JPH0228220B2 - MAGUNETORON - Google Patents

MAGUNETORON

Info

Publication number
JPH0228220B2
JPH0228220B2 JP6356182A JP6356182A JPH0228220B2 JP H0228220 B2 JPH0228220 B2 JP H0228220B2 JP 6356182 A JP6356182 A JP 6356182A JP 6356182 A JP6356182 A JP 6356182A JP H0228220 B2 JPH0228220 B2 JP H0228220B2
Authority
JP
Japan
Prior art keywords
cathode
vane
vanes
magnetron
strap ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP6356182A
Other languages
Japanese (ja)
Other versions
JPS58181256A (en
Inventor
Masahiro Kume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP6356182A priority Critical patent/JPH0228220B2/en
Publication of JPS58181256A publication Critical patent/JPS58181256A/en
Publication of JPH0228220B2 publication Critical patent/JPH0228220B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/16Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
    • H01J23/18Resonators
    • H01J23/20Cavity resonators; Adjustment or tuning thereof

Landscapes

  • Microwave Tubes (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明はマグネトロンの改良に関する。[Detailed description of the invention] [Technical field of invention] This invention relates to improvements in magnetrons.

〔発明の技術的背景〕[Technical background of the invention]

従来のマグネトロン本体部は、第1図乃至第3
図に示されるように、中央の円筒状の陰極11を
取り囲むように複数枚の板状陽極ベイン12が放
射状に配置され、ベイン12の外端は陽極円筒1
3に固着されている。ベイン12の上下側端14
a,14bには、それぞれリング状の大小2本で
一体のストラツプ15a,15b,15c,15
dが交互にベイン12を1つおきに短絡するよう
に接続され、同一ベイン12の上端14aと下端
14bでは短絡するストラツプの大小関係は反対
となる。そして隣り合つた2枚のベイン12と陽
極円筒13内壁とで囲まれ、一部が陰極11に向
つて開かれた空間が空胴共振器16を形成し、ベ
イン遊端17と陰極11の間の作用空間18を通
じて結合したこの空胴共振器16により、マグネ
トロンの発振周波数が定まり、この発振周波数を
不要モードから分離し、安定させるのがストラツ
プである。
The conventional magnetron main body is shown in Figures 1 to 3.
As shown in the figure, a plurality of plate-shaped anode vanes 12 are arranged radially to surround a central cylindrical cathode 11, and the outer ends of the vanes 12 are connected to the anode cylinder 11.
It is fixed to 3. Upper and lower ends 14 of vane 12
a, 14b have two ring-shaped large and small integrated straps 15a, 15b, 15c, 15, respectively.
d are alternately connected to short-circuit every other vane 12, and the size relationship of the short-circuiting straps at the upper end 14a and lower end 14b of the same vane 12 is opposite. A space surrounded by the two adjacent vanes 12 and the inner wall of the anode cylinder 13 and partially open toward the cathode 11 forms a cavity resonator 16, and is located between the vane free end 17 and the cathode 11. This cavity resonator 16 coupled through the working space 18 determines the oscillation frequency of the magnetron, and the strap separates this oscillation frequency from unnecessary modes and stabilizes it.

〔背景技術の問題点〕[Problems with background technology]

上記のように構成されたマグネトロンでは、ス
トラツプのためにベインより作用空間18の上下
端部に生ずる高周波電界が変形されて陰極11を
励振し、入力部20側へ高周波電磁界を漏洩する
原因となる。そして、作用空間18を拡大した第
3図中の3点P1,P2,P3を通り、陰極軸を中心
とする円周上で測定した高周波電界分布がそれぞ
れ第4図b,c,dに示されている。図中、縦軸
は陰極11よりベイン12に向かう高周波電界強
度E、又、横軸は陰極11軸を中心とした回転角
Pであり、Pとベイン12との位置関係は第4図
aで示されている。同図は第1図の陽極、陰極構
造を直線に展開したものである。ベイン12の中
央部の点P2では高周波電界の正負の振幅は等し
いが、点P1,P3のようなベイン端部では、近く
に反対電位のストラツプ156が存在するベイン
電位は引き下げられ、電界が弱められるため正負
の振幅が大きく異なる。
In the magnetron configured as described above, the high-frequency electric field generated by the vane at the upper and lower ends of the working space 18 is deformed by the strap, which excites the cathode 11, causing the high-frequency electromagnetic field to leak to the input section 20 side. Become. Then, the high-frequency electric field distributions measured on the circumference around the cathode axis passing through three points P 1 , P 2 , and P 3 in FIG. 3, which is an enlarged view of the working space 18, are shown in FIG. 4 b, c, and 3, respectively. Shown in d. In the figure, the vertical axis is the high-frequency electric field strength E directed from the cathode 11 toward the vane 12, and the horizontal axis is the rotation angle P around the axis of the cathode 11. The positional relationship between P and the vane 12 is shown in Figure 4a. It is shown. This figure is a linear development of the anode and cathode structure shown in FIG. 1. At point P 2 in the center of the vane 12, the positive and negative amplitudes of the high-frequency electric field are equal, but at the ends of the vane, such as points P 1 and P 3 , where a strap 156 with an opposite potential exists nearby, the vane potential is lowered. Because the electric field is weakened, the positive and negative amplitudes differ greatly.

