JPH0228257B2 - - Google Patents
Info
- Publication number
- JPH0228257B2 JPH0228257B2 JP59122574A JP12257484A JPH0228257B2 JP H0228257 B2 JPH0228257 B2 JP H0228257B2 JP 59122574 A JP59122574 A JP 59122574A JP 12257484 A JP12257484 A JP 12257484A JP H0228257 B2 JPH0228257 B2 JP H0228257B2
- Authority
- JP
- Japan
- Prior art keywords
- polyimide resin
- semiconductor device
- resin
- film
- exposed surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
本発明は特性安定化のための接合の露出した表
面を保護樹脂としてポリイミド樹脂で被覆した半
導体装置の製造方法に関する。
The present invention relates to a method of manufacturing a semiconductor device in which the exposed surface of a bond is coated with a polyimide resin as a protective resin for stabilizing characteristics.
半導体装置の特性安定化のために接合の露出し
た表面をジヤンクシヨン・コーテイング・レジン
（JCR）と呼ばれる樹脂によつて被覆することは
周知である。このJCRの材料として縮合反応型の
ポリイミド樹脂がシリコーンゴムなどに比して耐
熱性が高く、また耐薬品性、機械特性および電気
特性がすぐれているので用いられるが、この樹脂
は一回の塗布で保護のための十分な膜厚を得よう
とすれば粘度を高くしなければならず、加熱処理
の際溶剤が抜け切らなくて空孔が生ずる。このよ
うな空孔を有する保護樹脂層は、例えば次の工程
で行われる封止樹脂によるモールド工程における
応力の影響を受けやすく、接合表面に達して初期
良品率と触頼性が著しく低下するという欠点があ
る。
It is well known that the exposed surface of a junction is coated with a resin called junction coating resin (JCR) in order to stabilize the characteristics of a semiconductor device. Condensation reaction type polyimide resin is used as the material for JCR because it has higher heat resistance than silicone rubber, and also has excellent chemical resistance, mechanical properties, and electrical properties. In order to obtain a sufficient film thickness for protection, the viscosity must be increased, and the solvent cannot escape during heat treatment, creating pores. A protective resin layer with such pores is susceptible to the effects of stress during the molding process using the sealing resin in the next process, for example, which reaches the bonding surface and significantly reduces the initial yield rate and palpability. There are drawbacks.
本発明は、上述の欠点を除去してポリイミド樹
脂からなるJCRの厚い膜を形成しても空孔による
信頼性の低下のない半導体装置の製造方法を提供
することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device that eliminates the above-mentioned drawbacks and does not reduce reliability due to holes even when a thick film of JCR made of polyimide resin is formed.
本発明によれば半導体装置の接合の露出した表
面を粘度の低い樹脂溶液を塗布して加熱処理し、
薄いポリイミド樹脂を形成したのち、その上に粘
度の高い樹脂溶液を塗布して加熱処理し、ポリイ
ミド樹脂膜を積層することにより上記の目的が達
せられる。
According to the present invention, a low viscosity resin solution is applied to the exposed surface of the bond of a semiconductor device and heat treated,
The above object can be achieved by forming a thin polyimide resin, applying a high viscosity resin solution thereon, heat-treating it, and laminating a polyimide resin film.
第１図は本発明の一実施例によるでき上がつた
半導体装置を示し、この装置は第２図、第３図の
工程を経て製造される。第２図においてメサ型半
導体チツプ１にリード線２がヘツダ部３において
接続されている。このチツプ１のPN接合の露出
した側面に第一樹脂層４が塗布される。樹脂層４
はポリアミツク酸を例えばジメチルフオルムアミ
ドで溶かして粘度の低い液をつくり、加熱してポ
リイミド樹脂にする。このポリイミド樹脂膜４は
薄いため空孔が発生することがない。しかしこの
樹脂層４のみでは十分な保護能力がないため第３
図に示すように第二樹脂層５を塗布する。第二樹
脂層は、例えばＮ−メチル・ピロリドンで溶かし
た粘度の高い液を塗布して保護のために十分の厚
さを有する膜とされる。つづいて再度の加熱処理
によりポリイミド樹脂膜５を形成する。さらに第
１図に示すように封止樹脂６をモールドするが、
厚い樹脂膜５に空孔が存在してもモールドにより
応力が加わつた際薄い樹脂膜４によりさえぎられ
て接合の露出した表面に達することはない。
FIG. 1 shows a completed semiconductor device according to an embodiment of the present invention, and this device is manufactured through the steps shown in FIGS. 2 and 3. In FIG. 2, lead wires 2 are connected to a mesa-type semiconductor chip 1 at a header portion 3. As shown in FIG. A first resin layer 4 is applied to the exposed side surface of the PN junction of the chip 1. Resin layer 4
For example, polyamic acid is dissolved in dimethyl formamide to create a low viscosity liquid, which is then heated to form polyimide resin. Since this polyimide resin film 4 is thin, no pores are generated. However, this resin layer 4 alone does not have sufficient protective ability, so the third layer
A second resin layer 5 is applied as shown in the figure. The second resin layer is made into a film having a sufficient thickness for protection by applying a highly viscous liquid dissolved in N-methyl pyrrolidone, for example. Subsequently, a polyimide resin film 5 is formed by heat treatment again. Furthermore, as shown in FIG. 1, the sealing resin 6 is molded.
