 1989-04-24 Thin film platinum temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1103869A JPH02281704A (en) 1989-04-24 1989-04-24 Thin film platinum temperature sensor

Publications (1)

Publication Number Publication Date
JPH02281704A true JPH02281704A (en) 1990-11-19

Family

ID=14365446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1103869A Pending JPH02281704A (en) 1989-04-24 1989-04-24 Thin film platinum temperature sensor

Country Status (1)

Country Link
JP (1) JPH02281704A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0543037U (en) * 1991-11-11 1993-06-11 株式会社村田製作所 Infrared detection thermopile
KR100419241B1 (en) * 2000-11-02 2004-02-19 주식회사 이노칩테크놀로지 Chip Resistor for High Frequency and Fabricating Method therefor
KR101020177B1 (en) * 2010-04-23 2011-03-08 지에프텍 주식회사 Temperature Sensor Using Thick Film Resistor
JP2023535769A (en) * 2020-08-27 2023-08-21 ヘレウス ネクセンソス ゲーエムベーハー Temperature sensor and method for manufacturing such temperature sensor
DE102023136205A1 (en) * 2023-12-21 2025-06-26 Innovative Sensor Technology Ist Ag Sensor element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0543037U (en) * 1991-11-11 1993-06-11 株式会社村田製作所 Infrared detection thermopile
KR100419241B1 (en) * 2000-11-02 2004-02-19 주식회사 이노칩테크놀로지 Chip Resistor for High Frequency and Fabricating Method therefor
KR101020177B1 (en) * 2010-04-23 2011-03-08 지에프텍 주식회사 Temperature Sensor Using Thick Film Resistor
JP2023535769A (en) * 2020-08-27 2023-08-21 ヘレウス ネクセンソス ゲーエムベーハー Temperature sensor and method for manufacturing such temperature sensor
DE102023136205A1 (en) * 2023-12-21 2025-06-26 Innovative Sensor Technology Ist Ag Sensor element

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