このような状況では、陰極11の感ずる高周波
電界は打ち消し合うことなく、第4図bの場合に
は、負の方向の電界を感ずる。ここまではベイン
12の一方の側端14aのみを考えたが、他端部
14bでも大小のストラツプの結合の順序が反転
しているために反対方向の高周波電界Eが生じ、
第3図の破線で示されるような電界で陰極は励振
される。上記の機構により励振された陰極11
は、入力部20を通じて第5図に示されるフイル
ターボツクス21に高周波電磁界を放射し、低域
フイルターを形成しているチヨークコイル22の
焼損、放電等を引き起こすだけでなく、フイルタ
ーボツクス21内又は、入力部20で反射し、作
用空間18に返つた高周波電磁界エネルギーは陰
極異常加熱、効率低下等マグネトロン特性を劣化
させる原因となる場合がある。それ故、従来入力
部20にλ/4チヨーク又はコンデンサーを構成
する方法、作用空間18から見た入力側インピー
ダンスを調節する方法等により、漏洩電磁界に対
する対策が行なわれてきた。しかしこのような方
法は、理論的予測が難しく、主に試行錯誤により
行われるため、時間的、経済的無駄が多く、又入
力部20やフイルターボツクス21、チヨークコ
イル22の形状位置が大きく規定されるため、低
域フイルター部の十分な効果が得られない場合が
ある等の欠点を有していた。
In such a situation, the high-frequency electric fields felt by the cathode 11 do not cancel each other out, and in the case of FIG. 4b, an electric field is felt in the negative direction. Up to this point, only one side end 14a of the vane 12 has been considered, but since the order of coupling of the large and small straps is also reversed at the other end 14b, a high frequency electric field E in the opposite direction is generated.
The cathode is excited by an electric field as shown by the broken line in FIG. Cathode 11 excited by the above mechanism
radiates a high frequency electromagnetic field to the filter box 21 shown in FIG. The high-frequency electromagnetic field energy reflected by the input section 20 and returned to the working space 18 may cause deterioration of magnetron characteristics such as abnormal heating of the cathode and reduction in efficiency. Therefore, countermeasures against the leakage electromagnetic field have conventionally been taken by configuring a λ/4 choke or a capacitor in the input section 20, by adjusting the input side impedance as seen from the working space 18, and the like. However, such a method is difficult to predict theoretically and is carried out mainly by trial and error, which results in a lot of time and economic waste.In addition, the shape and position of the input section 20, filter box 21, and choke coil 22 are largely defined. Therefore, the low-pass filter section has some drawbacks, such as not being able to provide a sufficient effect.

〔発明の目的〕[Purpose of the invention]

この発明の目的は、陰極より見た高周波電界の
振幅差を減少させることにより、上記欠点を改善
したマグネトロンを提供することである。
An object of the present invention is to provide a magnetron that improves the above-mentioned drawbacks by reducing the amplitude difference of the high-frequency electric field seen from the cathode.

〔発明の概要〕[Summary of the invention]

この発明は、ベイン遊端の上下端部と陰極との
距離を、内側ストラツプが接続された方に比べて
外側ストラツプが接続された方を短かくなるよう
に設定したマグネトロンである。
This invention is a magnetron in which the distance between the upper and lower ends of the vane free ends and the cathode is set to be shorter when the outer strap is connected than when the inner strap is connected.

〔発明の実施例〕[Embodiments of the invention]

この発明のマグネトロンの要部は第6図a,b
に示すように構成され、ベイン30,40とスト
ラツプ15a,15b,15c,15d、陰極1
1の関係を隣り合つたベインのそれぞれについて
表わしており、従来例と同一箇所は同一符号を付
すことにする(但しベインは除く)。即ち、この
発明では、上記従来の欠点を改善するために、a
の場合はベイン30の遊端の下端部にテーパー状
の切欠部31が形成されている。又、bの場合は
ベイン40遊端の上端部にテーパー状の切欠部4
1が形成されている。いずれの場合も、ベイン3
0,40の遊端の上端部又は下端部と陰極11と
の距離l1,l2を、内側ストラツプ15c,15b
が接続された方に比べて外側ストラツプ15a,
15dが接続された方を短かくなるように設定し
ている。そして、a,bのように、最短距離は隣
り合うベインでそれぞれl1,l2と異なるのである。
The main parts of the magnetron of this invention are shown in Figures 6a and b.
It is constructed as shown in FIG.
1 is shown for each adjacent vane, and the same parts as in the conventional example are given the same reference numerals (excluding the vanes). That is, in this invention, in order to improve the above-mentioned conventional drawbacks, a
In this case, a tapered notch 31 is formed at the lower end of the free end of the vane 30. In the case of b, there is a tapered notch 4 at the upper end of the free end of the vane 40.
1 is formed. In either case, Bain 3
The distances l 1 and l 2 between the upper or lower ends of the free ends of the inner straps 15c and 15b and the cathode 11 are
The outer strap 15a,
The length where 15d is connected is set to be shorter. Then, as in a and b, the shortest distances are different from l 1 and l 2 for adjacent vanes, respectively.

一方、陰極11軸よりベイン30,40表面ま
での半径をra、表面での高周波電界をEaとする
と、作用空間18内の半径rの点での高周波電界
E(r)は近似的に次の関係がある。
On the other hand, if the radius from the axis of the cathode 11 to the surface of the vanes 30, 40 is ra, and the high-frequency electric field at the surface is Ea, then the high-frequency electric field E(r) at a point with radius r in the working space 18 is approximately as follows. There is a relationship.

E(r)/Ea=(r/ra)N/2 ……(1) 但し、Nはベイン30,40の枚数でありπモ
ードの発振時を考えている。よつて端部の隣り合
うベイン30,40表面の高周波電界振幅をそれ
ぞれE1,E2、又この端部でのベイン30,40
から最短距離にある陰極11部分の半径をrcとす
ると、 (l1+rc/l2+rc)N/2=E1/E2 ……(2) を満足するようにl1,l2を選ぶことにより、陰極
11を励振する高周波電界は大幅に低減される。
E(r)/Ea=(r/ra) N/2 ...(1) However, N is the number of vanes 30 and 40, and the case of π mode oscillation is considered. Therefore, the high frequency electric field amplitudes on the surfaces of the vanes 30 and 40 adjacent to each other at the ends are E 1 and E 2 respectively, and the vanes 30 and 40 at this end are
If the radius of the part of the cathode 11 that is the shortest distance from As a result, the high frequency electric field that excites the cathode 11 is significantly reduced.

〔発明の効果〕〔Effect of the invention〕

この発明によれば、ベイン30,40遊端の上
下端部と陰極11との距離を、内側ストラツプ1
5c,15bが接続された方に比べて外側ストラ
ツプ15a,15dが接続された方を短かくなる
ように設定しているので、ベイン端部で隣り合う
ベイン30,40間で異なる高周波電界の振幅を
それぞれのベインと陰極11との距離を調節する
ことにより実効的に打ち消し、陰極11への励振
を防いでいる。この結果、入力部20及びフイル
ターボツクス21内部の設計は、作用空間18内
から見た入力部側インピーダンスの調節という厳
しい規制を受けることなく行うことができ、マグ
ネトロンの性能の向上にも有効である。
According to this invention, the distance between the upper and lower ends of the free ends of the vanes 30, 40 and the cathode 11 is
Since the side where the outer straps 15a and 15d are connected is set to be shorter than the side where the outer straps 15a and 15d are connected, the amplitude of the high-frequency electric field differs between the adjacent vanes 30 and 40 at the end of the vane. By adjusting the distance between each vane and the cathode 11, it is effectively canceled out and the excitation to the cathode 11 is prevented. As a result, the internal design of the input section 20 and filter box 21 can be done without being subject to strict regulations such as adjusting the impedance on the input section side as seen from inside the working space 18, which is also effective in improving the performance of the magnetron. .

尚、上記実施例では、内側ストラツプ15c,
15bが固着されたベイン30,40端部を陰極
11より遠ざける形状にしたが、逆に第7図に示
すように、内側ストラツプ15bが固着されてい
ないベイン端部を陰極11に近づける形状、即ち
ベイン50遊端の上端を陰極11側へ突出させて
もよい。この場合、突出部51により陰極11と
の距離を調整する。
In the above embodiment, the inner strap 15c,
The end portions of the vanes 30 and 40 to which the inner strap 15b is fixed are moved away from the cathode 11, but as shown in FIG. The upper end of the free end of the vane 50 may be made to protrude toward the cathode 11 side. In this case, the distance to the cathode 11 is adjusted by the protrusion 51.

又、陰極11との距離を調整するためには、
種々の形状が可能であるが、第6図の切欠部3
1,41や第7図の突出部51のように、電磁界
が作用空間中央部へ向つて滑らかに変化するよう
なテーパー形状が望ましい。
In addition, in order to adjust the distance to the cathode 11,
Although various shapes are possible, the notch 3 in FIG.
It is desirable to have a tapered shape such that the electromagnetic field changes smoothly toward the center of the action space, such as the protrusion 51 in FIG.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は従来のマグネトロンを示す
横断面図と縦断面図、第3図は第2図の作用空間
附近を拡大して示す縦断面図、第4図は作用空間
内の高周波電界の分布を示す説明図、第5図はマ
グネトロンの外装を含む正面図、第6図はこの発
明の一実施例に係るマグネトロンの要部を示す縦
断面図、第7図はこの発明の他の実施を示す縦断
面図である。 11……陰極、13……陽極円筒、15a,1
5b,15c,15d……ストラツプ、30,4
0……ベイン、31,41……切欠部。
Figures 1 and 2 are a cross-sectional view and a vertical cross-sectional view showing a conventional magnetron, Figure 3 is an enlarged vertical cross-sectional view of the vicinity of the working space in Figure 2, and Figure 4 is a high-frequency diagram in the working space. An explanatory diagram showing the distribution of an electric field, FIG. 5 is a front view including the exterior of the magnetron, FIG. 6 is a longitudinal sectional view showing the main parts of a magnetron according to an embodiment of the present invention, and FIG. 7 is a diagram showing a magnetron other than the present invention. FIG. 11... Cathode, 13... Anode cylinder, 15a, 1
5b, 15c, 15d...Strap, 30, 4
0...Bane, 31, 41...Notch.

Claims (1)

【特許請求の範囲】 1 陽極円筒の軸心に沿つて螺旋状の直熱型にし
てその外径寸法が軸方向に亘つて一定である陰極
が配設され、上記陽極円筒の内側に複数のベイン
が放射状に配設され、これらベインの上端部及び
下端部にそれぞれ形成された溝に一対の内側スト
ラツプリング及び外側ストラツプリングがベイン
に1つおきに短絡接続され、且つ1つのベインに
おいて一方の溝では上記内側ストラツプリングが
短絡接続され、他方の溝では上記外側ストラツプ
リングが短絡接続され、その関係が上記複数のベ
インで交互に逆転してなるマグネトロンにおい
て、 上記ベインの上記陰極側遊端と上記陰極との距
離が、上記内側ストラツプリングが接続されてい
る端部側に比べて、上記外側ストラツプリングが
接続されている端部側が短く設定されてなること
を特徴とするマグネトロン。
[Scope of Claims] 1. A spiral directly heated cathode whose outer diameter is constant in the axial direction is disposed along the axis of the anode cylinder, and a plurality of cathodes are disposed inside the anode cylinder. The vanes are arranged radially, and a pair of inner strap rings and an outer strap ring are short-circuited to every other vane in grooves formed at the upper and lower ends of the vanes, In the magnetron, the inner strap ring is short-circuited in one groove, and the outer strap ring is short-circuited in the other groove, and the relationship is alternately reversed between the plurality of vanes, and the free end of the vane on the cathode side and The magnetron is characterized in that the distance from the cathode is set shorter on the end side to which the outer strap ring is connected than on the end side to which the inner strap ring is connected.
JP6356182A 1982-04-16 1982-04-16 MAGUNETORON Expired - Lifetime JPH0228220B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6356182A JPH0228220B2 (en) 1982-04-16 1982-04-16 MAGUNETORON

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6356182A JPH0228220B2 (en) 1982-04-16 1982-04-16 MAGUNETORON

Publications (2)

Publication Number Publication Date
JPS58181256A JPS58181256A (en) 1983-10-22
JPH0228220B2 true JPH0228220B2 (en) 1990-06-22

Family

ID=13232756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6356182A Expired - Lifetime JPH0228220B2 (en) 1982-04-16 1982-04-16 MAGUNETORON

Country Status (1)

Country Link
JP (1) JPH0228220B2 (en)

Also Published As

Publication number Publication date
JPS58181256A (en) 1983-10-22

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