Even if holes exist in the thick resin film 5, when stress is applied by the mold, they are blocked by the thin resin film 4 and do not reach the exposed surface of the bond.
本発明は半導体装置の接合露出表面にJCRとし
て耐熱性の高いポリイミド樹脂を形成する場合に
先ず薄いポリイミド膜を形成し、ついで十分な厚
さを有するポリイミド膜を積層するもので、モー
ルド時などに加わる応力により良品率の低下ある
いは信頼性の低下が著しく減少する。第４図はモ
ールド後のもれ電流試験における良品率、第５図
は信頼性試験としての温度85℃、湿度85％の雰囲
気中の1000時間の耐湿性試験における故障率を、
それぞれ従来の一層構造のポリイミド樹脂層を有
するダイオード、本発明の実施例の二層構造のポ
リイミド樹脂層を有するダイオードについて示
す。これにより良品率および信頼性に対する本発
明の効果は明らかである。
In the present invention, when forming a highly heat-resistant polyimide resin as JCR on the bonding exposed surface of a semiconductor device, a thin polyimide film is first formed, and then a sufficiently thick polyimide film is laminated. The reduction in yield rate or reliability due to the applied stress is significantly reduced. Figure 4 shows the non-defective rate in the leakage current test after molding, and Figure 5 shows the failure rate in the 1000-hour moisture resistance test in an atmosphere of 85°C and 85% humidity as a reliability test.
A conventional diode having a polyimide resin layer with a single layer structure and a diode having a polyimide resin layer with a two layer structure according to an embodiment of the present invention are shown, respectively. This clearly shows the effect of the present invention on the yield rate and reliability.
第１図は本発明の一実施例により製造された半
導体装置の断面図、第２図、第３図は第１図の半
導体装置の製造工程を順次示す断面図、第４図は
もれ電流試験の良品率を従来例と本発明の実施例
について示した線図、第５図は1000時間の耐湿試
験の故障率を従来例と本発明の実施例について示
した線図である。
１：半導体チツプ、４：薄いポリイミド樹脂
膜、５：厚いポリイミド樹脂膜。
FIG. 1 is a cross-sectional view of a semiconductor device manufactured according to an embodiment of the present invention, FIGS. 2 and 3 are cross-sectional views sequentially showing the manufacturing process of the semiconductor device of FIG. 1, and FIG. 4 is a leakage current. FIG. 5 is a diagram showing the failure rate of a 1000-hour humidity test for the conventional example and the example of the present invention. 1: semiconductor chip, 4: thin polyimide resin film, 5: thick polyimide resin film.
Claims (1)
される半導体装置の製造方法において、接合の露
出した表面を粘度の低い樹脂溶液を塗布して加熱
処理し、薄いポリイミド樹脂膜を形成したのち、
その上に粘度の高い樹脂溶液を塗布して加熱処理
し、厚いポリイミド樹脂膜を積層することを特徴
とする半導体装置の製造方法。1. In a method for manufacturing a semiconductor device in which the exposed surface of the bond is protected with polyimide resin, the exposed surface of the bond is coated with a low viscosity resin solution and heat treated to form a thin polyimide resin film, and then
A method for manufacturing a semiconductor device, which comprises applying a highly viscous resin solution thereon and heat-treating it to laminate a thick polyimide resin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59122574A JPS612349A (en) | 1984-06-14 | 1984-06-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59122574A JPS612349A (en) | 1984-06-14 | 1984-06-14 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS612349A JPS612349A (en) | 1986-01-08 |
| JPH0228257B2 true JPH0228257B2 (en) | 1990-06-22 |
Family
ID=14839269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59122574A Granted JPS612349A (en) | 1984-06-14 | 1984-06-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS612349A (en) |
-
1984
- 1984-06-14 JP JP59122574A patent/JPS612349A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS612349A (en) | 1986-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |